LT5558 600MHz to 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Direct Conversion from Baseband to RF High OIP3: + 22.4dBm at 900MHz Low Output Noise Floor at 20MHz Offset: No RF: –158dBm/Hz POUT = 4dBm: –152.7dBm/Hz Low Carrier Leakage: –43.7dBm at 900MHz High Image Rejection: –49dBc at 900MHz 3 Channel CDMA2000 ACPR: –70.4dBc at 900MHz Integrated LO Buffer and LO Quadrature Phase Generator 50Ω AC-Coupled Single-ended LO and RF Ports High Impedance Interface to Baseband Inputs with 2.1V Common Mode Voltage 16-Lead QFN 4mm × 4mm Package The LT®5558 is a direct I/Q modulator designed for high performance wireless applications, including wireless infrastructure. It allows direct modulation of an RF signal using differential baseband I and Q signals. It supports GSM, EDGE, CDMA, CDMA2000, and other systems. It may also be configured as an image reject upconverting mixer, by applying 90° phase-shifted signals to the I and Q inputs. The high impedance I/Q baseband inputs consist of voltage-to-current converters that in turn drive doublebalanced mixers. The outputs of these mixers are summed and applied to an on-chip RF transformer, which converts the differential mixer signals to a 50Ω single-ended output. The balanced I and Q baseband input ports are intended for DC coupling from a source with a common-mode voltage level of about 2.1V. The LO path consists of an LO buffer with single-ended input, and precision quadrature generators which produce the LO drive for the mixers. The supply voltage range is 4.5V to 5.25V. APPLICATIONS ■ ■ ■ ■ ■ RFID Single-Sideband Transmitters Infrastructure TX for Cellular and ISM Bands Image Reject Up-Converters for Cellular Bands Low-Noise Variable Phase-Shifter for 600MHz to 1100MHz Local Oscillator Signals Microwave Links , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. TYPICAL APPLICATION 600MHz to 1100MHz Direct Conversion Transmitter Application 5V 2 x 100nF VCC 8, 13 LT5558 RF = 600MHz TO 1100MHz I-CH 11 O° 1 EN 90° ∫ 7 QDAC 5 BALUN Q-CH PA –50 ACPR, ALTCPR (dBc) 16 V-1 –110 DOWNLINK TEST MODEL 64 DPCH –120 3-CH ACPR 3-CH ALTCPR –130 –60 1-CH ACPR –140 –70 1-CH NOISE V-1 –80 1-CH ALTCPR –150 3-CH NOISE BASEBAND GENERATOR –90 –30 2, 4, 6, 9, 10, 12, 15, 17 3 5558 TA01 –20 –15 –10 –5 0 –25 RF OUTPUT POWER PER CARRIER (dBm) NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) ∫ –40 14 IDAC CDMA2000 ACPR, AltCPR and Noise vs RF Output Power at 900MHz for 1 and 3 Carriers –160 5558 TA01b VCO/SYNTHESIZER 5558fa 1 LT5558 ABSOLUTE MAXIMUM RATINGS PACKAGE/ORDER INFORMATION (Note 1) ORDER PART NUMBER LT5558EUF VCC BBPI BBMI GND TOP VIEW Supply Voltage ........................................................5.5V Common-Mode Level of BBPI, BBMI and BBPQ, BBMQ .......................................................2.5V Voltage on any Pin Not to Exceed....................–500mV to (VCC + 500mV) Operating Ambient Temperature (Note 2) ............................................... –40°C to 85°C Storage Temperature Range................... –65°C to 125°C 16 15 14 13 EN 1 12 GND GND 2 11 RF LO 3 10 GND GND 4 6 7 8 BBMQ GND BBPQ VCC 9 5 GND UF PART MARKING 5558 UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS fRF RF Frequency Range –3 dB Bandwidth –1 dB Bandwidth S22, ON RF Output Return Loss EN = High (Note 6) –15.8 dB S22, OFF RF Output Return Loss EN = Low (Note 6) –13.3 dB NFloor RF Output Noise Floor No Input Signal (Note 8) PRF = 4dBm (Note 9) PRF = 4dBm (Note 10) –158 –152.7 –152.3 dBm/Hz dBm/Hz dBm/Hz GP Conversion Power Gain POUT/PIN,I&Q 9.7 GV Conversion Voltage Gain 20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q) –5.1 dB POUT Absolute Output Power 1VP-P DIFF CW Signal, I and Q –1.1 dBm G3LO vs LO 3 • LO Conversion Gain Difference (Note 17) –26.5 dB OP1dB Output 1dB Compression (Note 7) 7.8 dBm OIP2 Output 2nd Order Intercept (Notes 13, 14) 65 dBm OIP3 Output 3rd Order Intercept (Notes 13, 15) 22.4 dBm IR Image Rejection (Note 16) –49 dBc LOFT Carrier Leakage EN = High, PLO = 0dBm (Note 16) –43.7 dBm (LO Feedthrough) EN = Low, PLO = 0dBm (Note 16) –60 dBm EVM GSM Error Vector Magnitude PRF = 2dBm 0.6 % RF Output (RF) 600 to 1100 680 to 960 MHz MHz dB LO Input (LO) fLO LO Frequency Range PLO LO Input Power 600 to 1100 –10 0 MHz 5 dBm 5558fa 2 LT5558 ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3) SYMBOL PARAMETER CONDITIONS S11, ON LO Input Return Loss EN = High (Note 6) MIN –10.6 TYP MAX UNITS dB S11, OFF LO Input