DICE SPECIFICATION RH07 8 1 7 6 2 3 4 PAD FUNCTION DIE CROSS REFERENCE (Notes 1, 2) 1. Offset Adjust 2. –IN 3.+IN 4.V– (Substrate) 5. Do Not Connect 6. OUT 7. V+ 8. Offset Adjust LTC Finished Part Number Order DICE CANDIDATE Part Number Below RH07 RH07 DICE Backside (substrate) is an alloyed gold layer. Connect to V –. 78 × 98 mils W DICE ELECTRICAL TEST LI ITS VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage 100 µV IOS Input Offset Current 3 nA IB Input Bias Current ±4 nA CMRR Common Mode Rejection Ratio VCM = ±13 105 dB PSRR Power Supply Rejection Ratio VS = ±3V to ±18V 98 dB AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±12V 200 V/mV VOUT Maximum Output Voltage Swing RL ≥ 2k RL ≥ 1k ±11.5 ±10.0 SR Slew Rate RL ≥ 2k 0.1 PD Power Dissipation No Load No Load, VS = ±3V Note 1: Dice are probe tested at 25°C to the limits shown. Final specs after assembly cannot be guaranteed at the die level due to yield loss and assembly shifts. For absolute maximum ratings, typical specifications, performance curves and finished product specifications, please refer to the standard data sheet. MIN MAX UNITS V V V/µs 120 6 mW mW Note 2: For dice tested to tighter limits than those listed above and/or lot qualification based on sample lot assembly and testing, please contact LTC marketing. Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH07 Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-02-0007 2 Linear Technology Corporation rh07 LT/LT 1099 50 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com © LINEAR TECHNOLOGY CORPORATION 1999