ADM7150

800 mA Ultralow Noise,
High PSRR, RF Linear Regulator
ADM7150
Data Sheet
FEATURES
TYPICAL APPLICATION CIRCUIT
ADM7150
Input voltage range: 4.5 V to 16 V
Maximum output current: 800 mA
Low noise
1.0 µV rms total integrated noise from 100 Hz to 100 kHz
1.6 µV rms total integrated noise from 10 Hz to 100 kHz
Noise spectral density: 1.7 nV√Hz typical from 10 kHz to 1 MHz
Power supply rejection ratio (PSRR) at 400 mA load
>90 dB from 1 kHz to 100 kHz, VOUT = 5 V
>60 dB at 1 MHz, VOUT = 5 V
Dropout voltage: 0.6 V at VOUT = 5 V, 800 mA load
Initial voltage accuracy: ±1%
Voltage accuracy over line, load and temperature: ±2%
Quiescent current (IGND): 4.3 mA at no load
Low shutdown current: 0.1 µA
Stable with a 10 µF ceramic output capacitor
Fixed output voltage options: 1.8 V, 2.8 V, 3.0 V, 3.3 V, 4.5 V,
4.8 V, and 5.0 V (16 outputs between 1.5 V and 5.0 V are
available)
Exposed pad 8-lead LFCSP and 8-lead SOIC packages
VIN = 6.2V
CIN
10µF
VIN
VOUT
EN
REF
VOUT = 5.0V
COUT
10µF
ON
CBYP
1µF
CREG
10µF
CREF
1µF
BYP
REF_SENSE
GND
VREG
11043-001
OFF
Figure 1. 5 V Output Circuit
APPLICATIONS
Regulated power noise sensitive applications
RF mixers, phase-locked loops (PLLs), voltage-controlled
oscillators (VCOs), and PLLs with integrated VCOs
Communications and infrastructure
Cable digital-to-analog converter (DAC) drivers
Backhaul and microwave links
GENERAL DESCRIPTION
The ADM7150 regulator typical output noise is 1.0 µV rms
from 100 Hz to 100 kHz for fixed output voltage options, and
the noise spectral density is 1.7 nV/√Hz from 10 kHz to 1 MHz.
The ADM7150 is available in 8-lead, 3 mm × 3 mm LFCSP and
8-lead SOIC packages, making it not only a very compact solution
but also providing excellent thermal performance for applications
requiring up to 800 mA of output current in a small, low profile
Rev. 0
100k
CBYP
CBYP
CBYP
CBYP
10k
= 1µF
= 10µF
= 100µF
= 1mF
1k
100
10
1
0.1
1
10
100
1k
FREQUENCY (Hz)
10k
100k
1M
11043-002
The ADM7150 is available in 1.8 V, 2.8 V, 3.0 V, 3.3 V, 4.5 V,
4.8 V, and 5.0 V fixed outputs. In addition, 16 fixed output
voltages between 1.5 V and 5.0 V are available upon request.
footprint. See the ADM7151 adjustable LDO to generate additional
output voltages.
NOISE SPECTRAL DENSITY (nV/√Hz)
The ADM7150 is a low dropout (LDO) linear regulator that
operates from 4.5 V to 16 V and provides up to 800 mA of
output current. Using an advanced proprietary architecture, it
provides high power supply rejection (>90 dB from 1 kHz to 1 MHz),
ultralow output noise (<1.7 nV√Hz), and achieves excellent line and
load transient response with a 10 µF ceramic output capacitor.
Figure 2. Noise Spectral Density (NSD) vs. Frequency for Various CBYP
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ADM7150
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Typical Performance Characteristics ..............................................7
Applications ....................................................................................... 1
Theory of Operation ...................................................................... 15
Typical Application Circuit ............................................................. 1
Applications Information .............................................................. 16
General Description ......................................................................... 1
Capacitor Selection .................................................................... 16
Revision History ............................................................................... 2
Enable (EN) and Undervoltage Lockout (UVLO) ................. 17
Specifications..................................................................................... 3
Start-Up Time ............................................................................. 18
Input and Output Capacitor Recommended Specifications ... 4
REF, BYP, and, VREG pins ........................................................ 18
Absolute Maximum Ratings ............................................................ 5
Current-Limit and Thermal Overload Protection ................. 19
Thermal Data ................................................................................ 5
Thermal Considerations............................................................ 19
Thermal Resistance ...................................................................... 5
Printed Circuit Board Layout Considerations........................ 21
ESD Caution .................................................................................. 5
Outline Dimensions ....................................................................... 22
Pin Configurations and Function Descriptions ........................... 6
Ordering Guide .......................................................................... 22
REVISION HISTORY
9/13—Revision 0: Initial Version
Rev. 0 | Page 2 of 24
Data Sheet
ADM7150
SPECIFICATIONS
VIN = VOUT + 1.2 V or VIN = 4.5 V, whichever is greater, VEN = VIN, IOUT = 10 mA, CIN = COUT = CREG = 10 µF, CREF = CBYP = 1 µF. TA = 25°C
for typical specifications. TJ = −40°C to +125°C for minimum/maximum specifications, unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE RANGE
OPERATING SUPPLY CURRENT
Symbol
VIN
IGND
SHUTDOWN CURRENT
OUTPUT NOISE
IIN-SD
OUTNOISE
NOISE SPECTRAL DENSITY
POWER SUPPLY REJECTION RATIO
NSD
PSRR
VOUT VOLTAGE ACCURACY
Voltage Accuracy
VOUT
VOUT REGULATION
Line Regulation
ΔVOUT/ΔVIN
Load Regulation 1
VOUT CURRENT-LIMIT THRESHOLD 2
DROPOUT VOLTAGE 3
ΔVOUT/ΔIOUT
ILIMIT
VDROPOUT
PULL-DOWN RESISTANCE
VOUT Pull-Down Resistance
VREG Pull-Down Resistance
VREF Pull-Down Resistance
VBYP Pull-Down Resistance
START-UP TIME 4
VOUT Start-Up Time
VREG Start-Up Time
VREF Start-Up Time
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
UNDERVOLTAGE THRESHOLDs
Input Voltage Rising
Input Voltage Falling
Hysteresis
VREG 5 UNDERVOLTAGE THRESHOLDS
VREG Rise
VREG Fall
Hysteresis
VOUT-PULL
VREG-PULL