Return Loss EN = Low (Note 6) –2.5 dB NFLO LO Input Referred Noise Figure (Note 5) at 900MHz 14.6 dB GLO LO to RF Small-Signal Gain (Note 5) at 900MHz 16.4 dB IIP3LO LO Input 3rd Order Intercept (Note 5) at 900MHz –3.3 dBm Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ) BWBB Baseband Bandwidth –3dB Bandwidth 400 MHz VCMBB DC Common-mode Voltage (Note 4) 2.1 V RIN, DIFF Differential Input Resistance Between BBPI and BBMI (or BBPQ and BBMQ) RIN, CM Common Mode Input Resistance (Note 20) 3 kΩ 100 Ω ICM, COMP Common Mode Compliance Current range (Notes 18, 20) –820 to 440 μA PLO-BB Carrier Feedthrough on BB POUT = 0 (Note 4) –46 dBm IP1dB Input 1dB compression point Differential Peak-to-Peak (Notes 7, 19) 3.4 VP-P,DIFF ΔGI/Q I/Q Absolute Gain Imbalance 0.05 dB ΔϕI/Q I/Q Absolute Phase Imbalance 0.2 Deg Power Supply (VCC) VCC Supply Voltage 4.5 ICC(ON) Supply Current EN = High 5 5.25 V 108 135 mA 50 μA ICC(OFF) Supply Current, Sleep mode EN = 0V 0.1 tON Turn-On Time EN = Low to High (Note 11) 0.3 μs tOFF Turn-Off Time EN = High to Low (Note 12) 1.1 μs 230 V μA Enable (EN), Low = Off, High = On Enable Shutdown Input High Voltage Input High Current EN = High EN = 5V Input Low Voltage EN = Low Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: Tests are performed as shown in the configuration of Figure 7. Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ. Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC. Note 6: Maximum value within –1dB bandwidth. Note 7: An external coupling capacitor is used in the RF output line. Note 8: At 20MHz offset from the LO signal frequency. Note 9: At 20MHz offset from the CW signal frequency. Note 10: At 5MHz offset from the CW signal frequency. Note 11: RF power is within 10% of final value. Note 12: RF power is at least 30dB lower than in the ON state. 1 0.5 V Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set in such a way that the two resulting RF tones are –10dBm each. Note 14: IM2 measured at LO frequency + 4.1MHz Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency + 2.2MHz. Note 16: Amplitude average of the characterization data set without image or LO feedthrough nulling (unadjusted). Note 17: The difference in conversion gain between the spurious signal at f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO + BB for BB = 2MHz and LO = 900MHz. Note 18: Common mode current range where the common mode (CM) feedback loop biases the part properly. The common mode current is the sum of the current flowing into the BBPI (or BBPQ) pin and the current flowing into the BBMI (or BBMQ) pin. Note 19: The input voltage corresponding to the output P1dB. Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted together). 5558fa 3 LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF Output Power vs LO Frequency at 1VP-P Differential Voltage Gain vs LO Frequency Supply Current vs Supply Voltage Baseband Drive 120 85°C 110 25°C 100 –40°C 2 –2 0 –4 –2 –6 –4 –6 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –8 –10 90 4.5 –12 550 5.25 4.75 5 SUPPLY VOLTAGE (V) VOLTAGE GAIN (dB) RF OUTPUT POWER (dBm) 650 750 950 1050 1150 1250 LO FREQUENCY (MHz) 26 8 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 650 750 OP1dB (dBm) OIP2 (dBm) OIP3 (dBm) 10 65 12 550 60 55 45 550 850 950 1050 1150 1250 LO FREQUENCY (MHz) 650 750 950 1050 1150 1250 LO FREQUENCY (MHz) 2 • LO LEAKAGE (dBm) LO FEEDTHROUGH (dBm) –48 550 850 950 1050 1150 1250 5558 G06 3 • LO Leakage to RF Output vs 3 • LO Frequency –40 –46 650 750 LO FREQUENCY (MHz) 2 • LO Leakage to RF Output vs 2 • LO Frequency –40 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –2 550 850 5558 G05 LO Feedthrough to RF Output vs LO Frequency –44 4 0 5558 G04 –42 6 2 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 50 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 950 1050 1150 1250 Output 1dB Compression vs LO Frequency fIM2 = fBB, 1 + fBB, 2 + fLO fBB, 1 = 2MHz 70 fBB, 2 = 2.1MHz 22 14 850 5558 G03 75 fBB, 1 = 2MHz fBB, 2 = 2.1MHz 18 650 750 LO FREQUENCY (MHz) Output IP2 vs LO Frequency 20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –12 5558 G02 Output IP3 vs LO Frequency 16 –10 –16 550 850 5558 G01 24 –8 –14 –45 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –45 –50 –55 –50 3 • LO LEAKAGE (dBm) SUPPLY CURRENT (mA) 130 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –55 –60 –65 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) 5558 G07 –60 