BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA BC807 SOT23 - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base; IC = 10 mA - - −45 V IC collector current (DC) - - −500 mA ICM peak collector current - - −1 BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 hFE [1] DC current gain Pulse test: tp ≤ 300 μs; δ ≤ 0.02. IC = −100 mA; VCE = −1 V [1] A BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol SOT23 1 base 2 emitter 3 collector 3 3 1 1 2 2 sym013 SOT323 1 base 2 emitter 3 collector 3 3 1 2 sym013 1 2 sot323_so SOT54 1 emitter 2 base 3 collector 3 1 2 3 2 1 001aab347 006aaa149 SOT54A 1 emitter 2 base 3 collector 3 1 2 2 3 1 001aab348 006aaa149 SOT54 variant 1 emitter 2 base 3 collector 3 1 2 3 001aab447 2 1 006aaa149 BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 2 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BC807 - plastic surface mounted package; 3 leads SOT23 BC807W SC-70 plastic surface mounted package; 3 leads SOT323 BC327[2] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code[1] BC807 5D* BC807-16 5A* BC807-25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 C32725 BC327-40 C32740 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 3 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base; IC = 10 mA - −45 V VEBO emitter-base voltage open collector - −5 V IC collector current (DC) - −500 mA ICM peak collector current - −1 A IBM peak base current - −200 mA Ptot total power dissipation BC807 Tamb ≤ 25 °C [1][2] - 250 mW BC807W Tamb ≤ 25 °C [1][2] - 200 mW BC327 Tamb ≤ 25 °C [1][2] - 625 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Conditions Typ Max Unit BC807 Tamb ≤ 25 °C [1][2] - - 500 K/W BC807W Tamb ≤ 25 °C [1][2] - - 625 K/W BC327 Tamb ≤ 25 °C [1][2] - - 200 K/W [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. [2] Valid for all available selection groups. BC807_BC807W_BC327_6 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 4 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current IEBO hFE Conditions Min Typ Max Unit IE = 0 A; VCB = −20 V - - −100 nA IE = 0 A; VCB = −20 V; Tj = 150 °C - - −5 μA - - −100 nA BC807; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 emitter-base cut-off current IC = 0 A; VEB = −5 V DC current gain IC = −100 mA; VCE = −1 V [1] hFE DC current gain IC = −500 mA; VCE = −1 V [1] 40 - - VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA [1] - - −700 mV VBE base-emitter voltage IC = −500 mA; VCE = −1 V [2] - - −1.2 V Cc collector capacitance IE = ie = 0 A; VCB = −10 V; f = 1 MHz - 5 - pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 80 - - MHz [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] VBE decreases by approximately 2 mV/K with increasing temperature. BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 5 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 006aaa119 300 006aaa120 600 (1) hFE hFE (1) 200 400 (2) (2) 100 200 (3) (3) 0 −10−1 −1 −10 −102 I C (mA) 0 −10−1 −103 VCE = −1 V −1 −102 I C (mA) −103 VCE = −1 V (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 1. −10 Selection -16: DC current gain as a function of collector current; typical values Fig 2. Selection -25: DC current gain as a function of collector current; typical values 006aaa121 800 hFE 600 (1) 400 (2) 200 0 −10−1 (3) −1 −10 −102 I C (mA) −103 VCE = −1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Selection -40: DC current gain as a function of collector current; typical values BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 6 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 006aaa122 −10 006aaa123 −10 VBEsat (V) VBEsat (V) −1 −1 (1) −10−1 −10−1 (1) (2) (2) (3) (3) −1 −10 −102 I C (mA) −10−1 −10−1 −103 −1 IC/IB = 10 IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 4. Selection -16: Base-emitter saturation voltage as a function of collector current; typical values Fig 5. −10 −102 I C (mA) −103 Selection -25: Base-emitter saturation voltage as a function of collector current; typical values 006aaa124 −10 VBEsat (V) −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 7 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 006aaa125 −1 006aaa126 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) −10−2 (3) (1) (3) −10−2 −10−1 −1 −10 (2) −102 I C (mA) −10−3 −10−1 −103 IC/IB = 10 −1 −102 I C (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 7. −10 Selection -16: Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Selection- 25: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa127 −1 VCEsat (V) −10−1 (1) (3) −10−2 −10−3 −10−1 −1 −10 (2) −102 I C (mA) −103 IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 8 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 006aaa128 −1.2 006aaa129 −1.2 (3) (3) IC (A) (2) (1) (4) −0.8 (5) IC (A) (2) (1) (4) (5) −0.8 (6) (6) (7) (7) (8) (8) (9) −0.4 (9) −0.4 (10) (10) 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C 0 0 −1 −3 −4 −5 VCE (V) Tamb = 25 °C (1) IB = −16.0 mA (1) IB = −13.0 mA (2) IB = −14.4 mA (2) IB = −11.7 mA (3) IB = −12.8 mA (3) IB = −10.4 mA (4) IB = −11.2 mA (4) IB = −9.1 mA (5) IB = −9.6 mA (5) IB = −7.8 mA (6) IB = −8.0 mA (6) IB = −6.5 mA (7) IB = −6.4 mA (7) IB = −5.2 mA (8) IB = −4.8 mA (8) IB = −3.9 mA (9) IB = −3.2 mA (9) IB = −2.6 mA (10) IB = −1.6 mA (10) IB = −1.3 mA Fig 10. Selection -16: Collector current as a function of collector-emitter voltage; typical values Fig 11. Selection -25: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC327_6 Product data sheet −2 © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 9 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 006aaa130 −1.2 (5) IC (A) (4) (3) (2) −0.8 (1) (6) (7) (8) (9) −0.4 (10) 0 0 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) IB = −12.0 mA (2) IB = −10.8 mA (3) IB = −9.6 mA (4) IB = −8.4 mA (5) IB = −7.2 mA (6) IB = −6.0 mA (7) IB = −4.8 mA (8) IB = −3.6 mA (9) IB = −2.4 mA (10) IB = −1.2 mA Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 10 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 13. Package outline SOT23 (TO-236AB) BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 11 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 14. Package outline SOT323 (SC-70) BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 12 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 15. Package outline SOT54 (SC-43A/TO-92) BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 13 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A c E A L d L2 b 1 e1 e D 2 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 5.08 2.54 14.5 12.7 3 max. L2 3 2 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 97-05-13 04-06-28 SOT54A Fig 16. Package outline SOT54A BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 14 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c e1 L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-06-28 05-01-10 SOT54 variant Fig 17. Package outline SOT54 variant BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 15 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 BC807 SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 BC807W SOT323 4 mm pitch, 8 mm tape and reel -115 - -135 BC327 SOT54 bulk, straight leads - -412 - BC327 SOT54A tape and reel, wide pitch - - -116 BC327 SOT54A tape ammopack, wide pitch - - -126 BC327 SOT 54 variant bulk, delta pinning (on-circle) - -112 - [1] For further information and the availability of packing methods, see Section 12. BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 16 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BC807_BC807W_ BC327_6 20091117 Product data sheet - BC807_BC807W_ BC327_5 Modifications: BC807_BC807W_ BC327_5 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • • • Table 3 “Pinning”: updated Figure 13 “Package outline SOT23 (TO-236AB)”: updated Figure 14 “Package outline SOT323 (SC-70)”: updated 20050221 Product data sheet CPCN200302007F CPCN200405006F BC807_4; BC807W_3; BC327_3 BC807_4 20040116 Product specification - BC807_3 BC807W_3 19990518 Product specification - BC807W_808W_CNV_2 BC327_3 19990415 Product specification - BC327_2 BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 17 of 19 BC807; BC807W; BC327 NXP Semiconductors 45 V, 500 mA PNP general-purpose transistors 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BC807_BC807W_BC327_6 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 06 — 17 November 2009 18 of 19 NXP Semiconductors BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 November 2009 Document identifier: BC807_BC807W_BC327_6