DDD_RH1021CMW-5_Fab_Lot_1022458_1_W13.pdf

DDD RH1021CMW-5 10222458.1 W13
Neutron Irradiation Test Results of the RH1021CMW-5
Precision 5V Reference
16 March 2015
Duc Nguyen, Sana Rezgui
Acknowledgements
The authors would like to thank the Product and Test Engineering Signal Conditioning
Groups from Linear Technology for the data collection pre- and post-irradiations. Special
thanks are also for Thomas Regan from University of Massachusetts, Lowell (UMASS)
for the help with the neutrons irradiation tests.
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DDD RH1021CMW-5 10222458.1 W13
Neutron Radiation Test Results of the RH1021CMW-5
Precision 5V Reference
Part Type Tested: RH1021CMW-5 Precision 5V Reference.
Traceability Information: Fab Lot# 10222458.1; Wafer # 13; Assembly Lot # 560218.1, D/C
1007A.
Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Serial
numbers 580 to 584, were placed in an anti-static bag during irradiation. Serial numbers 577 and
579 were used as control. See Appendix A for the radiation bias connection table..
Radiation Dose: Total fluence of 1E12 neutron/cm2.
Radiation Test Standard: MIL-STD-883 TM1017
Test Hardware and Software: LTX pre-rad test program: EQCM10215.02 and post-rad test
program: ERHC10215.00
Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI.
Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883
and MIL-STD-750.
SUMMARY
ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS
SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2.
ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST.
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1.0
Overview and Background
Neutron particles incident on semiconductor materials lose energy along their paths. The energy
loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice
(displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects
or broken bonds. Such defects elevate the energy level of the material and consequently change
material and electrical properties. The altering energy level creates the combination of any of the
following processes, thermal generation of electron-hole pairs, recombination, trapping,
compensation, tunneling, affecting hence the device’s basic features.
Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12
neutron/cm2. The neutron radiation test for the RH1021CMW-5 determines the change in device
performance as a function of neutrons’ fluence.
2.0
Radiation Facility:
Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the
Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265,
to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix B for the
certificate of dosimetry.
3.0
Test Conditions
Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing
was performed on the two control units to confirm the operation of the test system prior to the
electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices were placed
into an anti-static bag. Devices were then vertically aligned with the radiation source.
The criteria to pass the neutron displacement damage test is that five irradiated samples must
pass the datasheet limits. If any of the tested parameters of these five units do not meet the
required limits then a failure-analysis of the part should be conducted in accordance with method
5004, MIL-STD-883, and if valid the lot will be scrapped.
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4.0
Tested Parameters
The following parameters were measured pre- and post-irradiations:
-
Output Voltage (V)
Output Voltage Temperature Coefficient (ppm/°C)
Line Regulation with condition 7.2V ≤ VIN ≤ 10V (ppm/V)
Line Regulation with condition 10V ≤ VIN ≤ 40V (ppm/V)
Load Regulation (Sourcing Current) (ppm/mA)
Load Regulation (Sinking Current) (ppm/mA)
Supply Current (Series Mode) (mA)
Appendix C details the test conditions, minimum and maximum values at different accumulated
doses.
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5.0
Test Results
All five samples passed the post-irradiation electrical tests. All measurements of the seven listed
parameters in section 4.0 are within the specification limits.
The used statistics in this report are based on the tolerance limits, which are bounds to gage the
quality of the manufactured products. It assumes that if the quality of the items is normally
distributed with known mean and known standard deviation, the two-sided tolerance limits can be
calculated as follows:
+KTL = mean + (KTL) (standard deviation)
-KTL = mean - (KTL) (standard deviation)
Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit.
These tolerance limits are defined in a table of inverse normal probability distribution.
However, in most cases, mean and standard deviations are unknown and therefore it is practical
to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample
size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size
of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor
in this report is 2.742.
In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated
samples. The solid lines with square symbols are the computed KTL values of five post-irradiated
samples with the application of the KTL statistics. The orange solid lines with circle markers are
the datasheet specification limits.
The post-irradiation test limits are taken from the Linear Technology datasheet’s 100 Krads(Si)
specification limits.
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5.0150
Specification MAX
Vout @ VIN = 10V (V)
5.0100
Ps90%/90% (+KTL) Unbiased
5.0050
5.0000
Average Unbiased
4.9950
Ps90%/90% (-KTL) Unbiased
4.9900
Specification MIN
4.9850
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.1 Plot of VOUT @ VIN = 10V versus Total Fluence
Note: the pre-irradiation +KTL average is slightly higher than the maximum limit due to small
sample-size of 5 units.