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2 • LO FREQUENCY (GHz) 2.5 5558 G08 –70 1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75 3 • LO FREQUENCY (GHz) 5558 G09 5558fa 4 LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Noise Floor vs RF Frequency –157 –30 fLO = 900MHz (FIXED) NO BASEBAND SIGNAL 0 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –35 –159 –160 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –162 550 650 750 850 –40 –45 –55 550 950 1050 1150 1250 LO PORT, EN = HIGH, PLO = –10dBm 650 750 850 –40 550 950 1050 1150 1250 850 950 1050 1150 1250 5558 G25 Voltage Gain vs LO Power 950 1050 1150 1250 –2 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 3 2 –4 –6 VOLTAGE GAIN (dB) ABSOLUTE I/Q PHASE IMBALANCE (DEG) 4 0.1 650 750 5558 G10 Absolute I/Q Phase Imbalance vs LO Frequency 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C RF PORT, EN = HIGH, NO LO FREQUENCY (MHz) LO FREQUENCY (MHz) 0.2 850 RF PORT, EN = LOW –30 Absolute I/Q Gain Imbalance vs LO Frequency 650 750 –20 –50 5558 G24 0 550 LO PORT, EN = HIGH, PLO = 0dBm –10 RF PORT, EN = HIGH, PLO = 0dBm RF FREQUENCY (MHz) ABSOLUTE I/Q GAIN IMBALANCE (dB) LO PORT, EN = LOW S11 (dB) IMAGE REJECTION (dBc) NOISE FLOOR (dBm/Hz) –158 –161 LO and RF Port Return Loss vs RF Frequency Image Rejection vs LO Frequency –8 –10 –12 –14 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 1 –16 0 550 –20 –20 –18 LO FREQUENCY (MHz) 650 750 850 950 1050 1150 1250 LO FREQUENCY (MHz) –16 –12 –8 –4 0 4 5558 G11 5558 G12 Output IP3 vs LO Power 5558 G13 LO Feedthrough vs LO Power 24 8 LO INPUT POWER (dBm) Image Rejection vs LO Power –40 –35 18 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C 16 14 –42 –44 –46 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –48 12 10 –20 fBB, 1 = 2MHz fBB, 2 = 2.1MHz –16 –12 –8 –4 0 4 8 LO INPUT POWER (dBm) –50 –20 –16 –12 –8 –4 0 4 8 LO INPUT POWER (dBm) 5558 G14 IMAGE REJECTION (dBc) OIP3 (dBm) 20 LO FEEDTHROUGH (dBm) 22 –40 –45 –50 –55 –20 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –16 –12 –8 –4 0 4 8 LO INPUT POWER (dBm) 5558 G15 5558 G16 5558fa 5 LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Temperature RF CW Output Power, HD2 and HD3 vs CW Baseband Voltage and Supply Voltage –10 10 –20 0 –20 0 HD3 –30 –50 HD2 –40 –60 –40°C 25°C 85°C –70 –80 0 1 2 HD3 HD2 –60 –80 5558 G17 0 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 5558 G20 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) –45 0 5558 G18 1 2 3 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) 5558 G19 RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Supply Voltage 10 10 0 –10 0 RF –20 fBBI = 2MHz, 2.1MHz, 0° –30 fBBQ = 2MHz, 2.1MHz, 90° –40 –50 –60 –70 –60 –40 –50 3 RF Two-Tone Power (Each Tone), IM2 and IM3 vs Baseband Voltage and Temperature PTONE (dBm) IM2, IM3, (dBc) –55 2 –35 –50 –60 1 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB –40 –50 4.5V 5V 5.5V 0 Image Rejection vs CW Baseband Voltage –45 –40 –60 HD2 = MAX POWER AT fLO + 2 • fBB OR fLO – 2 • fBB HD3 = MAX POWER AT fLO + 3 • fBB OR fLO – 3 • fBB 5V, –40°C 5V, 25°C 5V, 85°C 4.5V, 25°C 5.5V, 25°C –30 –50 –70 4 5 I AND Q BASEBAND VOLTAGE (VP-P, DIFF) –20 –40 –50 3 –10 IM3 IM2 –40°C 25°C 85°C –80 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE) 5558 G21 IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz PTONE (dBm) IM2, IM3, (dBc) HD2, HD3 (dBc) –20 –40 RF –30 HD2, HD3 (dBc) –10 RF CW OUTPUT POWER (dBm) RF –30 LO FEEDTHROUGH (dBm) 10 RF CW OUTPUT POWER (dBm) –10 –30 IMAGE REJECTIOIN (dBc) LO Feedthrough to RF Output vs CW Baseband Voltage RF –10 –20 fBBI = 2MHz, 2.1MHz, 0° fBBQ = 2MHz, 2.1MHz, 90° –30 –40 –50 –60 –70 IM3 IM2 4.5V 5V 5.5V –80 1 10 0.1 I AND Q BASEBAND VOLTAGE (VP-P, DIFF, EACH TONE) 5558 G22 IM2 = POWER AT fLO + 4.1MHz IM3 = MAX POWER AT fLO + 1.9MHz OR fLO + 2.2MHz 5558fa 6 LT5558 TYPICAL PERFORMANCE CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper side-band selection). PRF(OUT) = –10dBm (–10dBm/tone for 2-tone measurements), unless otherwise noted. (Note 3) Gain Distribution 30 25 VBB = 400mVP-P –40°C 25°C 85°C LO Leakage Distribution Noise Floor Distribution 20 40 –40°C 25°C 85°C 30 15 10 PERCENTAGE (%) PERCENTAGE (%) PERCENTAGE (%) 15 20 VBB = 400mVP-P –40°C 25°C 85°C 10 5 20 10 5 0 8 –7.5 –7 –6.5 –6 –5.5 –5 –4.5 –4 –3.5 GAIN (dB) 0 0 –158 –157.5 –157 NOISE FLOOR (dBm/Hz) –40°C 25°C 85°C 10 5 5 –40 LO FEEDTHROUGH (dBm), IR (dBc) PERCENTAGE (%) 15 –46 –44 –42 –40 LO LEAKAGE (dBm) –38 –36 5558 G28 LO Feedthrough and Image Rejection vs Temperature After Calibration at 25°C Image Rejection Distribution VBB = 400mVP-P –48 5558 G27 5558 G26 20 –50 –50 CALIBRATED WITH PRF = –10dBm fBBI = 2MHz, 0° fBBQ = 2MHz, 90° + ϕCAL LO FEEDTHROUGH –60 –70 –80 IMAGE REJECTION 0 <–66 –62 –58 –54 –50 –46 IMAGE REJECTION (dBc) –42 5558 G29 –90 –40 –20 0 20 40 TEMPERATURE (°C) 60 80 5558 G30 PIN FUNCTIONS EN (Pin 1): Enable Input. When the Enable pin voltage is higher than 1V, the IC is turned on. When the Enable voltage is less than 0.5V or if the pin is disconnected, the IC is turned off. The voltage on the Enable pin should never exceed VCC by more than 0.5V, in order to avoid possible damage to the chip. GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9, 15 and the Exposed Pad, Pin 17, are connected to each other internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal. Pins 10 and 12 are connected to each other internally and function as the ground return for the on-chip RF balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the Exposed Pad, Pin 17, should be connected to the printed circuit board ground plane. 5558fa 7 LT5558 PIN FUNCTIONS 0.1μF capacitors for decoupling to ground on each of these pins. LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50Ω input impedance at RF frequencies. Externally applied DC voltage should be within the range –0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. RF (Pin 11): RF Output. The RF output is an AC-coupled single-ended output with approximately 50Ω output impedance at RF frequencies. Externally applied DC voltage should be within the range –0.5V to (VCC + 0.5V) in order to avoid turning on ESD protection diodes. BBPQ, BBMQ (Pins 7, 5): Baseband Inputs for the Q-channel. The differential input impedance is 3kΩ. These pins are internally biased at about 2.1V. Applied common mode voltage must stay below 2.5V. BBPI, BBMI (Pins 14, 16): Baseband Inputs for the I-channel. The differential input impedance is 3kΩ. These pins are internally biased at about 2.1V. Applied common mode voltage must stay below 2.5V. VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected to each other internally. It is recommended to use BLOCK DIAGRAM VCC 8 13 LT5558 BBPI 14 V-I BBMI 16 0° 11 RF 90° BALUN BBPQ 7 BBMQ 5 1 V-I 2 4 6 9 GND 3 LO 10 12 15 GND EN 17 5558 BD APPLICATIONS INFORMATION The LT5558 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF output signal combiner/balun, an LO quadrature phase generator and LO buffers. External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ, BBMQ. These voltage signals are converted to currents and translated to RF frequency by means of double-balanced up-converting mixers. The mixer outputs are combined in an RF output balun, which also transforms the output impedance to 50Ω. The center frequency of the resulting RF signal is equal to the LO signal frequency. The LO input drives a phase shifter which splits the LO signal into in-phase and quadrature LO signals. These LO signals are then applied to on-chip buffers which drive the upconversion mixers. Both the LO input and RF output are single-ended, 50Ω-matched and AC coupled. Baseband Interface The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present a differential input impedance of about 3kΩ. At each of the four baseband inputs, a low-pass filter using 200Ω and 1.8pF to ground is incorporated (see Figure 1), which limits the baseband –1dB bandwidth to approximately 250MHz. The common-mode voltage is about 2.1V and is slightly temperature dependent. At TA = -40°C, the common-mode voltage is about 2.28V and at TA = 85°C it is about 2.01V. 5558fa 8 LT5558 APPLICATIONS INFORMATION C RF VCC = 5V VCC LT5558 4.5V TO 5.25V C5 C1 14 FROM Q LOPI BB SOURCE VCC RF EN BBPI BBPQ C3 7 2.1VDC LT5558 C2 2, 4, 6, 9, 10, 12, 15, 17 200 VREF = 0.5V 1.3k 2.1VDC 1 C4 BB SOURCE 16 5 BBMI BBMQ 2.1VDC 2.1VDC LO GND LOMI BBPI RF OUT 8, 13 11 BALUN 3 5558 F03 1.8P Figure 3. AC-Coupled Baseband Interface CM 1.3k 1.8P 200 BBMI GND 5558 F01 Figure 1. Simplifed Circuit Schematic of the LT5558 (Only I-Half is Drawn) If the I/Q signals are DC-coupled to the LT5558, it is important that the applied common-mode voltage level of the I and Q inputs is about 2.1V in order to properly bias the LT5558. Some I/Q generators allow setting the common-mode voltage independently. In this case, the common-mode voltage of those generators must be set to 