SEE_Test_Report_RH3845.pdf

Heavy-Ion Test Report of the Radiation Hardened High Voltage
Synchronous Step-Down Controller MSK5055RH
Abbreviated Report, Revision “b”
Sana Rezgui1, Paul Musil2, Bryan Horton2, Fred Freytag2, Tom Sheehan1, Jeff Witt1, and Rocky
Koga3
1Linear
Technology, 2Anaren Inc. - MSK Products, 3The Aerospace Corporation
Acknowledgements
The authors would like to thank Steve Bielat and Jeffrey George from The Aerospace Corporation
for their assistance with the beam experiments. Also, special thanks for the Aerospace Corporation
team, mainly David Meshel, and Rocky Koga, for their expediting these experiments.
Please contact Linear Technology if you wish to receive the full SEE test report of the
MSK5055RH.
1
Executive Summary
This report summarized the heavy-ion test experiments performed on the MSK5055-1RH [3] at the
Lawrence Berkeley National Labs (LBNL). The MSK5055-1RH is a hermetically packaged MIL-PRF38534 qualified hybrid microcircuit manufactured with the RH3845MKDICE, a Radiation Hardened High
Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency [1, 3].
Heavy-ion induced Single Event Effect (SEE) experiments included Single Event Transient (SET), Single
Event Upset (SEU) and Single Event Latchup (SEL) tests up to an LET of 117.6 MeV.cm2/mg, at room as
well as at elevated temperatures (to case temperatures of 100°C). At the tested input voltages less than or
equal to 30V, the MSK5055-1RH showed sensitivities only to SETs up to an LET of 117.6 MeV.cm2/mg.
The measured SET sensitive saturation cross-section was about 3.4x10-4 cm2, about 4% of the total die’s
cross-section, while the SET threshold LET was about 2.4 MeV.cm2/mg. For input voltages of 40V, 50V
and 60V, destructive events were seen at LET of 58.78 MeV.cm2/mg.
With input voltages less than or equal to 30V, up to an LET of 117.6 MeV.cm2/mg, the SET pulse widths
were less than 40 us, and their delta amplitudes varied between -110mV and +20mV. The 20 mV positive
amplitudes were due to slightly under-damped control loop recovery following the occurrence of the
negative SET, the original effect created by the ion bombardment. However, for SEE tests with input
voltages greater than or equal to 40V, negative SETs as well as positive SETs have been observed (at an
input voltage of 60V). The amplitude of the first positive SET was about 200mV while the second one was
about 400 mV and was destructive to the application circuit.
These results may vary with the selected peripheral component characteristics. To approximate circuit
performance using the selected peripheral component parasitic, Linear Technology Inc. recommends that
the designer simulates their design by injecting SETs at the circuit’s inputs/outputs, as wide as the observed
SETs in this report. This can be accomplished using the LTSpice tool offered by Linear Technology. Most
of the Linear LT parts spice models are offered [4].
2
1. Overview
This report details the heavy-ion test experiments performed on the MSK5055-1RH [3] at the Lawrence
Berkeley National Labs (LBNL). The MSK5055-1RH is a hermetically packaged MIL-PRF-38534
qualified hybrid microcircuit manufactured with the Radiation Hardened RH3845MKDICE [1, 2]. This RH
DICE is a high voltage, synchronous, current mode controller for medium to high power, high efficiency
supplies. It offers a wide 4 to 60V input range (7.5V minimum start-up voltage), with adjustable fixed
operating frequency synchronizable to an external clock for noise sensitive applications and gate drivers
capable of driving large N-channel MOSFETs. Additional features include a precision undervoltage
lockout, low shutdown current, short-circuit protection, and programmable soft-start. The wide input range,
programmable output voltage and switching frequency, make these regulators suitable for a wide variety of
medium to high power applications. The adjustable operating frequency provides the flexibility to keep the
switching noise out of sensitive frequency bands, and when synchronized, can be ganged out of phase with
other controllers for reduced noise and component size.
