NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCP 28/48 (PNP) ● Type Marking Ordering Code (tape and reel) BCP 29 BCP 49 BCP 29 BCP 49 Q62702-C2136 Q62702-C2137 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol Values BCP 49 BCP 29 Unit Collector-emitter voltage VCE0 30 60 V Collector-base voltage VCB0 40 80 Emitter-base voltage VEB0 10 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 ˚C2) Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 75 Junction - soldering point Rth JS ≤ 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCP 29 BCP 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 29 BCP 49 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA, IB = 0 V(BR)CB0 BCP 29 BCP 49 Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EB0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C VCB = 60 V, IE = 0, TA = 150 ˚C ICB0 BCP 29 BCP 49 BCP 29 BCP 49 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V IEB0 V 30 60 – – – – 40 80 – – – – 10 – – – – – – – – – – 100 100 10 10 nA nA µA µA – – 100 nA 4000 2000 10000 4000 20000 10000 4000 2000 – – – – – – – – – – – – – – – – – hFE BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 Collector-emitter saturation voltage IC = 100 mA, IB = 0.1 mA VCEsat – – 1.0 Base-emitter saturation voltage IC = 100 mA, IB = 0.1 mA VBEsat – – 1.5 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 V BCP 29 BCP 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT – 200 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 6.5 – pF Semiconductor Group 3 BCP 29 BCP 49 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) VCB = VCE max Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 4 BCP 29 BCP 49 DC current gain hFE = f (IC) VCE = 10 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Semiconductor Group 5