VREF-PULL
VBYP-PULL
Test Conditions/Comments
IOUT = 0 µA
IOUT = 800 mA
VEN = 0 V
10 Hz to 100 kHz, independent of output voltage
100 Hz to 100 kHz, independent of output voltage
10 kHz to 1 MHz, independent of output voltage
1 kHz to 100 kHz, VIN = 6.2 V, VOUT = 5 V at 800 mA
1 MHz, VIN = 6.2 V, VOUT = 5 V at 800 mA
1 kHz to 100 kHz, VIN = 6.2 V, VOUT = 5 V at 400 mA
1 MHz, VIN = 6.2 V, VOUT = 5 V at 400 mA
1 kHz to 100 kHz, VIN = 5 V, VOUT = 3.3 V at 800 mA
1 MHz, VIN = 5 V, VOUT = 3.3 V at 800 mA
1 kHz to 100 kHz, VIN = 5 V, VOUT = 3.3 V at 400 mA
1 MHz, VIN = 5 V, VOUT = 3.3 V at 400 mA
VOUT = VREF
IOUT = 10 mA, TJ = 25°C
1 mA < IOUT < 800 mA, over line, load and
temperature
VIN = VOUT + 1.2 V or VOUT + 4.5 V, whichever is
greater, to 16 V
IOUT = 1 mA to 800 mA
Min
4.5
Max
16
7.0
12
3
Unit
V
mA
mA
µA
µV rms
µV rms
nV/√Hz
dB
dB
dB
dB
dB
dB
dB
dB
−1
−2
+1
+2
%
%
−0.01
+0.01
%/V
1.0
1.6
0.5
1.0
%/A
A
V
V
4.3
8.6
0.1
1.6
1.0
1.7
86
54
95
62
94
62
95
68
1.0
IOUT = 400 mA, VOUT = 5 V
IOUT = 800 mA, VOUT = 5 V
VEN = 0 V, VOUT = 1 V
VEN = 0 V, VREG = 1 V
VEN = 0 V, VREF = 1 V
VEN = 0 V, VBYP = 1 V
VOUT = 5 V
tSTART-UP
tREG-START-UP
tREF-START-UP
TSSD
TSSD-HYS
Typ
TJ rising
UVLORISE
UVLOFALL
UVLOHYS
3.85
VREGUVLORISE
VREGUVLOFALL
VREGUVLOHYS
2.55
0.4
1.2
0.3
0.6
600
34
800
500
Ω
kΩ
Ω
Ω
2.8
1.0
1.8
ms
ms
ms
155
15
°C
°C
4.49
V
V
mV
3.1
V
V
mV
240
210
Rev. 0 | Page 3 of 24
ADM7150
Parameter
EN INPUT
EN Input Logic High
EN Input Logic Low
EN Input Logic Hysteresis
EN Input Leakage Current
Data Sheet
Symbol
ENHIGH
ENLOW
ENHYS
IEN-LKG
Test Conditions/Comments
4.5 V ≤ VIN ≤ 16 V
Min
Typ
Max
3.2
0.8
VIN = 5 V
VEN = VIN or GND
225
0.1
1.0
Unit
V
V
mV
µA
Based on an end-point calculation using 1 mA and 800 mA loads. See Figure 7, Figure 16, and Figure 22 for typical load regulation performance for loads less than 1 mA.
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 5.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 5.0 V, or 4.5 V.
3
Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to achieve the nominal output voltage. Dropout applies only for
output voltages above 4.5 V.
4
Start-up time is defined as the time between the rising edge of VEN to VOUT, VREG, or VREF being at 90% of its nominal value.
5
The output voltage is turned off until the VREG UVLO rise threshold is crossed. The VREG output is turned off until the input voltage UVLO rise threshold is crossed.
1
2
INPUT AND OUTPUT CAPACITOR RECOMMENDED SPECIFICATIONS
Table 2.
Parameter
CAPACITANCE
Minimum Input 1
Minimum Regulator1
Minimum Output1
Minimum Bypass
Minimum Reference
CAPACITOR Equivalent Series Resistance (ESR)
CREG, COUT, CIN, CREF
CBYP
1
Symbol
CIN
CREG
COUT
CBYP
CREF
RESR
Test Conditions/Comments
TA = −40°C to +125°C
Min
Typ
Max
7.0
7.0
7.0
0.1
0.7
Unit
µF
µF
µF
µF
µF
TA = −40°C to +125°C
0.001
0.001
0.2
2.0
Ω
Ω
The minimum input, regulator, and output capacitance must be greater than 7.0 μF over the full range of operating conditions. The full range of operating conditions
in the application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are
recommended; however, Y5V and Z5U capacitors are not recommended for use with any LDO.
Rev. 0 | Page 4 of 24
Data Sheet
ADM7150
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
VIN to GND
VREG to GND
VOUT to GND
VOUT to BYP
EN to GND
BYP to GND
REF to GND
REF_SENSE to GND
Storage Temperature Range
Junction Temperature
Operating Ambient Temperature Range
Soldering Conditions
Rating
−0.3 V to +18 V
−0.3 V to VIN, or +6 V
(whichever is less)
−0.3 V to VREG, or +6 V
(whichever is less)
±0.3 V
−0.3 V to +18 V
−0.3 V to VREG, or +6 V
(whichever is less)
−0.3 V to VREG, or +6 V
(whichever is less)
−0.3 V to +6 V
−65°C to +150°C
150°C
−40°C to +125°C
JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADM7150 can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that TJ is within the specified
temperature limits. In applications with high power dissipation
and poor thermal resistance, the maximum ambient temperature
may have to be derated.
In applications with moderate power dissipation and low
printed circuit board (PCB) thermal resistance, the maximum
ambient temperature can exceed the maximum limit as long as
the junction temperature is within specification limits. The
junction temperature (TJ) of the device is dependent on the
ambient temperature (TA), the power dissipation of the device
(PD), and the junction to ambient thermal resistance of the
package (θJA).
Junction to ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction to ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θJA are based on a 4-layer, 4 in. × 3 in. circuit
board. See JESD51-7 and JESD51-9 for detailed information
on the board construction.
ΨJB is the junction to board thermal characterization parameter
with units of °C/W. ΨJB of the package is based on modeling and the
calculation using a 4-layer board. The JESD51-12, Guidelines for
Reporting and Using Electronic Package Thermal Information,
states that thermal characterization parameters are not the same
as thermal resistances. ΨJB measures the component power
flowing through multiple thermal paths rather than a single
path as in thermal resistance (θJB). Therefore, ΨJB thermal paths
include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
THERMAL RESISTANCE
θJA, θJC, and ΨJB are specified for the worst-case conditions, that is,
a device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
8-Lead LFCSP
8-Lead SOIC
ESD CAUTION
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
TJ = TA + (PD × θJA)
Rev. 0 | Page 5 of 24
θJA
36.7
36.9
θJC
23.5
27.1
ΨJB
13.3
18.6
Unit
°C/W
°C/W
ADM7150
Data Sheet
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
8 VIN
VREG 1
VOUT 2
7 EN
VOUT 2
TOP VIEW
(Not to Scale)
BYP 3
6 REF
GND 4
5 REF_SENSE
GND 4
NOTES
1. EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.
EXPOSED PAD ENHANCES THERMAL PERFORMANCE AND IS
ELECTRICALLY CONNECTED TO GND INSIDE THE PACKAGE.