The RH3845MKDICE wafer lots are processed to Linear Technology's in house Class S flow to yield
circuits usable in stringent military and space applications. The MSK5055RH is manufactured using the
RH3845MKDICE and is hermetically sealed in a 16 pin flatpack available with straight or gull wing leads.
More details are given about this RH-Controller in [1-3]. This is a 4µm technology using exclusively bipolar
transistors. The part’s block diagram is shown in Fig. 1. The package pin designation is given in Fig. 2.
Absolute Maximum Ratings
(Note 1)
Vin Input Voltage
VBOOST BOOST Voltage (BOOST)
SW Switch Voltage
Differential Boost Voltage (BOOST TO SW)
VCC Bias Supply Voltage
VSENSE SENSE+ and SENSE- Voltages
Differential Sense Voltage
SYNC, VC, VFB, CSS and SHDN
SHDN Pin Currents
Lead Temperature Range
(10 Seconds)
Operating Junction Temperature Range
Storage Temperature Range
ESD Rating
65V
80V
65V, –2V
24V
24V
40V
+/-1V
5V
1mA
300°C
–55°C to 125°C
–65°C to 150°C
1C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to
any Absolute Maximum Rating condition for extended periods may affect device reliability.
3
Fig. 1: Block Diagram of the RH3845MKDICE and the required peripherals for the Controller Operation
Fig. 2: MSK5055RH PIN-OUT
4
The MSK5055RH is offered in two versions -1 and -2 allowing two different operational modes at light
loads. The different modes are internally configured at the MSK factory and are identified by the “dash
number.”
Part Number
MSK5055-1RH
MSK5055-2RH
Mode Internal Connection
VFB
VCC
Reverse Current Mode
Disabled (DCM)
Enabled (CCM)
MSK5055-1RH disables the reverse current capability at light loads. This configuration is more efficient
than configuration “-2.” It allows the inductor current to go discontinuous and the PWM will skip pulses to
maintain regulation at light loads. This configuration will have a minimum load current requirement,
typically 1mA. MSK5055-2RH allows reverse current in the synchronous switch at light loads. This
configuration is less efficient at light loads but operates in continuous conduction mode at light loads. Only
the MSK5055-1RH has been evaluated in these Heavy Ion tests. For SEE data on the MSK5055-2RH
configured in the CCM mode, the user is advised to refer to the MSK5063RH SEE test report [5].
Table 1 summarizes the parts’ features and the electrical test equipment.
Table 1: MSK5055-1RH Test and Part’s Information
Generic Part Number
Package Marking
Manufacturer
Quantity tested
Dice Dimension
Part Function
Part Technology
Package Style
Test Equipment
Temperature and Tests
MSK5055-1RH
MSK5055-1RH
Fabrication Lot: WD005797.1
Anaren Inc. - MSK products / Linear Technology
3
124 mils x 113 mils≈ 9.04 mm2
Radiation Hardened High Voltage Synchronous
Current Mode Step-Down Controller with
Adjustable Operating Frequency
BIPU405 (4um)
Hermetically sealed 16-Pin Flatpack
Power supply, oscilloscope, multimeter, Decade
Resistive Load Box, and computer
SET, SEU and SEL @ Room Temp. and 100°C
5
2. Test Setup
Custom SEE boards were built for heavy-ion tests by the MSK team. The MSK5055-1RH parts were tested
at LBNL on June 17 & 18, 2014 at two different temperatures; at room temperature and at case temperature
of 100°C. The junction temperature was indirectly monitored and controlled. Temperature control is
provided by the conductive cooling plate and the external adjustable heating element within the test setup.
The SEE board contains:
-
The DUT (MSK5055-1RH) with open-top (package de-capped)
The input and output filtering capacitors
Two FDD8632 N-channel MOSFETs
The 2N3904 bipolar transistor to sense the board’s temperature, placed as close as possible to the
DUT.
Fig. 5 shows the SEE test board schematics. The test board BOM and configuration details are available by
request. The photograph of this test board, as used in the testing, is given in Fig. 6.
Fig. 5: Schematics of the MSK5055-1RH SEE Test Board
6
To minimize the distortion of the measured SET pulse-width (PW), the test setup was placed as close as
possible to the vacuum chamber.
