PHILIPS BYV32E-200

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYV32E, BYV32EB series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
a2
3
a1
1
IO(AV) = 20 A
IRRM = 0.2 A
k 2
trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
SOT78 (TO220AB)
DESCRIPTION
1
anode 1 (a)
2
cathode (k) 1
3
anode 2 (a)
tab
cathode (k)
SOT404
tab
tab
2
1
1 23
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VRRM
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
-
-150
150
-200
200
V
-
150
150
200
200
V
V
square wave; δ = 0.5;
Tmb ≤ 115 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
tp = 100 µs
current per diode
Storage temperature
Operating junction temperature
-
20
A
-
20
A
-
125
137
A
A
-
0.2
A
-
0.2
A
-40
-
150
150
˚C
˚C
BYV32E / BYV32EB
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
MAX.
UNIT
1 It is not possible to make connection to pin 2 of the SOT404 package
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
MAX.
UNIT
-
8
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
MIN.
TYP. MAX. UNIT
-
60
50
2.4
1.6
-
K/W
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
-
0.72
1.00
0.2
6
8
20
0.85
1.15
0.6
30
12.5
25
V
V
mA
µA
nC
ns
-
10
1
20
-
ns
V
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
trr1
Reverse recovery charge
Reverse recovery time
trr2
Vfr
Reverse recovery time
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYV32E, BYV32EB series
0.5A
F
dt
IF
t
0A
rr
time
Q
10%
s
I rec = 0.25A
IR
100%
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
PF / W
15
F
Tmb(max) / C
114
BYV32
Vo = 0.7 V
D = 1.0
Rs = 0.0183 Ohms
0.5
10
126
0.2
time
0.1
VF
5
tp
I
V
D=
fr
t
T
VF
0
time
Fig.2. Definition of Vfr
0
5
150
15
10
IF(AV) / A
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
R
10
PF / W
Tmb(max) / C
BYV32
Vo = 0.7 V
a = 1.57
2.2
8
4
Voltage Pulse Source
to ’scope
6
135.6
4
140.4
2
145.2
0
Fig.3. Circuit schematic for trr2
July 1998
130.8
2.8
D.U.T.
126
1.9
Rs = 0.0183 Ohms
Current
shunt
138
tp
T
0
2
4
IF(AV) / A
6
8
150
10
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
trr / ns
100 Qs / nC
1000
IF=10A
5A
2A
1A
IF=10A
100
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
10
-dIF/dt (A/us)
100
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Irrm / A
10
1.0
10
IF=10A
Transient thermal impedance, Zth j-mb (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
0.01
10
-dIF/dt (A/us)
1
0.001
1us
100
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV32E
10s
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
IF / A
30
Tj=150 C
Tj=25 C
20
10
typ
max
0
0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
July 1998
6
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
7
Rev 1.200