PHILIPS NE5532D

INTEGRATED CIRCUITS
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
Product specification
IC11 Data Handbook
1997 Sept 29
Philips Semiconductors
Product specification
Internally-compensated dual low noise
operational amplifier
DESCRIPTION
NE/SA/SE5532/5532A
PIN CONFIGURATIONS
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
FE, N, D8 Packages
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
8 V+
OUTPUT A
1
INVERTING INPUT A
2
NON-INVERTING INPUT A
3
6 INVERTING INPUT B
V-
4
5 NON-INVERTING INPUT B
A
7 OUTPUT B
B
TOP VIEW
D Package1
FEATURES
• Small-signal bandwidth: 10MHz
• Output drive capability: 600Ω, 10VRMS
• Input noise voltage: 5nV Hz (typical)
• DC voltage gain: 50000
• AC voltage gain: 2200 at 10kHz
• Power bandwidth: 140kHz
• Slew rate: 9V/µs
• Large supply voltage range: ±3 to ±20V
• Compensated for unity gain
–INA
1
16
NC
+INA
2
15
NC
NC
3
14
NC
–VCC
4
13
OUTA
NC
5
12
+VCC
NC
6
11
OUTB
+INB
7
10
NC
–INB
8
9
NC
TOP VIEW
NOTE:
1. SOL and non-standard pinout.
SL00332
Figure 1. Pin Configurations
ORDERING INFORMATION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Dual In-Line Package (DIP)
DESCRIPTION
0 to 70°C
NE5532N
SOT97-1
8-Pin Plastic Dual In-Line Package (DIP)
–40°C to +85°C
SA5532N
SOT97-1
8-Pin Plastic Dual In-Line Package (DIP)
–40°C to +85°C
SA5532AN
SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP)
0 to 70°C
NE5532FE
0580A
8-Pin Plastic Dual In-Line Package (DIP)
0 to 70°C
NE5532AN
SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP)
0 to 70°C
NE5532AF
0580A
8-Pin Ceramic Dual In-Line Package (CERDIP)
-55°C to +125°C
SE5532FE
0580A
8-Pin Ceramic Dual In-Line Package (CERDIP)
-55°C to +125°C
SE5532AF
0580A
8-Pin Small Outline Package (SO)
0 to 70°C
NE5532AD8
SOT96-1
8-Pin Small Outline Package (SO)
–40°C to 85°C
SA5532D8
SOT96-1
8-Pin Small Outline Package (SO)
–40°C to 85°C
SA5532AD8
SOT96-1
8-Pin Small Outline Package (SO)
-55°C to +125°C
SE5532AD8
SOT96-1
8-Pin Small Outline Package (SO)
0 to 70°C
NE5532D8
SOT96-1
8-Pin Small Outline Package (SO)
–40°C to 85°C
SA5532D8
SOT96-1
8-Pin Small Outline Package (SO)
–40°C to 85°C
SA5532AD8
SOT96-1
8-Pin Small Outline Package (SO)
-55°C to +125°C
SE5532D8
SOT96-1
0 to 70°C
NE5532D
SOT162-1
-55°C to +125°C
SE5532N
SOT38-4
16-Pin Plastic Small Outline Large (SOL) Package
16-Pin Plastic Dual In-Line Package (DIP)
1997 Sept 29
2
853-0949 16639
Philips Semiconductors
Product specification
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
±22
V
±VSUPPLY
V
±0.5
V
Operating temperature range
SA5532/A
NE5532/A
SE5532/A
–40 to +85
0 to 70
-55 to +125
°C
°C
°C
TSTG
Storage temperature
-65 to +150
°C
TJ
Junction temperature
150
°C
PD
Maximum power dissipation,
TA=25°C (still-air)2
8 D8 package
8 N package
8 FE package
16 D package
780
1200
1000
1200
mW
mW
mW
mW
Lead soldering temperature (10sec max)
300
°C
VS
Supply voltage
VIN
Input voltage
VDIFF
Differential input voltage1
TA
TSOLD
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.