The SW (output switch signal), VC (output of the error amplifier) and VOUT (output) signals were connected
each to a scope channel. In this case, the capacitive load of the cable was about 120pF. The scope was set
with 1MOhms termination.
Fig. 6: Photograph of the MSK5055-1RH SEE Test Board showing the open-top DUT and the cooling
plate underneath the SEE boards added to dissipate the heat through conduction in the Heavy-Ion
Vacuum Chamber
7
3. Heavy-Ion Beam Test Conditions
The selected beam energy is 10MeV/nucleon, which correlates with beam ions delivered at a rate of 7.7
MHz (eq. to a period of 130 ns).
The higher the beam’s frequency or the flux; the higher is the likelihood to have more than one particle
hitting the DUT in a very short time (within hundreds of nanoseconds.) To avoid overlapping of events, it
is important then that the error-events last less than 130 ns or that the flux is much reduced.
The recovery time of the DUT output following an ion strike determines the maximum test flux. The closed
loop response of the DUT is determined, in part, by the frequency compensation network attached to the
Vc pin. Monitoring this pin in situ was required to identify the causal relationship between an ion strike and
resulting SEE. A consequence of this monitoring requirement is an additional parasitic load due to
interconnect cabling. It is estimated that an additional capacitive load of approximately 120pF was present
on the Vc pin during these Heavy Ion experiments.
The run fluxes are reported in Table 5. During runs where high fluence was required, beam flux was also
high to keep test times reasonable. There is a higher probability of overlapping events during the high flux
runs.
8
4. Radiation Test Results
Heavy-ion SEE experiments included SET, SEU and SEL tests up to a Linear Energy Transfer (LET) of
117.6 MeV.cm2/mg at elevated temperatures (to case temperatures of 100°C). In 46 runs, the MSK50551RH parts were irradiated with various input voltages, ranging between 10 and 60V, two different output
voltage biases (15V and 3.3V), and at three different loads (1A, 1.1A and 3.3A). The input/output bias
voltages and load settings are summarized in Table 2. All the raw radiation test results are provided in Table
5.
Table 2: MSK5055-1RH Test Bias Conditions (Input, and Output Voltages and Load Currents)
VIN
(V)
10
15
10
15
30
40
50
60
VOUT
(V)
3.3
3.3
3.3
3.3
15
15
15
15
IOUT
(A)
1.1
1.1
3.3
3.3
1
1
1
1
RLoad
(Ohms)
3
3
1
1
15
15
15
15
For SET detection, the scope was set to trigger on positive and negative SETs as a result of a change in the
output signal VOUT exceeding +/-10 mV (+/-0.3 %). The pulse widths were however calculated based on
+/-20mV levels. Positive amplitudes lower than 20mV were observed after the negative SETs because of
ripple effect on the output signal. Hence, the reported SET-PW is always smaller than the SET base width
(from the time it starts till it ends). All the waveforms were saved during the beam tests and are available
to the reader per his/her request.
Since destructive events have been seen for input voltages equal or higher than 40V input voltage, the beam
data will be presented in two subsections: 4.1) VIN equal or less than 30V and 4.2) VIN equal or greater than
40V.
9
4.1
Beam Test Results with Vin equal or less than 30V: No Destructive Events Nor SELs
For an input voltage equal or less than 30V, neither SEU nor SEL nor destructive events have been observed
during all the tests; all detected events were SET, negative transients, with various pulse amplitudes and
widths that depended on the LET, as shown below in Appendix A. Furthermore, the negative going output
transient lasted for less than 40 microseconds in all cases and were followed by small positive amplitude
recovery overshoot (less than 20mV), as shown in Fig. 8. It can be observed that the underlying SET is a
truncated and then skipped switch node pulse, total duration < 5µS. The DUT control loop then takes ≈35µS
to recover and settle. This information can be used to appropriately size the output filtering components to
satisfy a particular application’s requirements. Under Xenon ions, Figs. 9 and 10 show examples of
cumulative distributions of the SET amplitudes and widths with the beam run time, while Fig. 11 shows
the SET pulse-amplitudes versus the SET pulse-widths.