1.05V to match the LT5558 internal bias where the internal DC voltage of the signal generators is set to 2.1V due to the source-load voltage division (See Figure 2). The LT5558 baseband inputs should be driven differentially, otherwise, the even-order distortion products will degrade the overall linearity severely. Typically, a DAC will be the signal source for the LT5558. A pulse-shaping filter should be placed between the DAC outputs and the LT5558’s baseband inputs. An AC-coupled baseband interface with the LT5558 is drawn in Figure 3. Capacitors C1 to C4 will introduce a GENERATOR 50Ω 1.05VCC GENERATOR 50Ω 2.1VDC low-frequency high-pass corner together with the LT5558’s differential input impedance of 3kΩ. Usually, capacitors C1 to C4 will be chosen equal and in such a way that the –3dB corner frequency f–3dB = 1/(π • RIN,DIFF • C1) is much lower than the lowest baseband frequency. DC coupling between the DAC outputs and the LT5558 baseband inputs is recommended, because AC coupling will introduce a low-frequency time constant that may affect the signal integrity. Active level shifters may be required to adapt the common mode level of the DAC outputs to the common mode input voltage of the LT5558. Such circuits may, however, suffer degraded LO leakage performance as small DC offsets and variations over temperature accumulate. A better scheme is shown in Figure 16, where feedback is used to track out these variations. LO Section The internal LO input amplifier performs single-ended to differential conversion of the LO input signal. Figure 4 shows the equivalent circuit schematic of the LO input. The internal, differential LO signal is split into in-phase and quadrature (90° phase shifted) signals that drive LO buffer sections. These buffers drive the double balanced I and Q mixers. The phase relationship between VCC LT5558 1.5kΩ 20pF 50Ω + – 2.1VDC + – 2.1VDC 2.1VDC LO INPUT + – ≈ 50Ω 5558 F02 5558 F04 Figure 2. DC Voltage Levels for a Generator Programmed at 1.05VDC for a 50Ω Load and the LT5558 as a Load Figure 4. Equivalent Circuit Schematic of the LO Input 5558fa 9 LT5558 APPLICATIONS INFORMATION the LO input and the internal in-phase LO and quadrature LO signals is fixed, and is independent of start-up conditions. The phase shifters are designed to deliver accurate quadrature signals for an LO frequency near 900MHz. For frequencies significantly below 750MHz or above 1.1GHz, the quadrature accuracy will diminish, causing the image rejection to degrade. The LO pin input impedance is about 50Ω and the recommended LO input power window is –2dBm to + 2dBm. For PLO < –2dBm, the gain, OIP2, OIP3, dynamic-range (in dBc/Hz) and image rejection will degrade, especially at TA = 85°C. Harmonics present on the LO signal can degrade the image rejection, because they introduce a small excess phase shift in the internal phase splitter. For the second (at 1.8GHz) and third harmonics (at 2.7GHz) at –20dBc level, the introduced signal at the image frequency is about –61dBc or lower, corresponding to an excess phase shift much less than 1 degree. For the second and third harmonics at –10dBc, still the introduced signal at the image frequency is about –51dBc. Higher harmonics than the third will have less impact. The LO return loss typically will be better than 10dB over the 750MHz to 1GHz range. Table 1 shows the LO port input impedance vs. frequency. The return loss S11 on the LO port can be improved at lower frequencies by adding a shunt capacitor. Table 1. LO Port Input Impedance vs Frequency for EN = High and PLO = 0dBm FREQUENCY (MHz) S11 INPUT IMPEDANCE (Ω) 500 50.5 + j10.3 0.101 81.3 600 63.8 + j4.6 0.127 16.0 700 70.7 – j6.9 0.180 –15.2 800 70.7 – j20.3 0.237 –34.9 900 63.9 – j30.6 0.285 –50.5 1000 56.7 – j32.2 0.295 –61.4 1100 52.1 – j31.3 0.295 –69.1 1200 46.3 – j32.0 0.318 –78.0 MAG ANGLE Table 2. LO Port Input Impedance vs Frequency for EN = Low and PLO = 0dBm FREQUENCY (MHz) INPUT IMPEDANCE (Ω) MAG S11 ANGLE 500 37.3 + j43.4 0.464 79.7 600 72.1 + j74.8 0.545 42.1 700 184.7 + j77.8 0.630 11.7 800 203.6 – j120.8 0.696 –12.7 900 75.9 – j131.5 0.737 –32.6 1000 36.7 – j99.0 0.760 –48.8 1100 23.4 – j77.4 0.768 –62.4 1200 17.8 – j62.8 0.764 –74.3 RF Section After up-conversion, the RF outputs of the I and Q mixers are combined. An on-chip balun performs internal differential to single-ended output conversion, while transforming the output signal impedance to 50Ω. Table 3 shows the RF port output impedance vs frequency. Table 3. RF Port Output Impedance vs Frequency for EN = High and PLO = 0dBm FREQUENCY (MHz) OUTPUT IMPEDANCE (Ω) MAG S22 ANGLE 500 22.8 + j4.9 0.380 165.8 600 30.2 + j11.4 0.283 141.9 700 42.7 + j12.9 0.159 111.8 800 53.7 + j3.0 0.045 37.2 900 52.0 – j10.1 0.101 –73.2 1000 44.8 – j15.2 0.168 –99.7 1100 39.1 – j15.1 0.206 –116.1 1200 35.7 – j13.1 0.224 –128.9 The input impedance of the LO port is different if the part is in shutdown mode. The LO input impedance for EN = Low is given in Table 2. 