2. Thermal resistances of the above packages are as follows:
N package at 100°C/W
F package at 135°C/W
D package at 105°C/W
D8 package at 160°C/W
1997 Sept 29
3
Philips Semiconductors
Product specification
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
DC ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified. 1, 2, 3
SYMBOL
VOS
PARAMETER
TEST CONDITIONS
SE/5532/5532A
Min
Offset voltage
Typ
Max
0.5
Over temperature
∆VOS/∆T
IOS
Min
∆IOS/∆T
Max
2
3
0.5
4
5
mV
mV
µV/°C
100
200
10
150
200
nA
nA
pA/°C
800
1000
nA
nA
nA/°C
16
mA
5
200
Input current
200
Over temperature
∆IB/∆T
200
400
700
200
5
8
UNIT
Typ
5
Offset current
Over temperature
IB
NE/SA/5532/5532A
5
10.5
8
ICC
Supply current
VCM
Common-mode input range
±12
±13
±12
±13
V
CMRR
Common-mode rejection ratio
80
100
70
100
dB
PSRR
Power supply rejection ratio
50
25
40
20
100
25
15
15
10
100
Large-signal voltage gain
RL≥2kΩ, VO=±10V
Over temperature
RL≥600Ω, VO=±10V
Over temperature
VOUT
Output
Out
ut swing
RL≥600Ω
Over temperature
RL≥600Ω, VS=±18V
Over temperature
RL≥2kΩ
Over temperature
±12
±10
±15
±12
±13
±12
±13
±12
±16
±14
±13.5
±12.5
±12
±10
±15
±12
±13
±10
±13
±12
±16
±14
±13.5
±12.5
RIN
Input resistance
30
300
30
300
ISC
Output short circuit current
10
38
10
38
Over temperature
AVOL
13
10
mA
50
50
60
10
100
µV/V
V/mV
V/mV
V/mV
V/mV
50
V
kΩ
60
mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at VS=±15V, TA=25°C Temperature and/or supply voltages must be limited to ensure dissipation rating is
not exceeded.
AC ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified.
SYMBOL
ROUT
PARAMETER
Output resistance
Overshoot
AV
Gain
GBW
Gain bandwidth product
SR
Slew rate
Power bandwidth
1997 Sept 29
TEST CONDITIONS
NE/SA/SE5532/5532A
Min
Typ
Max
UNIT
AV=30dB Closed-loop
f=10kHz, RL=600Ω
0.3
Ω
Voltage-follower
VIN=100mVP-P
CL=100pF, RL=600Ω
10
%
f=10kHz
2.2
V/mV
CL=100pF, RL=600Ω
10
MHz
9
V/µs
140
100
kHz
kHz
VOUT=±10V
VOUT=±14V, RL=600Ω,
VCC=±18V
4
Philips Semiconductors
Product specification
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
ELECTRICAL CHARACTERISTICS
TA=25°C VS=±15V, unless otherwise specified.
