PD - 94114
PROVISIONAL
IRFB42N20D
IRFS42N20D
IRFSL42N20D
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
RDS(on) max
ID
200V
0.055Ω
42.6A
D2Pak
IRFS42N20D
TO-262
IRFSL42N20D
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
TO-220AB
l Fully Characterized Avalanche Voltage
IRFB42N20D
and Current
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
42.6
30
170
3.8
300
2
± 30
TBD
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
260 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l
Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes
through are on page 6
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1
03/05/01
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
TBD
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.055
Ω
VGS = 10V, ID = 25.5A
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
TBD
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
103
26
48
TBD
TBD
TBD
TBD
3470
560
120
TBD
TBD
TBD
Max. Units
Conditions
–––
S
VDS = 25V, ID = 25.5A
–––
ID = 25.5A
–––
nC
VDS = 160V
–––
VGS = 10V
–––
VDD = 100V
–––
ID = 25.5A
ns
–––
RG = TBDΩ
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Typ.
Max.
Units
–––
–––
–––
TBD
25.5
30
mJ
A
mJ
Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
–––
0.50
–––
–––
0.5
–––
62
40
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
°C/W
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 42.6
showing the
A
G
integral reverse
––– ––– 170
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25.5A, VGS = 0V
––– TBD TBD
ns
TJ = 25°C, IF = 25.5A
––– 2.4 3.6
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFS/IRFSL42N20D
PROVISIONAL
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
-B -
3 .7 8 (.1 4 9 )
3 .5 4 (.1 3 9 )
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
-A -
1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )
4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 )
M IN
1
2
3
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )
3X
3X
1 .4 0 (.0 5 5 )
1 .1 5 (.0 4 5 )
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - S OU RC E
4 - D R A IN
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
0 .3 6 (.0 1 4 )
3X
M
B A M
0 .5 5 (.0 2 2 )
0 .4 6 (.0 1 8 )
2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )
2 .5 4 (.1 0 0)
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
L O T C O D E 9 B 1M
A
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEM BLY
LOT COD E
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PART NU M BER
IR F 1 0 1 0
9246
9B
1M
D ATE CO DE
(Y Y W W )
YY = YEAR
W W = W EEK
3
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
1 5.49 (.6 10)
1 4.73 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
4
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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PROVISIONAL
IRFB/IRFS/IRFSL42N20D
TO-262 Package Outline
TO-262 Part Marking Information
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5
IRFB/IRFS/IRFSL42N20D
PROVISIONAL
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CT IO N 1 .8 5 ( .0 7 3 )
1 .6 0 (.0 6 3)
1 .5 0 (.0 5 9)
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
1 .6 5 ( .0 6 5 )
0.3 68 (.0 14 5 )
0.3 42 (.0 13 5 )
24 .3 0 (.9 57 )
23 .9 0 (.9 41 )
1 5.42 (.60 9)
1 5.22 (.60 1)
TR L
1.7 5 (.06 9 )
1.2 5 (.04 9 )
10.9 0 (.4 29 )
10.7 0 (.4 21 )
4 .7 2 (.1 36 )
4 .5 2 (.1 78 )
1 6.10 (.63 4)
1 5.90 (.62 6)
F E E D D IR E C TIO N
13.50 (.5 32)
12.80 (.5 04)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX .
60.00 (2.362)
MIN .
N O TES :
1. C O MF O RM S TO EIA-418.
2. C O NT RO LL ING D IM EN SIO N: MIL LIM ETER .
3. D IM ENS IO N M EAS URE D @ HU B.
4. IN C LUD ES FL ANG E D ISTO R TIO N @ O U TER E DG E.
26.40 (1.039)
24.40 (.9 61)
30.40 (1.197)
MA X.
4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = TBDmH
RG = TBDΩ, I AS = 25.5A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
This is only applied to TO-220AB package
T J ≤ 175°C
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 25.5A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 9/00
6
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