ELDRS Report_RH1011W_Fab Lot 10220414.1.pdf

ELDRS Report
09-443 100126 R1.1
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
Enhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the
RH1011W Voltage Comparator for Linear Technology
Customer: Linear Technology (PO# 54022L)
RAD Job Number: 09-443
Part Type Tested: Linear Technology RH1011W Voltage Comparator
Commercial Part Number: RH1011W
Traceability Information: Assembly Lot# 524463.1, Date Code 0919A, Fab Lot# 10220414.1, Wafer 12,
(Obtained from Linear Technology PO 54022L). See photograph of unit under test in Appendix A.
Quantity of Units: 12 units total, 5 units for biased irradiation, 5 units for unbiased irradiation and 2 control
units. Serial numbers 1063 to 1065, 1067, and 1068 were biased during irradiation, serial numbers 1069, and
1071 to 1074 were unbiased during irradiation and serial numbers 1087 and 1088 were used as controls. See
Appendix B for the radiation bias connection table.
Pre-Irradiation Burn-In: Burn-In performed by Linear Technology prior to receipt by RAD.
TID Dose Rate and Test Increments: 10mrad(Si)/s with readings at pre-irradiation, 10, 20, 30 and 50krad(Si).
TID Overtest and Post-Irradiation Anneal: No overtest. 24-hour room temperature anneal followed by a 168hour 100°C anneal. Both anneals shall be performed in the same electrical bias condition as the irradiations.
Electrical measurements shall be made following each anneal increment.
TID Test Standard: MIL-STD-883G, Method 1019.7, Condition D
TID Electrical Test Conditions: Pre-irradiation, and within one hour following each radiation exposure.
Test Hardware: LTS2020 Tester, 2101 Family Board, 0608 Fixture, and RH1011 BGSS- DUT Card
Facility and Radiation Source: Radiation Assured Devices Longmire Laboratories, Colorado Springs, CO using
the GB-150 low dose rate Co60 source. Dosimetry performed by CaF TLDs traceable to NIST. RAD’s
dosimetry has been audited by DSCC and RAD has been awarded Laboratory Suitability for MIL-STD-750 TM
1019.5
Irradiation and Test Temperature: Ambient room temperature for irradiation and test controlled to 24°C ± 6°C.
ELDRS Test Result: PASSED. Units Passed to 50krad(Si) with all parameters
remaining within specification including after application of the 90/90 KTL
statistics, with the exception of AVOL. AVOL was “out-of-specification” at all
dose increments (including pre-irradiation) due to limitations on measurement
precision
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1.0. Overview and Background
It is well known that total dose ionizing radiation can cause parametric degradation and ultimately
functional failure in electronic devices. The damage occurs via electron-hole pair production, transport
and trapping in the dielectric regions. In advanced CMOS technology nodes (0.6μm and smaller) the
bulk of the damage is manifested in the thicker isolation regions, such as shallow trench or local
oxidation of silicon (LOCOS) oxides (also known as “birds-beak” oxides). However, many linear and
mixed signal devices that utilize bipolar minority carrier elements exhibit an enhanced low dose rate
sensitivity (ELDRS). At this time there is no known or accepted a priori method for predicting
susceptibility to ELDRS or simulating the low dose rate sensitivity with a “conventional” room
temperature 50-300rad(Si)/s irradiation (Condition A in MIL-STD-883G TM 1019.7). Over the past 10
years a number of accelerating techniques have been examined, including an elevated temperature
anneal, such as that used for MOS devices (see ASTM-F-1892 for more technical details) and irradiating
at various temperatures. However, none of these techniques have proven useful across the wide variety
of linear and/or mixed signal devices used in spaceborne applications.
The latest requirement incorporated in MIL-STD-883G TM 1019.7 requires that devices that could
potentially exhibit ELDRS “shall be tested either at the intended application dose rate, at a prescribed
low dose rate to an overtest radiation level, or with an accelerated test such as an elevated temperature
irradiation test that includes a parameter delta design margin”. While the recently released MIL-STD883 TM 1019.7 allows for accelerated testing, the requirements for this are to essentially perform a low
dose rate ELDRS test to verify the suitability of the acceleration method on the component of interest
before the acceleration technique can be instituted. Based on the limitations of accelerated testing and to
meet the requirements of MIL-STD-883G TM 1019.7 Condition D, we have performed an ELDRS test
at 10mrad(Si)/s.
2.0. Radiation Test Apparatus
The ELDRS testing described in this final report was performed using the facilities at Radiation Assured
Devices’ Longmire Laboratories in Colorado Springs, CO. The ELDRS source is a GB-150 irradiator
modified to provide a panoramic exposure. The Co-60 rods are held in the base of the irradiator heavily
shielded by lead. During the irradiation exposures the rod is raised by an electronic timer/controller and
the exposure is performed in air. The dose rate for this irradiator in this configuration ranges from
approximately 1mrad(Si)/s to a maximum of approximately 50rad(Si)/s as determined by the distance
from the source. For the low dose rate ELDRS testing described in this report, the devices are placed
approximately 2-meters from the Co-60 rods. The irradiator calibration is maintained by Radiation
Assured Devices’ Longmire Laboratories using thermoluminescent dosimeters (TLDs) traceable to the
National Institute of Standards and Technology (NIST). Figure 2.1 shows a photograph of the Co-60
irradiator at RAD’s Longmire Laboratory facility.
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Figure 2.1. Radiation Assured Devices’ Co-60 irradiator. The dose rate is obtained by positioning the deviceunder-test at a fixed distance from the gamma cell. The dose rate for this irradiator varies from approximately
50rad(Si)/s close to the rods down to <1mrad(Si)/s at a distance of approximately 4-meters.
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3.0.
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Radiation Test Conditions
The RH1011W voltage comparator described in this final report was tested using two bias conditions,
biased with a split 12V supply and all pins tied to ground, see Appendix B for details on biasing
conditions. These bias circuits satisfy the requirements of MIL-STD-883G TM1019.7 Section 3.9.3
Bias and Loading Conditions which states “The bias applied to the test devices shall be selected to
produce the greatest radiation induced damage or the worst-case damage for the intended application, if
known. While maximum voltage is often worst case some bipolar linear device parameters (e.g. input
bias current or maximum output load current) exhibit more degradation with 0 V bias.”
The devices were irradiated to a maximum total ionizing dose level of 50krad(Si) with incremental
readings at 10, 20, 30 and 50krad(Si). Electrical testing occurred within one hour following the end of
each irradiation segment. For intermediate irradiations, the units were tested and returned to total dose
exposure within two hours from the end of the previous radiation increment. The TID bias board was
positioned in the Co-60 cell to provide the required minimum of 50rad(Si)/s and was located inside a
lead-aluminum enclosure. The lead-aluminum enclosure is required under MIL-STD-883G TM1019.7
Section 3.4 that reads as follows: “Lead/Aluminum (Pb/Al) container. Test specimens shall be enclosed
in a Pb/Al container to minimize dose enhancement effects caused by low-energy, scattered radiation. A
minimum of 1.5 mm Pb, surrounding an inner shield of at least 0.7 mm Al, is required. This Pb/Al
container produces an approximate charged particle equilibrium for Si and for TLDs such as CaF2. The
radiation field intensity shall be measured inside the Pb/Al container (1) initially, (2) when the source is
changed, or (3) when the orientation or configuration of the source, container, or test-fixture is changed.
This measurement shall be performed by placing a dosimeter (e.g., a TLD) in the device-irradiation
container at the approximate test-device position. If it can be demonstrated that low energy scattered
radiation is small enough that it will not cause dosimetry errors due to dose enhancement, the Pb/Al
container may be omitted”.
The final dose rate within the lead-aluminum box was determined based on TLD dosimetry
measurements just prior to the beginning of the total dose irradiations. The final dose rate for this work
was 10.0mrad(Si)/s with a precision of ±5%.
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4.0.
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Tested Parameters
The following parameters were tested during the course of this work:
1. Positive Supply Current
2. Negative Supply Current
3. Input Offset Voltage
4. Input Offset Current
5. + Input Bias Current
6. - Input Bias Current
7. Large Signal Voltage Gain
8. Common Mode Rejection Ratio
9. Strobe Current
10. Output Sat Voltage @ 8mA
11. Output Sat Voltage @ 50mA
12. Output Leakage Current
Appendix C details the measured parameters, test conditions, pre-irradiation specification and
measurement resolution for each of the measurements.
