SPD09P06PL G SIPMOS =Power-Transistor Product Summary Feature P-Channel •P-channel Enhancementmode mode •Enhancement •Logic LogicLevel Level prueb •175°C 175°C operating operating temperature temperature • Avalanche rated Avalanche rated • dv/dt rated dv/dt rated •Pb-free lead plating; RoHS compliant VDS -60 V RDS(on) 0.25 ID -9.7 A PG-TO252-3 Drain pin 2 Type Package Lead free SPD09P06PL G PG-TO252-3 Yes Gate pin1 Source pin 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC=25°C -9.7 TC=100°C -6.8 Pulsed drain current ID puls Unit -38.8 TC=25°C EAS 70 Avalanche energy, periodic limited by Tjmax EAR 4.2 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 42 W -55... +175 °C Avalanche energy, single pulse ID =-9.7 A , VDD =-25V, RGS =25 mJ kV/µs IS =-9.7A, VDS =-48, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg 55/175/56 IEC climatic category; DIN IEC 68-1 Rev 2.5 Page 1 2008-07-29 SPD09P06PL G Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =-250µA Gate threshold voltage, VGS = VDS ID =-250µA Zero gate voltage drain current µA IDSS VDS =-60V, VGS=0V, Tj =25°C - -0.1 -1 VDS =-60V, VGS=0V, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.3 0.4 RDS(on) - 0.2 0.25 Gate-source leakage current VGS =-20V, VDS =0V Drain-source on-state resistance VGS =-4.5V, ID =-5.4A Drain-source on-state resistance VGS =-10V, ID =-6.8A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.5 Page 2 2008-07-29 SPD09P06PL G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 1.8 3.5 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =-5.4 Input capacitance Ciss VGS =0V, VDS =-25V, - 360 450 Output capacitance Coss f=1MHz - 103 130 Reverse transfer capacitance Crss - 40 50 Turn-on delay time td(on) - 11 17 VDD =-30V, VGS =-4.5V, ns ID =-5.4, RG =6 Rise time tr VDD =-30V, VGS =-4.5V, - 168 252 Turn-off delay time td(off) ID =-5.4A, RG =6 - 49 74 Fall time tf - 89 134 - 1.3 2 - 5.1 7.5 - 14 21 V(plateau) VDD =-48V, ID =-9.7A - -4.1 - V IS - - -9.7 A - - -38.8 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-48V, ID =-9.7A VDD =-48V, ID =-9.7A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =-9.7A - -1.1 -1.4 V Reverse recovery time trr VR =-30V, IF=lS, - 52 76 ns Reverse recovery charge Qrr diF /dt=100A/µs - 64 96 nC Rev 2.5 Page 3 2008-07-29 SPD09P06PL G 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS 10 V 50 SPD09P06PL -11 W A -9 40 -8 35 -7 ID Ptot SPD09P06PL 30 -6 25 -5 20 -4 15 -3 10 -2 5 0 0 -1 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T -10 10 1 2 SPD09P06PL SPD09P06PL K/W tp = 11.0µs A -10 1 Z thJC 10 0 10 -1 = V DS /I D ID 100 µs on ) D = 0.50 10 R DS ( 1 ms -10 0 -2 0.20 0.10 10 ms DC 0.05 single pulse 0.02 10 -3 0.01 -10 -1 -1 -10 -10 0 -10 1 V -10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Rev 2.5 10 -4 -7 10 Page 4 2008-07-29 SPD09P06PL G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS A SPD09P06PL 0.8 Ptot = 42W VGS [V] a kj -20 -18 i ID -16 h -14 -12 g -10 f -8 -4 b -2.5 c -3.0 -4 -6 -8 a f g h i d -3.5 e -4.0 f -4.5 g -5.0 h -5.5 i -6.0 j -7.0 k -8.0 0.6 0.5 0.4 0.3 0.2 j k 0.1 VGS [V] = c d e f -3.0 -3.5 -4.0 -4.5 c -2 e d -2 d -2.0 e -6 0 0 SPD09P06PL c RDS(on) -24 b V 0 0 -12 -2 -4 -6 g h i j -5.0 -5.5 -6.0 -7.0 -8 k -8.0 -10 -12 -14 -16 A -20 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 25 4 S A g fs ID 3 15 2.5 2 10 1.5 1 5 0.5 0 0 1 Rev 2.5 2 3 4 5 6 0 0 8 V VGS Page 5 1 2 3 4 5 6 7 8 V ID 10 2008-07-29 SPD09P06PL G 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -6.8 A, VGS = -10 V parameter: VGS = VDS , ID = -250 µA 0.75 SPD09P06PL 2.4 V 98 % 2 V GS(th) RDS(on) 0.6 0.55 0.5 0.45 1.8 typ. 1.6 1.4 0.4 1.2 0.35 2% 1 98% 0.3 0.8 0.25 typ 0.2 0.6 0.15 0.4 0.1 0.2 0.05 0 -60 -20 20 60 100 °C 140 0 -60 200 -20 20 60 100 °C 180 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 2 A Ciss pF SPD09P06PL IF C -10 1 Coss 10 2 Crss -10 0 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 -5 -10 -15 -20 V -30 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD VDS Rev 2.5 -10 -1 0 Page 6 2008-07-29 SPD09P06PL G 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = -9.7 A , VDD = -25 V, RGS = 25 parameter: ID = -9.7 A pulsed 80 -16 mJ V -12 VGS 60 E AS SPD09P06PL 50 -10 40 -8 30 -6 20 -4 10 -2 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 0,2 VDS max 4 8 12 0,8 VDS max 16 20 nC 28 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -72 SPD09P06PL V (BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 140 °C 200 Tj Rev 2.5 Page 7 2008-07-29 SPD09P06PL G Package outline: PG-TO252-3 Rev 2.5 page 8 2008-07-29 SPD09P06PL G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.5 Page 8 2008-07-29