PHILIPS BCX53-16

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BCX51; BCX52; BCX53
PNP medium power transistors
Product specification
Supersedes data of 1997 Jul 04
1999 Apr 19
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Medium power general purposes
• Driver stages of audio amplifiers.
DESCRIPTION
handbook, halfpage
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BCX54, BCX55 and BCX56.
2
3
MARKING
TYPE
NUMBER
1
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCX51
AA
BCX52-16
AM
BCX51-10
AC
BCX53
AH
BCX51-16
AD
BCX53-10
AK
BCX52
AE
BCX53-16
AL
BCX52-10
AG
1999 Apr 19
1
Bottom view
2
3
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
2
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
BCX51
−
−45
V
BCX52
−
−60
V
−
−100
V
−
−45
V
BCX53
VCEO
MIN.
collector-emitter voltage
open base
BCX51
BCX52
−
−60
V
BCX53
−
−80
V
−
−5
V
VEBO
emitter-base voltage
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−1.5
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
1.3
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
94
K/W
Rth j-s
thermal resistance from junction to soldering point note 1
14
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 19
3
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
IE = 0; VCB = −30 V
−
−
−100
nA
ICBO
collector cut-off current
IE = 0; VCB = −30 V; Tj = 125 °C
−
−
−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
−100
nA
hFE
DC current gain
VCE = −2 V; see Fig.2
IC = −5 mA
40
−
−
IC = −150 mA
63
−
250
IC = −500 mA
25
−
−
BCX51-10; BCX52-10; BCX53-10
63
−
160
BCX51-16; BCX52-16; BCX53-16
100
−
250
IC = −150 mA; VCE = −2 V; see Fig.2
DC current gain
VCEsat
collector-emitter saturation voltage
IC = −500 mA; IB = −50 mA
−
−
−500
mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −2 V
−
−
−1
V
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz −
50
−
MHz
MBH730
160
handbook, full pagewidth
VCE = −2 V
hFE
120
80
40
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
1999 Apr 19
4
−103
IC (mA)
−104
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
1999 Apr 19
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
5
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 19
6
Philips Semiconductors
Product specification
PNP medium power transistors
BCX51; BCX52; BCX53
NOTES
1999 Apr 19
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 19
Document order number:
9397 750 05693