BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-01-20 RF & Protection Devices Edition 2009-01-20 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP720 BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Revision History: 2009-01-20, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Converted to the new IFX Template. Business Unit, Infineon Logo and the Trademarks were changed. 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Last Trademarks Update 2009-10-19 Data Sheet 3 Revision 1.0, 2009-01-20 BFP720 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 5.1 5.2 5.3 5.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 4 13 13 13 14 19 Revision 1.0, 2009-01-20 BFP720 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Data Sheet Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load RthJS = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP720 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC, VCE) f = 1 GHz, VCE Parameter in V . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms, IS21I² = f (f) VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Output Matching S22 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance Zopt for NFmin vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . Noise Figure NFmin = f (IC) VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (f) VCE = 3 V, ZS = Zop. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (IC) VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (VCE) IC = 13 mA, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . Package Outline SOT343 (top / side view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP720: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 12 12 14 19 19 20 20 21 21 22 22 23 25 25 25 25 Revision 1.0, 2009-01-20 BFP720 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Data Sheet Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings (TA = 25 °C unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision 1.0, 2009-01-20 SiGe:C Heterojunction Wideband RF Bipolar Transistor 1 BFP720 Features Main features: • • • • • • • • • • • • High performance general purpose wideband LNA transistor 150 GHz fT-Silicon Germanium Carbon technology 3 Enables Best-In-Class performance for wireless applications due to 2 4 high dynamic range 1 Transistor geometry optimized for low-current applications Operation voltage: 1.0 V to 4.0 V Very high gain at high frequencies and low current consumption 26 dB maximum stable gain at 1.9 GHz and only 13 mA 15 dB maximum available gain at 10 GHz and only 13 mA Ultra low noise figure from latest SiGe:C technology 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA Pb-free (RoHS compliant) package Application FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP720 Data Sheet SOT343 Pin Configuration 1=B 2=E 3=C 7 Marking 4=E R9s Revision 1.0, 2009-01-20 BFP720 Product Brief 2 Product Brief The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V. Table 1 Quick Reference DC Characteristics at TA = 25°C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Collector-emitter breakdown voltage V(BR)CEO 4 4.7 – V IC = 1 mA, IB = 0 mA Collector-base breakdown voltage V(BR)CBO 13 15 – V IE = 0 mA Collector current IC – – 25 mA Total power dissipation Ptot – – 100 mW DC current gain hFE 160 250 400 Data Sheet 8 TS ≤ 108 °C VCE = 3 V, IC = 13 mA Revision 1.0, 2009-01-20 BFP720 Product Brief Table 2 Quick Reference AC Characteristics at TA = 25°C Parameter Transition frequency Symbol fT Values Unit Note / Test Condition VCE = 3 V, IC = 13 mA Min. Typ. Max. – 45 – GHz – dB f = 2.4 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point – IC = 5 mA IC = 13 mA 22 25 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA – dB 20.5 23 – NFmin Gass 0.5 21.5 – 6 22 OP1dB OIP3 f = 5.5 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point – Gms Gma Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Data Sheet IC = 5 mA IC = 13 mA 19 19.