CONNECT THE EXPOSED PAD TO THE GROUND PLANE ON
THE BOARD TO ENSURE PROPER OPERATION.
TOP VIEW
(Not to Scale)
VIN
7
EN
6
REF
5
REF_SENSE
NOTES
1. EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.
EXPOSED PAD ENHANCES THERMAL PERFORMANCE AND IS
ELECTRICALLY CONNECTED TO GND INSIDE THE PACKAGE.
CONNECT THE EXPOSED PAD TO THE GROUND PLANE ON
THE BOARD TO ENSURE PROPER OPERATION.
11043-003
BYP 3
ADM7150
8
ADM7150
11043-004
VREG 1
Figure 4. 8-Lead SOIC Pin Configuration
Figure 3. 8-Lead LFCSP Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
1
Mnemonic
VREG
2
3
4
5
6
VOUT
BYP
GND
REF_SENSE
REF
7
EN
8
VIN
EPAD
Description
Regulated Input Supply to LDO Amplifier. Bypass VREG to GND with a 10 µF or greater capacitor. Do not connect
a load to ground.
Regulated Output Voltage. Bypass VOUT to GND with a 10 µF or greater capacitor.
Low Noise Bypass Capacitor. Connect a 1 µF capacitor to GND to reduce noise. Do not connect a load to ground.
Ground Connection.
REF_SENSE must be connected to the REF pin for proper operation. Do not connect to VOUT or GND.
Low Noise Reference Voltage Output. Bypass REF to GND with a 1 µF capacitor. Short REF_SENSE to REF for fixed
output voltages. Do not connect a load to ground.
Enable. Drive EN high to turn on the regulator and drive EN low to turn off the regulator. For automatic startup,
connect EN to VIN.
Regulator Input Supply. Bypass VIN to GND with a 10 µF or greater capacitor.
Exposed Pad on the Bottom of the Package. The exposed pad enhances thermal performance and is electrically
connected to GND inside the package. Connect the exposed pad to the ground plane on the board to ensure
proper operation.
Rev. 0 | Page 6 of 24
Data Sheet
ADM7150
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = VOUT + 1.2 V, or VIN = 4.5 V, whichever is greater, VEN = VIN, IOUT = 10 mA, CIN = COUT = CREG = 10 µF, CREF = CBYP = 1 µF, TA = 25°C,
unless otherwise noted.
0.8
5.04
5.03
5.02
0.7
VOUT (V)
0.6
0.5
0.4
0.3
5.00
4.99
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
4.98
0.2
4.97
0.1
4.96
0
–25
0
25
50
75
100
125
TEMPERATURE (°C)
4.95
11043-005
–0.1
–50
6
5.04
18
5.03
16
GROUND CURRENT (mA)
20
5.01
5.00
4.99
4.96
4.95
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
–40
–5
14
14
16
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
10
8
6
4
2
25
85
125
JUNCTION TEMPERATURE (°C)
0
–40
5.04
9
5.03
8
GROUND CURRENT (mA)
10
5.02
5.01
5.00
4.99
4.98
6
4
3
1
ILOAD (mA)
11043-007
2
1000
125
5
4.96
100
85
7
4.97
10
25
Figure 9. Ground Current vs. Junction Temperature (TJ), VOUT = 5 V
5.05
4.95
–5
JUNCTION TEMPERATURE (°C)
Figure 6. Output Voltage (VOUT) vs. Junction Temperature (TJ), VOUT = 5 V
1
12
12
11043-006
VOUT (V)
5.02
4.97
10
Figure 8. Output Voltage (VOUT) vs. Input Voltage (VIN), VOUT = 5 V
5.05
4.98
8
VIN (V)
Figure 5. Shutdown Current vs. Temperature at
Various Input Voltages, VOUT = 5 V
VOUT (V)
5.01
11043-008
SHUTDOWN CURRENT (µA)
0.9
5.05
VIN = 6.2V
VIN = 6.5V
VIN = 7V
VIN = 10V
VIN = 16V
11043-009
1.0
Figure 7. Output Voltage (VOUT) vs. Load Current (ILOAD), VOUT = 5 V
0
1
10
100
1000
ILOAD (mA)
Figure 10. Ground Current vs. Load Current (ILOAD), VOUT = 5 V
Rev. 0 | Page 7 of 24
11043-010
1.1
ADM7150
Data Sheet
12
10
9
10
6
5
4
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3
2
1
0
5
6
7
8
9
10
11
12
13
14
15
16
4
0
4.6
IGND = 5mA
IGND = 10mA
IGND = 100mA
IGND = 200mA
IGND = 400mA
IGND = 800mA
4.8
5.0
5.2
5.4
5.6
5.8
6.0
VIN (V)
Figure 11. Ground Current vs. Input Voltage (VIN), VOUT = 5 V
Figure 14. Ground Current vs. Input Voltage (VIN) in Dropout, VOUT = 5 V
700
3.32
600
3.31
500
3.30
300
3.29
3.28
200
3.27
100
10
100
1000
ILOAD (mA)
3.26
–40
3.32
5.0
3.31
4.8
3.30
VOUT (V)
5.2
4.6
4.2
4.0
4.6
4.8
5.0
5.2
5.4
VIN (V)
5.6
5.8
85
125
3.29
3.28
= 5mA
= 10mA
= 100mA
= 200mA
= 400mA
= 800mA
3.27
6.0
11043-013
VDROPOUT
VDROPOUT
VDROPOUT
VDROPOUT
VDROPOUT
VDROPOUT
25
Figure 15. Output Voltage (VOUT) vs. Junction Temperature (TJ), VOUT = 3.3 V
Figure 12. Dropout Voltage vs. Load Current (ILOAD), VOUT = 5 V
4.4
–5
JUNCTION TEMPERATURE (°C)
Figure 13. Output Voltage (VOUT) vs. Input Voltage (VIN) in Dropout, VOUT = 5 V
Rev. 0 | Page 8 of 24
3.26
1
10
100
1000
ILOAD (mA)
Figure 16. Output Voltage (VOUT) vs. Load Current (ILOAD), VOUT = 3.3 V
11043-016
1
11043-012
0
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
11043-015
400
VOUT (V)
DROPOUT VOLTAGE (mV)
6
2
VIN (V)
VOUT (V)
8
11043-014
GROUND CURRENT (mA)
7
11043-011
GROUND CURRENT (mA)
8
Data Sheet
ADM7150
10
3.32
9
3.31
3.29
3.28
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3.27
3.26
6
4
8
7
6
5
4
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3
2
1
10
12
16
14
VIN (V)
0
11043-017
4
8
10
12
16
14
VIN (V)