The parametric data was obtained as “read and record” and all the raw data plus an attributes summary
are contained in this report as well as in a separate Excel file. The attributes data contains the average,
standard deviation and the average with the KTL values applied. The KTL values used is 2.742 per
MIL HDBK 814 using one sided tolerance limits of 90/90 and a 5-piece sample size. This survival
probability/level of confidence is consistent with a 22-piece sample size and zero failures analyzed using
a lot tolerance percent defective (LTPD) approach. Note that the following criteria must be met for a
device to pass the ELDRS testing: following the radiation exposure the unit shall pass the specification
value and the average value for the each device must pass the specification value when the KTL limits
are applied. If either of these conditions is not satisfied following the radiation exposure, then the lot
could be logged as an ELDRS failure.
Further, MIL-STD-883G, TM 1019.7 Section 3.13.1.1 Characterization test to determine if a part
exhibits ELDRS” states the following: Select a minimum random sample of 21 devices from a
population representative of recent production runs. Smaller sample sizes may be used if agreed upon
between the parties to the test. All of the selected devices shall have undergone appropriate elevated
temperature reliability screens, e.g. burn-in and high temperature storage life. Divide the samples into
four groups of 5 each and use the remaining part for a control. Perform pre-irradiation electrical
characterization on all parts assuring that they meet the Group A electrical tests. Irradiate 5 samples
under a 0 volt bias and another 5 under the irradiation bias given in the acquisition specification at 50300 rad(Si)/s and room temperature. Irradiate 5 samples under a 0 volt bias and another 5 under
irradiation bias given in the acquisition specification at < 10mrad(Si)/s and room temperature. Irradiate
all samples to the same dose levels, including 0.5 and 1.0 times the anticipated specification dose, and
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repeat the electrical characterization on each part at each dose level. Post irradiation electrical
measurements shall be performed per paragraph 3.10 where the low dose rate test is considered
Condition D. Calculate the radiation induced change in each electrical parameter (Δpara) for each
sample at each radiation level. Calculate the ratio of the median Δpara at low dose rate to the median
Δpara at high dose rate for each irradiation bias group at each total dose level. If this ratio exceeds 1.5
for any of the most sensitive parameters then the part is considered to be ELDRS susceptible. This test
does not apply to parameters which exhibit changes that are within experimental error or whose values
are below the pre-irradiation electrical specification limits at low dose rate at the specification dose.
Therefore, the data in this report can be analyzed along with the high dose rate report titled “Total
Ionizing Dose (TID) Radiation Testing of the RH1011W Voltage Comparator for Linear Technology” to
demonstrate that these parts do not exhibit ELDRS as defined in the current test method. The following
exception should be noted: The input offset current did exhibit a slightly larger response during the
ELDRS test compared to the TID test for the units irradiated under electrical bias, which could be an
indication of a slight ELDRS effect. However the sample size is too small to make a firm conclusion.
5.0. ELDRS Test Results
Using the conditions stated above, the RH1011 devices passed the ELDRS test to 50krad(Si) with no
significant degradation to most of the measured parameters with radiation. Figures 5.1 through 5.12
show plots of all the measured parameters versus total ionizing dose. In these data plots the solid
diamonds are the average of the measured data points for the sample irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the units irradiated with all
pins tied to ground. The black lines (solid or dashed) are the average of the data points after application
of the KTL statistics on the sample irradiated in the biased condition while the shaded lines (solid or
dashed) are the average of the data points after application of the KTL statistics on the sample irradiated
in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or
maximum specification value as defined in the datasheet and/or test plan. Similarly, tables 5.1 through
5.12 show the raw data, averages, standard deviation, +KTL statistics, -KTL statistics, specification
limit and Pass/Fail condition for each parameter.
In addition to the irradiation results, the data plots and tables described above contain anneal data.
These anneals are done to better understand underlying physical mechanisms responsible for radiationinduced parametric shifts and are not part of the criteria used to establish whether or not the lot passes or
fails the radiation test. In all cases the parts either improved or exhibited no change during the anneal,
except for input offset current, which continued to degrade during the anneal and exceeded the datasheet
limits (before and after application of the KTL statistics). The anneals tend to reduce the trapped holes,
while leaving any interface trapped charge relatively unchanged from the end of the irradiation. If
during the irradiation, the oxide trapped charge (positively charged) and interface charge (negatively
charged) are created in similar quantities, than a device could perform very well electrically (i.e. show
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only a small shift) but then show decreasing performance during the anneal. The design of the RH1011
features NPN input bias current-cancellation circuitry to reduce input bias currents of lateral PNP input
differential by a factor of four. The slight increase in offset current observed post-radiation could be due
to mismatch of lateral PNP input differential betas due to mismatched reduction in minority carrier
efficiency near surface of base regions of LPNP transistors. Fixed bias current cancellation would
appear to amplify this mismatch by the same factor of four. The above radiation mechanisms and/or
other mechanisms might be root cause of reduced minority carrier efficiencies of LPNP transistors.
As seen clearly in these figures, the pre- and post-irradiation data are well within the specification even
after application of the KTL statistics and the control units, as expected, show no significant changes to
any of the parameters throughout the course of the measurements. Therefore we can conclude that the
small observed degradation was due to the radiation exposure. The following minor exceptions should
be noted: open loop gain (AVOL) is outside of the specification at all dose increments (including preirradiation) after application of the KTL statistics due to a combination of our ability to measure these
parameters with high precision (See Appendix C, Table C.2) and the relatively large standard deviation
of the sample population relative to their pre-irradiation limits). It is important to understand that the
testing and statistics used in this document are based on an “analysis of variables” technique, which
relies on small sample sizes to qualify much larger lot sizes (see MIL-HDBK-814, p. 91 for a discussion
of statistical treatments). Not all measured parameters are well suited to this approach due to inherent
large variations (e.g. AVOL, as discussed above) where the device exhibits extreme sensitivity to input
conditions, resulting in a very large standard deviation. If necessary, larger samples sizes could be used
to qualify these parameters using an “attributes” approach. If a lot tolerance percent defective (LTPD)
approach were used, then 22-pieces could be tested and if all units pass (without application of any
statistics) then the lot is qualified to a 90/90 survival probability/level of confidence, the same level as
achieved using the KTL statistics discussed in this report on a 5-piece sample size.
