PHILIPS MPSA92

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
MPSA92
PNP high-voltage transistor
Product data sheet
Supersedes data of 2001 Dec 07
2004 Aug 20
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
MPSA92
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• High voltage (max. 300 V).
1
collector
2
base
3
emitter
APPLICATIONS
DESCRIPTION
• General purpose switching and amplification.
handbook, halfpage1
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: MPSA42.
1
2
3
2
3
MAM280
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−300
V
VCEO
collector-emitter voltage
open base
−
−300
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
625
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
2004 Aug 20
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
MPSA92
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
200
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −200 V
−
−250
nA
IEBO
emitter cut-off current
IC = 0; VBE = −3 V
−
−100
nA
hFE
DC current gain
VCE = −10 V; note 1
IC = −1 mA
25
−
IC = −10 mA
40
−
IC = −30 mA
25
−
VCEsat
collector-emitter saturation voltage IC = −20 mA; IB = −2 mA; note 1
−
−500
mV
VBEsat
base-emitter saturation voltage
IC = −20 mA; IB = −2 mA; note 1
−
−900
mV
Cc
collector capacitance
IE =ie = 0; VCB = −20 V; f = 1 MHz
−
6
pF
fT
transition frequency
IC = −10 mA; VCE = −20 V;
f = 100 MHz
50
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Aug 20
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
MPSA92
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Aug 20
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
4
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PNP high-voltage transistor
MPSA92
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Aug 20
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/05/pp6
Date of release: 2004 Aug 20
Document order number: 9397 750 13633