BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features ■ ■ ■ ■ TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications ■ Battery management ■ High speed switch ■ Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol d 3 g 1 2 Top view MSB003 SOT23 MBB076 s BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 55 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V - 335 mA Tsp = 25 °C - 0.83 W - 150 °C VGS = 4.5 V; ID = 500 mA 2.3 4.0 Ω VGS = 2.5 V; ID = 75 mA 2.4 5.0 Ω VGS = 1.8 V; ID = 75 mA 3.1 8.0 Ω Ptot total power dissipation Tj junction temperature RDSon drain-source on-state resistance 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Min Max Unit VDS Symbol Parameter drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 55 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 55 V VGS gate-source voltage - ±10 V ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 335 mA Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 212 mA A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 1.3 Tsp = 25 °C; Figure 1 Ptot total power dissipation - 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 335 mA ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.3 A © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data Rev. 02 — 26 April 2002 2 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa17 120 03aa25 120 Pder I der (%) (%) 80 80 40 40 0 0 0 50 100 200 150 0 50 Tsp (°C) 100 150 200 Tsp (°C) VGS ≥ 4.5 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03aa71 10 ID (A) Limit RDSon = VDS/ ID tp = 10 µs 1 100 µs 1 ms 10-1 DC 10 ms 100 ms 10-2 1 102 10 VDS (V) Tsp = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data Rev. 02 — 26 April 2002 3 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point mounted on metal clad substrate; Figure 4 - - 150 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint; mounted on printed circuit board - 350 - K/W 7.1 Transient thermal impedance 03aa69 103 Zth(j-sp) (K/W) δ = 0.5 102 0.2 0.1 δ= P 0.05 10 tp T 0.02 1 10-5 10-4 t tp single pulse T 10-3 10-2 10-1 1 10 tp (s) Mounted on metal clad substrate. Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data Rev. 02 — 26 April 2002 4 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C 55 75 - V Tj = −55 °C 50 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 0.4 1.0 1.3 V Tj = 150 °C 0.3 - - V Tj = −55 °C - - 2.5 V Tj = 25 °C - 0.01 1.0 µA Tj = 150 °C - - 10 µA - 10 100 nA Tj = 25 °C - 2.4 5 Ω Tj = 150 °C - - 7.4 Ω - 2.3 4 Ω - 3.1 8 Ω VDS = 44 V; VGS = 0 V IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 2.5 V; ID = 75 mA; Figure 7 and 8 VGS = 4.5 V; ID = 500 mA; Figure 7 and 8 Tj = 25 °C VGS = 1.8 V; ID = 75 mA; Figure 7 and 8 Tj = 25 °C Dynamic characteristics gfs forward transconductance VDS = 10 V; ID = 200 mA; Figure 11 100 380 - mS Qg(tot) total gate charge - 1.0 - nC Qgs gate-source charge ID = 0.5 A; VDS = 44 V; VGS = 8 V; Figure 14 - 0.05 - nC Qgd gate-drain (Miller) charge - 0.5 - nC Ciss input capacitance - 17 40 pF Coss output capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 - 7 30 pF Crss reverse transfer capacitance - 4 10 pF ton turn-on time toff turn-off time VDD = 50 V; RD = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω 4 10 ns 11 15 ns © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data - Rev. 02 — 26 April 2002 5 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit - 0.95 1.5 V Source-drain diode VSD source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 13 trr reverse recovery time Qr recovered charge IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V; VDS = 25 V 30 - ns 30 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data - Rev. 02 — 26 April 2002 6 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa73 0.8 03aa75 0.8 I D (A) ID (A) VGS = 4.5 V 0.6 Tj = 25 °C 0.6 150 °C 0.4 0.4 3V 2V 0.2 0.2 1.8 V 1.6 V 0 1.4 V 0 0.4 0.8 1.2 0 1.6 2 VDS (V) Tj = 25 °C 0 2 1 4 3 5 VGS (V) Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa74 20 03aa28 2.4 1.4 V RDSon (Ω) 16 a 1.6 V 1.8 1.8 V 12 2V 1.2 8 3V 4 0.6 VGS = 4.5 V 0 0 0.2 0.4 0.8 0.6 ID (A) 0 -60 60 120 180 Tj (°C) Tj = 25 °C R DSon a = --------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data 0 Rev. 02 — 26 April 2002 7 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa38 2 03aa89 10-1 ID (A) VGS(th) (V) 1.6 10-2 10-3 1.2 min typ 10-4 0.8 min 0.4 0 -60 10-5 10-6 0 typ 60 120 180 0 0.4 0.8 1.2 2 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03aa76 0.5 03aa78 102 gfs (S) C (pF) Tj = 25 °C 0.4 1.6 VGS (V) Tj (°C) Ciss 0.3 150 °C 10 Coss 0.2 Crss 0.1 0 0 0.2 0.4 ID (A) 0.6 Tj = 25 °C and 150 °C; VDS > ID × RDSon 1 10-1 102 10 VDS (V) VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data 1 Rev. 02 — 26 April 2002 8 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa77 1 03ab08 8 IS (A) VGS (V) 0.8 6 150 °C 0.6 4 Tj = 25 °C 0.4 2 0.2 0 0 0 0.4 0.8 1.2 1.6 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V 0 0.4 0.6 0.8 1 QG (nC) ID = 0.5 A; VDS = 44 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data 0.2 Rev. 02 — 26 April 2002 9 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB Fig 15. SOT23. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data Rev. 02 — 26 April 2002 10 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 02 20020426 CPCN Description - Product data (9397 750 09629) Modifications • 01 20000807 - VGS data updated. Product specification; initial version. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Product data Rev. 02 — 26 April 2002 11 of 13 BSH111 Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 9397 750 09629 Rev. 02 — 26 April 2002 12 of 13 Philips Semiconductors BSH111 N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2002 Document order number: 9397 750 09629