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ELDRS Report
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Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Positive Supply Current (A)
4.50E-03
4.00E-03
3.50E-03
3.00E-03
2.50E-03
2.00E-03
0
10
20
30
40
50
24-Hr60
Anneal 168-Hr
70Anneal
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.1. Plot of Positive Supply Current (A) versus total dose. The data show no significant change with
total dose. The solid diamonds are the average of the measured data points for the samples irradiated under
electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
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Table 5.1. Raw data for Positive Supply Current (A) versus total dose, including the statistical
analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Positive Supply Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
0
2.89E-03
2.85E-03
2.85E-03
2.91E-03
3.00E-03
2.93E-03
2.80E-03
2.90E-03
2.85E-03
2.88E-03
2.90E-03
2.97E-03
10
2.89E-03
2.88E-03
2.97E-03
2.96E-03
3.02E-03
2.94E-03
2.88E-03
2.95E-03
2.90E-03
2.93E-03
2.97E-03
3.05E-03
20
2.90E-03
2.89E-03
3.01E-03
3.00E-03
2.99E-03
2.98E-03
2.90E-03
2.89E-03
2.95E-03
2.92E-03
2.96E-03
3.03E-03
30
2.90E-03
2.93E-03
2.95E-03
2.92E-03
3.02E-03
3.00E-03
2.87E-03
2.93E-03
2.89E-03
2.93E-03
2.88E-03
2.98E-03
50
2.91E-03
2.87E-03
2.96E-03
2.97E-03
3.01E-03
3.01E-03
2.86E-03
2.95E-03
2.94E-03
2.96E-03
2.93E-03
3.02E-03
24-hr
Anneal
168-hr
Anneal
60
2.93E-03
2.92E-03
3.00E-03
2.97E-03
2.99E-03
2.99E-03
2.90E-03
2.91E-03
2.92E-03
2.93E-03
2.95E-03
3.05E-03
70
2.89E-03
2.85E-03
2.97E-03
2.90E-03
2.99E-03
2.96E-03
2.90E-03
2.89E-03
2.90E-03
2.96E-03
2.92E-03
2.99E-03
Biased Statistics
Average Biased
2.90E-03
2.94E-03
2.96E-03
2.94E-03
2.94E-03
2.96E-03
2.92E-03
Std Dev Biased
6.16E-05
5.86E-05
5.81E-05
4.62E-05
5.46E-05
3.56E-05
5.83E-05
Ps90%/90% (+KTL) Biased
3.07E-03
3.10E-03
3.12E-03
3.07E-03
3.09E-03
3.06E-03
3.08E-03
Ps90%/90% (-KTL) Biased
2.73E-03
2.78E-03
2.80E-03
2.82E-03
2.79E-03
2.86E-03
2.76E-03
Un-Biased Statistics
Average Un-Biased
2.87E-03
2.92E-03
2.93E-03
2.92E-03
2.94E-03
2.93E-03
2.92E-03
Std Dev Un-Biased
4.97E-05
2.92E-05
3.70E-05
4.98E-05
5.41E-05
3.54E-05
3.49E-05
Ps90%/90% (+KTL) Un-Biased
3.01E-03
3.00E-03
3.03E-03
3.06E-03
3.09E-03
3.03E-03
3.02E-03
Ps90%/90% (-KTL) Un-Biased
2.74E-03
2.84E-03
2.83E-03
2.79E-03
2.80E-03
2.83E-03
2.83E-03
Specification MAX
4.00E-03
4.00E-03
4.00E-03
4.00E-03
4.00E-03
4.00E-03
4.00E-03
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
-1.60E-03
Negative Supply Current (A)
-1.70E-03
-1.80E-03
-1.90E-03
-2.00E-03
-2.10E-03
-2.20E-03
-2.30E-03
-2.40E-03
-2.50E-03
-2.60E-03
0
10
20
30
40
50
24-Hr 60
Anneal 168-Hr
70Anneal
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.2. Plot of Negative Supply Current (A) versus total dose. The data show no significant change with
total dose. The solid diamonds are the average of the measured data points for the samples irradiated under
electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
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Table 5.2. Raw data for Negative Supply Current (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Negative Supply Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
0
-1.99E-03
-2.01E-03
-2.03E-03
-2.05E-03
-2.10E-03
-2.07E-03
-1.96E-03
-2.03E-03
-2.01E-03
-2.02E-03
-2.03E-03
-2.09E-03
10
-2.03E-03
-2.03E-03
-2.08E-03
-2.08E-03
-2.12E-03
-2.08E-03
-2.01E-03
-2.05E-03
-2.05E-03
-2.05E-03
-2.06E-03
-2.12E-03
20
-2.03E-03
-2.02E-03
-2.09E-03
-2.07E-03
-2.11E-03
-2.09E-03
-2.01E-03
-2.05E-03
-2.04E-03
-2.05E-03
-2.05E-03
-2.13E-03
30
-2.01E-03
-2.02E-03
-2.08E-03
-2.07E-03
-2.11E-03
-2.08E-03
-2.01E-03
-2.04E-03
-2.03E-03
-2.04E-03
-2.05E-03
-2.11E-03
50
-2.03E-03
-2.02E-03
-2.08E-03
-2.07E-03
-2.10E-03
-2.09E-03
-2.02E-03
-2.06E-03
-2.04E-03
-2.05E-03
-2.06E-03
-2.13E-03
24-hr
Anneal
168-hr
Anneal
60
-2.02E-03
-2.02E-03
-2.07E-03
-2.06E-03
-2.11E-03
-2.09E-03
-2.01E-03
-2.05E-03
-2.04E-03
-2.05E-03
-2.06E-03
-2.13E-03
70
-2.01E-03
-2.01E-03
-2.07E-03
-2.05E-03
-2.11E-03
-2.08E-03
-2.00E-03
-2.05E-03
-2.03E-03
-2.05E-03
-2.05E-03
-2.11E-03
Biased Statistics
Average Biased
-2.04E-03 -2.07E-03 -2.06E-03 -2.06E-03 -2.06E-03 -2.06E-03 -2.05E-03
Std Dev Biased
4.22E-05
3.83E-05
3.85E-05
4.21E-05
3.39E-05
3.78E-05
4.24E-05
Ps90%/90% (+KTL) Biased
-1.92E-03 -1.96E-03 -1.96E-03 -1.94E-03 -1.97E-03 -1.95E-03 -1.93E-03
Ps90%/90% (-KTL) Biased
-2.15E-03 -2.17E-03 -2.17E-03 -2.17E-03 -2.15E-03 -2.16E-03 -2.17E-03
Un-Biased Statistics
Average Un-Biased
-2.02E-03 -2.05E-03 -2.05E-03 -2.04E-03 -2.05E-03 -2.05E-03 -2.04E-03
Std Dev Un-Biased
3.96E-05
2.49E-05
2.86E-05
2.55E-05
2.59E-05
2.86E-05
2.95E-05
Ps90%/90% (+KTL) Un-Biased
-1.91E-03 -1.98E-03 -1.97E-03 -1.97E-03 -1.98E-03 -1.97E-03 -1.96E-03
Ps90%/90% (-KTL) Un-Biased
-2.13E-03 -2.12E-03 -2.13E-03 -2.11E-03 -2.12E-03 -2.13E-03 -2.12E-03
Specification MIN
-2.50E-03 -2.50E-03 -2.50E-03 -2.50E-03 -2.50E-03 -2.50E-03 -2.50E-03
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
11
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
2.00E-03
Input Offset Voltage (V)
1.50E-03
1.00E-03
5.00E-04
0.00E+00
-5.00E-04
-1.00E-03
-1.50E-03
-2.00E-03
0
10
20
30
40
50
24-Hr60
Anneal 168-Hr
70Anneal
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.3. Plot of Input Offset Voltage (V) versus total dose. The data show no significant change with total
dose. The solid diamonds are the average of the measured data points for the samples irradiated under
electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
12
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.3. Raw data for Input Offset Voltage (V) versus total dose, including the statistical
analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Input Offset Voltage (V)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
0
3.00E-04
9.00E-05
2.80E-04
0.00E+00
1.60E-04
-1.40E-04
-4.80E-04
3.00E-04
3.10E-04
3.10E-04
0.00E+00
0.00E+00
10
1.00E-05
-7.00E-05
2.00E-05
-1.50E-04
1.00E-05
-6.00E-05
-2.70E-04
2.80E-04
2.90E-04
3.00E-04
0.00E+00
5.00E-05
20
1.00E-05
-1.30E-04
-2.00E-05
-1.30E-04
0.00E+00
-1.00E-05
-2.70E-04
3.00E-04
2.90E-04
3.00E-04
0.00E+00
9.00E-05
30
0.00E+00
-2.80E-04
0.00E+00
-2.80E-04
-3.00E-05
-6.00E-05
-2.80E-04
3.00E-04
2.70E-04
2.90E-04
2.00E-05
4.00E-05
50
-1.40E-04
-5.10E-04
0.00E+00
-5.50E-04
-1.50E-04
-7.00E-05
-2.80E-04
2.90E-04
2.50E-04
2.90E-04
0.00E+00
4.00E-05
24-hr
Anneal
168-hr
Anneal
60
-1.50E-04
-2.80E-04
0.00E+00
-5.30E-04
-1.50E-04
-7.00E-05
-2.90E-04
2.90E-04
2.80E-04
2.60E-04
0.00E+00
4.00E-05
70
-1.00E-05
-2.90E-04
0.00E+00
-2.90E-04
-6.00E-05
-1.50E-04
-2.90E-04
2.90E-04
2.80E-04
2.80E-04
0.00E+00
4.00E-05
Biased Statistics
Average Biased
1.66E-04 -3.60E-05 -5.40E-05 -1.18E-04 -2.70E-04 -2.22E-04 -1.30E-04
Std Dev Biased
1.27E-04
7.33E-05
7.02E-05
1.48E-04
2.45E-04
1.99E-04
1.48E-04
Ps90%/90% (+KTL) Biased
5.14E-04
1.65E-04
1.39E-04
2.89E-04
4.02E-04
3.23E-04
2.75E-04
Ps90%/90% (-KTL) Biased
-1.82E-04 -2.37E-04 -2.47E-04 -5.25E-04 -9.42E-04 -7.67E-04 -5.35E-04
Un-Biased Statistics
Average Un-Biased
6.00E-05
1.08E-04
1.22E-04
1.04E-04
9.60E-05
9.40E-05
8.20E-05
Std Dev Un-Biased
3.59E-04
2.60E-04
2.56E-04
2.62E-04
2.59E-04
2.62E-04
2.80E-04
Ps90%/90% (+KTL) Un-Biased
1.04E-03
8.21E-04
8.25E-04
8.23E-04
8.06E-04
8.13E-04
8.50E-04
Ps90%/90% (-KTL) Un-Biased
-9.23E-04 -6.05E-04 -5.81E-04 -6.15E-04 -6.14E-04 -6.25E-04 -6.86E-04
Specification MIN
-1.50E-03 -1.50E-03 -1.50E-03 -1.50E-03 -1.50E-03 -1.50E-03 -1.50E-03
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
Specification MAX
1.50E-03
1.50E-03
1.50E-03
1.50E-03
1.50E-03
1.50E-03
1.50E-03
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
13
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
6.00E-09
Input Offset Current (A)
4.00E-09
2.00E-09
0.00E+00
-2.00E-09
-4.00E-09
-6.00E-09
-8.00E-09
-1.00E-08
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.4. Plot of Input Offset Current (A) versus total dose. The data show no significant change with total
dose. The solid diamonds are the average of the measured data points for the samples irradiated under
electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
14
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.4. Raw data for Input Offset Current (A) versus total dose, including the statistical
analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Input Offset Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
-1.70E-10
-7.10E-10
-3.20E-10
-6.00E-11
0.00E+00
1.40E-10
-6.20E-10
-6.00E-11
1.00E-10
1.00E-10
-1.10E-10
-3.00E-10
10
-6.50E-10
-5.50E-10
-7.00E-10
1.00E-11
9.00E-11
1.15E-09
2.70E-10
-1.20E-10
-7.00E-11
1.20E-10
-1.50E-10
4.50E-10
20
-2.90E-10
-1.12E-09
-1.08E-09
-6.00E-10
2.70E-10
4.40E-10
1.40E-10
1.00E-10
-1.20E-10
9.00E-11
0.00E+00
9.20E-10
30
-1.36E-09
-1.89E-09
-1.37E-09
-1.37E-09
-7.70E-10
5.90E-10
-1.00E-10
2.00E-10
-2.00E-10
-7.00E-11
3.30E-10
3.70E-10
50
-1.34E-09
-2.61E-09
-2.10E-09
-2.59E-09
-1.54E-09
7.50E-10
1.20E-10
1.00E-10
-3.30E-10
1.10E-10
-1.30E-10
0.00E+00
60
-1.78E-09
-1.99E-09
-3.50E-09
-3.83E-09
-1.58E-09
6.90E-10
-8.00E-11
8.00E-11
-8.00E-11
-1.50E-10
1.80E-10
3.30E-10
70
-4.33E-09
-5.65E-09
-5.69E-09
-2.99E-09
-3.49E-09
-8.00E-11
8.00E-11
7.00E-11
-7.00E-11
-9.00E-11
1.70E-10
2.90E-10
-2.52E-10
2.83E-10
5.25E-10
-1.03E-09
-3.60E-10
3.79E-10
6.80E-10
-1.40E-09
-5.64E-10
5.80E-10
1.03E-09
-2.16E-09
-1.35E-09
3.97E-10
-2.65E-10
-2.44E-09
-2.04E-09
5.85E-10
-4.31E-10
-3.64E-09
-2.54E-09
1.05E-09
3.36E-10
-5.41E-09
-4.43E-09
1.23E-09
-1.06E-09
-7.80E-09
-6.80E-11
2.70E-10
1.30E-10
8.40E-11
1.50E-10
9.20E-11
-1.80E-11
3.18E-10
5.16E-10
2.01E-10
3.19E-10
3.86E-10
3.45E-10
8.53E-11
8.04E-10
1.68E-09
6.80E-10
9.59E-10
1.21E-09
1.04E-09
2.16E-10
-9.40E-10
-1.14E-09
-4.20E-10
-7.91E-10
-9.08E-10
-8.53E-10
-2.52E-10
-4.00E-09
-4.00E-09
-4.00E-09
-4.00E-09
-4.00E-09
-4.00E-09
-4.00E-09
PASS
PASS
PASS
PASS
PASS
FAIL
FAIL
4.00E-09
4.00E-09
4.00E-09
4.00E-09
4.00E-09
4.00E-09
4.00E-09
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
15
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
2.00E-07
Positive Input Bias Current (A)
1.50E-07
1.00E-07
5.00E-08
0.00E+00
-5.00E-08
-1.00E-07
-1.50E-07
-2.00E-07
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.5. Plot of Positive Input Bias Current (A) versus total dose. The data show no significant change
with total dose. The solid diamonds are the average of the measured data points for the samples irradiated
under electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
16
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.5. Raw data for Positive Input Bias Current (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Positive Input Bias Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
-1.70E-08
-1.73E-08
-1.73E-08
-1.72E-08
-1.88E-08
-1.88E-08
-1.74E-08
-1.73E-08
-1.87E-08
-2.00E-08
-1.73E-08
-1.71E-08
10
-1.88E-08
-1.97E-08
-1.89E-08
-2.13E-08
-2.26E-08
-2.17E-08
-2.04E-08
-1.95E-08
-2.02E-08
-2.02E-08
-1.73E-08
-1.77E-08
20
-2.24E-08
-2.16E-08
-2.24E-08
-2.25E-08
-2.30E-08
-2.29E-08
-2.17E-08
-2.01E-08
-2.03E-08
-2.01E-08
-1.72E-08
-1.80E-08
30
-2.33E-08
-2.31E-08
-2.34E-08
-2.45E-08
-2.56E-08
-2.51E-08
-2.31E-08
-2.31E-08
-2.29E-08
-2.31E-08
-1.73E-08
-1.75E-08
50
-2.78E-08
-2.67E-08
-2.88E-08
-2.76E-08
-3.18E-08
-2.82E-08
-2.64E-08
-2.62E-08
-2.56E-08
-2.60E-08
-1.73E-08
-1.77E-08
60
-2.74E-08
-2.89E-08
-2.87E-08
-2.64E-08
-3.17E-08
-2.81E-08
-2.60E-08
-2.60E-08
-2.59E-08
-2.57E-08
-1.74E-08
-1.77E-08
70
-2.55E-08
-2.49E-08
-2.47E-08
-2.60E-08
-2.85E-08
-2.45E-08
-2.57E-08
-2.47E-08
-2.45E-08
-2.45E-08
-1.73E-08
-1.79E-08
-1.75E-08
7.08E-10
-1.56E-08
-1.94E-08
-2.02E-08
1.63E-09
-1.58E-08
-2.47E-08
-2.24E-08
4.99E-10
-2.10E-08
-2.38E-08
-2.40E-08
1.05E-09
-2.11E-08
-2.69E-08
-2.86E-08
1.98E-09
-2.31E-08
-3.40E-08
-2.86E-08
2.02E-09
-2.31E-08
-3.42E-08
-2.59E-08
1.52E-09
-2.17E-08
-3.01E-08
-1.84E-08
-2.04E-08
-2.10E-08
-2.34E-08
-2.65E-08
-2.63E-08
-2.48E-08
1.08E-09
7.77E-10
1.25E-09
9.03E-10
1.00E-09
1.01E-09
5.11E-10
-1.55E-08
-1.83E-08
-1.76E-08
-2.10E-08
-2.37E-08
-2.35E-08
-2.34E-08
-2.14E-08
-2.25E-08
-2.45E-08
-2.59E-08
-2.92E-08
-2.91E-08
-2.62E-08
-5.00E-08
-5.00E-08
-1.00E-07
-1.00E-07
-1.50E-07
-1.50E-07
-1.50E-07
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-08
5.00E-08
1.00E-07
1.00E-07
1.50E-07
1.50E-07
1.50E-07
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
17
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Biased
Ps90%/90% (-KTL) Un-Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (+KTL) Un-Biased
Specification MIN
Specification MAX
2.00E-07
Negative Input Bias Current (A)
1.50E-07
1.00E-07
5.00E-08
0.00E+00
-5.00E-08
-1.00E-07
-1.50E-07
-2.00E-07
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.6. Plot of Negative Input Bias Current (A) versus total dose. The data show no significant change
with total dose. The solid diamonds are the average of the measured data points for the samples irradiated
under electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
18
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.6. Raw data for Negative Input Bias Current (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Negative Input Bias Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
