INFINEON IPD038N06N3G

Type
IPD038N06N3 G
OptiMOS®3 Power-Transistor
Product Summary
Features
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
V DS
60
V
R DS(on),max
3.8
mΩ
ID
90
A
• N-channel, normal level
previous engineering
sample code:
IPD04xN06N
• for sync. rectification, drives and dc/dc SMPS
• Avalanche rated
• Very low on-resistance R DS(on)
• Qualified according to JEDEC1) for target applications
• Pb-free plating; RoHS compliant
Type
IPD038N06N3 G
Package
PG-TO252-3
Marking
038N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
90
V GS=10 V, T C=100 °C
90
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
360
Avalanche current, single pulse 3)
I AS
T C=25 °C
90
Avalanche energy, single pulse
E AS
I D=90 A, R GS=25 Ω
165
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev.1.02
page 1
2010-08-12
IPD038N06N3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Value
T C=25 °C
IEC climatic category; DIN IEC 68-1
Parameter
Unit
188
W
-55 ... 175
°C
55/175/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.8
minimal footprint
-
-
75
6 cm² cooling area 4)
-
-
50
60
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=90 A
-
3.1
3.8
mΩ
Gate resistance
RG
-
1.3
-
Ω
Transconductance
g fs
60
120
-
S
|V DS|>2|I D|R DS(on)max,
I D=90 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.1.02
page 2
2010-08-12
IPD038N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
8000
-
-
1700
-
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
58
-
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
70
-
Turn-off delay time
t d(off)
-
40
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
42
-
Gate charge at threshold
Q g(th)
-
24
-
Gate to drain charge
Q gd
-
9
-
Switching charge
Q sw
-
27
-
Gate charge total
Qg
-
98
-
Gate plateau voltage
V plateau
-
5.3
-
Output charge
Q oss
-
77
-
-
-
90
-
-
360
-
0.95
1.2
V
-
125
-
ns
-
110
-
nC
V DD=30 V, V GS=10 V,
I D=90 A, R G=3.5 Ω
ns
Gate Charge Characteristics 5)
V DD=30 V, I D=90 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
Rev.1.02
T C=25 °C
V GS=0 V, I F=90 A,
T j=25 °C
V R=30 V, IF=50A,
di F/dt =100 A/µs
A
See figure 16 for gate charge parameter definition
page 3
2010-08-12
IPD038N06N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
100
200
180
80
160
140
60
I D [A]
P tot [W]
120
100
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
100
150
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
1
1 µs
limited by on-state
resistance
10 µs
10
200
T C [°C]
T C [°C]
0.5
2
100 µs
DC
Z thJC [K/W]
0.2
I D [A]
1 ms
101
10 ms
0.1
0.1
0.05
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev.1.02
0.01
page 4
2010-08-12
IPD038N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
12
10 V
6V
8V
7V
10
160
8
R DS(on) [mΩ]
120
I D [A]
5.5 V
80
5V
6
5.5 V
6V
4
7V
8V
5V
10 V
40
2
0
0
0
0
1
2
3
0
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
160
120
I D [A]
g fs [S]
120
80
175 °C
80
25 °C
40
40
0
0
0
2
4
6
8
Rev.1.02
0
20
40
60
I D [A]
V GS [V]
page 5
2010-08-12
IPD038N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=90 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
8
4
900 µA
90 µA
3
V GS(th) [V]
R DS(on) [mΩ]
6
max
4
typ
2
2
1
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
10000
Ciss
Coss
175°C 98%
25 °C
100
1000
I F [A]
C [pF]
103
102
175 °C
25°C 98%
10
100
Crss
101
1
10
0
20
40
60
Rev.1.02
0.0
0.5
1.0
1.5
2.0
V SD [V]
V DS [V]
page 6
2010-08-12
IPD038N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=90 A pulsed
parameter: T j(start)
parameter: V DD
100
12
25 °C
30 V
10
12 V
48 V
100 °C
8
V GS [V]
I AV [A]
150 °C
10
6
4
2
1
0
0.1
1
10
100
1000
0
20
t AV [µs]
40
60
80
100
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
V BR(DSS) [V]
65
60
V g s(th)
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev.1.02
page 7
2010-08-12
IPD038N06N3 G
PG-TO252-3 (D-Pak)
Rev.1.02
page 8
2010-08-12
IPD038N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.1.02
page 9
2010-08-12