5558fa 10 LT5558 APPLICATIONS INFORMATION The RF output S22 with no LO power applied is given in Table 4. Table 4. RF Port Output Impedance vs Frequency for EN = High and No LO Power Applied FREQUENCY (MHz)( S22 MAG OUTPUT IMPEDANCE (Ω) ANGLE 500 23.4 + j5.0 0.367 165.5 600 31.7 + j10.7 0.257 142.0 700 44.1 + j9.5 0.118 116.1 800 50.9 – j1.7 0.019 –60.8 900 46.8 – j11.1 0.118 –99.3 1000 40.8 – j13.5 0.178 –115.5 1100 36.6 – j12.6 0.209 –128.1 1200 34.3 – j10.5 0.222 –139.0 For EN = Low the S22 is given in Table 5. To improve S22 for lower frequencies, a series capacitor can be added to the RF output. At higher frequencies, a shunt inductor can improve the S22. Figure 5 shows the equivalent circuit schematic of the RF output. Table 5. RF Port Output Impedance vs Frequency for EN = Low FREQUENCY (MHz) Note that an ESD diode is connected internally from the RF output to the ground. For strong output RF signal levels (higher than 3dBm), this ESD diode can degrade the linearity performance if an external 50Ω termination impedance is connected directly to ground. To prevent this, a coupling capacitor can be inserted in the RF output line. This is strongly recommended during 1dB compression measurements. Enable Interface Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5558 is 1V. To disable (shut down) the chip, the enable voltage must be below 0.5V. If the EN pin is not connected, the chip is disabled. This EN = Low condition is guaranteed by the 75kΩ on-chip pull-down resistor. It is important that the voltage at the EN pin does not exceed VCC by more than 0.5V. If this should occur, the full-chip supply current could be sourced through the EN pin ESD protection diodes, which are not designed for this purpose. Damage to the chip may result. S22 OUTPUT IMPEDANCE (Ω) MAG VCC ANGLE 500 21.8 + j4.8 0.398 166.5 600 28.4 + j11.8 0.311 142.9 700 40.2 + j15.4 0.200 112.9 800 54.3 + j8.3 0.090 58.1 900 56.7 – j7.2 0.092 –43.3 1000 49.2 – j15.8 0.158 –83.8 1100 41.9 – j17.0 0.203 –105.0 1200 37.3 – j15.3 0.225 –120.0 EN 75k 25k 5558 F06 Figure 6. EN Pin Interface Evaluation Board VCC 21pF RF OUTPUT 52Ω 1pF 7nH 5558 F05 Figure 5. Equivalent Circuit Schematic of the RF Output Figure 7 shows the evaluation board schematic. A good ground connection is required for the LT5558’s Exposed Pad. If this is not done properly, the RF performance will degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip overheating. R1 (optional) limits the EN pin current in the event that the EN pin is pulled high while the VCC inputs are low. The application board PCB layouts are shown in Figures 8 and 9. 5558fa 11 LT5558 APPLICATIONS INFORMATION J1 J2 BBIM BBIP VCC R1 100 VCC EN J4 LO IN 16 1 2 3 4 15 14 C2 100nF 13 BBMI GND BBPI VCC EN GND GND RF LT5558 LO GND GND GND GND BBMQ GND BBPQ VCC 5 6 7 12 BBQM RF OUT 10 9 17 8 C1 100nF J5 J3 11 J6 GND BBQP BOARD NUMBER: DC1017A 5558 F07 Figure 7. Evaluation Circuit Schematic Figure 9. Bottom Side of Evaluation Board If the output power is high, the ACPR will be limited by the linearity performance of the part. If the output power is low, the ACPR will be limited by the noise performance of the part. In the middle, an optimum ACPR is obtained. Because of the LT5558’s very high dynamic-range, the test equipment can limit the accuracy of the ACPR measurement. Consult Design Note 375 or the factory for advice on ACPR measurement if needed. The ACPR performance is sensitive to the amplitude mismatch of the BBIP and BBIM (or BBQP and BBQM) inputs. This is because a difference in AC current amplitude will give rise to a difference in amplitude between the even-order harmonic products generated in the internal V-I converter. As a result, they will not cancel out entirely. Therefore, it is important to keep the amplitudes at the BBIP and BBIM (or BBQP and BBQM) inputs as equal as possible. Figure 8. Component Side of Evaluation Board Application Measurements The LT5558 is recommended for base-station applications using various modulation formats. Figure 10 shows a typical application. Figure 11 shows the ACPR performance for CDMA2000 using one and three channel modulation. Figures 12 and 13 illustrate the 1- and 3-channel CDMA2000 measurement. To calculate ACPR, a correction is made for the spectrum analyzer noise floor (Application Note 99). 