INTEGRATED CIRCUITS DATA SHEET TDA7021T FM radio circuit for MTS Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T GENERAL DESCRIPTION The TDA7021T integrated radio receiver circuit is for portable radios, stereo as well as mono, where a minimum of periphery is important in terms of small dimensions and low cost. It is fully compatible for applications using the low-voltage micro tuning system (MTS). The IC has a frequency locked loop (FLL) system with an intermediate frequency of 76 kHz. The selectivity is obtained by active RC filters. The only function to be tuned is the resonant frequency of the oscillator. Interstation noise as well as noise from receiving weak signals is reduced by a correlation mute system. Special precautions have been taken to meet local oscillator radiation requirements. Because of the low intermediate frequency, low pass filtering of the MUX signal is required to avoid noise when receiving stereo. 50 kHz roll-off compensation, needed because of the low pass characteristic of the FLL, is performed by the integrated LF amplifier. For mono application this amplifier can be used to directly drive an earphone. The field-strength detector enables field-strength dependent channel separation control. Features • RF input stage • Loop amplifier • Mixer • Internal reference circuit • Local oscillator • LF amplifier for • IF amplifier/limiter − mono earphone amplifier or • Frequency detector − MUX filter • Field-strength dependent channel separation control facility • Mute circuit • MTS compatible QUICK REFERENCE DATA PARAMETER CONDITIONS −3 dB limiting Signal handling (e.m.f.) MAX. UNIT − 6,0 V l4 − 6,3 − mA frf 1,5 − 110 MHz mute disabled EMF − 4 − µV source impedance = 75 Ω EMF − 200 − mV Vo − 90 − mV VP = 3 V source impedance = 75 Ω; AF output voltage PACKAGE OUTLINE 16-lead mini-pack; plastic (SO 16; SOT109A); SOT109-1; 1996 July 24. May 1992 TYP. 1,8 RF input frequency Sensitivity (e.m.f.) for MIN. VP = V4-3 Supply voltage (pin 4) Supply current SYMBOL 2 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Philips Semiconductors FM radio circuit for MTS May 1992 3 Product specification TDA7021T Fig.1 Block diagram. Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage (pin 4) VP = V4-3 − 7,0 V Oscillator voltage V5-4 VP−0,5 VP + 0,5 V Storage temperature range Tstg −55 +150 °C Operating ambient temperature range Tamb −10 +70 °C THERMAL RESISTANCE From junction to ambient Rth j-a 300 K/W DC CHARACTERISTICS VP = 3 V, Tamb = 25 °C, measured in circuit of Fig.4, unless otherwise specified PARAMETER CONDITIONS Supply voltage (pin 4) SYMBOL MIN. TYP. MAX. UNIT VP = V4-3 1,8 3,0 6,0 V I4 − 6,3 − mA Oscillator current I5 − 250 − µA Voltage at pin 13 V13-3 − 0,9 − V Output voltage (pin 14) V14-3 − 1,3 − V Supply current VP = 3 V Fig.2 Supply current as a function of the supply voltage. May 1992 4 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T AC CHARACTERISTICS (MONO OPERATION) VP = 3 V; Tamb = 25 °C; measured in Fig.5; frf = 96 MHz modulated with ∆f = ±22,5 kHz; fm = 1 kHz; EMF = 0,3 mV (e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified PARAMETER Sensitivity (e.m.f.) for −3 dB limiting CONDITIONS SYMBOL MIN. TYP. MAX. UNIT see Fig.3 EMF − 4,0 − µV for −3 dB muting EMF − 5,0 − µV for (S+N)/N = 26 dB EMF − 7,0 − µV Signal handling (e.m.f.) muting disabled THD < 10%; ∆f = ± 75 kHz EMF − 200 − mV (S+N)/N − 60 − dB ∆f = ± 22,5 kHz THD − 0,7 − % ∆f = ± 75 kHz THD − 2,3 − % AMS − 50 − dB RR − 30 − dB V5-4(rms) − 250 − mV ∆f osc ----------------∆T amb − 5 − kHz/°C S+300 − 46 − dB Signal-to-noise ratio Total harmonic distortion AM suppression of output voltage ratio of AM signal (fm = 1 kHz; m = 80%) to FM signal (fm = 1 kHz; ∆f = 75 kHz) Ripple rejection ∆VP = 100 mV; f = 1 kHz Oscillator voltage (r.m.s. value) Variation of oscillator frequency with temperature Selectivity VP = 1 V see Fig.9; no modulation S−300 − 30 − dB AFC range ±∆frf − 160 − kHz Mute range ±∆frf − 120 − kHz pre-emphasis B − 10 − kHz RL (pin 14) = 100 Ω Vo(rms) − 90 − mV Io(dc) −100 − +100 µA Io(ac) − 3 − mA Audio bandwidth ∆Vo = 3 dB; measured with 50 µs AF output voltage (r.m.s. value) AF output current max. d.c. load max. a.c. load (peak value) May 1992 THD = 10% 5 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T Fig.3 Field strength voltage (V9-3) at Rsource = 1 kΩ; f = 96,75 MHz; VP = 3 V. Fig.4 May 1992 Mono operation: AF output voltage (Vo) and total harmonic distortion (THD) as functions of input e.m.f. (EMF); Rsource = 75 Ω; frf = 96 MHz; 0 dB = 90 mV. For S+N and noise curves (1) is with muting enabled and (2) is with muting disabled; signal ∆f = ± 22,5 kHz and fm = 1 kHz. For THD curve, ∆f = ± 75 kHz and fm = 1 kHz. 6 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T 1) The AF output can be decreased by disconnecting the 100 nF capacitor from pin 16. Fig.5 Test circuit for mono operation. AC CHARACTERISTICS (STEREO OPERATION) VP = 3 V; Tamb = 25 °C; measured in Fig.8; frf = 96 MHz modulated with pilot ∆f = ± 6,75 kHz and AF signal ∆f = ±22,5 kHz; fm = 1 kHz; EMF = 1 mV (e.m.f. at a source impedance of 75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Sensitivity (e.m.f.) for (S+N)/N = 26 dB see Fig.8; pilot off Selectivity see Fig.9; no modulation May 1992 − 11 − µV S+300 − 40 − dB S−300 − 22 − dB (S+N)/N − 50 − dB at frf = 97 MHz α − 26 − dB at frf = 87,5 MHz and 108 MHz α − 14 − dB Signal-to-noise ratio Channel separation EMF Vi = L-signal; fm = 1 kHz; pilot on: 7 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T Fig.6 Stereo operation: signal/noise and channel separation of TDA7021T when used in the circuit of Fig.8. Fig.7 Stereo operation: channel separation as a function of audio frequency in the circuit of Fig.8. May 1992 8 Philips Semiconductors Product specification FM radio circuit for MTS Fig.8 May 1992 TDA7021T Stereo application in combination with a low voltage PLL stereo decoder (TDA7040T) and a low voltage mono/stereo power amplifier (TDA7050T). 9 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T Fig.9 Test set-up; Vi = 30 mV; fi = 76 kHz; selective voltmeter at output has Ri ≥ 1 MΩ and Ci ≤ 8 pF; fo = fi. Note to Fig. 9 This test set-up is to incorporate the circuit of Fig.5 for mono operation or the circuit of Fig.8 for stereo operation. For either circuit, replace the 100 nF capacitor at pin 6 with R6 (100 kΩ) as shown above. Selectivity S+300 = 20 log May 1992 Vo | (300 kHz − fi) S−300 = 20 log Vo | fi 10 Vo | (300 kHz + fi) Vo | fi Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.244 0.050 0.041 0.228 0.039 0.016 0.028 0.020 inches 0.010 0.057 0.069 0.004 0.049 0.01 0.01 0.028 0.004 0.012 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07S MS-012AC May 1992 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-23 97-05-22 11 o 8 0o Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. May 1992 12 Philips Semiconductors Product specification FM radio circuit for MTS TDA7021T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 13