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Table 5.1: Raw data table for VOUT of pre- and post-irradiation (1E12 N/cm2)
Parameter
Units
580
581
582
583
584
577
579
VOUT @ VIN = 10V
(V)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements) Unbiased
Specification MAX
Status (Measurements) Unbiased
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluences (N/cm2)
0
1E+12
5.00101
5.01020
5.00179
5.00990
5.00075
5.00910
4.99980
5.00810
5.00198
5.01040
5.00131
5.00120
5.00174
5.00170
5.00107
0.00088
5.00347
4.99866
4.9975
PASS
5.0025
PASS
5.00954
0.00094
5.01213
5.00695
4.9875
PASS
5.0125
PASS
PASS
FAIL
PASS
PASS
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25.00
Specification MAX
Temperature Coeff (ppm/C)
20.00
15.00
Ps90%/90% (+KTL) Unbiased
10.00
5.00
0.00
Average Unbiased
-5.00
-10.00
Ps90%/90% (-KTL) Unbiased
-15.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.2: Plot of VOUT Temperature Coefficient versus Total Fluence
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Table 5.2: Raw data table for VOUT Temperature Coefficient of pre- and post-irradiation (1E12
N/cm2)
Parameter
Units
580
581
582
583
584
577
579
VOUT Temperature Coefficient
(PPM)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements) Unbiased
Specification MAX
Status (Measurements) Unbiased
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluences (N/cm2)
0
1E+12
-1.00251 -2.04000
-2.99407 -3.83000
-5.13504 -5.96000
-4.26634 -5.23000
-4.95507 -5.94000
0.10959
-0.57700
2.04312
1.66000
-3.67061
1.71214
1.02409
-8.36530
-4.60000
1.67247
-0.01409
-9.18591
20
PASS
22
PASS
PASS
PASS
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Line Reg (ppm/V) @ VIN = 7.2V - 10V
16.00
Specification MAX
14.00
12.00
Ps90%/90% (+KTL) Unbiased
10.00
8.00
Average Unbiased
6.00
4.00
Ps90%/90% (-KTL) Unbiased
2.00
0.00
-2.00
0
5E+11
Total Fluences
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.3: Plot of Line Regulation @ VIN = 7.2V to 10V versus Total Fluence
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Table 5.3: Raw data table for Line Regulation @ VIN = 7.2V to 10V of pre- and post-irradiation
(1E12 N/cm2)
Parameter
Units
580
581
582
583
584
577
579
Line Reg @ VIN = 7.2V-10V
(ppm/V)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements) Unbiased
Specification MAX
Status (Measurements) Unbiased
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluences (N/cm2)
0
1E+12
0.01917
3.97143
0.01659
3.79286
-0.25142
3.52143
0.36896
4.55000
0.40129
4.79286
0.32812
0.16857
-0.07060 -0.32429
0.11092
0.27364
0.86123
-0.63940
4.12571
0.53030
5.57979
2.67164
12
PASS
15
PASS
PASS
PASS
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Line Reg (ppm/V) @ VIN = 10V to 40V
8.00
7.00
Specification MAX
6.00
5.00
Ps90%/90% (+KTL) Unbiased
4.00
3.00
Average Unbiased
2.00
1.00
Ps90%/90% (-KTL) Unbiased
0.00
-1.00
0
5E+11
Total Fluences
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.4: Plot of Line Regulation @ VIN = 10V to 40V versus Total Fluence
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Table 5.4: Raw data table for Line Regulation @ VIN = 10V to 40V of pre- and post-irradiation
(1E12 N/cm2)
Parameter
Units
580
581
582
583
584
577
579
Line Reg @ VIN = 10V to 40V
(ppm/V)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements) Unbiased
Specification MAX
Status (Measurements) Unbiased
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluences (N/cm2)
0
1E+12
-0.10949
0.67333
-0.03120
0.78667
-0.10897
0.70667
-0.09228
0.68000
-0.10050
0.81333
-0.12834 -0.08067
-0.08260 -0.08533
-0.08849
0.03279
0.00142
-0.17840
0.73200
0.06401
0.90753
0.55647
6
PASS
7
PASS
PASS
PASS
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25.00
Load Reg (Source) (ppm/mA)