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 15 16 – 0.7 15 – 8.5 23 OP1dB OIP3 9 Revision 1.0, 2009-01-20 BFP720 Maximum Ratings 3 Maximum Ratings Table 3 Maximum Ratings (TA = 25 °C unless otherwise specified) Parameter Symbol Collector-emitter voltage VCEO Values Min. Typ. Max. – – 4.0 TA = -55 °C Unit Note / Test Condition V – 3.5 Collector-emitter voltage VCES – – 13 V – Collector-base voltage VCBO – – 13 V – Emitter-base voltage VEBO – – 1.2 V – Collector current IC – – 25 mA – IB – – 2 mA – Ptot – – 100 mW – Operation junction temperature TJOp -55 – 150 °C – Storage temperature TStg -55 – 150 °C – Base current Total power dissipation 1) TS ≤ 108 °C 1) TS measured on the emitter lead at the soldering point of the pcb Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions. Data Sheet 10 Revision 1.0, 2009-01-20 BFP720 Thermal Characteristics 4 Thermal Characteristics Table 4 Thermal Resistance Parameter Symbol Value Unit 1) Junction - soldering point RthJS 420 1)For calculation of RthJA please refer to Application Note Thermal Resistance K/W 120 100 Ptot [mW] 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 1 Data Sheet Total Power Dissipation Ptot = f (Ts) 11 Revision 1.0, 2009-01-20 BFP720 Thermal Characteristics 10 D= 0 D= .005 D= .01 Ptot_max / Ptot_DC D= .02 D= .05 D= .1 D= .2 D=0 D= .5 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-07 1 1.E-06 D=0.5 tp [sec] Figure 2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) 1000 RthJS [K/W] D=0.5 D= .5 D= .2 D= .1 D= .05 D= .02 D= .01 D= .005 D=0 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 100 1.E-07 D= 0 tp [sec] Figure 3 Data Sheet Permissible Pulse Load RthJS = f (tp) 12 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5 DC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Collector-emitter breakdown voltage V(BR)CEO 4 4.7 – V IC = 1 mA, IB = 0 mA Collector-emitter cutoff current ICES – – 30 μA VCE = 13 V, VBE = 0 V Collector-base cutoff current ICBO – – 100 nA VCB = 5 V, IE = 0 mA Emitter-base cutoff current IEBO – – 2 μA VEB = 0.5 V, IC = 0 mA DC current gain hFE 160 250 400 IC = 13 mA, VCE = 3 V pulse measured 5.2 General AC Characteristics Table 6 AC Characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transition frequency fT – 45 – GHz IC = 13 mA, VCE = 3 V f = 1 GHz Collector-base capacitance Ccb – 0.06 – pF VCB = 3 V, VBE = 0 V f = 1 MHz emitter grounded Collector-emitter capacitance Cce – 0.35 – pF VCE = 3 V, VBE = 0 V f = 1 MHz base grounded Emitter-base capacitance Ceb – 0.35 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz collector grounded Data Sheet 13 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a testfixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C B E VB Bias-T (Pin 1) IN Figure 4 BFP720 Testing Circuit Table 7 AC Characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Data Sheet Typ. – Unit Max. – dB IC = 5 mA IC = 13 mA 34 37.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 23 29.5 – NFmin Gass 0.4 28.5 – OP1dB 6 22 OIP3 14 Note / Test Condition Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics Table 8 AC Characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 9 – Max. – dB IC = 5 mA IC = 13 mA 29 32.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition 23 28.5 – 0.4 28 – 5.5 21.5 OP1dB OIP3 Note / Test Condition AC Characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Data Sheet Typ. Unit Typ. Max. – – dB IC = 5 mA IC = 13 mA 26.5 29.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 22.5 27.5 – NFmin Gass 0.4 26 – 5.5 21 OP1dB OIP3 15 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics Table 10 AC Characteristics, VCE = 3 V, f = 1500 MHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 Table 11 – Max. – dB IC = 5 mA IC = 13 mA 24 27.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition 22 25.5 – 0.45 24 – Note / Test Condition 6 21.5 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Data Sheet Typ. Unit Typ. Max. – – dB IC = 5 mA IC = 13 mA 23 26 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 21.5 24.5 – NFmin Gass 0.45 23 – 7 22 OP1dB OIP3 16 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 Table 13 – Max. – dB IC = 5 mA IC = 13 mA 22 25 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition 20.5 23 – 0.5 21.5 – Note / Test Condition 6 22 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Typ. Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 dB IC = 5 mA IC = 13 mA 20.5 23.5 – NFmin Gass Max. – – Minimum Noise Figure Minimum Noise Figure Associated Gain Data Sheet Typ. Unit – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 18.5 20 – 0.55 19 – 7.5 22.5 17 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics Table 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gma Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 Table 15 Typ. – Unit Max. – dB IC = 5 mA IC = 13 mA 19 19.5 – – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Unit Note / Test Condition 15 16 – 0.7 15 – Note / Test Condition 8.5 23 AC Characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gma Gma Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 Typ. – – NFmin Gass Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 dB IC = 5 mA IC = 13 mA 13.5 15 – Minimum Noise Figure Minimum Noise Figure Associated Gain Max. – dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA – dB ZS = Zopt IC = 5 mA IC = 5 mA – dBm ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA 9 10 – 0.95 10.5 – 8 19.5 Notes 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results Data Sheet 18 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 5.4 Characteristic Curves 50 45 3V 40 2V 35 fT [GHz] 30 25 20 15 10 1V 5 0.5 V 0 1 10 100 Ic [mA] Figure 5 Transition Frequency fT = f (IC, VCE) f = 1 GHz, VCE Parameter in V 42 39 36 33 30 Gms G [dB] 27 24 21 G 18 ma |S |2 21 15 12 9 6 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 6 Data Sheet Power Gain Gma, Gms, IS21I² = f (f) VCE = 3 V, IC = 13 mA 19 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 0. 4 0 4. 5.0 S11 @3V, 5mA S11 @3V, 13mA 10.0 4.0 5.0 3.0 2.0 10.0 1.0 4 GHz 0.8 0.2 0 0 3. 5 GHz 0.6 0.2 5 GHz 9 GHz 6 GHz 0.4 6 GHz 10 GHz 8 GHz 7 GHz 8 GHz 2. 0 1.0 0.8 6 0. 10 GHz 9 GHz 7 GHz Swp Max 10GHz 3 GHz -10.0 4 GHz -4 .0 -5. 0 2 -0. 2 GHz 1 GHz 3 GHz .0 -2 -0 .6 1 GHz -1.0 -0.8 2 GHz Swp Min 0GHz Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA 1.0 0.8 2. 0 6 0. Swp Max 10GHz 0. 4 0 3. 0 4. 5.0 S22 @3V, 5mA 10 GHz 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 1 GHz 1 GHz 3 GHz .0 -2 -0.8 -0 .6 2 GHz -1.0 0 Data Sheet 2 GHz 4 GHz .4 -0 Figure 8 4 GHz 3 GHz -3 .0 0.2 5 GHz 8 GHz 7 GHz 6 GHz 5 GHz -10.0 0.2 8 GHz 7 GHz 6 GHz 2 10.0 9 GHz 9 GHz -0. S22 @3V, 13mA 4 .0 -5. 0 Figure 7 -3 .0 .4 -0 Swp Min 0GHz Output Matching S22 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA 20 Revision 1.0, 2009-01-20 BFP720 Swp Max 10GHz 2. 0 1.0 6 0. 0.8 Electrical Characteristics 0. 4 0 3. 0 4. 5.0 2.4GHz 10.0 2.0 0.8 1.0 0.6 0.2 0.4 -10.0 0 1.9GHz 0.45GHz 5.5GHz Δ: Ic = 13mA 2Δ: Ic = 13mA . 0 - : Ic = 5mA : Ic = 5mA -4 . -5. 0 0 10GHz .0 -2 -1.0 -0.8 -0 .6 -3 .0 .4 -0 Figure 9 10.0 1.9GHz 2.4GHz 3.0 4.0 5.0 0.2 5.5GHz Swp Min 0.45GHz Source Impedance Zopt for NFmin vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA 2 1.9 f = 10GHz 1.8 f = 5.5GHz 1.7 1.6 f = 2.4GHz 1.5 f = 1.9GHz 1.4 f = 0.45GHz 1.3 1.2 F [dB] 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 I [mA] c Figure 10 Data Sheet Noise Figure NFmin = f (IC) VCE = 3 V, ZS = Zopt 21 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 1.4 1.3 1.2 1.1 1 0.9 F [dB] 0.8 0.7 0.6 0.5 IC = 13mA 0.4 I = 5.0mA C 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 11 Noise Figure NFmin = f (f) VCE = 3 V, ZS = Zop 42 40 0.15GHz 38 36 0.45GHz 34 32 0.90GHz 30 1.50GHz 1.90GHz 2.40GHz G [dB] 28 26 3.50GHz 24 22 20 5.50GHz 18 16 10.00GHz 14 12 10 0 5 10 15 20 25 30 IC [mA] Figure 12 Data Sheet Power Gain Gma, Gms = f (IC) VCE = 3 V, f = Parameter in GHz 22 Revision 1.0, 2009-01-20 BFP720 Electrical Characteristics 40 38 0.15GHz 36 34 0.45GHz 32 30 0.90GHz 28 1.50GHz 1.90GHz 2.40GHz G [dB] 26 24 3.50GHz 22 20 5.50GHz 18 16 10.00GHz 14 12 10 8 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE [V] Figure 13 Power Gain Gma, Gms = f (VCE) IC = 13 mA, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 23 Revision 1.0, 2009-01-20 BFP720 Simulation Data 6 Simulation Data For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The BFP720 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. Data Sheet 24 Revision 1.0, 2009-01-20 BFP720 Package Information 7 Package Information 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 M 0.2 M A SOT343-PO V08 Figure 14 Package Outline SOT343 (top / side view) 1.6 0.8 0.6 1.15 0.9 SOT343-FP V08 Figure 15 Footprint Figure 16 Marking Example (Marking BFP720: R9s) 0.2 2.3 8 4 Pin 1 2.15 1.1 SOT323-TP V02 Figure 17 Data Sheet Tape Dimensions 25 Revision 1.0, 2009-01-20 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG