RH1011 Voltage Comparator U W W W U DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM111. Although pin compatible with the LM111, it offers four times lower bias current, six times lower offset voltage and five times higher voltage gain. Supply Voltage (Pin 8 to Pin 4) ............................... 36V Output to Negative Supply (Pin 7 to Pin 4) ............. 35V Ground to Negative Supply (Pin 1 to Pin 4) ............ 30V Differential Input Voltage ....................................... ±35V Voltage at STROBE Pin (Pin 6 to Pin 8) .................... 5V Input Voltage (Note 1) ....................... Equal to Supplies Output Short-Circuit Duration ............................. 10 sec Operating Temperature Range (Note 2) ........................................... – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. , LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. U U BUR -I CIRCUIT 15V 15V 1.3k 50k 2 8 + 7 200Ω 50k 3 – 100k 50k 5 2V 3 8 – 7 OR 2 1 1 + 4 4 –15V –15V 604Ω RH1011 BI W PACKAGE I FOR ATIO U U TOP VIEW V+ 8 7 OUTPUT GND 1 + +INPUT 2 –INPUT 3 6 – TOP VIEW TOP VIEW BALANCE/ STROBE 5 BALANCE GND 1 8 V+ +INPUT 2 7 OUTPUT BALANCE/ STROBE BALANCE –INPUT 3 6 V– 4 5 4 V– H PACKAGE 8-LEAD TO-5 METAL CAN J8 PACKAGE 8-LEAD CERDIP 10 V + GND 1 +INPUT 2 + –INPUT 3 – NC 4 V– 5 9 OUTPUT 8 NC BALANCE/ 7 STROBE 6 BALANCE W PACKAGE 10-LEAD CERPAC 1 RH1011 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS NOTES (Preirradiation) (Note 10) MIN TA = 25°C TYP MAX SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP UNITS VOS Input Offset Voltage IOS Input Offset Current IB Input Bias Current ΔVOS ΔT Input Offset Voltage Drift TMIN ≤ T ≤ TMAX AVOL Large Signal Voltage Gain VS = ±15V, RL = 1kΩ, – 10V ≤ VOUT ≤ 14.5V 200 4 V/mV VS = 5V, RL = 500Ω, 0.5V ≤ VOUT ≤ 4.5V 50 4 V/mV 90 1 dB CMRR RS ≤ 50kΩ 3 4 1.5 2.0 1 1 3.0 3.0 2,3 2,3 mV mV 3,4 4 1 20 2,3 nA 3 4 50 65 1 1 80 80 2,3 2,3 nA nA 5,9 Common Mode Rejection Ratio Input Voltage Range VS = ±15V VS = Single 5V td Response Time VOL Output Saturation Voltage VIN = –5mV, ISINK = 8mA ISINK = 50mA Output Leakage Current VIN = 5mV, VGND = – 15V, VOUT = 20V μV/°C 25 8,9 8,9 – 14.5 0.5 13 3.0 – 14.5 0.5 13 3.0 V V 6,9 250 ns 11 0.4 1.5 1 1 0.5 1.5 2,3 2,3 V V 10 1 500 2,3 nA Positive Supply Current 11 4.0 1 mA Negative Supply Current 11 2.5 1 mA Strobe Current Minimum to Ensure Output Transistor is Turned Off 7,9,11 μA 500 Input Capacitance 6 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS pF (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si) 100Krad(Si) 200Krad(Si) MIN MAX MIN MAX MIN MAX UNITS VOS Input Offset Voltage 1.5 1.5 1.5 2.5 4 mV IOS Input Offset Current 4 4 4 20 50 nA IB Input Bias Current 50 100 150 200 300 nA AVOL Large-Signal Voltage Gain CMRR Common Mode Rejection Ratio VOL 2 RL = 1kΩ, – 10V ≤ VOUT ≤ 14.5V Input Voltage Range VS = ±15V VS = Single 5V 8,9 Output Saturation Voltage VIN = –5mV, ISINK = 8mA ISINK = 50mA 11 Output Leakage Current VIN = 5mV, VGND = – 15V VOUT = 20V 200 200 150 100 50 V/mV 90 90 90 90 86 dB – 14.5 0.5 13 – 14.5 3.0 0.5 13 3.0 – 14.5 13 – 14.5 13 – 14.5 0.5 3.0 0.5 3.0 0.5 0.4 1.5 0.4 1.5 0.4 1.5 10 10 100 13 3.0 V V 0.4 1.5 0.4 1.5 V V 100 100 nA RH1011 TABLE 1A: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS (Postirradiation) (Note 10) 10Krad(Si) 20Krad(Si) NOTES MIN MAX MIN MAX 50Krad(Si) 100Krad(Si) 200Krad(Si) MIN MAX MIN MAX MIN MAX UNITS Positive Supply Current 11 4.0 4.0 4.0 4.0 4.0 mA Negative Supply Current 11 2.5 2.5 2.5 2.5 2.5 mA Strobe Current Minimum to Ensure Output 7,9,11 Transistor is Turned Off 500 Input Capacitance 500 6 (Typ) 500 6 (Typ) 6 (Typ) 500 6 (Typ) μA 500 6 (Typ) pF Note 7: Do not short the STROBE pin to ground. It should be current driven at 3mA to 5mA for the shortest strobe time. Currents as low as 500μA will strobe the RH1011 if speed is not important. External leakage on the STROBE pin in excess of 0.2μA when the strobe is “off ” can cause offset voltage shifts. Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the LT1011 data sheet. Note 9: Guaranteed by design, characterization or correlation to other tested parameters. Note 10: VS = ±15V, VCM = 0V, RS = 0Ω, TA = 25°C, VGND = V–, output at Pin 7, unless otherwise noted. Note 11: VGND = 0V. Note 1: Inputs may be clamped to supplies with diodes so that maximum input voltage actually exceeds supply voltage by one diode drop. See Input Protection discussion in the LT®1011 data sheet. Note 2: TJMAX = 150°C. Note 3: Output is sinking 1.5mA with VOUT = 0V. Note 4: These specifications apply for all supply voltages from a single 5V to ±15V, the entire input voltage range and for both high and low output states. The high state is ISINK = 100μA, VOUT = (V + – 1V) and the low state is ISINK = 8mA, VOUT = 0.8V. Therefore, this specication defines a worstcase error band that includes effects due to common mode signals, voltage gain and output load. Note 5: Drift is calculated by dividing the offset difference measured at minimum and maximum temperatures by the temperature difference. Note 6: Response time is measured with a 100mV step and 5mV overdrive. The output load is a 500Ω resistor tied to 5V. Time measurement is taken when the output crosses 1.4V. U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4 Group A Test Requirements (Method 5005) 1,2,3,4 Group B and D End Point Electrical Parameters (Method 5005) 1,2,3 * PDA Applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 12V 5.1k 12Ω 2 5.1k 8 + 7 3 1 – 4 12Ω –12V RH1011 TDBC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH1011 U W TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage V S = ±15V VCM = 0V 300 INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 30 V S = ±15V RS = 0Ω VCM = 0V (3 TYPICAL UNITS) 6 Input Offset Current Input Bias Current 4 2 0 –2 V S = ±15V VCM = 0V 20 INPUT OFFSET CURRENT (nA) 8 200 100 –4 10 0 –10 –20 –30 –6 –40 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 10 100 TOTAL DOSE KRAD (Si) 1 RH1011 G01 1000 1000 RH1011 G03 RH1011 G02 Common Mode Rejection Ratio Voltage Gain 130 V S = ±15V RL = 1k VCM = 0V 600 500 400 300 200 100 COMMON MODE REJECTION RATIO (dB) 700 VOLTAGE GAIN (V/mV) 10 100 TOTAL DOSE KRAD (Si) 1 V S = ±15V VCM = –14.5V TO 13V 120 110 100 90 80 70 60 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G04 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1011 G05 I.D. No. 66-10-0159 Rev. D 0308 4 Linear Technology Corporation LT/LT 0308 REV D • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1989