BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 181W SOT-323 RFs Q62702-F1491 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 Base current IB 2 Total power dissipation Ptot TS ≤ 90 °C Values Unit V mA mW 175 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 345 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 5 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-11-1996 BFR 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.32 0.5 - 0.22 - - 0.3 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.45 - f = 1.8 GHz - 1.8 - - 18.5 - - 13 - f = 900 MHz - 15 - f = 1.8 GHz - 9.5 - Power gain 1) Gms IC = 5 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma IC = 5 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 5 mA, VCE = 8 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 181W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA BF = 96.461 - NF = 0.90617 - VAF = 22.403 V IKF = 0.12146 A ISE = 12.603 fA NE = 1.7631 - BR = 16.504 - NR = 0.87757 - VAR = 5.1127 V IKR = 0.24951 A ISC = 0.01195 fA NC = 1.6528 - RB = 9.9037 Ω IRB = 0.69278 mA RBM = 6.6315 Ω RE = 2.1372 Ω RC = 2.2171 Ω CJE = 1.8168 fF VJE = 0.73155 V MJE = 0.43619 - TF = 17.028 ps XTF = 0.33814 - VTF = 0.12571 V ITF = 1.0549 mA PTF = 0 deg CJC = 319.69 fF VJC = 1.1633 V MJC = 0.30013 - XCJC = 0.082903 - TR = 2.7449 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99768 - TNOM 300 K LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LCO = Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 181W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 200 mW Ptot 160 TS 140 120 100 80 TA 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFR 181W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.5 10 GHz Ccb pF fT 10V 8V 8 7 0.3 5V 6 0.2 5 3V 4 2V 3 1V 0.1 2 1 0.0 0 0 4 8 12 16 V VR 22 0 2 4 6 8 10 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 12 14 mA fT 18 14 dB 10V dB 5V 12 10V 5V 18 11 3V G G 17 3V 10 16 2V 9 2V 15 8 14 7 13 6 1V 5 12 4 1V 11 3 10 2 9 1 0 8 0 2 4 Semiconductor Group 6 8 10 12 14 mA IC 18 0 6 2 4 6 8 10 12 14 mA IC 18 Dec-11-1996 BFR 181W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 20 I =5mA C 22 0.9GHz dB 8V dBm 18 G 16 IP3 0.9GHz 14 5V 16 3V 14 1.8GHz 12 12 2V 10 10 1.8GHz 8 8 6 6 4 1V 2 4 0 2 -2 -4 1 0 0 2 4 6 8 V 12 3 5 7 9 11 13 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter mA IC 17 25 30 IC=5mA IC=5mA dB G S21 dB 20 15 15 10 10 10V 1V 10V 5 1V 5 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996