PHILIPS PMBT2907A

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT2907; PMBT2907A
PNP switching transistors
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
NXP Semiconductors
Product data sheet
PMBT2907;
PMBT2907A
PNP switching transistors
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
handbook, halfpage
3
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PMBT2907
*2B
PMBT2907A
*2F
2
1
Top view
2
MAM256
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMBT2907
−
plastic surface mounted package; 3 leads
SOT23
PMBT2907A
−
plastic surface mounted package; 3 leads
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
−60
V
PMBT2907
−
−40
V
PMBT2907A
−
−60
V
−
−5
V
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 16
3
note 1
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
UNIT
IE = 0; VCB = −50 V
−
−20
nA
PMBT2907A
−
−10
nA
PMBT2907
−
−20
µA
PMBT2907A
−
−10
µA
−
−50
nA
35
−
75
−
PMBT2907
50
−
PMBT2907A
100
−
PMBT2907
75
−
PMBT2907A
100
−
100
300
30
−
IE = 0; VCB = −50 V; Tj = 125 °C
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −0.1 mA; VCE = −10 V
PMBT2907
PMBT2907A
DC current gain
DC current gain
IC = −1 mA; VCE = −10 V
IC = −10 mA; VCE = −10 V
DC current gain
IC = −150 mA; VCE = −10 V
DC current gain
IC = −500 mA; VCE = −10 V
PMBT2907
50
−
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA
−
−400
mV
IC = −500 mA; IB = −50 mA
−
−1.6
V
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA
−
−1.3
V
IC = −500 mA; IB = −50 mA
−
−2.6
V
PMBT2907A
VBEsat
MAX.
PMBT2907
collector-base cut-off current
VCEsat
MIN.
Cc
collector capacitance
IE = Ie = 0; VCB = −10 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = Ic = 0; VEB = −2 V; f = 1 MHz
−
30
pF
fT
transition frequency
IC = −50 mA; VCE = −20 V; f = 100 MHz
200
−
MHz
−
40
ns
−
12
ns
Switching times (between 10% and 90% levels); (see Fig.2)
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
ton
turn-on time
td
delay time
tr
rise time
−
30
ns
toff
turn-off time
−
365
ns
ts
storage time
−
300
ns
tf
fall time
−
65
ns
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
2004 Jan 16
5
oscilloscope
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 16
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
6
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907; PMBT2907A
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 16
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/05/pp8
Date of release: 2004 Jan 16
Document order number:
9397 750 12459