Additionally, all of the negative transients were small in amplitude (less than 160 mV) and were initiated
at the SW output signal and then seen on the Vc and VOUT output signal. The VOUT SET waveform shapes
are dependent on the LC filtering circuitry (L1 & C7-12 of Fig. 5) and loading. Given the low level of SET
effect, no additional mitigation techniques will be needed and the current application circuit may be used
AS IS. It should be noted that the application circuits herein were developed primarily to overcome the
numerous challenges of conducting Heavy Ion experiments while achieving full range operation from the
extremely flexible MSK5055RH. Most real applications operate within well defined and narrower
conditions. This enables various performance optimizations.
10
Vout (V)
Fig. 8: Negative SET Pulse vs. Beam Time on SW, Vc, VOUT output signals, Run 28, Waveform 4
-
% Cumulative Distribution
Negative SET Amplitude on VOUT
100%
Positive SET Amplitude on VOUT
10%
1%
0%
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.05
0.10
SET Amp. Relative to Vout Nominal Values(V)
Fig. 9: % Cumulative Distributions vs. SET Pulse-Amplitudes
Runs# (30, 33, 41, 42); Vin=30V, Vout=15V, Iout=1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
11
% Cumulative Distribution
100%
10%
Max Pos. SET-PW (Vout)
Max Neg. SET-PW (Vout)
1%
0%
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width (s)
Fig. 10: % Cumulative Distributions vs. SET Pulse-Widths
Runs# (30, 33, 41, 42); Vin=30V, Vout=15V, Iout=1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
SET Pulse Amplitude Relative to Initial Value (V)
0.1200
0.1000
Max Pos. SET-PW (Vout)
Max Neg. SET-PW (Vout)
0.0800
0.0600
0.0400
0.0200
0.0000
1.0E-06
1.0E-05
1.0E-04
SET Pulse Width(s)
Fig. 11: % SET Pulse-Amplitudes vs. SET Pulse-Widths
Runs# (30, 33, 41, 42); Vin=30V, Vout=15V, Iout=1A; Room Temp.; Xenon Ions with LET=58.78 MeV.cm2/mg
Furthermore, and as shown in Fig. 12, in all run heavy-ions beam experiments, the SET cross-sections
varied with the input/output voltages and the load current as well as with the used LETs. Application
specific parameters control the DUT power dissipation and hence its junction temperature. It is expected
that the SET cross section will vary accordingly.
12
SET Cross-Section of Single Events (cm2/MSK505-1RH)
1.E-02
1.E-03
1.E-04
MSK5055-1RH; Vin=10V; Vout=3.3V; Iout=1.1A
1.E-05
MSK5055-1RH; Vin=10V; Vout=3.3V; Iout=3.3A
MSK5055-1RH; Vin=15V; Vout=3.3V; Iout=1.1A
1.E-06
MSK5055-1RH; Vin=15V; Vout=3.3V; Iout=3.3A
MSK5055-1RH; Vin=30V; Vout=15V; Iout=1A
1.E-07
Weibull_Curve
1.E-08
0
20
40
60
80
100
120
140
LET (MeV.cm2/mg)
Fig. 12: Measured in-beam SET Cross-Sections vs. LET
4.2
Beam Test Results with Vin equal or greater than 40V
For heavy-ions tests with input voltage greater or equal to 40V, three DUTs have been used and were beamdamaged. The parts could not provide the output voltage after this detected destructive event. Visual
inspection revealed that the VIN and SGND bond wires had fused on two of the three failed devices. The
third device shows signs of thermal stress in the area near the VIN and SGND bond pads. Figures 15 and
16 both exhibit a sharp transient input current spike. This evidence suggests SEL occurred on the input side
of the controller die. For applications operating above 30V, a simple voltage dropping network connected
to the VIN pin may be sufficient to preclude destructive SEL and would have negligible impact on
performance. Table 3 summarizes the test conditions in which this radiation effect happened. For instance,
in the case where the input voltage was set at 60V (Run 4), in addition to the negative SETs, two consecutive
positive SETs were also observed, after which the output voltage dropped permanently from 14.8V to
14.34V. Fig. 13 (Waveform 3) and Fig. 14 (Waveform 4) display the two SET shapes captured by the scope
consecutively.
