PHILIPS PMBS3904

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBS3904
NPN general purpose transistor
Product specification
Supersedes data of 1997 May 20
1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
3
3
NPN transistor in a plastic SOT23 package.
PNP complement: PMBS3906.
1
MARKING
1
MARKING CODE(1)
TYPE NUMBER
∗O4
PMBS3904
2
2
Top view
MAM255
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
Ptot
total power dissipation
Tstg
−
200
mA
−
250
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 Apr 22
Tamb ≤ 25 °C
2
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 30 V
−
50
nA
emitter cut-off current
IC = 0; VEB = 5 V
−
50
nA
DC current gain
VCE = 1 V; note 1; (see Fig.2)
40
−
ICBO
collector cut-off current
IEBO
hFE
IC = 0.1 mA
IC = 1 mA
70
−
IC = 10 mA
100
300
IC = 50 mA
60
−
IC = 100 mA
30
−
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
−
200
mV
IC = 50 mA; IB = 5 mA
−
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA
−
950
mV
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
4
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
12
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 180
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
5
dB
VCEsat
−
Switching times (between 10% and 90% levels); (see Fig.3)
−
110
ns
−
50
ns
−
60
ns
turn-off time
−
1200
ns
storage time
−
1000
ns
fall time
−
200
ns
ton
turn-on time
td
delay time
tr
rise time
toff
ts
tf
ICon = 10 mA; IBon = 1 mA;
IBoff = − 1 mA; VCC = 3 V;
VBB = −1.9 V
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 22
3
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
MBH723
250
handbook, full pagewidth
hFE
200
VCE = 5 V
150
100
50
0
10−2
10−1
1
102
10
Fig.2 DC current gain; typical values.
VBB
ndbook, full pagewidth
VCC
RB
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 22
4
oscilloscope
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Apr 22
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
6
Philips Semiconductors
Product specification
NPN general purpose transistor
PMBS3904
NOTES
1999 Apr 22
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/04/pp8
Date of release: 1999 Apr 22
Document order number:
9397 750 05714