Figure 17. Output Voltage (VOUT) vs. Input Voltage (VIN), VOUT = 3.3 V
Figure 20. Ground Current vs. Input Voltage (VIN), VOUT = 3.3 V
10
1.820
9
1.815
8
1.810
GROUND CURRENT (mA)
6
7
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
1.805
VOUT (V)
6
5
4
1.800
1.795
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3
2
1
1.790
1.785
–40
–5
25
85
1.780
11043-018
0
125
JUNCTION TEMPERATURE (°C)
Figure 18. Ground Current vs. Junction Temperature (TJ), VOUT = 3.3 V
–40
–5
25
85
11043-021
VOUT (V)
3.30
11043-020
GROUND CURRENT (mA)
8
125
JUNCTION TEMPERATURE (°C)
Figure 21. Output Voltage (VOUT) vs. Junction Temperature (TJ), VOUT = 1.8 V
1.820
10
9
1.815
1.810
7
1.805
VOUT (V)
6
5
4
1.800
1.795
3
1.790
2
0
1
10
100
1000
ILOAD (mA)
Figure 19. Ground Current vs. Load Current (ILOAD), VOUT = 3.3 V
1.780
1
10
100
1000
ILOAD (mA)
Figure 22. Output Voltage (VOUT) vs. Load Current (ILOAD), VOUT = 1.8 V
Rev. 0 | Page 9 of 24
11043-022
1.785
1
11043-019
GROUND CURRENT (mA)
8
ADM7150
Data Sheet
1.820
10
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
8
1.795
1.790
6
5
4
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3
2
1.785
1
4
8
6
10
12
14
0
11043-023
1.780
16
VIN (V)
4
12
10
16
Figure 26. Ground Current vs. Input Voltage (VIN), VOUT = 1.8 V
10
0
LOAD = 800mA
LOAD = 400mA
LOAD = 200mA
LOAD = 100mA
LOAD = 10mA
9
–20
8
7
–40
PSRR (dB)
6
5
4
2
1
–100
–5
85
25
–120
11043-024
0
–40
–60
–80
LOAD = 1mA
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
3
125
JUNCTION TEMPERATURE (°C)
1
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 24. Ground Current vs. Junction Temperature (TJ), VOUT =1.8 V
Figure 27. Power Supply Rejection Ratio (PSRR) vs. Frequency,
VOUT = 5 V, VIN = 6.2 V
10
0
400mV
500mV
600mV
700mV
800mV
900mV
9
–20
8
7
1.0V
1.1V
1.2V
1.3V
1.4V
1.5V
–40
PSRR (dB)
6
5
4
–60
–80
3
2
–100
1
0
1
10
100
1000
ILOAD (mA)
Figure 25. Ground Current vs. Load Current (ILOAD), VOUT = 1.8 V
–120
11043-025
GROUND CURRENT (mA)
14
VIN (V)
Figure 23. Output Voltage (VOUT) vs. Input Voltage (VIN), VOUT = 1.8 V
GROUND CURRENT (mA)
8
6
11043-026
1.800
7
1
10
100
1k
10k
FREQUENCY (Hz)
100k
1M
10M
11043-028
VOUT (V)
1.805
11043-027
1.810
9
GROUND CURRENT (mA)
1.815
Figure 28. Power Supply Rejection Ratio (PSRR) vs. Frequency for Various
Headroom Voltage, VOUT = 5 V, 400 mA Load
Rev. 0 | Page 10 of 24
Data Sheet
0
ADM7150
0
LOAD = 800mA
LOAD = 400mA
LOAD = 200mA
LOAD = 100mA
LOAD = 10mA
–20
–20
–60
–60
–80
–80
–100
–100
–120
1
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 29. Power Supply Rejection Ratio (PSRR) vs. Frequency,
VOUT = 3.3 V, VIN = 5 V
0
–120
0.3
0.7
0.9
1.1
1.3
1.5
HEADROOM (V)
Figure 32. Power Supply Rejection Ratio (PSRR) vs. Headroom Voltage,
400 mA Load, VOUT = 5 V
0
LOAD = 800mA
LOAD = 400mA
LOAD = 200mA
LOAD = 100mA
LOAD = 10mA
–20
0.5
11043-032
PSRR (dB)
–40
11043-029
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
10MHz
–20
–40
PSRR (dB)
–40
–60
–60
–80
–80
–100
–100
1
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 30. Power Supply Rejection Ratio (PSRR) vs. Frequency,
VOUT = 1.8 V, VIN = 5 V
0
–120
0.6
11043-030
–120
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
HEADROOM (V)
Figure 33. Power Supply Rejection Ratio (PSRR) vs. Headroom Voltage,
800 mA Load, VOUT = 5 V
0
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
10MHz
–20
0.7
11043-033
PSRR (dB)
–40
PSRR (dB)
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
10MHz
10Hz
100Hz
1kHz
10kHz
100kHz
1MHz
–10
–20
PSRR (dB)
PSRR (dB)
–40
–60
–30
–40
–80
–50
–100
0.4
0.5
0.6
0.7
0.8
HEADROOM (V)
0.9
1.0
1.1
1.2
Figure 31. Power Supply Rejection Ratio (PSRR) vs. Headroom Voltage,
100 mA Load, VOUT = 5 V
Rev. 0 | Page 11 of 24
–70
1
10
100
CAPACITANCE (µF)
Figure 34. Power Supply Rejection Ratio (PSRR) vs. CBYP,
400 mA Load, 400 mV Headroom, VOUT = 5 V
1000
11043-034
0.3
11043-031
–120
0.2
–60
ADM7150
Data Sheet
–50
10
10kHz
100kHz
1MHz
–60
PSRR (dB)
–70
–80
–90
–100
–120
1
10
100
1000
CAPACITANCE (µF)
0.1
1k
11043-035
–110
1
100k
10k
10M
1M
FREQUENCY (Hz)
Figure 35. Power Supply Rejection Ratio (PSRR) vs. Capacitance (CBYP),
400 mA Load, 1.2 V Headroom, VOUT = 5 V
11043-038
10Hz
100Hz
1kHz
NOISE SPECTRAL DENSITY (nV/√Hz)
–40
Figure 38. Output Noise Spectral Density,
1 kHz to 10 MHz, ILOAD = 10 mA
100k
2.0
NOISE SPECTRAL DENSITY (nV/√Hz)
1.8
1.6
NOISE (µVrms)
1.4
10Hz TO 100kHz
1.2
1.0
0.8
0.6
0.4
10k
1k
100
10
100
1000
LOAD CURRENT (mA)
1
0.1
11043-036
0
10
1
10
100
Figure 36. RMS Output Noise vs. Load Current (ILOAD), 10 Hz to 100 kHz
1k
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
NOISE SPECTRAL DENSITY (nV/√Hz)
1.8
NOISE (µVrms)
1.4
1.2
1.0
100Hz TO 100kHz
0.8
0.6
0.4
100k
Figure 39. Output Noise Spectral Density,
