PHILIPS BCP51

BC636; BCP51; BCX51
45 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Type number[1]
Package
NPN complement
NXP
JEITA
JEDEC
BC636[2]
SOT54
SC-43A
TO-92
BC635
BCP51
SOT223
SC-73
-
BCP54
BCX51
SOT89
SC-62
TO-243
BCX54
[1]
Valid for all available selection groups.
[2]
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
n High current
n Two current gain selections
n High power dissipation capability
1.3 Applications
n
n
n
n
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
−45
V
IC
collector current
-
-
−1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
−1.5
A
hFE
DC current gain
VCE = −2 V;
IC = −150 mA
63
-
250
hFE selection -10
VCE = −2 V;
IC = −150 mA
63
-
160
hFE selection -16
VCE = −2 V;
IC = −150 mA
100
-
250
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
base
2
collector
3
emitter
2
1
2
3
1
3
001aab347
sym029
SOT54A
1
base
2
collector
3
emitter
2
1
2
1
3
3
001aab348
sym029
SOT54 variant
1
base
2
collector
3
emitter
2
1
2
3
1
3
001aab447
sym029
SOT223
1
base
2
collector
3
emitter
4
collector
4
2, 4
1
1
2
3
3
sym028
SOT89
1
emitter
2
collector
3
base
2
3
3
2
1
1
006aaa231
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
2 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
3. Ordering information
Table 4.
Ordering information
Type number[1]
Package
Name
Description
Version
BC636[2]
SC-43A
plastic single-ended leaded (through hole) package;
3 leads
SOT54
BCP51
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX51
SC-62
plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads
[1]
Valid for all available selection groups.
[2]
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
Marking code
BC636
C636
BC636-10
C63610
BCP51
BCP51
BCP51-10
BCP51/10
BCP51-16
BCP51/16
BCX51
AA
BCX51-10
AC
BCX51-16
AD
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
3 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−45
V
VCEO
collector-emitter voltage
open base
-
−45
V
VEBO
emitter-base voltage
open collector
-
−5
V
IC
collector current
-
−1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−1.5
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
−0.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
BC636
[1]
-
0.83
W
BCP51
[1]
-
0.65
W
[2]
-
1
W
[1]
-
0.5
W
[2]
-
0.9
W
[3]
-
1.3
W
BCX51
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
4 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
006aaa219
1.6
006aaa220
1.6
Ptot
(W)
Ptot
(W)
1.2
1.2
(1)
0.8
0.8
(2)
0.4
0
−75
0.4
−25
0
25
75
0
−75
125
175
Tamb (°C)
−25
0
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm2
FR4 PCB, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curve SOT54
Fig 2. Power derating curves SOT223
006aaa221
1.6
Ptot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
0
−75
−25
0
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 3. Power derating curves SOT89
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
5 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
BC636
[1]
-
-
150
K/W
BCP51
[1]
-
-
190
K/W
[2]
-
-
125
K/W
[1]
-
-
230
K/W
[2]
-
-
135
K/W
[3]
-
-
95
K/W
BC636
-
-
40
K/W
BCP51
-
-
17
K/W
BCX51
-
-
20
K/W
BCX51
thermal resistance from
junction to solder point
Rth(j-sp)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aaa222
103
Zth(j-a)
(K/W)
duty cycle =
102
1
0.5
0.75
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
t p (s)
103
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
typical values
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
6 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
006aaa223
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
t p (s)
103
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa817
103
duty cycle =
Zth(j-a)
(K/W)
102
10
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
7 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
006aaa224
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
t p (s)
103
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa225
103
Zth(j-a)
(K/W)
duty cycle =
102
1
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
t p (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
8 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
006aaa818
103
duty cycle =
Zth(j-a)
(K/W)
102
1.0
10
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
1
10−1
10−5
10−4
10−3
10−2
10−1
1
102
10
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V; IE = 0 A
-
-
−100
nA
VCB = −30 V; IE = 0 A;
Tj = 150 °C
-
-
−10
µA
-
-
−100
nA
63
-
-
63
-
250
40
-
-
63
-
160
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
hFE
DC current gain
VCE = −2 V
IC = −5 mA
IC = −150 mA
IC = −500 mA
DC current gain
VCE = −2 V
hFE selection -10
IC = −150 mA
hFE selection -16
IC = −150 mA
100
-
250
-
-
−0.5
V
-
-
−1
V
VCEsat
collector-emitter
saturation voltage
IC = −500 mA;
IB = −50 mA
[1]
VBE
base-emitter voltage
VCE = −2 V; IC = −500 mA
[1]
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
-
15
-
pF
fT
transition frequency
VCE = −5 V; IC = −50 mA;
f = 100 MHz
-
145
-
MHz
[1]
Pulse test: tp ≤ 300 µs; δ = 0.02.