-1.74E-08
-1.74E-08
-1.97E-08
-1.73E-08
-2.01E-08
-1.60E-08
-1.80E-08
-1.74E-08
-1.72E-08
-1.87E-08
-1.76E-08
-2.03E-08
10
-2.12E-08
-1.85E-08
-2.29E-08
-1.89E-08
-2.27E-08
-1.80E-08
-2.01E-08
-2.04E-08
-2.03E-08
-2.01E-08
-1.77E-08
-1.99E-08
20
-2.31E-08
-2.29E-08
-2.34E-08
-2.30E-08
-2.31E-08
-2.19E-08
-2.00E-08
-2.03E-08
-2.10E-08
-2.03E-08
-2.02E-08
-2.08E-08
30
-2.31E-08
-2.60E-08
-2.42E-08
-2.56E-08
-2.49E-08
-2.34E-08
-2.32E-08
-2.26E-08
-2.33E-08
-2.18E-08
-1.77E-08
-1.99E-08
50
-3.01E-08
-2.94E-08
-2.90E-08
-3.01E-08
-3.03E-08
-2.45E-08
-2.58E-08
-2.59E-08
-2.63E-08
-2.57E-08
-2.03E-08
-1.98E-08
60
-3.04E-08
-2.88E-08
-2.90E-08
-2.99E-08
-3.03E-08
-2.45E-08
-2.60E-08
-2.59E-08
-2.61E-08
-2.62E-08
-2.01E-08
-1.97E-08
70
-2.90E-08
-2.88E-08
-2.84E-08
-2.74E-08
-2.94E-08
-2.46E-08
-2.45E-08
-2.30E-08
-2.60E-08
-2.32E-08
-1.75E-08
-1.97E-08
-1.84E-08
1.40E-09
-1.46E-08
-2.22E-08
-2.08E-08
2.07E-09
-1.52E-08
-2.65E-08
-2.31E-08
2.01E-10
-2.25E-08
-2.36E-08
-2.48E-08
1.17E-09
-2.16E-08
-2.80E-08
-2.98E-08
5.54E-10
-2.83E-08
-3.13E-08
-2.97E-08
7.31E-10
-2.77E-08
-3.17E-08
-2.86E-08
7.86E-10
-2.65E-08
-3.08E-08
-1.75E-08
-1.98E-08
-2.07E-08
-2.28E-08
-2.56E-08
-2.57E-08
-2.43E-08
1.01E-09
9.97E-10
7.66E-10
6.60E-10
7.05E-10
7.02E-10
1.22E-09
-1.47E-08
-1.70E-08
-1.86E-08
-2.10E-08
-2.37E-08
-2.38E-08
-2.09E-08
-2.02E-08
-2.25E-08
-2.28E-08
-2.46E-08
-2.76E-08
-2.77E-08
-2.76E-08
-5.00E-08
-5.00E-08
-1.00E-07
-1.00E-07
-1.50E-07
-1.50E-07
-1.50E-07
PASS
PASS
PASS
PASS
PASS
PASS
PASS
5.00E-08
5.00E-08
1.00E-07
1.00E-07
1.50E-07
1.50E-07
1.50E-07
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
19
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
Large Signal Voltage Gain (V/mV)
6.00E+03
4.00E+03
2.00E+03
0.00E+00
-2.00E+03
-4.00E+03
-6.00E+03
-8.00E+03
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.7. Plot of Large Signal Voltage Gain (V/mV) versus total dose. The data show no significant change
with total dose. The solid diamonds are the average of the measured data points for the samples irradiated
under electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
20
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.7. Raw data for Large Signal Voltage Gain (V/mV) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Large Signal Voltage Gain (V/mV)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
24-hr
Anneal
168-hr
Anneal
0
3.43E+03
2.57E+03
1.29E+03
2.62E+03
2.34E+03
8.57E+03
1.58E+03
3.67E+03
6.72E+02
3.12E+03
1.34E+03
2.16E+03
10
3.39E+03
3.89E+03
1.76E+03
7.18E+02
3.52E+03
2.33E+03
1.63E+02
1.04E+03
2.70E+03
9.34E+03
1.09E+05
7.22E+04
20
2.86E+03
4.47E+03
8.15E+03
3.54E+03
4.53E+03
6.64E+02
5.25E+02
1.29E+03
2.57E+03
1.08E+03
1.31E+05
1.26E+04
30
2.43E+03
1.11E+03
5.13E+03
2.45E+03
4.85E+03
1.77E+03
2.78E+03
2.78E+03
1.94E+03
3.55E+03
5.49E+03
5.06E+04
50
3.82E+03
1.05E+04
1.30E+03
3.29E+03
6.46E+03
2.27E+03
1.95E+03
7.63E+03
4.20E+03
8.39E+03
4.36E+02
2.07E+05
60
2.86E+03
2.78E+03
6.88E+03
2.48E+03
2.94E+03
1.47E+03
2.64E+03
3.42E+03
3.95E+03
2.78E+03
8.74E+02
1.12E+04
70
5.66E+02
2.58E+03
8.64E+02
1.84E+03
3.21E+03
2.29E+03
3.43E+03
6.77E+02
1.94E+03
6.43E+03
1.39E+04
1.40E+03
2.45E+03
7.70E+02
4.56E+03
3.38E+02
2.66E+03
1.36E+03
6.38E+03
-1.06E+03
4.71E+03
2.04E+03
1.03E+04
-8.94E+02
3.19E+03
1.73E+03
7.95E+03
-1.56E+03
5.07E+03
3.54E+03
1.48E+04
-4.65E+03
3.59E+03
1.85E+03
8.65E+03
-1.48E+03
1.81E+03
1.12E+03
4.88E+03
-1.25E+03
3.52E+03
3.12E+03
1.23E+03
2.56E+03
4.89E+03
2.85E+03
2.95E+03
3.06E+03
3.62E+03
8.12E+02
7.20E+02
2.99E+03
9.36E+02
2.18E+03
1.19E+04
1.31E+04
3.45E+03
4.54E+03
1.31E+04
5.42E+03
8.92E+03
-4.88E+03 -6.82E+03 -1.00E+03
5.90E+02 -3.31E+03
2.85E+02 -3.02E+03
2.00E+02
2.00E+02
2.00E+02
2.00E+02
1.50E+02
1.50E+02
1.50E+02
FAIL
FAIL
FAIL
FAIL
FAIL
FAIL
FAIL
An ISO 9001:2008 and DSCC Certified Company
21
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
Common Mode Rejection Ratio (dB)
1.40E+02
1.30E+02
1.20E+02
1.10E+02
1.00E+02
9.00E+01
8.00E+01
7.00E+01
6.00E+01
0
10
20
30
40
50
24-Hr Anneal
168-Hr70Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.8. Plot of Common Mode Rejection Ratio (dB) versus total dose. The data show no significant
change with total dose. The solid diamonds are the average of the measured data points for the samples
irradiated under electrical bias while the shaded diamonds are the average of the measured data points for the
samples irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated under electrical bias while the gray
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation
minimum and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
22
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.8. Raw data for Common Mode Rejection Ratio (dB) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Common Mode Rejection Ratio (dB)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Status
24-hr
Anneal
168-hr
Anneal
0
1.20E+02
1.11E+02
1.11E+02
1.22E+02
1.03E+02
1.22E+02
1.31E+02
1.23E+02
1.29E+02
1.14E+02
1.26E+02
1.27E+02
10
1.29E+02
1.16E+02
1.26E+02
1.26E+02
1.29E+02
1.25E+02
1.24E+02
1.16E+02
1.24E+02
1.39E+02
1.30E+02
1.15E+02
20
1.50E+02
1.28E+02
1.30E+02
1.27E+02
1.32E+02
1.22E+02
1.26E+02
1.14E+02
1.30E+02
1.12E+02
1.42E+02
1.11E+02
30
1.31E+02
1.26E+02
1.35E+02
1.11E+02
1.37E+02
1.24E+02
1.12E+02
1.23E+02
1.47E+02
1.29E+02
1.32E+02
1.51E+02
50
1.13E+02
1.08E+02
1.26E+02
1.16E+02
1.23E+02
1.33E+02
1.25E+02
1.17E+02
1.17E+02
1.31E+02
1.26E+02
1.18E+02
60
1.22E+02
1.27E+02
1.15E+02
1.19E+02
1.07E+02
1.26E+02
1.28E+02
1.31E+02
1.13E+02
1.37E+02
1.30E+02
1.30E+02
70
1.28E+02
1.29E+02
1.21E+02
1.57E+02
1.30E+02
1.08E+02
1.26E+02
1.21E+02
1.24E+02
1.18E+02
1.47E+02
1.18E+02
1.13E+02
7.51E+00
1.34E+02
9.28E+01
1.25E+02
5.38E+00
1.40E+02
1.11E+02
1.33E+02
9.47E+00
1.59E+02
1.07E+02
1.28E+02
1.06E+01
1.57E+02
9.90E+01
1.17E+02
7.72E+00
1.38E+02
9.60E+01
1.18E+02
7.81E+00
1.39E+02
9.65E+01
1.33E+02
1.38E+01
1.71E+02
9.49E+01
1.24E+02
1.26E+02
1.21E+02
1.27E+02
1.24E+02
1.27E+02
1.19E+02
6.45E+00
8.15E+00
7.59E+00
1.29E+01
7.53E+00
8.70E+00
7.08E+00
1.42E+02
1.48E+02
1.41E+02
1.62E+02
1.45E+02
1.51E+02
1.39E+02
1.06E+02
1.03E+02
9.97E+01
9.18E+01
1.04E+02
1.03E+02
1.00E+02
9.00E+01
9.00E+01
9.00E+01
9.00E+01
9.00E+01
9.00E+01
9.00E+01
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
23
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MIN
Ps90%/90% (-KTL) Biased
0.00E+00
Strobe Current (A)
-1.00E-04
-2.00E-04
-3.00E-04
-4.00E-04
-5.00E-04
-6.00E-04
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.9. Plot of Strobe Current (A) versus total dose. The data show no significant change with total dose.