0.1 Hz to 100 kHz, ILOAD = 10 mA
2.0
1.6
10k
1k
FREQUENCY (Hz)
11043-039
0.2
100
10
1
100
LOAD CURRENT (mA)
1000
Figure 37. RMS Output Noise vs. Load Current (ILOAD), 100 Hz to 100 kHz
Rev. 0 | Page 12 of 24
0.1
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 40. Output Noise Spectral Density at Different Load Currents,
1 kHz to 10 MHz
11043-040
0
10
11043-037
0.2
Data Sheet
ADM7150
T
LOAD = 10mA
LOAD = 100mA
LOAD = 200mA
LOAD = 400mA
LOAD = 800mA
10k
1
1k
100
2
10
0.1
0.1
1
10
100
1k
10k
100k
FREQUENCY (Hz)
A CH1
CH1 500mA Ω BW CH2 10mV BW M4µs
T 11.0%
Figure 44. Load Transient Response, ILOAD = 10 mA to 800 mA,
VOUT = 5 V, VIN = 6.2 V, CH1 = IOUT, CH2 = VOUT
Figure 41. Output Noise Spectral Density at Different Load Currents,
0.1 Hz to 100 kHz
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
10k
1k
T
= 1µF
= 4.7µF
= 10µF
= 22µF
= 47µF
= 100µF
= 470µF
= 1mF
1
100
2
1
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
A CH1
CH1 200mA Ω BW CH2 10mV BW M2µs
T 11.0%
11043-042
1
0.1
460mA
11043-045
10
Figure 45. Load Transient Response, ILOAD = 100 mA to 600 mA,
VOUT = 5 V, VIN = 6.2 V, CH1 = IOUT, CH2 = VOUT
Figure 42. Output Noise Spectral Density at Different CBYP,
Load Current = 10 mA
T
T
1
1
CH1 500mA Ω BW CH2 20mV BW M20µs
A CH1
T 10.40%
200mA
A CH1
CH1 50.0mA Ω BW CH2 2.0mV BW M4µs
T 10.0%
50.0mA
Figure 46. Load Transient Response, ILOAD = 1 mA to100 mA,
VOUT = 5 V, VIN = 6.2 V, CH1 = IOUT, CH2 = VOUT
Figure 43. Load Transient Response, ILOAD = 1 mA to 800 mA,
VOUT = 5 V, VIN = 6.2 V, CH1 = IOUT, CH2 = VOUT
Rev. 0 | Page 13 of 24
11043-046
2
2
11043-043
NOISE SPECTRAL DENSITY (nV/√Hz)
100k
200mA
11043-044
1
11043-041
NOISE SPECTRAL DENSITY (nV/√Hz)
100k
ADM7150
Data Sheet
T
T
1
1
2
CH2 2.0mV Ω BW
M10µs
A CH1
T 10.0%
1.14V
CH2 2.0mV Ω BW
CH1 1.0V BW
Figure 47. Line Transient Response, 2 V Input Step, ILOAD = 800 mA,
VOUT = 1.8 V, VIN = 4.5 V, CH1 = VIN, CH2 = VOUT
M10µs
A CH3
T 10.0%
1.14V
11043-049
CH1 1.0V BW
11043-047
2
Figure 49. Line Transient Response, 2 V Input Step, ILOAD = 800 mA,
VOUT = 5 V, VIN = 6.2 V, CH1 = VIN, CH2 = VOUT
5.5
T
5.0
4.5
4.0
3.5
VOLTS
1
3.0
2.5
2.0
1.5
2
1.0
CH1 1.0V BW
CH2 2.0mV Ω BW
M10µs
A CH3
T 10.0%
1.14V
11043-048
0
Figure 48. Line Transient Response, 2 V Input Step, ILOAD = 800 mA,
VOUT = 3.3 V, VIN = 4.5 V, CH1 = VIN, CH2 = VOUT
–0.5
0
1
2
3
4
5
TIME (ms)
6
7
8
9
10
11043-050
VEN
VREG
VREF
VOUT
0.5
Figure 50. VOUT, VREF, VREG Start-Up Time After VEN Rising, VOUT = 3.3 V, VIN = 5 V
Rev. 0 | Page 14 of 24
Data Sheet
ADM7150
THEORY OF OPERATION
The ADM7150 is an ultralow noise, high power supply rejection
ratio (PSRR) linear regulator targeting radio frequency (RF)
applications. The input voltage range is 4.5 V to 16 V, and it can
deliver up to 800 mA of output current. Typical shutdown current
consumption is 0.1 µA at room temperature.
Optimized for use with 10 µF ceramic capacitors, the ADM7150
provides excellent transient performance.
VIN
ACTIVE
RIPPLE
FILTER
VREG
VOUT
SHORT CIRCUIT,
THERMAL
PROTECT
To maintain very high PSRR over a wide frequency range, the
ADM7150 architecture uses an internal active ripple filter. This
stage isolates the low output noise LDO from noise on VIN.
The result is that the PSRR of the ADM7150 is significantly
higher over a wider frequency range than any single stage LDO.
The ADM7150 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. When EN is high, VOUT
turns on, and when EN is low, VOUT turns off. For automatic
startup, EN can be tied to VIN.
GND
BYP
REFERENCE
By heavily filtering the reference voltage, the ADM7150 is able
to achieve 1.7 nV/√Hz output typical from 10 kHz to 1 MHz.
Because the error amplifier is always in unity gain, the output
noise is independent of the output voltage.
OTA
E/A
VIN
18V
REF
EN
VREG
Figure 51. Simplified Internal Block Diagram
6V
REF
REF_SENSE
Internally, the ADM7150 consists of a reference, an error amplifier,
and a P-channel MOSFET pass transistor. Output current is
delivered via the PMOS pass device, which is controlled by the
error amplifier. The error amplifier compares the reference
voltage with the feedback voltage from the output and amplifies
the difference. If the feedback voltage is lower than the reference
voltage, the gate of the PMOS device is pulled lower, allowing
more current to pass and increasing the output voltage. If the
feedback voltage is higher than the reference voltage, the gate of
the PMOS device is pulled higher, allowing less current to pass
and decreasing the output voltage.
6V
BYP
6V
OUT
EN
18V
6V
6V
6V
6V
6V
GND
18V
11043-052
SHUTDOWN
11043-051
REF_SENSE
Figure 52. Simplified ESD Protection Block Diagram
The ESD protection devices are shown in the block diagram as
Zener diodes (see Figure 52).
