DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage APPLICATIONS 2 handbook, halfpage • Converters • Inverters 1 • Switching regulators • Motor control systems. MBB008 3 MBK106 PINNING 1 2 3 PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage MAX. UNIT VBE = 0 BUT11 850 V BUT11A 1000 V BUT11 400 V BUT11A 450 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage see Figs 7 and 9 1.5 V IC collector current (DC) see Figs 2 and 4 5 A ICM collector current (peak value) see Fig. 4 10 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.3 100 W tf fall time resistive load; see Figs 11 and 12 0.8 µs THERMAL CHARACTERISTICS SYMBOL Rth j-mb 1997 Aug 13 PARAMETER thermal resistance from junction to mounting base 1 VALUE UNIT 1.25 K/W Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER CONDITIONS collector-emitter peak voltage VCEO MIN. MAX. UNIT VBE = 0 BUT11 − 850 V BUT11A − 1000 V BUT11 − 400 V BUT11A − 450 V − 5 A collector-emitter voltage open base IC collector current (DC) see Figs 2 and 4 ICM collector current (peak value) tp < 2 ms; see Fig. 4 IB base current (DC) IBM base current (peak value) − 10 A − 2 A tp < 2 ms − 4 A Tmb ≤ 25 °C; see Fig.3 Ptot total power dissipation − 100 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C MGB895 5 MGD283 120 handbook, halfpage handbook, halfpage IC (A) Ptot max (%) 4 80 3 2 40 1 (1) (2) 0 0 400 0 1200 800 V CE (V) 0 50 100 Tmb (oC) (1) BUT11. (2) BUT11A. Fig.2 Reverse bias SOAR. 1997 Aug 13 Fig.3 Power derating curve. 2 150 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 5 and 6 BUT11 BUT11A VCEsat VBEsat ICES MIN. TYP. MAX. UNIT 400 − − V 450 − − V collector-emitter saturation voltage BUT11 IC = 3 A; IB = 600 mA; see Figs 7 and 9 − − 1.5 V BUT11A IC = 2.5 A; IB = 500 mA; see Figs 7 and 9 − − 1.5 V base-emitter saturation voltage BUT11 IC = 3 A; IB = 0.6 A; see Fig.7 − − 1.3 V BUT11A IC = 2.5 A; IB = 0.5 A; see Fig.7 − − 1.3 V VCE = VCESMmax; VBE = 0; note 1 − − 1 mA VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − 2 mA mA collector-emitter cut-off current IEBO emitter-base cut-off current VEB = 9 V; IC = 0 − − 10 hFE DC current gain VCE = 5 V; IC = 5 mA; see Fig.10 10 18 35 VCE = 5 V; IC = 500 mA; see Fig.10 10 20 35 BUT11 ICon = 3 A; IBon = −IBoff = 600 mA − − 1 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA − − 1 µs BUT11 ICon = 3 A; IBon = −IBoff = 600 mA − − 4 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA − − 4 µs BUT11 ICon = 3 A; IBon = −IBoff = 600 mA − − 0.8 µs BUT11A ICon = 2.5 A; IBon = −IBoff = 500 mA − − 0.8 µs Switching times resistive load (see Fig.12) ton ts tf turn-on time storage time fall time Switching times inductive load (see Fig.14) ts storage time BUT11 BUT11A tf ICon = 3 A; IBon = 600 mA − 1.1 1.4 µs ICon = 3 A; IBon = 600 mA; Tj = 100 °C − 1.2 1.5 µs ICon = 2.5 A; IBon = 500 mA − 1.1 1.4 µs ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C − 1.2 1.5 µs − 80 150 ns fall time BUT11 ICon = 3 A; IBon = 600 mA ICon = 3 A; IBon = 600 mA; Tj = 100 °C − 140 300 ns BUT11A ICon = 2.5 A; IBon = 500 mA − 80 150 ns 140 300 ns ICon = 2.5 A; IBon = 500 mA; Tj = 100 °C − Note 1. Measured with a half-sinewave voltage (curve tracer). 1997 Aug 13 3 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUT11; BUT11A MGB950 102 IC (A) δ = 0.01 ICM max 10 IC max II tp = 20 µs (1) 50 µs 1 100 µs 200 µs I 500 µs (2) 10−1 1 ms 2 ms 10 ms DC 10−2 III BUT11 BUT11A IV 10−3 10 102 103 VCE (V) 104 Tmb ≤ 25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 5 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. Fig.4 Forward bias SOAR. 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors handbook, halfpage BUT11; BUT11A MGE239 handbook,IC halfpage + 50 V (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 300 Ω 1Ω 0 30 to 60 Hz Fig.5 VCE (V) min VCEOsust MGE252 Test circuit for collector-emitter sustaining voltage. Fig.6 Oscilloscope display for collector-emitter sustaining voltage. MGB913 2.0 handbook, full pagewidth VBEsat VCEsat (V) 1.5 1.0 (1) (2) 0.5 (3) (4) 0 10−2 IC/IB = 5. 10−1 (1) VBE; Tj = 25 °C. (2) VBE; Tj = 100 °C. 1 IC (A) 10 (3) VCE; Tj = 100 °C. (4) VCE; Tj = 25 °C. Fig.7 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values. 1997 Aug 13 5 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A MGB910 1.6 handbook, full pagewidth VBE (V) 1.4 (1) (2) 1.2 (3) 1.0 0.8 0.25 0 Tj = 25 °C. (1) IC = 5 A. 0.5 1.25 1.0 0.75 1.5 IB (A) (2) IC = 3 A. (3) IC = 1.5 A. Fig.8 Base-emitter voltage as a function of base current. MGB873 10 (1) (2) MBC095 2 10halfpage handbook, handbook, halfpage (3) VCEsat hFE (V) VCE = 5 V 1V 1 10 10−1 10−2 10−1 1 IB (A) 1 10−2 10 10−1 1 102 10 IC (A) (1) IC = 1.5 A. (2) IC = 3 A. (3) IC = 5 A. Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.9 Collector-emitter saturation voltage as a function of base current. 1997 Aug 13 Fig.10 DC current gain; typical values. 6 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB VCC handbook, halfpage 10% t RL VIM IB off RB 0 D.U.T. IC on 90% tp MGE244 T IC 10% ton VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01. The values of RB and RL are selected in accordance with ICon and IBon requirements. tf t ts Fig.12 Switching time waveforms with resistive load. Fig.11 Test circuit resistive load. handbook, halfpage tr IB on 90% IB 10% handbook, halfpage t VCC −IB off LC +IB IC on 90% LB D.U.T. VEB IC MBH383 10% ts toff t tf MGE238 VCC = 300 V; VEB = 5 V; LB = 1 µH. Fig.14 Switching time waveforms with inductive load. Fig.13 Test circuit inductive load. 1997 Aug 13 7 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 1997 Aug 13 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220 8 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Aug 13 9 Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A NOTES 1997 Aug 13 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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