The solid diamonds are the average of the measured data points for the samples irradiated under electrical bias
while the shaded diamonds are the average of the measured data points for the samples irradiated with all pins
tied to ground. The black lines (solid and/or dashed) are the average of the data points after application of the
KTL statistics on the samples irradiated under electrical bias while the gray lines (solid and/or dashed) are the
average of the data points after application of the KTL statistics on the samples irradiated in the unbiased
condition. The red dotted line(s) are the pre- and/or post-irradiation minimum and/or maximum specification
value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
24
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.9. Raw data for Strobe Current (A) versus total dose, including the statistical analysis,
specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Strobe Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
0
-2.37E-04
-2.36E-04
-1.86E-04
-1.79E-04
-2.18E-04
-2.27E-04
-1.66E-04
-1.97E-04
-1.86E-04
-2.35E-04
-1.71E-04
-2.10E-04
10
-2.35E-04
-1.97E-04
-2.35E-04
-1.66E-04
-1.99E-04
-2.36E-04
-2.35E-04
-1.96E-04
-2.00E-04
-1.66E-04
-1.66E-04
-1.80E-04
20
-2.04E-04
-2.36E-04
-2.42E-04
-2.17E-04
-1.98E-04
-2.40E-04
-1.95E-04
-2.40E-04
-1.76E-04
-2.37E-04
-1.82E-04
-1.80E-04
30
-1.90E-04
-2.35E-04
-1.76E-04
-1.98E-04
-2.26E-04
-2.15E-04
-1.86E-04
-1.97E-04
-1.76E-04
-1.76E-04
-1.76E-04
-1.82E-04
50
-1.95E-04
-2.20E-04
-2.18E-04
-1.95E-04
-1.96E-04
-2.22E-04
-2.45E-04
-1.99E-04
-2.36E-04
-2.40E-04
-2.37E-04
-2.40E-04
24-hr
Anneal
168-hr
Anneal
60
-2.44E-04
-1.95E-04
-2.06E-04
-1.95E-04
-2.10E-04
-2.39E-04
-2.35E-04
-1.95E-04
-1.95E-04
-2.18E-04
-2.30E-04
-2.27E-04
70
-1.95E-04
-1.95E-04
-2.45E-04
-1.86E-04
-2.37E-04
-2.07E-04
-2.35E-04
-2.02E-04
-2.43E-04
-1.95E-04
-2.36E-04
-2.20E-04
Biased Statistics
Average Biased
-2.11E-04 -2.06E-04 -2.19E-04 -2.05E-04 -2.05E-04 -2.10E-04 -2.12E-04
Std Dev Biased
2.75E-05
2.91E-05
1.92E-05
2.47E-05
1.29E-05
2.02E-05
2.71E-05
Ps90%/90% (+KTL) Biased
-1.36E-04 -1.27E-04 -1.67E-04 -1.37E-04 -1.69E-04 -1.55E-04 -1.37E-04
Ps90%/90% (-KTL) Biased
-2.86E-04 -2.86E-04 -2.72E-04 -2.73E-04 -2.40E-04 -2.65E-04 -2.86E-04
Un-Biased Statistics
Average Un-Biased
-2.02E-04 -2.07E-04 -2.18E-04 -1.90E-04 -2.28E-04 -2.16E-04 -2.16E-04
Std Dev Un-Biased
2.85E-05
2.93E-05
3.01E-05
1.66E-05
1.85E-05
2.10E-05
2.12E-05
Ps90%/90% (+KTL) Un-Biased
-1.24E-04 -1.26E-04 -1.35E-04 -1.45E-04 -1.78E-04 -1.59E-04 -1.58E-04
Ps90%/90% (-KTL) Un-Biased
-2.80E-04 -2.87E-04 -3.00E-04 -2.35E-04 -2.79E-04 -2.74E-04 -2.74E-04
Specification MIN
-5.00E-04 -5.00E-04 -5.00E-04 -5.00E-04 -5.00E-04 -5.00E-04 -5.00E-04
Status
PASS
PASS
PASS
PASS
PASS
PASS
PASS
An ISO 9001:2008 and DSCC Certified Company
25
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
4.50E-01
Output Sat Voltage ISINK=8mA (V)
4.00E-01
3.50E-01
3.00E-01
2.50E-01
2.00E-01
1.50E-01
1.00E-01
5.00E-02
0.00E+00
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.10. Plot of Output Sat Voltage ISINK=8mA (V) versus total dose. The data show no significant
change with total dose. The solid diamonds are the average of the measured data points for the samples
irradiated under electrical bias while the shaded diamonds are the average of the measured data points for the
samples irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated under electrical bias while the gray
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation
minimum and/or maximum specification value as defined in the datasheet and/or test plan.
An ISO 9001:2008 and DSCC Certified Company
26
Radiation Assured Devices
5017 N. 30th Street
Colorado Springs, CO 80919
(719) 531-0800
ELDRS Report
09-443 100126 R1.1
Table 5.10. Raw data for Output Sat Voltage ISINK=8mA (V) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Output Sat Voltage ISINK=8mA (V)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
2.58E-01
2.58E-01
2.53E-01
2.59E-01
2.48E-01
2.55E-01
2.55E-01
2.60E-01
2.54E-01
2.55E-01
2.55E-01
2.51E-01
10
2.56E-01
2.60E-01
2.56E-01
2.60E-01
2.49E-01
2.55E-01
2.55E-01
2.61E-01
2.56E-01
2.57E-01
2.54E-01
2.49E-01
20
2.60E-01
2.58E-01
2.58E-01
2.59E-01
2.49E-01
2.56E-01
2.56E-01
2.62E-01
2.57E-01
2.57E-01
2.55E-01
2.50E-01
30
2.60E-01
2.59E-01
2.55E-01
2.58E-01
2.49E-01
2.57E-01
2.56E-01
2.62E-01
2.56E-01
2.59E-01
2.55E-01
2.50E-01
50
2.61E-01
2.62E-01
2.56E-01
2.60E-01
2.49E-01
2.56E-01
2.56E-01
2.63E-01
2.57E-01
2.58E-01
2.54E-01
2.49E-01
60
2.60E-01
2.61E-01
2.57E-01
2.61E-01
2.49E-01
2.58E-01
2.55E-01
2.63E-01
2.56E-01
2.59E-01
2.54E-01
2.50E-01
70
2.60E-01
2.63E-01
2.56E-01
2.62E-01
2.50E-01
2.57E-01
2.57E-01
2.63E-01
2.56E-01
2.59E-01
2.54E-01
2.49E-01
2.55E-01
4.66E-03
2.68E-01
2.42E-01
2.56E-01
4.49E-03
2.69E-01
2.44E-01
2.57E-01
4.44E-03
2.69E-01
2.45E-01
2.56E-01
4.44E-03
2.68E-01
2.44E-01
2.58E-01
5.32E-03
2.72E-01
2.43E-01
2.58E-01
5.08E-03
2.72E-01
2.44E-01
2.58E-01
5.31E-03
2.73E-01
2.44E-01
2.56E-01
2.57E-01
2.58E-01
2.58E-01
2.58E-01
2.58E-01
2.58E-01
2.39E-03
2.49E-03
2.51E-03
2.55E-03
2.92E-03
3.11E-03
2.79E-03
2.62E-01
2.64E-01
2.64E-01
2.65E-01
2.66E-01
2.67E-01
2.66E-01
2.49E-01
2.50E-01
2.51E-01
2.51E-01
2.50E-01
2.50E-01
2.51E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
4.00E-01
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
Output Sat Voltage ISINK=50mA (V)
1.60E+00
1.40E+00
1.20E+00
1.00E+00
8.00E-01
6.00E-01
4.00E-01
2.00E-01
0.00E+00
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.11. Plot of Output Sat Voltage ISINK=50mA (V) versus total dose. The data show no significant
change with total dose. The solid diamonds are the average of the measured data points for the samples
irradiated under electrical bias while the shaded diamonds are the average of the measured data points for the
samples irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the
data points after application of the KTL statistics on the samples irradiated under electrical bias while the gray
lines (solid and/or dashed) are the average of the data points after application of the KTL statistics on the
samples irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation
minimum and/or maximum specification value as defined in the datasheet and/or test plan.