12 LO feedthrough and image rejection performance may be improved by means of a calibration procedure. LO feedthrough is minimized by adjusting the differential DC offset at the I and the Q baseband inputs. Image rejection can be improved by adjusting the gain and the phase difference between the I and the Q baseband inputs. The LO feedthrough and Image Rejection can also change as a function of the baseband drive level, as depicted in Figure 14. 5558fa LT5558 APPLICATIONS INFORMATION 5V BASEBAND GENERATOR VCC 8, 13 LT5558 14 I-DAC 16 V-I I-CHANNEL 11 0° 1 EN 100nF ×2 RF = 600MHz TO 1100MHz PA 90° 7 Q-DAC 5 Q-CHANNEL BALUN V-I 2, 4, 6, 9, 10, 12, 15, 17 3 VCO/SYNTHESIZER 5558 F10 Figure 10. 600MHz to 1.1GHz Direct Conversion Transmitter Application –120 3-CH ACPR 3-CH ALTCPR –130 –60 1-CH ACPR –140 –70 1-CH NOISE –80 1-CH ALTCPR –150 3-CH NOISE –90 –30 –20 –15 –10 –5 0 –25 RF OUTPUT POWER PER CARRIER (dBm) –30 NOISE FLOOR AT 30MHz OFFSET (dBm/Hz) –50 ACPR, ALTCPR (dBc) –110 DOWNLINK TEST MODEL 64 DPCH –160 DOWNLINK TEST MODEL 64 DPCH –40 POWER IN 30kHz BW (dBm) –40 –50 –60 –70 –80 –90 UNCORRECTED SPECTRUM –100 –110 –120 SPECTRUM ANALYSER NOISE FLOOR CORRECTED SPECTRUM –130 894 896 900 902 898 RF FREQUENCY (MHz) 5558 TA01b Figure 11. ACPR, ALTCPR and Noise for CDMA2000 Modulation –30 POWER IN 30kHz BW (dBm) –40 DOWNLINK TEST MODEL 64 DPCH –50 –60 –70 –80 –90 UNCORRECTED SPECTRUM –100 CORRECTED SPECTRUM –110 –120 SPECTRUM ANALYSER NOISE FLOOR –130 896.25 897.75 899.25 900.75 902.25 903.75 RF FREQUENCY (MHz) 5558 F12 Figure 12. 1-Channel CDMA2000 Spectrum 904 906 5558 F13 Figure 13. 3-Channel CDMA2000 Spectrum Example: RFID Application In Figure 15 the interface between the LTC1565 (U2, U3) and the LT5558 is designed for RFID applications. The LTC1565 is a seventh-order, 650kHz, continuous-time, linear-phase, lowpass filter. The optimum output common-mode level of the LTC1565 is about 2.5V and the optimum input common-mode level of the LT5558 is around 2.1V and is temperature dependent. To adapt the common-mode level of the LTC1565 to the LT5558, a level shift network consisting of R1 to R6 and R11 to R16 is used. The output common-mode level of the LTC1565 can be adjusted by overriding the internally generated voltage on pin 3 of the LTC1565. 5558fa 13 LT5558 APPLICATIONS INFORMATION 10 –40°C PRF, LOFT (dBm), IR (dBc) 0 25°C 85°C PRF –10 –20 LOFT –30 85°C –40 U4’s stability while driving the large supply decoupling capacitors C3 and C4. This corrected common-mode voltage is applied to the common-mode input pins of U2 and U3 (pins 3). This results in a positive feedback loop for the common mode voltage with a loop gain of about -10dB. This technique ensures that the current compliance on the baseband input pins of the LT5558 is not exceeded under supply voltage or temperature extremes, and internal diode voltage shifts or combinations of these. The core current of the LT5558 is thus maintained at its designed level for optimum performance. The recommended common-mode voltage applied to the inputs of the LTC1565 is about 2V. Resistor tolerances are recommended 1% accuracy or better. The total current consumption is about 160mA and the noise floor at 20MHz offset is –147dBm/Hz with 3.7dBm RF output power. For a 2VPP, DIFF baseband input swing, the output power at fLO + fBB is 1.6dBm and the third harmonic at fLO – 3fBB is –48.6dBm. For a 2.6VPP, DIFF input, the output power at fLO + fBB is 3.8dBm and the third harmonic at fLO – 3fBB is –40.5dBm. VCC = 5V EN = HIGH fLO = 900MHz, fBBI = 2MHz, 0° fBBQ = 2MHz, 90° fRF = fBB + fLO PLO = 0dBm –40°C –50 IR –60 –40°C –70 25°C –80 –90 0 1 3 4 5 2 I AND Q BASEBAND VOLTAGE (VP-P,DIFF) 5558 F14 Figure 14. LO Feedthrough and Image Rejection vs Baseband Drive Voltage After Calibration at 25°C The common-mode voltage on the LT5558 is sampled using resistors R7, R8, R17 and R18 and shifted up to about 2.5V using resistor R9. Op amp U4 compensates for the gain loss in the resistor networks and provides a low-ohmic drive to steer the common-mode input pins of U2 and