IRF 50UQ03G

Bulletin PD-20681 09/04
50UQ03G
5.5 Amp
SCHOTTKY RECTIFIER
IF(AV) = 5.5Amp
VR = 30V
Description/ Features
Major Ratings and Characteristics
Characteristics
50UQ03G Units
The 50UQ03G I-PAK Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC board. Typical applications are in disk drives, switching
power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
IF(AV) Rectangular
waveform
5.5
A
VRRM
30
V
150°C TJ operation
IFSM @ tp = 5 µs sine
240
A
Unique I-PAK outline
Center tap configuration
VF
@ 5 Apk, TJ = 125°C
0.35
V
TJ
range
- 40 to 150
°C
Small foot print
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
50UQ03G
Base
Cathode
4, 2
1
3
Anode
Anode
I-PAK
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1
50UQ03G
Bulletin PD-20681 09/04
Voltage Ratings
Part number
VR
50UQ03G
Max. DC Reverse Voltage (V)
30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
50UQ...
IF(AV) Max. Average Forward Current
Units
5.5
A
Conditions
50% duty cycle @ TC = 136°C, rectangular wave form
* See Fig. 5
IFSM
Max. Peak One Cycle Non-Repetitive
240
Surge Current * See Fig. 7
100
5µs Sine or 3µs Rect. pulse
A
10ms Sine or 6ms Rect. pulse
EAS
Non-Repetitive Avalanche Energy
10
mJ
IAR
Repetitive Avalanche Current
2.0
A
50UQ...
Units
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 2.0 Amps, L = 5 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM
IRM
Conditions
Max. Forward Voltage Drop
0.46
V
@
* See Fig. 1
0.53
V
@ 10A
0.39
V
@
0.48
V
@ 10A
(1)
5A
5A
Max. Reverse Leakage Current
1.1
mA
TJ = 25 °C
* See Fig. 2
58
mA
TJ = 125 °C
TJ = TJ max.
(1)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VF(TO) Threshold Voltage
0.19
V
rt
Forward Slope Resistance
22.22
mΩ
CT
Typical Junction Capacitance
590
pF
VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C
LS
Typical Series Inductance
5.0
nH
Measured lead to lead 5mm from package body
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
50UQ... Units
TJ
Max. Junction Temperature Range (*) -40 to 150
°C
Tstg
Max. Storage Temperature Range
°C
RthJC Max. Thermal Resistance
-40 to 150
3.0
Conditions
°C/W DC operation
* See Fig. 4
Junction to Case
wt
Approximate Weight
Case Style
I-Pak
Device Marking
(*) dPtot
dTj
2
<
1
Rth( j-a)
0.3 (0.01) g (oz.)
Similar to TO-251SL
50UQ03G
thermal runaway condition for a diode on its own heatsink
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50UQ03G
Bulletin PD-20681 09/04
1000
Reverse Curent - I R (mA)
TJ= 150°C
100
125°C
10
100°C
1
75°C
50°C
0.1
25°C
0.01
0.001
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
10
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1000
Junct ion Ca pacitance - C T (pF)
Instantaneous Forward Curent - IF (A)
100
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ = 25°C
100
1
1.1
0
5
10
15
20
25
30
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
35
Thermal Impedance ZthJC (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.1
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
1
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
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50UQ03G
Bulletin PD-20681 09/04
3.5
DC
145
Average Power Loss (Watts)
Allowable Lead Temperature (°C)
150
140
135
Square wave (D = 0.50)
130 80% Rated Vr applied
125
see note (2)
2.5
0
1
2
3
4
5
6
7
8
9
Average Forward Current - I F(AV) (A)
Non-Repetitive Surge Current - IFSM (A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
RMSLimit
2
DC
1.5
1
0.5
0
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
3
0
1
2
3
4
5
6
7
8
Average Forward Current - I F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd REV = Inverse Power Loss = VR1 x I R (1 - D); IR @ VR1 = 80% rated VR
4
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50UQ03G
Bulletin PD-20681 09/04
Outline Table
Base
Cathode
4, 2
Modified JEDEC outline TO-262AA
Dimensions in millimeters and (inches)
1
3
Anode
Anode
Marking Information
PART NUMBER
G = Schottky Generation
EXAMPLE: THIS IS A 50UQ03G WITH
LOT CODE 5K3A
ASSEMBLED ON WW 12, 2000
IN ASSEMBLY LINE "A"
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INTERNATIONAL
RECTIFIER
LOGO
50UQ03G
012A
5K
ASSEMBLY
LOT CODE
3A
DATE CODE (YWWA)
YEAR 0 = 2000
WEEK 12
LINE A
5
50UQ03G
Bulletin PD-20681 09/04
Ordering Information Table
Device Code
50
U
Q
03
G
1
2
3
4
5
1
-
Current Rating
2
-
Package
3
-
Q = Schottky Q Series
4
-
Voltage Rating: Code x 10 = VRRM (03 = 30V)
5
-
Schottky Generation
3
U= I-PAK
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/04
6
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