Table 3: Beam Bias Test Conditions during the Destructive Events
Under Xenon Ions, LET (0˚) = 58.78 MeV.cm2/mg
Run#
LET
(MeV.cm2/mg)
VIN (V)
VOUT (V)
IOUT (V)
Observed Destructive Effect
4-DUT1
58.78
60
15
1
Fig. 13: VOUT dropped permanently from 14.76V to 14.34V
32-DUT2
58.78
40
15
1
Fig. 15: Input Current dropped from 421mA to about 10mA
13
46-DUT3
117.6
50
15
1
Fig. 16: Input Current dropped from 346mA to about 2mA
10V/div
Fig. 13: Positive SET Pulse vs. Beam Time on VOUT, SW and VC signals, respectively. Run 4, Wfr. #3
14
10V/div
Fig. 14: Positive SET Pulse vs. Beam Time on VOUT, SW and VC signals, respectively. Run 32
Furthermore, Fig. 15 and Fig. 16 show the input current and the sensed input voltage versus beam time at
the time of the destructive event occurrence, with VIN=40V and with VIN=50V, respectively. In the case of
an input supply voltage of 40V, the input voltage dropped to 30V, and the input current increased from
15
0.421A to 5.52A. For an input supply voltage of 50V, the input voltage dropped to 37V and the input
current increased from 0.346A to 2.74A.
Fig. 15: Representation of the Sensed Controller Input Voltage and Input Current (w/o user intervention)
during the Destructive Event vs. Beam Time, Run 32
VIN=40V, IIN=0.421A; VOUT=15V; IOUT=1A, Room Temperature (Vacuum)
16
Fig. 16: Representation of the Sensed Controller Input Voltage and Input Current during the Destructive
Event vs. Beam Time, Run 46
VIN=50V, IIN=0.346A; VOUT=15V; IOUT=1A, Case Temp=100C
17
4.3
Weibull Parameters for Orbital Error-Rates Calculations
Fig. 12 shows the SET cross-sections at different test bias conditions and the Weibull curve, which fitting
parameters are provided in Table 4, as demonstrated in Eq. 4. Customers may use these parameters to
determine the MSK5055-1RH orbital error rates in their space flight designs.
Table 4: Weibull Parameters Used for the MSK5055-1RH SEE Cross-Section and the Calculation of
Orbital Error Rates
L0
(MeV / mg-cm2)
2.4
W
(MeV / mg-cm2)
35

 = 0 �1 −  −((−0 )/) �
S
2
σ0
(cm2)
3.4x 10-4
(4)
In summary, under heavy-ion irradiations, and at input voltages equal or less than 30V, the MSK50551RH showed sensitivities only to SETs. The measured underlying SET sensitive cross-section (all events
added) is about 3.4x10-4 cm2 (about 4% of the physical die cross-section), while the threshold LET is
about 2.4 MeV.cm2/mg.
4.4 SEL Immunity at Hot (100°C) (at 30V Input Voltage, 15 V Output Voltage and 1A Output
Current)
The SEL tests were run at output voltage of 15V, load current of 1A and at various input voltages 30V, 40V
and 50V. In the former two bias test conditions (30V (Runs 43-44) and 40V (Run 45)), at high temperature
(100°C) at the DUT case, the DUT did not exhibit any sensitivity to SELs up to an LET of 117.6
MeV.cm2/mg (red dot with arrow pointing down in Fig. 17). The SET cross-sections at 30V input voltage
at hot are shown in black dots. However, destructive event has been seen at 50V (Run 46) at low Xenon
fluence (107 particles/cm2) with LET of 117.6 MeV.cm2/mg.
