BCP69 20 V, 1 A PNP medium power transistor Rev. 06 — 2 December 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] BCP69 Package NXP JEITA Package configuration SOT223 SC-73 medium power BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] /DG: halogen-free 1.2 Features n n n n High current Three current gain selections 1.4 W total power dissipation Medium power SMD plastic package 1.3 Applications n n n n n Linear voltage regulators High-side switches Supply line switches MOSFET drivers Audio preamplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −20 V IC collector current - - −1 A ICM peak collector current - - −2 A single pulse; tp ≤ 1 ms BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor Table 2. Quick reference data …continued Symbol Parameter Conditions hFE DC current gain VCE = −1 V; IC = −500 mA Min Typ Max BCP69 85 - 375 BCP69-16 BCP69-16/DG 100 - 250 BCP69-16/IN 140 - 230 BCP69-25 160 - 375 Unit 2. Pinning information Table 3. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym028 3. Ordering information Table 4. Ordering information Type number[1] BCP69 BCP69-16 Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCP69-16/DG BCP69-16/IN BCP69-25 [1] /DG: halogen-free BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 2 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 4. Marking Table 5. Marking codes Type number[1] Marking code BCP69 BCP69 BCP69-16 BCP69/16 BCP69-16/DG BCP69-16D BCP69-16/IN 69-16N BCP69-25 BCP69/25 [1] /DG: halogen-free 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −32 V VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector IC collector current ICM peak collector current IBM Ptot - −5 V - −1 A single pulse; tp ≤ 1 ms - −2 A peak base current single pulse; tp ≤ 1 ms - −200 mA total power dissipation Tamb ≤ 25 °C [1] - 0.625 W [2] - 1 W [3] - 1.4 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 3 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor mle311 1.6 (1) Ptot (W) 1.2 (2) 0.8 (3) 0.4 0 −65 −5 55 115 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Typ Max Unit - - 200 K/W [2] - - 125 K/W [3] - - 89 K/W - - 15 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. BCP69_6 Product data sheet Min [1] © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 4 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 006aab402 102 duty cycle = 1 0.75 Rth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 δ= P 0 t1 t2 t t1 t2 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 5 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −25 V; IE = 0 A - - −100 nA VCB = −25 V; IE = 0 A; Tj = 150 °C - - −10 µA VEB = −5 V; IC = 0 A - - −100 nA VCE = −10 V; IC = −5 mA 50 - - VCE = −1 V; IC = −500 mA 85 - 375 VCE = −1 V; IC = −1 A 60 - - BCP69-16 BCP69-16/DG VCE = −1 V; IC = −500 mA 100 - 250 BCP69-16/IN VCE = −1 V; IC = −500 mA 140 - 230 BCP69-25 VCE = −1 V; IC = −500 mA 160 - 375 IEBO emitter-base cut-off current hFE DC current gain BCP69 VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA - - −500 mV VBE base-emitter voltage VCE = −10 V; IC = −5 mA - - −700 mV VCE = −1 V; IC = −1 A - - −1 V Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 28 - pF fT transition frequency VCE = −5 V; IC = −50 mA; f = 100 MHz 40 140 - MHz BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 6 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor mle305 103 hFE 006aab403 −2.4 IC (A) −2.0 IB (mA) = −18.0 −14.4 −1.6 −10.8 −1.2 −16.2 −12.6 −9.0 −7.2 −5.4 −0.8 −3.6 −0.4 102 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 −1 −2 −3 −4 −5 VCE (V) VCE = −1 V Fig 3. −1.8 Tamb = 25 °C BCP69-16: DC current gain as a function of collector current; typical values mle304 −1000 VBE (mV) −800 Fig 4. BCP69-16: Collector current as a function of collector-emitter voltage; typical values mle306 −103 VCEsat (mV) −102 −600 −400 −10 −200 0 −10−1 −1 −10 −102 −1 −10−1 −103 −104 IC (mA) VCE = −1 V Fig 5. −10 −102 −103 −104 IC (mA) IC/IB = 10 BCP69-16: Base-emitter voltage as a function of collector current; typical values Fig 6. BCP69-16: Collector-emitter saturation voltage as a function of collector current; typical values BCP69_6 Product data sheet −1 © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 7 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor mle309 103 006aab404 −2.4 IC (A) IB (mA) = −12.0 −2.0 hFE −10.8 −9.6 −1.6 −7.2 −1.2 −8.4 −6.0 −4.8 −3.6 −0.8 −2.4 −0.4 102 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 −1 −2 −3 −4 −5 VCE (V) VCE = −1 V Fig 7. −1.2 Tamb = 25 °C BCP69-25: DC current gain as a function of collector current; typical values mle304 −1000 VBE (mV) −800 Fig 8. BCP69-25: Collector current as a function of collector-emitter voltage; typical values mle310 −103 VCEsat (mV) −102 −600 −400 −10 −200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −1 V Fig 9. −1 −10−1 −10 −102 −103 −104 IC (mA) IC/IB = 10 BCP69-25: Base-emitter voltage as a function of collector current; typical values Fig 10. BCP69-25: Collector-emitter saturation voltage as a function of collector current; typical values BCP69_6 Product data sheet −1 © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 8 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 8. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 11. Package outline SOT223 (SC-73) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] BCP69 Package SOT223 Description 8 mm pitch, 12 mm tape and reel Packing quantity 1000 4000 -115 -135 BCP69-16 BCP69-16/DG BCP69-16/IN BCP69-25 [1] For further information and the availability of packing methods, see Section 13. [2] /DG: halogen-free BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 9 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 12. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 13. Wave soldering footprint SOT223 (SC-73) BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 10 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCP69_6 20081202 Product data sheet - BCP69_5 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Table 1 “Product overview”: enhanced Table 4 “Ordering information”: enhanced Figure 2, 4 and 8: updated Figure 11: superseded by minimized package outline drawing Section 9 “Packing information”: added Section 10 “Soldering”: enhanced Section 12 “Legal information”: updated BCP69_5 20031125 Product specification - BCP69_4 BCP69_4 20021115 Product specification - BCP69_3 BCP69_3 19990408 Product specification - BCP69_CNV_2 BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 11 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCP69_6 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 06 — 2 December 2008 12 of 13 BCP69 NXP Semiconductors 20 V, 1 A PNP medium power transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 December 2008 Document identifier: BCP69_6