A-POWER AP4435GM

AP4435GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Low On-resistance
D
D
BVDSS
-30V
RDS(ON)
20mΩ
ID
▼ Fast Switching Characteristic
SO-8
S
S
S
-9A
G
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
- 30
V
+ 20
V
Continuous Drain Current
3
-9
A
Continuous Drain Current
3
-7.3
A
-50
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
50
℃/W
1
200811216
AP4435GM
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-7A
-
-
20
mΩ
VGS=-4.5V, ID=-5A
-
-
32
mΩ
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=+20V
-
-
+100
nA
ID=-7A
-
18
29
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
6.6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
44
-
ns
tf
Fall Time
RD=15Ω
-
34
-
ns
Ciss
Input Capacitance
VGS=0V
-
1175 1690
pF
Coss
Output Capacitance
VDS=-25V
-
195
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
190
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-7A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4435GM
50
50
o
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
40
30
o
40
V G = -3.0V
20
10
30
V G = -3.0V
20
10
0
0
0
1
2
3
4
0
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
32
I D = -7A
V G = -10V
I D = -5A
T A =25 o C
1.4
Normalized RDS(ON)
28
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
T A =150 C
-ID , Drain Current (A)
T A =25 C
24
20
1.2
1.0
0.8
16
0.6
12
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
1.8
1.6
T j =25 o C
T j =150 o C
6
-VGS(th) (V)
-IS(A)
8
1.4
4
1.2
2
1
0
0.8
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4435GM
f=1.0MHz
10000
10
I D = -7A
V DS = -24V
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
C rss
2
100
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10.00
100us
1ms
1.00
10ms
100ms
1s
0.10
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100.00
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
0.01
Rthja = 125℃/W
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
T j =25 o C
V DS = -5V
T j =150 o C
VG
-ID , Drain Current (A)
30
QG
-4.5V
QGS
20
QGD
10
Charge
Q
0
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
Millimeters
8
7
6
5
E1
1
2
3
4
e
B
E
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E
5.80
6.15
6.50
E1
3.80
3.90
4.00
e
1.27 TYP
G
0.254 TYP
L
0.38
-
0.90
α
0.00
4.00
8.00
A
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4435GM
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5