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Table 5.11. Raw data for Output Sat Voltage ISINK=50mA (V) versus total dose, including
the statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Output Sat Voltage ISINK=50mA (V)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
6.94E-01
6.96E-01
6.86E-01
6.91E-01
6.72E-01
6.86E-01
6.93E-01
6.98E-01
6.94E-01
6.88E-01
6.88E-01
6.77E-01
10
6.93E-01
7.01E-01
6.88E-01
6.98E-01
6.78E-01
6.88E-01
6.91E-01
6.99E-01
6.96E-01
6.91E-01
6.89E-01
6.72E-01
20
7.05E-01
7.02E-01
7.02E-01
6.93E-01
6.78E-01
6.91E-01
6.90E-01
7.02E-01
6.95E-01
6.92E-01
6.90E-01
6.72E-01
30
6.96E-01
6.97E-01
6.85E-01
6.90E-01
6.71E-01
6.89E-01
6.87E-01
6.97E-01
6.92E-01
6.91E-01
6.85E-01
6.71E-01
50
6.99E-01
7.05E-01
6.85E-01
6.92E-01
6.72E-01
6.90E-01
6.89E-01
6.99E-01
6.94E-01
6.92E-01
6.82E-01
6.69E-01
60
6.99E-01
6.96E-01
6.88E-01
6.94E-01
6.71E-01
6.88E-01
6.91E-01
6.98E-01
6.95E-01
6.94E-01
6.83E-01
6.69E-01
70
7.01E-01
7.09E-01
6.85E-01
6.96E-01
6.73E-01
6.87E-01
6.85E-01
6.98E-01
6.90E-01
6.93E-01
6.81E-01
6.71E-01
6.88E-01
9.60E-03
7.14E-01
6.61E-01
6.92E-01
9.07E-03
7.16E-01
6.67E-01
6.96E-01
1.10E-02
7.26E-01
6.66E-01
6.88E-01
1.06E-02
7.17E-01
6.59E-01
6.91E-01
1.28E-02
7.26E-01
6.55E-01
6.90E-01
1.11E-02
7.20E-01
6.59E-01
6.93E-01
1.41E-02
7.31E-01
6.54E-01
6.92E-01
6.93E-01
6.94E-01
6.91E-01
6.93E-01
6.93E-01
6.91E-01
4.82E-03
4.42E-03
4.85E-03
3.77E-03
3.96E-03
3.83E-03
5.13E-03
7.05E-01
7.05E-01
7.07E-01
7.02E-01
7.04E-01
7.04E-01
7.05E-01
6.79E-01
6.81E-01
6.81E-01
6.81E-01
6.82E-01
6.83E-01
6.77E-01
1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00 1.50E+00
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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Average Biased
Average Un-Biased
Ps90%/90% (+KTL) Un-Biased
Specification MAX
Ps90%/90% (+KTL) Biased
1.08E-07
Output Leakage Current (A)
8.80E-08
6.80E-08
4.80E-08
2.80E-08
8.00E-09
-1.20E-08
0
10
20
30
40
50
24-Hr Anneal
168-Hr70
Anneal
60
@ 25°C
@ 100°C
Total Dose (krad(Si))
Figure 5.12. Plot of Output Leakage Current (A) versus total dose. The data show no significant change with
total dose. The solid diamonds are the average of the measured data points for the samples irradiated under
electrical bias while the shaded diamonds are the average of the measured data points for the samples
irradiated with all pins tied to ground. The black lines (solid and/or dashed) are the average of the data points
after application of the KTL statistics on the samples irradiated under electrical bias while the gray lines (solid
and/or dashed) are the average of the data points after application of the KTL statistics on the samples
irradiated in the unbiased condition. The red dotted line(s) are the pre- and/or post-irradiation minimum
and/or maximum specification value as defined in the datasheet and/or test plan.
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ELDRS Report
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Table 5.12. Raw data for Output Leakage Current (A) versus total dose, including the
statistical analysis, specification and the status of the testing (pass/fail).
Total Dose (krad(Si))
Output Leakage Current (A)
Device
1063
1064
1065
1067
1068
1069
1071
1072
1073
1074
1087
1088
Biased Statistics
Average Biased
Std Dev Biased
Ps90%/90% (+KTL) Biased
Ps90%/90% (-KTL) Biased
Un-Biased Statistics
Average Un-Biased
Std Dev Un-Biased
Ps90%/90% (+KTL) Un-Biased
Ps90%/90% (-KTL) Un-Biased
Specification MAX
Status
24-hr
Anneal
168-hr
Anneal
0
2.00E-10
2.00E-10
4.00E-10
4.00E-10
4.00E-10
4.00E-10
2.00E-10
3.00E-10
3.00E-10
4.00E-10
4.00E-10
4.00E-10
10
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
20
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
1.00E-10
1.00E-10
30
1.00E-10
0.00E+00
0.00E+00
1.00E-10
2.00E-10
2.00E-10
1.00E-10
2.00E-10
1.00E-10
2.00E-10
2.00E-10
2.00E-10
50
5.00E-10
5.00E-10
4.00E-10
6.00E-10
5.00E-10
3.00E-10
3.00E-10
5.00E-10
3.00E-10
5.00E-10
3.00E-10
0.00E+00
60
5.00E-10
6.00E-10
4.00E-10
5.00E-10
1.00E-10
2.00E-10
3.00E-10
4.00E-10
4.00E-10
3.00E-10
1.00E-10
1.00E-10
70
2.00E-10
2.00E-10
2.00E-10
2.00E-10
1.00E-10
0.00E+00
0.00E+00
1.00E-10
2.00E-10
0.00E+00
1.00E-10
2.00E-10
3.20E-10
1.10E-10
6.20E-10
1.96E-11
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
0.00E+00
8.00E-11
8.37E-11
3.09E-10
-1.49E-10
5.00E-10
7.07E-11
6.94E-10
3.06E-10
4.20E-10
1.92E-10
9.47E-10
-1.07E-10
1.80E-10
4.47E-11
3.03E-10
5.74E-11
3.20E-10
0.00E+00
0.00E+00
1.60E-10
3.80E-10
3.20E-10
6.00E-11
8.37E-11
0.00E+00
0.00E+00
5.48E-11
1.10E-10
8.37E-11
8.94E-11
5.49E-10
0.00E+00
0.00E+00
3.10E-10
6.80E-10
5.49E-10
3.05E-10
9.06E-11
0.00E+00
0.00E+00
9.81E-12
7.96E-11
9.06E-11
-1.85E-10
1.00E-08
1.00E-08
1.00E-08
1.00E-08
1.00E-07
1.00E-07
1.00E-07
PASS
PASS
PASS
PASS
PASS
PASS
PASS
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6.0. Summary / Conclusions
The low dose rate total ionizing dose testing described in this final report was performed using the
facilities at Radiation Assured Devices’ Longmire Laboratories in Colorado Springs, CO. For the low
dose rate ELDRS testing described in this report, the devices were placed approximately 2-meters from
the Co-60 rods to achieve the required 10mrad(Si)/s dose rate. Samples of the RH1011W quad
operational amplifier described in this report were irradiated biased with a split 12V supply and
unbiased (all leads tied to ground). The devices were irradiated to a maximum total ionizing dose level
of 50krad(Si) with a pre-rad baseline reading as well as incremental readings at 10, 20, and 30krad(Si).
