Silicon PIN Diode BXY 42BA-3 ● Fast switching ● In stripline package other lead configurations available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package1) BXY 42BA-3 – Q62702-X143 Cathode: black dot, heat sink T1 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak forward current, tp =1 µs IFRM 5 A Total power dissipation Ptot 350 mW Junction temperature Tj 175 ˚C Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 450 K/W BXY 42BA-3 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Breakdown voltage IR = 10 µA V(BR) 50 – – V Reverse current VR = 40 V IR – – 5 nA Storage time IF = 10 mA, VR = 10 V ts – 4 – ns Diode capacitance VR = 20 V, f = 1 MHz CT – – 0.24 pF Charge carrier life time IF = 10 mA, IR = 6 mA τL – 40 – ns Forward resistance f = 100 MHz, IF = 10 mA rf – 1.5 – Ω Semiconductor Group 2