DDD_RH117K_Fab_Lot_9529063_1_W9.pdf

DDD RH117K-CS 9529063.1 W9
Neutron Irradiation Test Results of the RH117K
Positive Adjustable Regulator
05 January 2015
Duc Nguyen, Sana Rezgui
Acknowledgements
The authors would like to thank the S-Power Product Engineering Groups from Linear
Technology for the data collection pre- and post-irradiations. Special thanks are also for
Thomas Regan from University of Massachusetts, Lowell (UMASS) for the help with the
neutrons irradiation tests.
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DDD RH117K-CS 9529063.1 W9
Neutron Radiation Testing of the RH117K Positive
Adjustable Regulator
Part Type Tested: RH117K Positive Adjustable Regulator.
Traceability Information: Fab Lot# 9529063.1; Wafer # 9; Assembly Lot # 263277.2, D/C 0912B.
See photograph of unit under test in Appendix A.
Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Leads
of devices, serial numbers 15-17, 20, and 22 were shorted together using anti-static foam during
irradiation. Serial numbers 33 and 34 were used as control. See Appendix B for the radiation bias
connection tables.
Radiation Dose: Total fluence of 1E12 neutron/cm2.
Radiation Test Standard: MIL-STD-883 TM1017
Test Hardware and Software: LTX test program EQ2CR117K.03
Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI.
Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883
and MIL-STD-750.
SUMMARY
ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS
SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2.
ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST.
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1.0
Overview and Background
Neutron particles incident on semiconductor materials lose energy along their paths. The energy
loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice
(displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects
or broken bonds. Such defects elevate the energy level of the material and consequently change
material and electrical properties. The altering energy level creates the combination of any of the
following processes, thermal generation of electron-hole pairs, recombination, trapping,
compensation, tunneling, affecting hence the device’s basic features.
Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12
neutron/cm2. The neutron radiation test for the RH117K determines the change in device
performance as a function of neutrons’ fluence.
2.0
Radiation Facility:
Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the
Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265,
to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix C for the
certificate of dosimetry.
3.0
Test Conditions
Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing
was performed on the two control units to confirm the operation of the test system prior to the
electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices leads were
shorted together using anti-static foam and devices then were placed into an anti-static bag.
Devices were then vertically aligned with the radiation source.
The criteria to pass the neutron displacement damage test is that five irradiated samples must
pass the datasheet limits. If any of the tested parameters of these five units do not meet the
required limits then a failure-analysis of the part should be conducted in accordance with method
5004, MIL-STD-883, and if valid the lot will be scrapped.
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4.0
Tested Parameters
The following parameters were measured pre- and post-irradiations:
-
Reference Voltage VREF (V) @ 3V ≤ VIN – VOUT ≤ 40V, 10mA ≤ IL ≤ 1.5A
Line Regulation ∆VOUT/∆VIN (%/V) @ 3V ≤ VIN – VOUT ≤ 50V, IL = 10mA
Load Regulation ∆VOUT/∆IOUT (mV) @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V
Load Regulation ∆VOUT/∆IOUT (%) @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V
Adjust Pin Current IADJ (uA)
Adjust Pin Current Change ∆IADJ (uA) @ 10mA ≤ IL ≤ 1.5A
Adjust Pin Current Change ∆IADJ (uA) @ 3V ≤ VIN – VOUT ≤ 40V, IOUT = 10mA
Minimum Load Current IMIN (mA) @ VIN – VOUT = 40V
Current Limit (A) @ VIN – VOUT ≤ 15V
Current Limit (A) @ VIN – VOUT = 40V
Appendix D details the test conditions, minimum and maximum values at different accumulated
doses.
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5.0
Test Results
All five samples passed the post-irradiation electrical tests. All measurements of the ten listed
parameters in section 4.0 are within the specification limits.
The used statistics in this report are based on the tolerance limits, which are bounds to gage the
quality of the manufactured products. It assumes that if the quality of the items is normally
distributed with known mean and known standard deviation, the two-sided tolerance limits can be
calculated as follows:
+KTL = mean + (KTL) (standard deviation)
-KTL = mean - (KTL) (standard deviation)
Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit.
These tolerance limits are defined in a table of inverse normal probability distribution.
However, in most cases, mean and standard deviations are unknown and therefore it is practical
to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample
size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size
of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor
in this report is 2.742.
In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated
samples. The solid lines with square symbols are the computed KTL values of five post-irradiated
samples with the application of the KTL statistics. The orange solid lines with circle markers are
the datasheet specification limits.
The post-irradiation test limits are taken from the Linear Technology datasheet’s 10 Krads(Si)
specification limits.
