PD - 94895A
IRLML5203PbF
l
l
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HEXFET® Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
VDSS
RDS(on) max (mW)
ID
-30V
98@VGS = -10V
-3.0A
165@VGS = -4.5V
-2.6A
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
G 1
3 D
S
2
Micro3TM
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
100
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
11/8/04
IRLML5203PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
9.5
2.3
1.6
12
18
88
52
510
71
43
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, I D = -1mA
98
VGS = -10V, ID = -3.0A
mΩ
165
VGS = -4.5V, ID = -2.6A
-2.5
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -3.0A
-1.0
VDS = -24V, VGS = 0V
µA
-5.0
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
14
ID = -3.0A
3.5
nC
VDS = -24V
2.4
VGS = -10V
–––
VDD = -15V
–––
ID = -1.0A
ns
–––
R G = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-1.3
-24
–––
–––
–––
–––
17
12
-1.2
26
18
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRLML5203PbF
100
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
1
-2.70V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
-2.70V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
10
TJ = 150 ° C
1
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
3.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
0.1
2.0
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
7.0
ID = 3.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML5203PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
600
Ciss
400
200
Coss
Crss
0
1
10
20
-VGS , Gate-to-Source Voltage (V)
800
VDS =-24V
VDS =-15V
16
12
8
4
0
100
ID = -3.0A
0
4
8
12
16
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.8
10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML5203PbF
3.0
VDS
-ID , Drain Current (A)
VGS
D.U.T.
RG
2.0
RD
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
TC , Case Temperature ( ° C)
10%
150
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.14
0.13
0.12
0.11
0.10
ID = -3.0A
0.09
0.08
0.07
4.0
6.0
8.0
10.0
12.0
14.0
16.0
-V GS, Gate -to -Source Voltage (V)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRLML5203PbF
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
4
8
12
16
-I D , Drain Current (A)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLML5203PbF
30
20
ID = -250µA
Power (W)
-VGS(th) , Variace ( V )
2.5
2.0
10
0
1.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRLML5203PbF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
C B A
D
E
E1
e
5
B
e
A
A1
A2
b
c
E
E1
1
DIMENS IONS
e1
L
L1
0
aaa
e1
bbb
ccc
4
MILLIMET ERS
MAX
MIN
1.12
0.89
0.10
0.01
1.02
0.88
0.30
0.50
0.20
0.08
3.04
2.80
2.64
2.10
1.40
1.20
INCHES
MIN
MAX
.036
.044
.0004
.0039
.035
.040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048
.055
0.95 BS C
1.90 BS C
0.40
0.60
.0375 BS C
.075 B S C
.0158
.0236
0.25 BS C
0°
8°
0.10
0.20
.0118 BS C
0°
8°
.004
.008
0.15
.006
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 S URF
0
7
3X L
RECOMMENDED FOOT PRINT
NOTE S
1. DIME NSIONING AND T OLE RANCING PER AS ME Y14.5M-1994.
0.972
3X [.038]
2. DIME NSIONS AR E S HOWN IN MIL LIME TE RS AND INCHES .
2.742
[.1079]
3. CONTR OL LING DIMENS ION: MILLIME T ER.
4 DAT UM PL ANE H IS LOCAT E D AT T HE MOL D PARTING LINE.
5 DAT UM A AND B TO BE DE T ERMINE D AT DATUM PLANE H.
6 DIME NSIONS D AND E 1 ARE ME AS URED AT DATUM PLANE H.
7 DIME NSION L IS T HE L EAD LE NGT H FOR S OLDER ING T O A SUBS TR AT E.
8. OUT LINE CONFORMS T O JE DEC OUT LINE T O-236AB.
0.95
[.0375]
3X
0.802
[.031]
1.90
[.075]
Micro3 (SOT-23/TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
PART NUMBER
Y = YEAR
W = WEEK
LOT
CODE
PART NUMBER CODE REF ERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
8
IRLML2402
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LET TER
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
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IRLML5203PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
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9