BAR66 Silicon PIN Diode Array l l l Surge protection device Two PIN diodes, series configuration Designed for surge overvoltage clamping in antiparallel connection Type Marking BAR66 PMs Ordering Code (taped) Pin Configuration 1 2 A1 C2 Q62702-A1473 Package 3 C1/A2 1) SOT-23 Maximum Ratings Parameter Symbol Reverse voltage VR IF IF Ptot Top Tstg Forward current Forward current (tp = 1µS) Power dissipation TS ≤ 25°C 1) Operating temperature range Storage temperature range BAR66 Unit 150 V 200 mA 20 A 250 mW -55...+150 °C -55...+150 °C Thermal Resistance Junction-ambient 1) Rth JA ≤ 450 K/W ____________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 05.05.94 BAR66 Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 150 - - - 0.95 1.2 VR Reverse current IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 35 V,f=1M Hz VR = 0 V ,f=100 MHz Forward resistance V VF V CT pF - 0.4 0.35 0.6 Ω rf IF = 10 mA, f = 100 MHz - 1.5 - τL Charge carrier lifetime IF=10 mA,IR = 6 mA,IR = 3 mA Series inductance LS µs - 0.7 2 - nH Dioden capacitance CT = f (VR*) f = 1 MHz Semiconductor Group 2 Edition A01, 05.05.94