Electrical testing occurred within one hour following the end of each irradiation segment. For
intermediate irradiations, the units were tested and returned to total dose exposure within two hours from
the end of the previous radiation increment. In addition, all units-under-test received a 24hr room
temperature and168hr 100°C anneal, using the same bias conditions as the radiation exposure.
The parametric data was obtained as “read and record” and all the raw data plus an attributes summary
were presented in this report. The attributes data contains the average, standard deviation and the
average with the KTL values applied. The KTL value used was 2.742 per MIL HDBK 814 using onesided tolerance limits of 90/90 and a 5-piece sample size. Note that the following criteria was used to
determine the outcome of the testing: following the radiation exposure each parameter had to pass the
specification value and the average value for the ten-piece sample must pass the specification value
when the KTL limits are applied. If these conditions were not both satisfied following the radiation
exposure, then the lot would be logged as an RLAT failure.
Using the conditions stated above, the RH1011W passed the ELDRS test to 50krad(Si). Most measured
parameters showed no significant degradation with radiation. The following minor exceptions should
be noted: open loop gain (AVOL) is outside of the specification at all dose increments (including preirradiation) after application of the KTL statistics due to a combination of our ability to measure these
parameters with high precision and the input offset current exhibited a slightly larger response during
the ELDRS test compared to the TID test. The input offset current also shows substantial degradation
during the anneal. However, as discussed in the text of this report the anneals tend to reduce the trapped
holes, while leaving any interface trapped charge relatively unchanged from the end of the irradiation. If
during the irradiation, the oxide trapped charge (positively charged) and interface charge (negatively
charged) are created in similar quantities, than a device could perform very well electrically (i.e. show
only a small shift) but then show decreasing performance during the anneal. The design of the RH1011
features NPN input bias current-cancellation circuitry to reduce input bias currents of lateral PNP input
differential by a factor of four. The slight increase in offset current observed post-radiation could be due
to mismatch of lateral PNP input differential betas due to mismatched reduction in minority carrier
efficiency near surface of base regions of LPNP transistors. Fixed bias current cancellation would
appear to amplify this mismatch by the same factor of four. The above radiation mechanisms and/or
other mechanisms might be root cause of reduced minority carrier efficiencies of LPNP transistors.
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Appendix A: Photograph of device-under-test to show part markings
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Appendix B: TID Bias Connections
Biased Samples:
Pin
Function
Connection / Bias
1
2
3
4
5
6
7
8
9
10
GROUND
+INPUT
-INPUT
NC
VBALANCE
BALANCE/STROBE
NC
OUTPUT
V+
GND
5.1kΩ to +12V
GND
NC
12Ω to -12V
NC
NC
NC
5.1kΩ to +12V
12Ω to +12V
Pin
Function
Connection / Bias
1
2
3
4
5
6
7
8
9
10
GROUND
+INPUT
-INPUT
NC
VBALANCE
BALANCE/STROBE
NC
OUTPUT
V+
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
Unbiased Samples:
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Figure B.1. Irradiation bias drawing for the units to be irradiated under electrical bias. This figure was extracted
from LINEAR TECHNOLOGY CORPORATION RH1011 Datasheet. Pin numbers are for the H or J8
package.
Figure B.2. W package drawing (for reference only). This figure was extracted from LINEAR TECHNOLOGY
CORPORATION RH1011 Datasheet.
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Appendix C: Electrical Test Parameters and Conditions
All electrical tests for this device are performed on one of Radiation Assured Device’s LTS2020 Test
Systems. The LTS2020 Test System is a programmable parametric tester that provides parameter
measurements for a variety of digital, analog and mixed signal products including voltage regulators,
voltage comparators, D to A and A to D converters. The LTS2020 Test System achieves accuracy and
sensitivity through the use of software self-calibration and an internal relay matrix with separate family
boards and custom personality adapter boards. The tester uses this relay matrix to connect the required
test circuits, select the appropriate voltage / current sources and establish the needed measurement loops
for all the tests performed. The tests will be conducted using the LTS-2101 Linear Family Board, LTS0608 Socket Assembly and the RH1011 DUT board. The measured parameters and test conditions are
shown in Tables C.1.
A listing of the measurement precision/resolution for each parameter is shown in Tables C.2. The
precision/resolution values were obtained either from test data or from the DAC resolution of the LTS2020. To generate the precision/resolution shown in Table C.2, one of the units-under-test was tested
repetitively (a total of 10-times with re-insertion between tests) to obtain the average test value and
standard deviation. Using this test data MIL-HDBK-814 90/90 KTL statistics were applied to the
measured standard deviation to generate the final measurement range. This value encompasses the
precision/resolution of all aspects of the test system, including the LTS2020 mainframe, family board,
socket assembly and DUT board as well as insertion error. In some cases, the measurement resolution is
limited by the internal DACs, which results in a measured standard deviation of zero. In these instances
the precision/resolution will be reported back as the LSB of the DAC.
Note that the testing and statistics used in this document are based on an “analysis of variables”
technique, which relies on small sample sizes to qualify much larger lot sizes (see MIL-HDBK-814, p.
91 for a discussion of statistical treatments). Not all measured parameters are well suited to this
approach due to inherent large variations. One such parameter is pre-irradiation Open Loop Gain, where
the device exhibits extreme sensitivity to input conditions, resulting in a very large standard deviation.
If necessary, larger samples sizes could be used to qualify these parameters using an “attributes”
approach.
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Table C.1. Measured parameters and test conditions for RH1011.
TEST DESCRIPTION
TEST CONDITIONS
Positive Supply Current
Negative Supply Current
Input Offset Voltage
Input Offset Current
+ Input Bias Current
- Input Bias Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Strobe Current
Output Sat Voltage @ 8mA
Output Sat Voltage @ 50mA
Output Leakage Current
V+=15V, V-=-15V and VGND=0
V+=15V, V-=-15V and VGND=0
V+=15V, V-=-15V, Output is Sinking 1.5mA with VOUT=0V
V+=15V, V-=-15V, Output is Sinking 1.5mA with VOUT=0V
V+=15V, V-=-15V, Output is Sinking 1.5mA with VOUT=0V
V+=15V, V-=-15V, Output is Sinking 1.5mA with VOUT=0V
V+=15V, V-=-15V, R=1kΩ to +15V, -10V < VOUT < +14.5V
V+=15V, V-=-15V, Common Mode Swing of ±10V
Minimum to ensure output transistor turned off.
VIN=-5mV and ISINK=8mA
VIN=0 and ISINK =50mA
V+=15V, V-=-15V, VIN=5mV, VGND=-15V, VOUT=20V
Table C.2. Measured parameters, pre-irradiation specifications, and measurement resolutions
for the RH1011.
Measured Parameter
Positive Supply Current
Negative Supply Current
Input Offset Voltage
Input Offset Current
+ Input Bias Current
- Input Bias Current
Large Signal Voltage Gain
Common Mode Rejection Ratio
Strobe Current
Output Sat Voltage @ 8mA
Output Sat Voltage @ 50mA
Output Leakage Current
Pre-Irradiation
Measurement
Specification
Resolution/Precision
4.0mA
-2.5mA
±1.5mV
±4.0nA
-50nA
-50nA
200V/mV
90dB
-500μA
0.4V
1.5V
10nA
± 6.16E-05A
± 4.44E-05A
± 5.04E-05V
± 7.89E-10A
± 4.10E-10A
± 2.06E-9A
± 9.11E+02V/mV
± 9.03E+00dB
± 3.86E-05A
± 2.13E-03V
± 5.19E-03V
± 1.81E-10A
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Appendix D: List of Figures used in Section 5 (ELDRS Test Results)
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.10
5.11
5.12
Positive Supply Current (A)
Negative Supply Current (A)
Input Offset Voltage (V)
Input Offset Current (A)
Positive Input Bias Current (A)
Negative Input Bias Current (A)
Large Signal Voltage Gain (V/mV)
Common Mode Rejection Ratio (dB)
Strobe Current (A)
Output Sat Voltage ISINK=8mA (V)
Output Sat Voltage ISINK=50mA (V)
Output Leakage Current (A)
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