Laser Diode in TO-220 Package 1.0 W cw (Class 4 Laser Product) SPL 2Yxx (SFH 4874x1) Features • Efficient radiation source for pulsed and cw-operation • Reliable InGa(Al)As strained layer quantum-well material • Small TO-220 package with efficient thermal coupling • Includes thermistor to control temperature/wavelength • Single emitting area 200 µm × 1 µm • Cylindrical correction for a near circular farfield pattern Applications • Pumping solid state lasers (Nd: YAG, Yb: YAG, …) • Medical applications • Laser soldering • Energy transmission • Testing and measuring applications Type Old Type (as of Oct. 1996) Wavelength SPL 2Y81 SPL 2Y85 SPL 2Y94 SPL 2Y98 SFH 487401 SFH 487421 SFH 487441 – 808 nm 850 nm 940 nm 980 nm *) Ordering Code Q62702-P367 Q62702-P1677 Q62702-P1630 on request *) Other wavelengths in the range of 780 nm ... 980 nm are available on request. Maximum Ratings (TA = 25 °C) Parameter Symbol Values Unit min. typ. max. Output power (continuous wave) 1) Popt – – 1.1 W Output power (quasi-continuous wave) 1) (tp ≤ 150 µs, duty cycle ≤ 1%) Pqcw – – 1.5 W Reverse voltage VR – – 3 V Operating temperature Top – 10 … + 60 °C Storage temperature Tstg – 40 … + 85 °C Maximum soldering temperature, max. 5 s Ts – – 250 °C 1) Optical power measurements refer to a detector with NA = 0.6 Semiconductor Group 1 02.97 SPL 2Yxx (SFH 4874x1) Diode Characteristics (TA = 25 °C) Symbol Parameter Values Unit min. typ. max. 803 840 935 808 850 940 813 860 945 Emission wavelength 1) λpeak Spectral width (FWHM) 1) ∆λ 2 nm Output power 2) Popt 1.0 W nm Differential efficiency 2) 808 nm 850 nm 940 nm η 0.75 0.75 0.70 0.95 0.85 0.80 1.1 1.0 0.9 W/A Threshold current 808 nm 850 nm 940 nm Ith 0.40 0.30 0.30 0.45 0.40 0.35 0.55 0.50 0.40 A Operating current 1) 808 nm 850 nm 940 nm Iop 1.3 1.3 1.4 1.5 1.5 1.6 1.8 1.8 1.8 A Operating voltage 1) Vop Differential series resistance rs Characteristic temperature (threshold) 3) T0 150 K Temperature coefficient of operating current ∂Iop/ ∂T 0.5 %/K Temperature coefficient of wavelength 4) ∂λ / ∂T Thermal resistance (junction → heat sink) Rth JA 2.0 – 0.25 0.2 0.27 10 V 0.4 0.30 Ω nm/K K/W 1) Standard operating conditions refer to 1 W cw measured with NA = 0.6 2) Optical power measurements refer to a detector with NA = 0.6 3) Model for the thermal behavior of threshold current: Ith(T2) = Ith(T1) × exp(T2 – T1)/T0 4) Depending on emission wavelength NTC Thermistor Parameter Symbol Typ. Values Resistance at room temperature (25 °C) RNTC Semiconductor Group 2 10 Unit kΩ SPL 2Yxx (SFH 4874x1) Optical Characteristics (TA = 25 °C) Radiant Power Popt vs IF Mode Spectrum Irel vs λ (Popt = 1.0 W) Farfield Distribution Parallel to Junction Irel vs θ|| Farfield Distribution Perpendicular to Junction Irel vs θ⊥ Semiconductor Group 3 SPL 2Yxx (SFH 4874x1) Notes for Operation 1. Eye Protection This laser is a Class 4 Laser product. Refer to the relevant safety regulations for protection during handling and operation. 2. Overload Protection The specified values are valid as long as the diode has not been not overloaded. Voltage spikes from the power supply unit, even when applied for nanoseconds only, may cause irreversible damage to the laser diode. Such spikes may occur when the power supply is turned on or off, or they may reach the laser diode from the line via the coupling capacitance of electronically controlled devices. The power supply should therefore be provided with appropriate protection circuits. Handling Notes 1. Package To avoid electrostatic damage it is recommended to observe the same rules as for handling MOS-devices. 2. Mechanical Attachment 2.1 Mounting hole (suitable for M 2.5) Because of the good thermal conductivity of the TO 220 base plate (copper) the heat loss is properly dissipated even if the component is attached on one side only. Some mounting techniques are shown below (Fig. 1 – 3). 2.2 For exact positioning of the TO component and other parts, e.g. lenses, the TO 220 package can be attached with appropriate clamping devices or screws (max. M 2.5). 3. Soldering When soldering the TO base to a heat sink, do not exceed the following limits: • max. soldering temperature: 125 °C • max. soldering time: 1 min. Semiconductor Group 4 SPL 2Yxx (SFH 4874x1) Mounting Techniques Figure 2 Figure 1 Figure 3 Semiconductor Group 5 SPL 2Yxx (SFH 4874x1) Package Outlines (Dimensions in mm, unless specified). Semiconductor Group 6