18
SEL/SET Cross-Sections (cm2/MSK5055-1RH)
1.E-02
1.E-03
1.E-04
SEL-MSK5055-1RH; Vin=30V; Vout=15V; Iout=1A
1.E-05
SET-MSK5055-1RH; Vin=30V; Vout=15V; Iout=1A
1.E-06
SET_Weibull_Curve
1.E-07
1.E-08
1.E-09
0
20
40
60
LET
80
100
120
140
(MeV.cm2/mg)
Fig. 17: Measured SEL Cross-Sections vs. LET, showing the MSK5055-1RH immunity to Destructive
Events including SELs at VIN=30V, VOUT=15V, IOUT=1A
Arrows pointing down are indication of no observed SETs up to that fluence at tested LET
19
Table 5: Raw Data for the Heavy-Ion Beam Runs
Run
DUT
Tc
(Vacuum)
Vin
Vout
Iout
Total Effective
Fluence
Average Flux
Maximum Flux
Tilt Angle
Eff. LET
TID (Run)
TID (Cum.)
#
#
C
(V)
(V)
(A)
p/cm2
p/sec/cm2
p/sec/cm2
Degrees
MeV.cm2/mg
rads(Si)
rads(Si)
1
1
24
30
15.0
1
Xe 58.78
1.05E+05
3.36E+02
1.70E+03
0
58.8
9.88E+01
9.88E+01
178
2
1
24
30
15.0
1
Xe 58.78
7.57E+04
3.62E+02
4.69E+02
0
58.8
7.12E+01
1.70E+02
3
1
24
50
15.0
1
Xe 58.78
1.69E+05
3.61E+02
4.83E+02
0
58.8
1.59E+02
4
1
24
60
15.0
1
Xe 58.78
1.10E+04
1.12E+02
4.67E+02
0
58.8
5
2
24.5
10
3.3
1.1
Xe 58.78
6.98E+05
7.07E+02
2.56E+03
-0.1
6
2
24.5
10
3.3
1.1
Xe 58.78
7.72E+05
2.51E+03
3.08E+03
7
2
27
15
3.3
1.1
Xe 58.78
1.00E+06
2.26E+03
8
2
27
15
3.3
1.1
Ag 48.15
1.00E+06
9
2
27
10
3.3
1.1
Ag 48.15
10
2
27
10
3.3
1.1
11
2
27
15
3.3
12
2
27
15
13
2
27
14
2
15
Ion
SET
Dest.
Event
SET-XS
XS-SET
cm2/DUT
cm2/DU
T
0
1.70E-03
1.70E-03
107
0
1.41E-03
1.41E-03
3.29E+02
170
0
1.01E-03
1.01E-03
1.03E+01
3.41E+02
4
1
3.64E-04
3.64E-04
58.8
6.56E+02
6.56E+02
119
0
1.70E-04
1.70E-04
-0.1
58.8
7.26E+02
1.38E+03
107
0
1.39E-04
1.39E-04
2.94E+03
-0.1
58.8
9.40E+02
2.32E+03
90
0
9.00E-05
9.00E-05
3.98E+03
6.54E+03
-0.1
48.2
7.70E+02
3.09E+03
90
0
9.00E-05
9.00E-05
9.55E+05
4.18E+03
1.08E+04
-0.1
48.2
7.36E+02
3.83E+03
111
0
1.16E-04
1.16E-04
Kr 30.86
2.00E+06
5.01E+03
2.09E+04
-0.1
30.9
9.88E+02
4.82E+03
86
0
4.30E-05
4.30E-05
