RH108A Operational Amplifier DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH108A is a precision operational amplifier particularly well-suited for high source impedance applicationsrequiring low offset and bias currents and low powerconsumption. (Note 1) Supply Voltage ........................................................±20V Differential Input Current (Note 1) .......................±10mA Input Voltage (Note 2)............................................ ±15V Output Short-Circuit Duration .......................... Indefinite Operating Temperature Range................ –55°C to 125°C Storage Temperature Range................... –65°C to 150°C Lead Temperature (Soldering, 10 sec) .................. 300°C The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringentmilitary applications. For complete electrical specifications, performance curves and applications information, see the LM108A/LM108 data sheet. L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. BURN-IN CIRCUIT 10k 20V 20V 33pF 7 2 8 – 1 200Ω 3 2 OR 6 249k + 3V 4 3 30pF 7 – + 8 1 6 1.5k 4 10k –20V –20V RH108A BI PACKAGE INFORMATION TOP VIEW 8 COMP1 1 7 V+ – –IN 2 + COMP1 1 –IN 2 6 OUT 5 NC +IN 3 TOP VIEW TOP VIEW COMP2 +IN 3 8 – + V– 4 4 V – (CASE) H PACKAGE 8-LEAD TO-5 METAL CAN J8 PACKAGE 8-LEAD CERDIP 7 COMP2 V + 6 OUT 5 NC COMPIN NC 1 10 GUARD 2 9 COMPOUT –IN 3 8 V+ +IN 4 7 OUT GUARD 5 6 V– W PACKAGE 10-LEAD CERPAC rh108afc 1 RH108A TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VOS Input Offset Voltage ΔVOS ΔTemp Average Tempco of Offset Voltage IOS Input Offset Current ΔTemp Average Tempco of Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain ΔIS CONDITIONS NOTES (Preirradiation, Note 4) MIN TA = 25°C TYP MAX SUBGROUP 0.5 –55°C ≤ TA ≤ 125°C MIN TYP MAX 1 1.0 3 SUBGROUP 2,3 5.0 0.2 1 0.4 3 VS = ±15V, VOUT = ±10V RL ≥ 10k 1 80 3.0 4 40 mV μV/°C 2,3 2.5 2.0 UNITS nA pA/°C 2,3 nA 5,6 V/mV CMRR Common Mode Rejection Ratio 96 1 96 2,3 dB PSRR Power Supply Rejection Ratio 96 1 96 2,3 dB Input Voltage Range VS = ±15V VS = ±15V, RL = 10k VOUT Output Voltage Swing RIN Input Resistance IS Supply Current 3 ±13.5 ±13 3 4 V ±13 5,6 30 0.6 TABLE 1A: ELECTRICAL CHARACTERISTICS 1 0.4 2 mA (Preirradiation, Note 4) 10KRAD (Si) MIN MAX 20KRAD (Si) 50KRAD (Si) 80KRAD (Si) MIN MAX MIN MAX MIN MAX SYMBOL PARAMETER VOS Input Offset Voltage 0.5 0.5 0.5 1.0 mV IOS Input Offset Current 0.3 0.3 0.3 0.3 nA IB Input Bias Current AVOL Large-Signal Voltage Gain CMRR Common Mode Rejection Ratio PSRR Power Supply Rejection Ratio Input Voltage Range VOUT Output Voltage Swing RIN Input Resistance IS Supply Current NOTES V MΩ (Note 6) CONDITIONS ±13.5 ±2.0 VS = ±15V, VOUT = ±10V RL ≥ 10k Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: For supply voltages less than ±15V, the maximum input voltage isequal to the supply voltage. ±2.0 ±2.0 ±4.0 UNITS nA 98 98 90 86 dB 96 96 84 70 dB 4 96 96 84 70 dB 3 ±13.5 ±13.5 ±13.5 ±13.5 V ±13 ±13 ±13 ±13 V 3 30 30 0.6 30 0.6 30 0.6 MΩ 0.6 mA Note 3: Guaranteed by design, characterization or correlation to othertested parameters. Note 4: ±5V ≤ VS ≤ ±20V preirradiation, ±5V ≤ VS ≤ ±15V postirradiation, unless otherwise noted. Note 5: VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted. Note 6: 25°C ≤ TA ≤ 125°C. rh108afc 2 RH108A TABLE 2: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group C and D End Point Electrical Parameters (Method 5005) PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures (including Delta parameters) of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. 1 *PDA applies to subgroup 1. See PDA Test Notes. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT 10k 15V 0.1μF 2 10k 8V 3 30pF 7 1 – 8 + 6 4 0.1μF –15V REVISION HISTORY RH108A TDBC (Revision history begins at Rev C) REV DATE DESCRIPTION C 11/10 Note 4 revised and added to Power Supply Rejection Ratio. PAGE NUMBER 2 rh108afc Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH108A TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage Input Bias Current 6 V S = 15V VCM = 0V V S = 15V VCM = 0V 4 0.5 0 –0.5 –1.0 –1.5 2 0 –2 –4 10 100 TOTAL DOSE KRAD (Si) 1000 –1.0 1000 1 110 100 90 80 70 1000 Power Supply Rejection Ratio V S = 15V VCM = 13.5V 150 1000 160 POWER SUPPLY REJECTION RATIO (dB) COMMON MODE REJECTION RATIO (dB) 120 10 100 TOTAL DOSE KRAD (Si) 10 100 TOTAL DOSE KRAD (Si) RH108A G03 Common Mode Rejection Ratio 160 V S = 15V VOUT = 10V RL = 10k 1 –0.5 RH108A G02 Open-Loop Gain 130 0 –2.0 10 100 TOTAL DOSE KRAD (Si) 1 RH108A G01 140 0.5 –1.5 –8 1 V S = 15V VCM = 0V 1.0 –6 –2.0 OPEN-LOOP GAIN (V/mV) Input Offset Current 1.5 INPUT OFFSET CURRENT (nA) 1.0 INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (mV) 1.5 140 130 120 110 100 90 80 140 120 100 80 60 40 20 70 1 RH108A G04 10 100 TOTAL DOSE KRAD (Si) 1000 RH108A G05 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH108A G06 rh108afc 4 Linear Technology Corporation ID No. 66-10-0156 • LT 1110 REV C • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1989