DDD_RH1009MW_Fab_Lot_WP1399_1_W5.pdf

DDD RH1009MW WP1399.1 W5
Neutron Irradiation Test Results of the RH1009MW
2.5V Reference
19 March 2015
Duc Nguyen, Sana Rezgui
Acknowledgements
The authors would like to thank the Signal Conditioning Product and Test Engineering
Group from Linear Technology for the data collection pre- and post-irradiations. Special
thanks are also for Thomas Regan from University of Massachusetts, Lowell (UMASS)
for the help with the neutrons irradiation tests.
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DDD RH1009MW WP1399.1 W5
Neutron Radiation Test Results of the RH1009MW 2.5V
Reference
Part Type Tested: RH1009MW 2.5V Reference
Traceability Information: Fab Lot# WP1399.1; Wafer # 5; Assembly Lot # 601397.1, Date Code
1047A. See photograph of unit under test in Appendix A.
Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Serial
numbers 335-339 were placed in an anti-static foam during irradiation. Serial numbers 345 and
346 were used as control. See Appendix B for the radiation bias connection tables.
Radiation Dose: Total fluence of 1E12 neutron/cm2.
Radiation Test Standard: MIL-STD-883 TM1017 and Linear Technology RH1009 I.D. No. 6610-0174 Rev. C 0607.
Test Hardware and Software: LTX test program EQ1CR136.00
Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI.
Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883
and MIL-STD-750.
SUMMARY
ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS
SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2.
ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST.
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1.0
Overview and Background
Neutron particles incident on semiconductor materials lose energy along their paths. The energy
loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice
(displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects
or broken bonds. Such defects elevate the energy level of the material and consequently change
material and electrical properties. The altering energy level creates the combination of any of the
following processes, thermal generation of electron-hole pairs, recombination, trapping,
compensation, tunneling, affecting hence the devices’ basic features.
Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12
neutron/cm2. The neutron radiation test for the RH1009MW determines the change in device
performance as a function of neutrons’ fluence.
2.0
Radiation Facility:
Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the
Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265,
to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix C for the
certificate of dosimetry.
3.0
Test Conditions
Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing
was performed on the two control units to confirm the operation of the test system prior to the
electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices were placed
into an anti-static bag. Devices were then vertically aligned with the radiation source.
The criteria to pass the neutron displacement damage test is that five irradiated samples must
pass the datasheet limits. If any of the tested parameters of these five units do not meet the
required limits then a failure-analysis of the part should be conducted in accordance with method
5004, MIL-STD-883, and if valid the lot will be scrapped.
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4.0
Tested Parameters
The following parameters were measured pre- and post-irradiations:
-
Reverse Breakdown Voltage Vz (V)
Reverse Breakdown Voltage Change with Current ∆Vz/∆Iz (mV)
Reverse Dynamic Impedance rz (Ω)
Appendix D details the test conditions, minimum and maximum values at different accumulated
doses.
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5.0
Test Results
All five samples passed the post-irradiation electrical tests. All measurements of the three listed
parameters in section 4.0 are within the specification limits.
The used statistics in this report are based on the tolerance limits, which are bounds to gage the
quality of the manufactured products. It assumes that if the quality of the items is normally
distributed with known mean and known standard deviation, the two-sided tolerance limits can be
calculated as follows:
+KTL = mean + (KTL) (standard deviation)
-KTL = mean - (KTL) (standard deviation)
Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit.
These tolerance limits are defined in a table of inverse normal probability distribution.
However, in most cases, mean and standard deviations are unknown and therefore it is practical
to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample
size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size
of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor
in this report is 2.742.
In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated
samples. The solid lines with square symbols are the computed KTL values of five post-irradiated
samples with the application of the KTL statistics. The orange solid lines with circle markers are
the datasheet specification limits.
The post-irradiation test limits are using Linear Technology datasheets 100 Krads(Si) specification
limits.
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2.506
Reverse Breakdown Voltage (V) @ 1mA
Specification MAX
2.504
Ps90%/90% (+KTL) Unbias
2.502
2.5
Average Unbias
2.498
Ps90%/90% (-KTL) Unbias
2.496
Specification MIN
2.494
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.1 Plot of Reverse Breakdown Voltage Vref versus Total Fluence
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Table 5.1: Raw data table for Reverse Breakdown Voltage of pre- and post-irradiation (1E12
N/cm2) including the statistical calculations, maximum specification, and the status of the test
(PASS/FAIL).