1.1
Kr 30.86
5.40E+06
5.20E+03
7.73E+03
-0.1
30.9
2.67E+03
7.48E+03
123
0
2.28E-05
2.28E-05
3.3
1.1
Cu 21.17
7.01E+06
1.48E+04
1.99E+04
-0.1
21.2
2.37E+03
9.86E+03
64
0
9.13E-06
9.13E-06
15
3.3
1.1
Cu 21.17
1.00E+07
1.83E+04
1.06E+05
-0.1
21.2
3.39E+03
1.32E+04
78
0
7.80E-06
7.80E-06
27
10
3.3
1.1
Cu 21.17
1.00E+07
5.52E+04
6.68E+04
-0.1
21.2
3.39E+03
1.66E+04
75
0
7.50E-06
7.50E-06
2
27
10
3.3
1.1
Ar 9.74
2.05E+07
3.18E+05
7.45E+05
-0.1
9.7
3.19E+03
1.98E+04
11
0
5.37E-07
5.37E-07
16
2
27
15
3.3
1.1
Ar 9.74
2.01E+07
5.20E+04
1.10E+05
-0.1
9.7
3.13E+03
2.30E+04
28
0
1.39E-06
1.39E-06
17
2
27
15
3.3
1.1
Ne 3.49
2.00E+07
5.61E+04
6.49E+04
-0.1
3.5
1.12E+03
2.41E+04
5
0
2.50E-07
2.50E-07
18
2
27
10
3.3
1.1
Ne 3.49
2.01E+07
6.33E+04
7.49E+04
-0.1
3.5
1.12E+03
2.52E+04
0
0
4.98E-08
4.98E-08
19
2
27
10
3.3
3.3
Ne 3.49
4.06E+06
4.47E+04
8.31E+04
-0.1
3.5
2.27E+02
2.54E+04
20
2
27
10
3.3
3.3
Ne 3.49
2.01E+07
8.28E+04
8.56E+04
-0.1
3.5
1.12E+03
2.65E+04
0
0
4.98E-08
4.98E-08
21
2
27
15
3.3
3.3
Ne 3.49
2.01E+07
8.28E+04
8.62E+04
-0.1
3.5
1.12E+03
2.77E+04
15
0
7.46E-07
7.46E-07
22
2
27
15
3.3
3.3
Ar 9.74
2.00E+07
3.40E+04
5.95E+04
-0.1
9.7
3.12E+03
3.08E+04
84
0
4.20E-06
4.20E-06
23
2
27
10
3.3
3.3
Ar 9.74
2.01E+07
3.80E+04
8.56E+04
-0.1
9.7
3.13E+03
3.39E+04
34
0
1.69E-06
1.69E-06
24
2
27
10
3.3
3.3
Cu 21.17
4.01E+06
6.09E+03
4.52E+04
-0.1
21.2
1.36E+03
3.53E+04
119
0
2.97E-05
2.97E-05
25
2
27
15
3.3
3.3
Cu 21.17
4.01E+06
1.18E+04
1.34E+04
-0.1
21.2
1.36E+03
3.66E+04
75
0
1.87E-05
1.87E-05
26
2
27
15
3.3
3.3
Kr 30.86
2.18E+06
4.92E+03
1.18E+04
-0.1
30.9
1.08E+03
3.77E+04
110
0
5.05E-05
5.05E-05
27
2
27
10
3.3
3.3
Kr 30.86
2.00E+06
4.97E+03
5.91E+03
-0.1
30.9
9.88E+02
3.87E+04
118
0
5.90E-05
5.90E-05
Invalid Run
20
Run
DUT
Tc
(Vacuum)
Vin
Vout
Iout
Ion
Total Effective
Fluence
Average Flux
Maximum Flux
Tilt Angle
Eff. LET
TID (Run)
TID (Cum.)
SET
Dest.
