MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.7 dB Insertion Loss, ♦ 33 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state •+10mA for Isolation state ♦ M/A-COM’s unique AlGaAs hetero-junction anode technology. ♦ Silicon Nitride Passivation ♦ Polymer Scratch protection Yellow areas indicate bond pads DESCRIPTION M/A-COM’s MA4AGSW2 is an Aluminum-GalliumArsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented heterojunction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components. Absolute Maximum Ratings @ TAMB = +25°C Parameter Maximum Rating Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Incident C.W. RF Power +23dBm C.W. Breakdown Voltage 25V Bias Current ± 25mA Assembly Temperature +300°C < 10 sec Junction Temperature +175°C Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 Electrical Specifications @ TA = 25°C, +/-10mA bias current (On-wafer measurements) RF SPECIFICATIONS PARAMETER INSERTION LOSS ISOLATION INPUT RETURN LOSS OUTPUT RETURN LOSS FREQUENCY BAND MIN TYP MAX UNITS 0.05 - 18GHz --- 0.5 0.6 dB 18 - 50GHz --- 0.7 0.9 dB 0.05 - 18GHz 45 47 --- dB 18 - 50GHz 28 33 --- dB 0.05 - 18GHz --- 22 --- dB 18 - 50GHz --- 21 --- dB 0.05 - 18GHz --- 25 --- dB 18 - 50GHz --- 22 --- dB 10GHZ --- 20 --- nS * SWITCHING SPEED ( 10 % - 90 % RF VOLTAGE ) *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 Typical R.F. Performance (Probed on Wafer) @ +25°C IL ( dB ) TYPICAL INSERTION LOSS @ -10 mA 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.00 10.00 20.00 30.00 40.00 50.00 40.00 50.00 FREQUENCY ( GHz ) J2 J3 TYPICAL ISOLATION @ +10 mA 0 -10 ISOL ( dB ) -20 -30 -40 -50 -60 -70 -80 0.00 10.00 20.00 30.00 FREQUENCY ( GHz ) J2 J3 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 Typical RF Performance (Probed on wafer) @ +25°C TYPICAL OUTPUT RETURN LOSS @ -10 mA 0 ORL ( dB ) -5 -10 -15 -20 -25 -30 0.00 10.00 20.00 30.00 40.00 50.00 FREQUENCY ( GHz ) J2 J3 TYPICAL INPUT RETURN LOSS @ -10 mA 0 IRL ( dB ) -5 -10 -15 -20 -25 -30 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 45.00 50.00 FREQUENCY ( GHz ) J2 J3 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 Operation of the MA4AGSW2 Switch The simultaneous application of a negative DC current to the low loss port and positive DC current to the remaining isolated switching port is required for the operation of the MA4AGSW2, AlGaAs, PIN switch. The backside area of the die is the RF and DC return ground plane. The DC return is connected to the common port J1. The forward bias voltage at J2 & J3 will not exceed ±1.6 volts and is typically ± 1.4 volts with supply current of ± 30mA). In the low loss state, the series diode must be forward biased and the shunt diode reverse biased. While for the Isolated port, the shunt diode is forward biased and the series diode is reverse biased. The bias network design shown below should yield > 30 dB RF to DC Isolation. The lowest insertion loss, P1dB, IP3, and switching speed is achieved by using a voltage pull-up resistor in the DC return path, (J1). A minimum value of | -2V | is recommended at this return node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver. MA4AGSW2 Schematic with a Typical External 2-18 GHz Bias Network TYPICAL DRIVER CONNECTIONS CONTROL LEVEL (DC CURRENT) J2 J3 RF OUTPUT STATE J2-J1 J3-J1 -10mA +10mA Low Loss Isolation +10mA -10mA Isolation Low Loss 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 Chip Dimensions and bonding Pad Locations (In Yellow) G DIM A B C D E F G Thickness Pads X-Y Min. mils Typical Max. Min. mm Typical Max. 48 29.7 17.3 13.7 20.3 3.7 3.7 3.5 3.5 49 30.7 17.8 13.9 20.5 4.0 3.9 4.0 4.0 50 31.7 18.3 14.1 20.7 4.3 4.3 4.5 4.5 1.219 0.754 0.439 0.348 0.516 0.094 0.094 0.089 0.089 1.245 0.780 0.452 0.358 0.521 0.102 0.099 0.102 0.102 1.270 0.805 0.465 0.358 0.526 0.109 0.109 0.114 0.114 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4AGSW2 SPDT AlGaAs PIN Diode Switch RoHS Compliant Rev. V4 ASSEMBLY INSTRUCTIONS CLEANLINESS These chips should be handled in a clean environment. STATIC SENSITIVITY These Devices are considered ESD Class 1A, HBM. Proper ESD techniques should be used when handling these devices. GENERAL HANDLING The protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode’s anode. Die should primarily be handled with vacuum pickup tools, or alternatively with plastic tweezers. ASSEMBLY TECHNIQUES The MA4AGSW2, AlGaAs device is designed to be mounted with electrically conductive silver epoxy or with a low temperature solder perform, which does not have a rich tin content. SOLDER DIE ATTACH Only solders which do not scavenge gold, such as 80/20, Au/Sn or Indalloy #2 is recommended. Do not expose die to temperatures greater than 300°C for more than 10 seconds. ELECTRICAL CONDUCTIVE EPOXY DIE ATTACH Use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. Cure epoxy per manufacturer’s schedule. Typically 150°C for 1 hour. RIBBON/WIRE BONDING Thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. A 1/4 x 3 mil gold ribbon is recommended on all RF ports and should be kept as short as possible for the lowest inductance and best microwave performance. For more detailed handling and assembly instructions, see Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices” at www.macom.com. Ordering Information Part Number Package MA4AGSW2 Waffle Pack MASW-000552-13210G Gel Pack 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.