Product Overview 2N5886: 25 A, 80 V NPN Bipolar Power Transistor For complete documentation, see the data sheet Product Description The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications. Features • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc • High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc • Pb-Free Packages are Available Part Electrical Specifications Product Compliance Status Polarity Type VCE(sat) Max (V) IC Continuo us (A) V(BR)CEO Min (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type 2N5886G Pb-free Active NPN General Purpose 1 25 80 20 100 4 200 TO-2042 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016