Specification MAX
20.00
Ps90%/90% (+KTL) Unbiased
15.00
Average Unbiased
10.00
Ps90%/90% (-KTL) Unbiased
5.00
0.00
0
5E+11
Total Fluences
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.5: Plot of Load Regulation @ VIN = 10V versus Total Fluence
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Table 5.5: Raw data table for Load Reg. (Source) of pre- and post-irradiation (1E12 N/cm2)
Load Reg @ (Source)
Parameter
Total Fluences (N/cm2)
Units
(ppm/mA)
0
1E+12
580 Unbiased Irradiation
12.55468 7.92000
581 Unbiased Irradiation
12.62498 7.86000
582 Unbiased Irradiation
12.92092 8.42000
583 Unbiased Irradiation
12.69647 8.00000
584 Unbiased Irradiation
13.21816 8.04000
577 Control Unit
12.81485 7.98000
579 Control Unit
11.94882 7.32000
Unbiased Irradiation Statistics
Average Unbiased
12.80304 8.04800
Std Dev Unbiased
0.26971
0.21936
Ps90%/90% (+KTL) Unbiased
13.54258 8.64949
Ps90%/90% (-KTL) Unbiased
12.06350 7.44651
Specification MIN
Status (Measurements) Unbiased
Specification MAX
20
20
Status (Measurements) Unbiased
PASS
PASS
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
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120
Load Reg (Sink) (ppm/mA)
Specification MAX
100
Ps90%/90% (+KTL) Unbiased
80
Average Unbiased
60
Ps90%/90% (-KTL) Unbiased
40
20
0
0
5E+11
1E+12
Total Fluences
(neutrons/cm2)
1.5E+12
Figure 5.6: Plot of Load Reg (Sink) versus Total Fluence
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Table 5.6: Raw data table for Load Reg (Sink) of pre- and post-irradiation (1E12 N/cm2)
Load Reg (Sink)
Parameter
Total Fluences (N/cm2)
Units
(ppm/mA)
0
1E+12
580 Unbiased Irradiation
61.78642 64.80000
581 Unbiased Irradiation
62.48580 65.60000
582 Unbiased Irradiation
62.03612 65.60000
583 Unbiased Irradiation
59.28658 62.60000
584 Unbiased Irradiation
63.45256 67.00000
577 Control Unit
61.94730 63.40000
579 Control Unit
58.19030 59.40000
Unbiased Irradiation Statistics
Average Unbiased
61.80950 65.12000
Std Dev Unbiased
1.54710
1.61617
Ps90%/90% (+KTL) Unbiased
66.05164 69.55153
Ps90%/90% (-KTL) Unbiased
57.56735 60.68847
Specification MIN
Status (Measurements) Unbiased
Specification MAX
100
100
Status (Measurements) Unbiased
PASS
PASS
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
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1.30
Specification MAX
Iq @ VIN = 10V (mA)
1.20
1.10
Ps90%/90% (+KTL) Unbiased
1.00
0.90
Average Unbiased
0.80
Ps90%/90% (-KTL) Unbiased
0.70
0.60
0
5E+11
1E+12
1.5E+12
Total Fluence (neutrons/cm2)
Figure 5.7: Plot of Iq @ VIN = 10V versus Total Fluence
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Table 5.7: Raw data table for Supply Current of pre- and post-irradiation (1E12 N/cm2)
Parameter
Units
580
581
582
583
584
577
579
IQ @ VIN = 10V
(mA)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements) Unbiased
Specification MAX
Status (Measurements) Unbiased
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluences (N/cm2)
0
1E+12
0.79265
0.76300
0.80302
0.77400
0.78114
0.75300
0.79130
0.76600
0.75585
0.72900
0.78836
0.78500
0.81419
0.81200
0.78479
0.01794
0.83398
0.73560
0.75700
0.01736
0.80461
0.70939
1.2
PASS
1.2
PASS
PASS
PASS
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Appendix A
Radiation Bias Connection Table
Table A1: Unbiased condition
Pin
1
2
3
4
5
6
7
8
Function
NC
VIN
NC
GND
TRIM
VOUT
NC
NC
Bias
Float
Float
Float
Float
Float
Float
Float
Float
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Figure A1: Pin-Out
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Appendix B
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Appendix C
Table C1: Electrical Characteristics of Device-Under-Test
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