BSP 125 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.5 ...2.5 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 Ω SOT-223 BSP 125 Type BSP 125 BSP 125 Ordering Code Q62702-S654 Q67000-S284 D Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values 600 V 600 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 39 °C A 0.12 IDpuls DC drain current, pulsed TA = 25 °C 0.48 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1.7 1 Sep-12-1996 BSP 125 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 72 Therminal resistance, junction-soldering point 1) RthJS ≤ 12 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V 600 - - 1.5 2 2.5 VDS = 600 V, VGS = 0 V, Tj = 25 °C - 10 100 nA VDS = 600 V, VGS = 0 V, Tj = 125 °C - 8 50 µA Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 0.12 A Semiconductor Group nA - 2 30 45 Sep-12-1996 BSP 125 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance 0.06 pF - 95 130 - 9 14 - 4 6 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.18 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Rise time - 5 8 - 10 15 - 16 21 - 15 20 tr VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 125 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - - 0.48 V 0.9 1.3 trr ns - 300 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 0.12 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 0.24 A, Tj = 25 °C Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A µC - 4 0.82 - Sep-12-1996 BSP 125 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.13 A W 0.11 Ptot 1.6 ID 0.10 1.4 0.09 1.2 0.08 0.07 1.0 0.06 0.8 0.05 0.6 0.04 0.03 0.4 0.02 0.2 0.01 0.0 0.00 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 125 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.28 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 140 Ptot = 2W k lj i hg f A Ω e 0.24 ID a b d 120 VGS [V] RDS (on) 110 a 2.5 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 7.0 0.10 j 8.0 50 0.08 k 9.0 40 l 10.0 0.22 0.20 0.18 c 0.16 0.14 0.12 b 100 90 80 70 60 0.06 c d e g fh k ji 30 0.04 20 V [V] = GS a 0.02 0.00 0 4 8 12 16 10 0 V 24 a 2.5 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 VDS A 0.18 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 0.25 0.22 A ID 0.18 gfs S 0.16 0.14 0.15 0.12 0.10 0.10 0.08 0.06 0.05 0.04 0.02 0.00 0 0.00 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 A 0.20 ID 6 Sep-12-1996 BSP 125 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.12 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 110 4.6 Ω V 4.0 RDS (on) 90 VGS(th) 3.6 80 3.2 70 2.8 60 98% 98% 2.4 typ 50 2.0 40 typ 2% 1.6 30 1.2 20 0.8 10 0.4 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 10 0 pF A C IF 10 2 10 -1 Ciss 10 1 10 -2 Coss Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 125 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) parameter : D = 0.01, TC=25°C 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 125 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996