Rev. 0 | Page 15 of 24
ADM7150
Data Sheet
APPLICATIONS INFORMATION
BYP Capacitor
Output Capacitor
The ADM7150 is designed for operation with ceramic capacitors
but functions with most commonly used capacitors as long as
care is taken with regard to the effective series resistance (ESR)
value. The ESR of the output capacitor affects the stability of the
LDO control loop. A minimum of 10 µF capacitance with an
ESR of 0.2 Ω or less is recommended to ensure the stability of the
ADM7150. Output capacitance also affects transient response to
changes in load current. Using a larger value of output capacitance
improves the transient response of the ADM7150 to large changes
in load current. Figure 53 shows the transient responses for an
output capacitance value of 10 µF.
The BYP capacitor is necessary to filter the reference buffer. A
1 µF capacitor is typically connected between BYP and GND.
Capacitors as small as 0.1 µF can be used; however, the output
noise voltage of the LDO increases as a result.
In addition, the BYP capacitor value can be increased to reduce
the noise below 1 kHz at the expense of increasing the start-up
time of the LDO. Very large values of CBYP significantly reduce
the noise below 10 Hz. Tantalum capacitors are recommended for
capacitors larger than approximately 33 µF. A 1 μF ceramic
capacitor in parallel with the larger tantalum capacitor is required
to retain good noise performance at higher frequencies. Solid
tantalum capacitors are less prone to microphonic noise issues.
100k
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
CBYP
NOISE SPECTRAL DENSITY (nV/√Hz)
T
1
B
W
M4µs
A CH1
T 11.0%
200mA
1k
100
10
1
0.1
1
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 53. Output Transient Response, VOUT = 5 V, COUT = 10 µF,
CH1 = Load Current, CH2 = VOUT
Figure 54. Noise Spectral Density vs. Frequency, CBYP = 1 µF to 1 mF
10k
Connecting a 10 µF capacitor from VIN to GND reduces the
circuit sensitivity to PCB layout, especially when long input
traces or high source impedance are encountered.
To maintain the best possible stability and PSRR performance,
connect a 10 µF capacitor from VREG to GND. When more
than 10 µF of output capacitance is required, increase the input
and VREG capacitors to match it.
REF Capacitor
NOISE SPECTRAL DENSITY (nV/√Hz)
Input and VREG Capacitor
The REF capacitor is necessary to stabilize the reference amplifier.
Connect at least a 1 µF capacitor between REF and GND.
1Hz
10Hz
100Hz
400Hz
3Hz
30Hz
300Hz
1kHz
1k
100
10
1
1
10
100
1000
CBYP (µF)
Figure 55. Noise Spectral Density vs. Capacitance (CBYP) for
Different Frequencies
Rev. 0 | Page 16 of 24
11043-055
CH1 500mA Ω BW CH2 10mV
11043-053
2
10k
= 1µF
= 4.7µF
= 10µF
= 22µF
= 47µF
= 100µF
= 470µF
= 1mF
11043-054
CAPACITOR SELECTION
Data Sheet
ADM7150
Capacitor Properties
Substituting these values in Equation 1 yields
Any good quality ceramic capacitors can be used with the
ADM7150 as long as they meet the minimum capacitance
and maximum ESR requirements. Ceramic capacitors are
manufactured with a variety of dielectrics, each with different
behavior over temperature and applied voltage. Capacitors must
have a dielectric adequate to ensure the minimum capacitance
over the necessary temperature range and dc bias conditions.
X5R or X7R dielectrics with a voltage rating of 6.3 V to 50 V
are recommended. However, Y5V and Z5U dielectrics are
not recommended due to their poor temperature and dc bias
characteristics.
Figure 56 depicts the capacitance vs. dc bias voltage of a 1206,
10 µF, 10 V, X5R capacitor. The voltage stability of a capacitor is
strongly influenced by the capacitor size and voltage rating. In
general, a capacitor in a larger package or higher voltage rating
exhibits better stability. The temperature variation of the X5R
dielectric is ~±15% over the −40°C to +85°C temperature range
and is not a function of package or voltage rating.
CEFF = 9.72 µF × (1 − 0.15) × (1 − 0.1) = 7.44 µF
Therefore, the capacitor chosen in this example meets the
minimum capacitance requirement of the LDO over
temperature and tolerance at the chosen output voltage.
To guarantee the performance of the ADM7150, it is imperative
that the effects of dc bias, temperature, and tolerances on the
behavior of the capacitors be evaluated for each application.
ENABLE (EN) AND UNDERVOLTAGE LOCKOUT
(UVLO)
The ADM7150 uses the EN pin to enable and disable the VOUT
pin under normal operating conditions. As shown in Figure 57,
when a rising voltage on EN crosses the upper threshold, VOUT
turns on. When a falling voltage on EN crosses the lower threshold,
VOUT turns off. The hysteresis varies as a function of the input
voltage. For example, the EN hysteresis is approximately 200 mV
with an input voltage of 4.5 V.
3.5
12
3.0
10
8
VOUT (V)
CAPACITANCE (µF)
2.5
6
2.0
VOUT_EN_FALL
1.5
VOUT_EN_RISE
1.0
4
0.5
2
4
6
8
DC BIAS VOLTAGE (V)
10
1.1
1.2
1.3
1.4
1.5
1.6
VEN (V)
Figure 57. Typical VOUT Response to EN Pin Operation, VOUT = 3.3 V, VIN = 5 V
Figure 56. Capacitance vs. DC Bias Voltage
3.2
Use Equation 1 to determine the worst-case capacitance
accounting for capacitor variation over temperature,
component tolerance, and voltage.
3.0
CEFF = CBIAS × (1 − TEMPCO) × (1 − TOL)
(1)
where:
CBIAS is the effective capacitance at the operating voltage.
TEMPCO is the worst-case capacitor temperature coefficient.
TOL is the worst-case component tolerance.
EN RISE THRESHOLD (V)
2.8
2.6
–40°C
2.4
+125°C
2.2
+25°C
2.0
1.8
In this example, the worst-case temperature coefficient
(TEMPCO) over −40°C to +85°C is assumed to be 15% for an
X5R dielectric. The tolerance of the capacitor (TOL) is assumed
to be 10%, and CBIAS is 9.72 µF at 5 V, as shown in Figure 56.
1.6
1.4
6
8
10
12
VIN (V)
14
16
11043-058
0
11043-056
0
1.0
0
11043-057
2
Figure 58. Typical EN Rise Threshold vs. Input Voltage (VIN) for Various
Temperatures
Rev. 0 | Page 17 of 24
ADM7150
Data Sheet
START-UP TIME
2.4
The ADM7150 uses an internal soft start to limit the inrush
current when the output is enabled. The start-up time for a 5 V
output is approximately 3 ms from the time the EN active threshold
is crossed to when the output reaches 90% of its final value.
