Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET® POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. Part Number BVDSS RDS(on) ID IRFY044CM 60V 0.040Ω 16A* Features n n n n n Hermetically sealed Electrically isolated Simple Drive Requirements Ease of Paralleling Ceramic eyelets The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter I D @ VGS=10V, TC = 25°C I D @ VGS=10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ Tstg IRFY044CM Continuous Drain Current 16* Continuous Drain Current 16* Pulsed Drain Current 156 Max. Power Dissipation 100 Linear Derating Factor 0.8 Gate-to-Source Voltage ±20 Single Pulse Avalance Energy 100 Avalance Current 16* Repetitive Avalanche Energy 10 Peak Diode Recovery dv/dt 4.5 Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in (1.6mm) from case for 10 sec) Weight 4.3(typical) * ID current limited by pin diameter To Order Units A W W/K V mJ A mJ V/ns °C g Previous Datasheet Index Next Data Sheet IRFY044CM Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage 60 — — ∆BVDSS/∆TJ — 0.68 — VGS(th) gfs IDSS Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current — — 2.0 17 — — — — — — — — 0.040 — 4.0 — 25 250 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — 29 6.7 18 — — — — — — — — — — — — — — 8.7 100 -100 88 15 52 23 130 81 79 — LS Internal Source Inductance — 8.7 — nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2400 1100 230 — — — pF Test Conditions VGS = 0V, I D = 1.0mA V/°C Reference to 25°C, ID = 1.0mA Ω VGS = 10V, ID = 16A V VDS = VGS, ID = 250µA S ( ) VDS ≥ 15V, IDS = 16A VDS = 0.8 x max. rating,VGS = 0V µA VDS = 0.8 x max. rating VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V VGS = 10V, ID = 16A nC VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 30V, ID = 16A, RG = 9.1Ω VGS = 10V ns Ω RDS(on) V see figure 10 Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Modified MOSFET symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0v, VDS = 25V f = 1.0MHz. see figure 5 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) — — — — 16 156 A VSD trr QRR ton Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — — — 2.5 220 1.6 V ns µC Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, I S = 16A, VGS = 0V Tj = 25°C, IF = 16A, di/dt ≤ 100 A/µs VDD ≤ 50 V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink Min Typ Max Units — — — — — 0.21 To Order 1.25 80 K/W — Test Conditions Typical socket mount Mounting surface flat, smooth Previous Datasheet Index Next Data Sheet IRFY044CM Device Fig. 1 — Typical Output Characteristics TC = 25°C Fig. 2 —Typical Output Characteristics TC = 150°C 39A Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs. Temperature 16A Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet Index Next Data Sheet IRFY044CM Device 1000 Fig. 7 — Typical Source-to-Drain Diode Forward Voltage 10us 100 100us 1ms 10 DI , Drain Current (A) I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10ms 1 TC = 25 oC TJ = 150 oC Single Pulse 1 10 VDS , Drain-to-Source Voltage (V) Fig. 8 — Maximum Safe Operating Area ID , D ra in C ur re nt ( Am p s) 40 L IM IT ED BY P AC KA G E 30 20 10 A 0 25 50 75 100 125 150 TC , C a se T em p era tu re (°C ) Fig. 9 — Maximum Drain Current Vs. Case Temperature Fig. 10a — Switching Time Test Circuit Fig. 10b — Switching Time Waveforms To Order 100 Previous Datasheet Index Next Data Sheet IRFY044CM Device thJC Thermal Response (ZthJC) 10 10 1 1 0.50 0.20 PDM 0.10 .1 0.1 0.05 t1 Thermal Respo 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) .01 0.01 0.00001 Notes: 1. Duty factor D = t1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration V (B R)DSS D R IVE R L VD S D .U .T RG + - VD D IA S tp A 0 .0 1 Ω tp I AS E A S , S in g le P uls e A v a la nc h e E ne rgy (m J ) Fig. 12a — Unclamped Inductive Test Circuit Fig. 12b — Unclamped Inductive Waveforms 100 80 60 40 20 0 ID = 5 1 A V D D = 2 5V 25 50 A 75 100 125 150 175 S tarting T J , J u nc tio n Te m p eratu re (°C ) Fig. 13a — Gate Charge Test Circuit Fig. 12c — Max. Avalanche Energy vs. Current To Order Previous Datasheet Index Next Data Sheet Notes: IRFY044CM Device Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 11). @ VDD = 25V, Starting TJ = 25°C, EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 16A, VGS = 10V, 25 ≤ RG ≤ 200Ω I SD ≤ 16A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Fig. 13b — Basic Gate Charge Waveform Case Outline and Dimensions Pin 1 - Drain Pin 2 - Source Pin 3 - Gate 3 1 2 TO-257AA NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY044C NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA CAUTION BERYLLIAWARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 To Order