BC636_BCP51_BCX51_8
Product data sheet
[1]
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
9 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
006aaa226
300
IB (mA) = −45 −40.5 −36
IC
(A)
(1)
hFE
006aaa230
−1.6
−31.5
−27
−22.5
−1.2
200
−18
−13.5
(2)
−0.8
(3)
−0.4
−9
100
0
−10−1
−1
−10
−4.5
−102
−103
−104
I C (mA)
VCE = −2 V
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
VCE (V)
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
006aaa227
−1200
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa228
−103
VBE
(mV)
−1000
VCEsat
(mV)
(1)
−800
−102
(2)
−600
(2)
(3)
(1)
−400
(3)
−200
−10−1
−1
−10
−102
−103
−104
I C (mA)
VCE = −2 V
−10
−10−1
−1
−102
−103
−104
I C (mA)
IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = −55 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC636_BCP51_BCX51_8
Product data sheet
−10
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
10 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
8. Package outline
0.45
0.38
4.2
3.6
0.45
0.38
4.2
3.6
0.48
0.40
3 max
1
0.48
0.40
1
2
4.8
4.4
2
4.8
4.4
2.54
5.08
1.27
3
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
Dimensions in mm
04-11-16
Fig 14. Package outline SOT54 (SC-43A/TO-92)
14.5
12.7
Dimensions in mm
04-06-28
Fig 15. Package outline SOT54A
0.45
0.38
4.2
3.6
6.7
6.3
3.1
2.9
1.27
1.8
1.5
4
2.5
max
1.1
0.7
0.48
0.40
1
7.3
6.7
3.7
3.3
2
4.8
4.4
2.54
1.27
3
1
5.2
5.0
14.5
12.7
2
2.3
4.6
Dimensions in mm
05-01-10
Fig 16. Package outline SOT54 variant
3
0.32
0.22
0.8
0.6
Dimensions in mm
04-11-10
Fig 17. Package outline SOT223 (SC-73)
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
2
0.53
0.40
1.5
1.2
0.8
3
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig 18. Package outline SOT89 (SC-62/TO-243)
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
11 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2] Package
Description
Packing quantity
1000
BC636
4000
5000
10000
SOT54
bulk, straight leads
-
-
-412
-
SOT54A
tape and reel, wide pitch
-
-
-
-116
tape ammopack, wide pitch
-
-
-
-126
SOT54 variant
bulk, delta pinning
-
-
-112
-
BCP51
SOT223
8 mm pitch, 12 mm tape and reel
-115
-135
-
-
BCX51
SOT89
8 mm pitch, 12 mm tape and reel; T1
[3]
-115
-135
-
-
8 mm pitch, 12 mm tape and reel; T3
[4]
-120
-
-
-
[1]
For further information and the availability of packing methods, see Section 12.
[2]
Valid for all available selection groups.
[3]
T1: normal taping
[4]
T3: 90° rotated taping
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
12 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
10. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC636_BCP51_BCX51_8
20080222
Product data sheet
-
BC636_BCP51_BCX51_7
Modifications:
•
Figure 11: amended
BC636_BCP51_BCX51_7
20070629
Product data sheet
-
BC636_BCP51_BCX51_6
BC636_BCP51_BCX51_6
20060329
Product data sheet
-
BC636_638_640_5
BCP51_52_53_5
BCX51_52_53_4
BC636_638_640_5
20041011
Product specification
-
BC636_638_640_4
BCP51_52_53_5
20030206
Product specification
-
BCP51_52_53_4
BCX51_52_53_4
20011010
Product specification
-
BCX51_52_53_3
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
13 of 15
BC636; BCP51; BCX51
NXP Semiconductors
45 V, 1 A PNP medium power transistors
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BC636_BCP51_BCX51_8
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 08 — 22 February 2008
14 of 15
NXP Semiconductors
BC636; BCP51; BCX51
45 V, 1 A PNP medium power transistors
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 February 2008
Document identifier: BC636_BCP51_BCX51_8