Event
SET-XS
XS-SET
p/cm2
p/sec/cm2
p/sec/cm2
Degrees
MeV.cm2/mg
rads(Si)
rads(Si)
#
#
cm2/DUT
cm2/DU
T
Xe 58.78
7.89E+05
1.05E+03
2.99E+03
-0.1
58.8
7.42E+02
3.94E+04
133
0
1.69E-04
1.69E-04
3.3
Xe 58.78
6.28E+05
6.88E+02
1.64E+03
-0.1
58.8
5.91E+02
4.00E+04
110
0
1.75E-04
1.75E-04
15.0
1
Xe 58.78
4.00E+05
3.10E+03
9.17E+03
0.5
58.8
3.76E+02
4.04E+04
157
0
3.93E-04
3.93E-04
30
15.0
1
Xe 58.78
1.01E+06
7.11E+03
8.66E+03
0.5
58.8
9.50E+02
4.14E+04
29
0
2.87E-05
2.87E-05
27
40
15.0
1
Xe 58.78
1.04E+05
6.82E+03
1.48E+04
0.5
58.8
9.78E+01
4.14E+04
3
27
30
15.0
1
Xe 58.78
9.37E+05
3.67E+03
4.13E+03
-0.1
58.8
8.81E+02
8.81E+02
176
0
1.88E-04
1.88E-04
34
3
27
30
15.0
1
Ag 48.15
6.40E+05
1.06E+03
2.25E+04
-0.1
48.2
4.93E+02
1.37E+03
107
0
1.67E-04
1.67E-04
35
3
27
30
15.0
1
Kr 30.86
1.00E+06
4.54E+03
5.40E+03
-0.1
30.9
4.94E+02
1.87E+03
125
0
1.25E-04
1.25E-04
36
3
27
30
15.0
1
Cu 21.17
1.98E+06
8.46E+03
2.20E+04
-0.1
21.2
6.71E+02
2.54E+03
184
0
9.29E-05
9.29E-05
37
3
42
30
15.0
1
Ar 9.74
5.03E+06
2.43E+04
3.71E+04
-0.1
9.7
7.84E+02
3.32E+03
32
0
6.36E-06
6.36E-06
38
3
42
30
15.0
1
Ne 3.49
1.01E+07
9.49E+04
1.44E+05
-0.1
3.5
5.64E+02
3.89E+03
0
0
9.90E-08
9.90E-08
39
3
74.5
30
15.0
3
Ne 3.49
6.20E+06
2.94E+04
3.52E+04
-0.1
3.5
3.46E+02
4.23E+03
135
0
2.18E-05
2.18E-05
40
3
39.5
30
15.0
1
Ne 3.49
1.00E+07
3.79E+04
4.27E+04
-0.1
3.5
5.58E+02
4.79E+03
0
0
1.00E-07
1.00E-07
41
3
39.5
30
15.0
1
Xe 58.78
9.01E+05
2.64E+03
4.10E+03
-0.1
58.8
8.47E+02
5.64E+03
171
0
1.90E-04
1.90E-04
42
3
44.5
30
15.0
1
Xe 58.78
3.17E+05
8.75E+02
1.72E+04
60
117.6
5.96E+02
6.23E+03
107
0
3.38E-04
3.38E-04
43
3
99.5
30
15.0
1
Xe 58.78
1.02E+07
2.38E+05
5.82E+05
60
117.6
1.92E+04
2.54E+04
131
0
1.28E-05
1.28E-05
44
3
99.5
30
15.0
1
Xe 58.78
1.02E+07
5.40E+05
5.51E+05
60
117.6
1.92E+04
4.46E+04
65
0
6.37E-06
6.37E-06
45
3
99.5
40
15.0
1
Xe 58.78
1.02E+07
5.99E+05
6.10E+05
60
117.6
1.92E+04
6.38E+04
58
0
5.69E-06
5.69E-06
46
3
99.5
50
15.0
1
Xe 58.78
5.25E+05
5.82E+05
5.16E+05
60
117.6
9.88E+02
8.30E+04
1
1
1.90E-06
1.90E-06
#
#
C
(V)
(V)
(A)
28
2
27
10
3.3
3.3
29
2
27
15
3.3
30
2
27
30
31
2
27
32
2
33
1
*Tb is the temperature sensed by the transistor on the board (as shown in Fig. 5); Energy Cocktail = 10MeV/nucleon
21
References:
[1] RH3845MKDICE Landing Page: http://www.linear.com/product/RH3845MK
[2] LT3845 Landing Page: http://www.linear.com/product/LT3845
[3] MSK5055RH Landing Page: http://mskennedy.com/products/Switching-Regulators/MSK5055RH.prod
[3.1] DLA SMD# 5962-14223 link: http://www.landandmaritime.dla.mil/Downloads/MilSpec/Smd/14223.pdf
[4] LTSpice: http://www.linear.com/designtools/software/#LTspice
[5] MSK5063RH SEE test report,
22