SYMBOL
PARAMETER
NE/SE5532
TEST CONDITIONS
Min
Typ
NE/SA/SE5532A
Max
Min
Typ
Max
12
6
UNIT
VNOISE
Input noise voltage
fO=30Hz
fO=1kHz
8
5
8
5
nV/√Hz
nV/√Hz
INOISE
Input noise current
fO=30Hz
fO=1kHz
2.7
0.7
2.7
0.7
pA/√Hz
pA/√Hz
Channel separation
f=1kHz, RS=5kΩ
110
110
dB
TYPICAL PERFORMANCE CHARACTERISTICS
Closed-Loop Frequency
Response
Open-Loop Frequency
Response
Large-Signal Frequency
Response
60
120
40
TYPICAL VALUES
TYPICAL VALUES
VS = +15V
TYPICAL VALUES
RF = 10kΩ; RE = 100Ω
40
GAIN (dB)
GAIN (dB)
80
40
30
RF = 9kΩ; RE = 1kΩ
(V)
Vo(p-p)
20
RF = 1kΩ; RE = ∞
0
10
0
-40
20
0
102 103 104 105 106 107
-20
10 102 103 104 105 106 107
103
104
105
106
f (Hz)
107
108
f (Hz)
f (Hz)
Output Short-Circuit Current
Input Commom-Mode
Voltage Range
Input Bias Current
80
1,4
30
VS = +15V
VS = +15V
60
TYPICAL VALUES
1,2
20
IO
40
(mA)
II
(mA)
TYP
0,8
VIN (V)
10
20
0,4
0
-55 -25
0
0
25
50
75 100 +125
-55 -25
0
25
TA (oC)
50
75 100 +125
TA (oC)
Supply Current
0
0
10
20
Vp; -VN (V)
Input Noise Voltage Density
6
10–2
IO = 0
10
TYP
4
TYP
IP
IN
(nV Hz)
1
(mA)
2
10–1
10–2
0
0
10
10
102
103
104
f (Hz)
20
SL00334
Vp; -VN (V)
Figure 3. Typical Performance Characteristics
1997 Sept 29
5
Philips Semiconductors
Product specification
Internally-compensated dual low noise
operational amplifier
NE/SA/SE5532/5532A
TEST CIRCUITS
+
V+
5532 (1/2)
RS
25Ω
5532
–
VOUT
–
+
VIN
RF
1k
100pF
V–
VI
RE
100pF
600Ω
800Ω
Voltage-Follower
Closed-Loop Frequency Response
SL00335
Figure 4. Test Circuits
1997 Sept 29
6
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational
amplifier
DIP8: plastic dual in-line package; 8 leads (300 mil)
1997 Sept 29
NE/SA/SE5532/5532A
SOT97-1
7
1997 Sept 29
853–0580A 006688
8
SEATING
PLANE
–T–
–D–
PIN # 1
0.023 (0.58)
0.015 (0.38)
0.070 (1.78)
0.050 (1.27)
0.408 (10.36)
0.376 (9.55)
T
E D
0.010 (0.254)
0.165 (4.19)
0.125 (3.18)
0.200 (5.08)
0.165 (4.19)
0.100 (2.54) BSC
0.303 (7.70)
0.245 (6.22)
0.055 (1.40)
0.030 (0.76)
0.015 (0.38)
0.010 (0.25)
0.035 (0.89)
0.020 (0.51)
0.175 (4.45)
0.145 (3.68)
Internally-compensated dual low noise operational
amplifier
0.395 (10.03)
0.300 (7.62)
BSC
0.300 (7.62)
(NOTE 4)
0.320 (8.13)
0.290 (7.37)
(NOTE 4)
5. Pin numbers start with Pin #1 and continue
counterclockwise to Pin #8 when viewed
from the top.
2. Dimension and tolerancing per ANSI Y14. 5M-1982.
3. “T”, “D”, and “E” are reference datums on the body
and include allowance for glass overrun and meniscus
on the seal line, and lid to base mismatch.
4. These dimensions measured with the leads
constrained to be perpendicular to plane T.
NOTES:
1. Controlling dimension: Inches. Millimeters are
shown in parentheses.
0580A
–E–
0.055 (1.40)
0.030 (0.76)
Philips Semiconductors
Product specification
NE/SA/SE5532/5532A
8-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational
amplifier
SO8: plastic small outline package; 8 leads; body width 3.9mm
1997 Sept 29
9
NE/SA/SE5532/5532A
SOT96-1
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational
amplifier
SO16: plastic small outline package; 16 leads; body width 7.5 mm
1997 Sept 29
10
NE/SA/SE5532/5532A
SOT162-1
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational
amplifier
DIP16: plastic dual in-line package; 16 leads (300 mil)
1997 Sept 29
11
NE/SA/SE5532/5532A
SOT38-4
Philips Semiconductors
Product specification
Internally-compensated dual low noise operational
amplifier
NE/SA/SE5532/5532A
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
 Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
print code
Document order number:
1997 Sept 29
12
Date of release: 04–96
9397 750 01699