U3. Resistors R20 and R21 improve op amp RF = 3dBm MAX VCC 4.5V to 5.25V R24 3.32k R22 22.1k 4 R20 249Ω R5 3.57k R6 R9 3.57k 88.7k 3 R22 22.1k – 5 +U4 1 LT1797 R16 3.57k 2 R15 3.57k R21 249Ω C1, C2 2 × 0.1µF U2 1 +OUT +IN BB SOURCE 2 –IN 7 LTC1565-31 2.5VDC 3 C3 0.1µF –OUT 8 4 GND V– V+ SHDN R1 499Ω 8, 13 2.1VDC R3 3.01k R7 49.9k R4 3.01k R8 49.9k 5 R2 499Ω 16 2.1VDC 1 U1 LT5558 2.5VDC 6 11 VCC RF EN 14 7 BBPI BBPQ R17 49.9k R13 3.01k R18 49.9k R14 3.01k R11 499Ω 8 7 BBMQ GND LO 5 2.1VDC R12 499Ω U3 +OUT +IN –OUT –IN 1 BB 2 SOURCE LTC1565-31 2.5VDC BBMI 2, 4, 6, 9, 10 12, 15, 17 2.1VDC 6 5 V+ SHDN GND V– 2.5VDC 3 4 C4 0.1µF 5558 F16 3 Figure 15. Baseband Interface Schematic of the LTC1565 with the LT5558 for RFID applications. 5558fa 14 LT5558 PACKAGE DESCRIPTION UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ±0.05 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.75 ± 0.05 R = 0.115 TYP 15 PIN 1 NOTCH R = 0.20 TYP OR 0.35 × 45° CHAMFER 16 0.55 ± 0.20 PIN 1 TOP MARK (NOTE 6) 1 2.15 ± 0.10 (4-SIDES) 2 (UF16) QFN 10-04 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 5558fa Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 15 LT5558 RELATED PARTS PART NUMBER DESCRIPTION Infrastructure LT5511 High Linearity Upconverting Mixer LT5512 DC to 3GHz High Signal Level Downconverting Mixer LT5514 LT5515 LT5516 LT5517 LT5518 LT5519 LT5520 LT5521 LT5522 LT5524 LT5526 Ultralow Distortion, IF Amplifier/ADC Driver with Digitally Controlled Gain 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 40MHz to 900MHz Quadrature Demodulator 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 10MHz to 3700MHz High Linearity Upconverting Mixer 600MHz to 2.7GHz High Signal Level Downconverting Mixer Low Power, Low Distortion ADC Driver with Digitally Programmable Gain High Linearity, Low Power Downconverting Mixer LT5527 400MHz to 3.7GHz High Signal Level Downconverting Mixer LT5528 1.5GHz to 2.4GHz High Linearity Direct Quadrature Modulator LT5568 700MHz to 1050MHz High Linearity Direct Quadrature Modulator LT5572 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver LTC®5505 RF Power Detectors with >40dB Dynamic Range LTC5507 100kHz to 1000MHz RF Power Detector LTC5508 300MHz to 7GHz RF Power Detector LTC5509 300MHz to 3GHz RF Power Detector LTC5530 300MHz to 7GHz Precision RF Power Detector LTC5531 300MHz to 7GHz Precision RF Power Detector LTC5532 300MHz to 7GHz Precision RF Power Detector LT5534 50MHz to 3GHz Loq RF Power Detector with 60dB Dynamic Range LTC5536 Precision 600MHz to 7GHz RF Detector with Fast Comparater LT5537 Wide Dynamic Range Loq RF/IF Detector High Speed ADCs LTC2220-1 12-Bit, 185Msps ADC LTC2249 LTC2255 14-Bit, 80Msps ADC 14-Bit, 125Msps ADC COMMENTS RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC to 3GHz, 17dBm IIP3, Integrated LO Buffer 850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range 20dBm IIP3, Integrated LO Quadrature Generator 21.5dBm IIP3, Integrated LO Quadrature Generator 21dBm IIP3, Integrated LO Quadrature Generator 22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended LO and RF Ports, 4-Ch W-CDMA ACPR = –64dBc at 2.14GHz 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching, Single-Ended LO and RF Ports Operation 24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO Port Operation 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports 450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control 3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA, –65dBm LO-RF Leakage IIP3 = 23.5dBm and NF = 12.5dB at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA 21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = –66dBc at 2.14GHz 22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz 21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Low Power Consumption, SC70 Package Precision VOUT Offset Control, Shutdown, Adjustable Gain Precision VOUT Offset Control, Shutdown, Adjustable Offset Precision VOUT Offset Control, Adjustable Gain and Offset ±1dB Output Variation over Temperature, 38ns Response Time 25ns Response Time, Comparator Reference Input, Latch Enable Input, –26dBm to +12dBm Input Range Low Frequency to 800MHz, 83dB Dynamic Range, 2.7V to 5.25V Supply Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz Full Power BW Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz Full Power BW 5558fa 16 Linear Technology Corporation LT 0706 REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2006