Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1) BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings Parameter Symbol Values Unit BXY 43A BXY 43B BXY 43C Breakdown voltage V(BR) 150 150 150 V Forward current IF 400 500 500 mA Peak forward current, tp =1 µs IFRM 10 20 20 A Total power dissipation Ptot 500 600 600 mW Junction temperature Tj 175 Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 Rth JC 80 ˚C Thermal Resistance Junction - case 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 70 70 K/W BXY 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 100 V IR – 5 – nA Forward voltage IF = 100 mA VF – 1 – V AC Characteristics Diode capacitance VR = 50 V, f = 1 MHz – – – BXY 43A BXY 43B BXY 43C Forward resistance IF = 10 mA, f = 100 MHz 0.19 0.25 0.35 0.20 0.28 0.40 Ω rf – – – BXY 43A BXY 43B BXY 43C 1.2 1.0 1.0 – – – τL Charge carrier life time IF = 10 mA, IR = 6 mA BXY 43A BXY 43B BXY 43C ns – – – 250 350 350 – – – – – – 15 20 25 – – – – 0.3 – ts Storage time IF = 10 mA, VR = 10 V BXY 43A BXY 43B BXY 43C Case series inductance Ls Preaging at forward current for 168 hours IL BXY 43A BXY 43B BXY 43C Gross and fine leakage test Semiconductor Group pF CT – 2 nH A – – – 0.2 0.2 0.5 – – – – 10–8 – torr.1 –s