2.0
1.8
–40°C
The rise time of the output voltage (10% to 90%) is approximately
1.6
0.0012 × CBYP seconds
+25°C
+125°C
where CBYP is in microfarads.
1.4
6
ENABLE
CBYP = 1µF
CBYP = 4.7µF
CBYP = 10µF
1.2
8
10
12
14
16
VIN (V)
Figure 59. Typical EN Fall Threshold vs. Input Voltage (VIN) for Various
Temperatures
The ADM7150 also incorporates an internal undervoltage
lockout circuit to disable the output voltage when the input
voltage is less than the minimum input voltage rating of the
regulator. The upper and lower thresholds are internally fixed
with about 300 mV of hysteresis.
4
VOUT (V)
6
11043-059
5
1.0
3
2
1
0
3.5
0
0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020
TIME (Seconds)
3.0
11043-061
EN FALL THRESHOLD (V)
2.2
Figure 61. Typical Start-Up Behavior with CBYP = 1 µF to 10 µF
6
2.5
VOUT (V)
VOUT_VIN_FALL
2.0
5
1.5
4
VOUT_VIN_RISE
VOUT (V)
1.0
0.5
3
4.2
4.3
4.4
VIN (V)
4.5
1
ENABLE
CBYP = 10µF
CBYP = 47µF
CBYP = 330µF
Figure 60. Typical UVLO Hysteresis, VOUT = 3.3 V
Figure 60 shows the typical hysteresis of the UVLO function.
This hysteresis prevents on/off oscillations that can occur due to
noise on the input voltage as it passes through the threshold
points.
0
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
TIME (Seconds)
11043-062
4.1
11043-060
2
0
4.0
Figure 62. Typical Start-Up Behavior with CBYP = 10 µF to 330 µF
REF, BYP, AND, VREG PINS
REF, BYP, and VREG are internally generated voltages that
require external bypass capacitors for proper operation. Do not,
under any circumstances, connect any loads to these pins because
doing so compromises the noise and PSRR performance of the
ADM7150. Using larger values of CBYP, CREF, and CREG is acceptable
but can increase the start-up time as described in the Start-Up
Time section.
Rev. 0 | Page 18 of 24
Data Sheet
ADM7150
CURRENT-LIMIT AND THERMAL OVERLOAD
PROTECTION
The ADM7150 is protected against damage due to excessive
power dissipation by current and thermal overload protection
circuits. The ADM7150 is designed to current-limit when the
output load reaches 1.2 A (typical). When the output load
exceeds 1.2 A, the output voltage is reduced to maintain a
constant current limit.
Thermal overload protection is included, which limits the
junction temperature to a maximum of 155°C (typical). Under
extreme conditions (that is, high ambient temperature and/or
high power dissipation) when the junction temperature starts to
rise above 155°C, the output is turned off, reducing the output
current to zero. When the junction temperature drops below
140°C, the output is turned on again, and output current is
restored to its operating value.
Consider the case where a hard short from VOUT to GND occurs.
At first, the ADM7150 current limits, so that only 1.2 A is
conducted into the short. If self heating of the junction is great
enough to cause its temperature to rise above 155°C, thermal
shutdown activates, turning off the output and reducing the
output current to zero. As the junction temperature cools and
drops below 140°C, the output turns on and conducts 1.2 A into
the short, again causing the junction temperature to rise above
155°C. This thermal oscillation between 140°C and 155°C
causes a current oscillation between 1.2 A and 0 mA that
continues as long as the short remains at the output.
Current-limit and thermal limit protections are intended to
protect the device against accidental overload conditions. For
reliable operation, device power dissipation must be externally
limited so that the junction temperature does not exceed 150°C.
THERMAL CONSIDERATIONS
In applications with low input to output voltage differential, the
ADM7150 does not dissipate much heat. However, in applications
with high ambient temperature and/or high input voltage, the
heat dissipated in the package may become large enough that it
causes the junction temperature of the die to exceed the maximum
junction temperature of 150°C.
When the junction temperature exceeds 155°C, the converter
enters thermal shutdown. It recovers only after the junction
temperature decreases below 140°C to prevent any permanent
damage. Therefore, thermal analysis for the chosen application
is important to guarantee reliable performance over all conditions.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to the power dissipation, as shown in Equation 2.
To guarantee reliable operation, the junction temperature of the
ADM7150 must not exceed 150°C. To ensure that the junction
temperature stays below this maximum value, the user must be
aware of the parameters that contribute to junction temperature
changes. These parameters include ambient temperature, power
dissipation in the power device, and thermal resistances
between the junction and ambient air (θJA). The θJA number is
dependent on the package assembly compounds that are used
and the amount of copper used to solder the package GND pin
and exposed pad to the PCB.
Table 6 shows typical θJA values of the 8-lead SOIC and 8-lead
LFCSP packages for various PCB copper sizes.
Table 7 shows the typical ΨJB values of the 8-lead SOIC and
8-lead LFCSP.
Table 6. Typical θJA Values
Copper Size (mm2)
251
100
500
1000
6400
1
θJA (°C/W)
8-Lead LFCSP
8-Lead SOIC
165.1
165
125.8
126.4
68.1
69.8
56.4
57.8
42.1
43.6
Device soldered to minimum size pin traces.
Table 7. Typical ΨJB Values
Package
8-Lead LFCSP
8-Lead SOIC
ΨJB (°C/W)
15.1
17.9
The junction temperature of the ADM7150 is calculated from
the following equation:
TJ = TA + (PD × θJA)
(2)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = [(VIN − VOUT) × ILOAD] + (VIN × IGND)
(3)
where:
VIN and VOUT are the input and output voltages, respectively.
ILOAD is the load current.
IGND is the ground current.
Power dissipation due to ground current is quite small and can
be ignored. Therefore, the junction temperature equation simplifies
to the following:
TJ = TA + {[(VIN − VOUT) × ILOAD] × θJA}
(4)
As shown in Equation 4, for a given ambient temperature, input
to output voltage differential, and continuous load current, there
exists a minimum copper size requirement for the PCB to ensure
that the junction temperature does not rise above 150°C.
The heat dissipation from the package can be improved by
increasing the amount of copper attached to the pins and
exposed pad of the ADM7150. Adding thermal planes under
the package also improves thermal performance. However, as
listed in Table 6, a point of diminishing returns is eventually
reached, beyond which an increase in the copper area does not
yield significant reduction in the junction to ambient thermal
resistance.