Parameter Reverse Breakdown Voltage @1mA Total Fluences (N/cm 2 )
Units
(V)
0
1E+12
335 Unbias Irradiation
2.49930
2.4994
336 Unbias Irradiation
2.49987
2.5011
337 Unbias Irradiation
2.49917
2.5010
338 Unbias Irradiation
2.49714
2.4990
339 Unbias Irradiation
2.50158
2.5028
345 Control Unit
2.50212
2.5021
346 Control Unit
2.50222
2.5022
Unbias Irradiation Statistics
Average Unbias
2.49941
2.50064
Std Dev Unbias
0.00159
0.00151
Ps90%/90% (+KTL) Unbias
2.50378
2.50477
Ps90%/90% (-KTL) Unbias
2.49504
2.49651
Specification MIN
2.495
2.495
Status (Measurements)
PASS
PASS
Specification MAX
2.505
2.505
Status (Measurements)
PASS
PASS
Status (-KTL) Unbias
Status (+KTL) Unbias
PASS
PASS
PASS
PASS
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∆VZ/IZ (mV) @ 400uA ≤ IR ≤ 10mA (mV)
-2.00
-3.00
Ps90%/90% (+KTL) Unbias
-4.00
-5.00
Average Unbias
-6.00
-7.00
Ps90%/90% (-KTL) Unbias
-8.00
-9.00
Specification MIN
-10.00
-11.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.2: Plot of Delta VZ/Iz versus Total Fluence
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Table 5.2: Raw data table for Delta VZ/IZ of pre- and post-irradiation (1E12 N/cm2) including the
statistical calculations, maximum specification, and the status of the test (PASS/FAIL).
Parameter
Units
335
336
337
338
339
345
346
Delta VZ/IZ @ IR=400uA TO 10mA Total Fluence (N/cm 2)
(mV)
0
1E+12
Unbias Irradiation
-3.90911 -4.22287
Unbias Irradiation
-3.47710 -4.35066
Unbias Irradiation
-4.03786 -4.80652
Unbias Irradiation
-3.35693 -4.14276
Unbias Irradiation
-3.49522 -4.56238
Control Unit
-3.47233 -3.55148
Control Unit
-3.53909 -3.57533
Unbias Irradiation Statistics
Average Unbias
-3.65524 -4.41704
Std Dev Unbias
0.29882
0.26933
Ps90%/90% (+KTL) Unbias
-2.83588 -3.67854
Ps90%/90% (-KTL) Unbias
-4.47461 -5.15554
Specification MIN
-6
-10
Status (Measurements)
PASS
PASS
Specification MAX
Status (Measurements)
Status (-KTL) Unbias
Status (+KTL) Unbias
PASS
PASS
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Reverse Dynamic Impedance (Ohm)
1.100
1.000
Specification MAX
0.900
0.800
Ps90%/90% (+KTL) Unbiased
0.700
0.600
Average Unbiased
0.500
0.400
Ps90%/90% (-KTL) Unbiased
0.300
0.200
0
5E+11
1E+12
Total Fluences
(neutrons/cm2)
1.5E+12
Figure 5.3: Plot of Reverse Dynamic Impedance RZ versus Total Fluence
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Table 5.3: Raw data table for Reverse Dynamic Impedance of pre- and post-irradiation (1E12
N/cm2) including the statistical calculations, minimum specification, maximum specification, and
the status of the test (PASS/FAIL).
Reverse Dynamic Impedance
Parameter
Total Fluences (N/cm2)
Units
(Ohms)
0
1E+12
335 Unbiased Irradiation
0.39091
0.42229
336 Unbiased Irradiation
0.34771
0.43507
337 Unbiased Irradiation
0.40379
0.48065
338 Unbiased Irradiation
0.33569
0.41428
339 Unbiased Irradiation
0.34952
0.45624
345 Control Unit
0.34723
0.35515
346 Control Unit
0.35391
0.35753
Unbiased Irradiation Statistics
Average Unbiased
0.36552
0.44170
Std Dev Unbiased
0.02988
0.02693
Ps90%/90% (+KTL) Unbiased
0.44746
0.51555
Ps90%/90% (-KTL) Unbiased
0.28359
0.36785
Specification MIN
Status (Measurements) Unbiased
Specification MAX
0.6
1
Status (Measurements) Unbiased
PASS
PASS
Status (+KTL) Unbiased
Status (-KTL) Unbiased
PASS
PASS
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Appendix A
Pictures of one among five samples used in the test.
Figure A1: Top View showing part number and date code
Figure A2: Bottom View showing serial number
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Appendix B
Radiation Bias Connection Table
Table B1: Unbiased condition
Pin
Function
Connection
1
2
3
NC
NC
NC
VNC
NC
ADJ
V+
NC
NC
Float
Float
Float
Float
Float
Float
Float
Float
Float
Float
4
5
6
7
8
9
10
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Figure B1: Pin-Out
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Appendix C
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Appendix D
Table D1: Electrical Characteristics of Device-Under-Test
Parameter
Vz
Delta Vz/I z
rz
Pre-irradiation
MIN
MAX
10 Krad(Si)
MIN
MAX
20 Krad(Si)
MIN
MAX
50 Krad(Si)
MIN
MAX
100 Krad(Si)
MIN
MAX
200 Krad(Si)
MIN
MAX
Units
2.495 2.505
2.495 2.505
2.495 2.505
2.495 2.505
2.495 2.505
2.495 2.505
V
6
6
6
8
10
12
mV
0.6
0.6
0.6
0.8
1.0
1.4
ohm
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