Rev. 0 | Page 19 of 24
ADM7150
Data Sheet
145
125
115
105
95
85
75
115
102
95
85
75
65
55
6400mm 2
500mm 2
25mm 2
TJ MAX
35
65
25
0
6400mm 2
500mm 2
25mm 2
TJ MAX
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
TOTAL POWER DISSIPATION (W)
TOTAL POWER DISSIPATION (W)
Figure 66. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 25°C
160
150
JUNCTION TEMPERATURE (°C)
Figure 63. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 25°C
160
150
140
130
120
110
100
140
130
120
110
100
90
80
6400mm 2
500mm 2
25mm 2
TJ MAX
70
60
90
50
80
0
6400mm 2
500mm 2
25mm 2
TJ MAX
60
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
TOTAL POWER DISSIPATION (W)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
TOTAL POWER DISSIPATION (W)
Figure 67. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 50°C
11043-064
70
Figure 64. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 50°C
155
JUNCTION TEMPERATURE (°C)
145
155
145
135
125
115
105
135
125
115
105
95
85
6400mm 2
500mm 2
25mm 2
TJ MAX
75
95
65
85
0
6400mm 2
500mm 2
25mm 2
TJ MAX
65
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
TOTAL POWER DISSIPATION (W)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TOTAL POWER DISSIPATION (W)
11043-065
75
11043-067
25
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
Figure 65. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP, TA = 85°C
Rev. 0 | Page 20 of 24
Figure 68. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC, TA = 85°C
11043-068
55
35
JUNCTION TEMPERATURE (°C)
125
45
45
JUNCTION TEMPERATURE (°C)
135
11043-063
JUNCTION TEMPERATURE (°C)
135
145
11043-066
155
155
JUNCTION TEMPERATURE (°C)
Figure 63 to Figure 68 show junction temperature calculations for
different ambient temperatures, power dissipation, and areas of
PCB copper.
Data Sheet
ADM7150
Thermal Characterization Parameter (ΨJB)
When board temperature is known, use the thermal
characterization parameter, ΨJB, to estimate the junction
temperature rise (see Figure 69 and Figure 70). Maximum
junction temperature (TJ) is calculated from the board temperature
(TB) and power dissipation (PD) using the following formula:
TJ = TB + (PD × ΨJB)
(5)
The typical value of ΨJB is 15.1°C/W for the 8-lead LFCSP
package and 17.9°C/W for the 8-lead SOIC package.
PRINTED CIRCUIT BOARD LAYOUT
CONSIDERATIONS
Place the input capacitor as close as possible to the VIN and GND
pins. Place the output capacitor as close as possible to the VOUT
and GND pins. Place the bypass capacitors for VREG, VREF, and
VBYP close to the respective pins and GND. Use of an 0805,
0603, or 0402 size capacitor achieves the smallest possible
footprint solution on boards where area is limited.
160
120
100
80
60
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
TOTAL POWER DISSIPATION (W)
Figure 69. Junction Temperature vs. Total Power Dissipation for
the 8-Lead LFCSP
11043-071
40
11043-069
JUNCTION TEMPERATURE (°C)
140
Figure 71. Example 8-Lead LFCSP PCB Layout
160
120
100
80
60
TB = 25°C
TB = 50°C
TB = 65°C
TB = 85°C
TJ MAX
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
TOTAL POWER DISSIPATION (W)
Figure 70. Junction Temperature vs. Total Power Dissipation for
the 8-Lead SOIC
11043-072
40
11043-070
JUNCTION TEMPERATURE (°C)
140
Figure 72. Example 8-Lead SOIC PCB Layout
Rev. 0 | Page 21 of 24
ADM7150
Data Sheet
OUTLINE DIMENSIONS
2.44
2.34
2.24
3.10
3.00 SQ
2.90
0.50 BSC
8
5
PIN 1 INDEX
AREA
1.70
1.60
1.50
EXPOSED
PAD
0.50
0.40
0.30
BOTTOM VIEW
0.05 MAX
0.02 NOM
COPLANARITY
0.08
0.203 REF
0.30
0.25
0.20
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
11-28-2012-C
0.80
0.75
0.70
SEATING
PLANE
0.20 MIN
PIN 1
INDICATOR
(R 0.15)
1
4
TOP VIEW
COMPLIANT TO JEDEC STANDARDS MO-229-WEED
Figure 73. 8-Lead Lead Frame Chip Scale Package [LFCSP_WD]
3 mm × 3 mm Body, Very Very Thin, Dual Lead
(CP-8-11)
Dimensions shown in millimeters
5.00
4.90
4.80
3.098
0.356
5
1
4
6.20
6.00
5.80
4.00
3.90
3.80
2.41
0.457
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
BOTTOM VIEW
1.27 BSC
3.81 REF
TOP VIEW
1.65
1.25
1.75
1.35
SEATING
PLANE
0.50
0.25
0.10 MAX
0.05 NOM
COPLANARITY
0.10
0.51
0.31
8°
0°
45°
0.25
0.17
1.04 REF
1.27
0.40
COMPLIANT TO JEDEC STANDARDS MS-012-A A
06-03-2011-B
8
Figure 74. 8-Lead Standard Small Outline Package, with Exposed Pad [SOIC_N_EP]
Narrow Body
(RD-8-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
ADM7150ACPZ-1.8-R2
ADM7150ACPZ-3.3-R2
ADM7150ACPZ-4.5-R2
ADM7150ACPZ-4.8-R2
ADM7150ACPZ-5.0-R2
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Output Voltage
1.8
3.3
4.5
4.8
5.0
Package Description
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
Rev. 0 | Page 22 of 24
Package Option
CP-8-11
CP-8-11
CP-8-11
CP-8-11
CP-8-11
Branding
LP3
LNA
LNL
LNM
LNB
Data Sheet
Model 1
ADM7150ACPZ-1.8-R7
ADM7150ACPZ-3.3-R7
ADM7150ACPZ-4.5-R7
ADM7150ACPZ-4.8-R7
ADM7150ACPZ-5.0-R7
ADM7150ARDZ-1.8
ADM7150ARDZ-2.8
ADM7150ARDZ-3.0
ADM7150ARDZ-3.3
ADM7150ARDZ-5.0
ADM7150ARDZ-3.0-R7
ADM7150ARDZ-3.3-R7
ADM7150ARDZ-5.0-R7
ADM7150CP-EVALZ
1
ADM7150
Temperature Range
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
−40°C to +125°C
Output Voltage
1.8
3.3
4.5
4.8
5.0
1.8
2.8
3.0
3.3
5.0
3.0
3.3
5.0
5.0
Package Description
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead LFCSP_WD
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
8-Lead SOIC_N_EP
Evaluation Board
Z = RoHS Compliant Part.
Rev. 0 | Page 23 of 24
Package Option
CP-8-11
CP-8-11
CP-8-11
CP-8-11
CP-8-11
RD-8-2
RD-8-2
RD-8-2
RD-8-2
RD-8-2
RD-8-2
RD-8-2
RD-8-2
Branding
LP3
LNA
LNL
LNM
LNB
ADM7150
Data Sheet
NOTES
©2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11043-0-9/13(0)
Rev. 0 | Page 24 of 24
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