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VREF (V) @ 10mA ≤ IL ≤ 1.5A, 3V≤VIN -VOUT ≤40V
1.320
1.300
Specification MAX
1.280
Ps90%/90% (+KTL) Unbiased
1.260
Average Unbiased
1.240
Ps90%/90% (-KTL) Unbiased
1.220
Specification MIN
1.200
1.180
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.1 Plot of Reference Voltage @ 10mA ≤ IL ≤ 1.5A, 3V ≤ VIN – VOUT ≤ 40V versus Total
Fluence
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Table 5.1: Raw data table for VREF of pre- and post-irradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
VREF @ 10mA≤IL≤1.5A,3V≤VI-VO≤40V Total Fluence (N/cm2)
(V)
0
1.E+12
Unbiased Irradiation
1.24690
1.22289
Unbiased Irradiation
1.25349
1.23058
Unbiased Irradiation
1.25164
1.22662
Unbiased Irradiation
1.25353
1.23274
Unbiased Irradiation
1.24825
1.22712
Control Unit
1.25334
1.25317
Control Unit
1.24166
1.24160
Unbiased Irradiation Statistics
Average Unbiased
1.25076
1.22799
Std Dev Unbiased
0.00305
0.00380
Ps90%/90% (+KTL) Unbiased
1.25911
1.23842
Ps90%/90% (-KTL) Unbiased
1.24241
1.21756
Specification MIN
1.2
1.2
Status (Measurements)
PASS
PASS
Specification MAX
1.3
1.3
Status (Measurements)
PASS
PASS
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
PASS
PASS
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Line Reg. (%/V) @ 3V≤ VIN - VOUT ≤ 40V, IL = 10mA
2.50E-02
2.00E-02
Specification MAX
1.50E-02
Ps90%/90% (+KTL) Unbiased
1.00E-02
Average Unbiased
5.00E-03
Ps90%/90% (-KTL) Unbiased
0.00E+00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.2: Plot of Line Regulation @ 3V ≤ VIN – VOUT ≤ 40V, IL = 10 mA versus Total Fluence
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Table 5.2: Raw data table for Line Regulation @ 3V ≤ VIN – VOUT ≤ 40V, IL = 10mA of pre- and
post-irradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Line Reg @ 3V≤VI-VO ≤40V,IL=10mA
(%/V)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
1.296E-03 2.361E-03
1.382E-03 2.367E-03
1.312E-03 2.375E-03
1.484E-03 2.679E-03
1.650E-03 2.752E-03
1.392E-03 1.318E-03
1.573E-03 1.331E-03
1.425E-03
1.461E-04
1.825E-03
1.024E-03
2.507E-03
1.923E-04
3.034E-03
1.979E-03
2.00E-02
PASS
2.00E-02
PASS
PASS
PASS
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Load Reg. (mV) @ 10mA ≤ IL ≤ 1.5A
40
Specification MAX
35
30
25
Ps90%/90% (+KTL) Unbiased
20
15
Average Unbiased
10
5
Ps90%/90% (-KTL) Unbiased
0
0
5E+11
1E+12
1.5E+12
Total Fluence (neutrons/cm2)
Figure 5.3: Plot of Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V versus Total Fluence
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Table 5.3: Raw data table for Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V of pre- and postirradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Load Reg @ 10mA≤IL≤1.5A,VOUT ≤5V
(mV)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
0.39196
2.03133
0.30231
1.98364
0.39291
2.12765
0.39768
2.13718
0.40150
1.78337
0.38242
0.37098
0.48828
0.45776
0.37727
0.04208
0.49265
0.26189
15
PASS
PASS
2.01263
0.14361
2.40641
1.61886
36
PASS
PASS
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Load Reg. (%) 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V
0.80
Specification MAX
0.70
0.60
Ps90%/90% (+KTL) Unbiased
0.50
0.40
Average Unbiased
0.30
0.20
Ps90%/90% (-KTL) Unbiased
0.10
0.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.4: Plot of Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V versus Total Fluence
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Table 5.4: Raw data table for Load Reg. @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V of pre- and post-irradiation
(1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Load Reg @ 10mA≤IL≤1.5A,VOUT ≥5V
(%)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
0.03143
0.16611
0.02412
0.16120
0.03139
0.17346
0.03172
0.17337
0.03216
0.14533
0.03051
0.02960
0.03933
0.03687
0.03017
0.00340
0.03948
0.02086
0.3
PASS
PASS
0.16389
0.01160
0.19569
0.13209
0.72
PASS
PASS
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110.00
Specification MAX
Adjust Pin Current (uA)
100.00
90.00
80.00
Ps90%/90% (+KTL) Unbiased
70.00
60.00
Average Unbiased
50.00
40.00
Ps90%/90% (-KTL) Unbiased
30.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.5: Plot of Adjust Pin Current versus Total Fluence
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Table 5.5: Raw data table for Adjust Pin Current of pre- and post-irradiation (1E12 N/cm2)
Parameter
Adjust Pin Current
Total Fluence (N/cm2)
Units
(uA)
0
1.E+12
15 Unbiased Irradiation
40.63614 39.13647
16 Unbiased Irradiation
40.64212 39.27094
17 Unbiased Irradiation
39.20321 37.72747
20 Unbiased Irradiation
41.73219 40.48119
22 Unbiased Irradiation
39.40331 38.09047
33 Control Unit
41.97947 41.95026
34 Control Unit
41.10741 41.14221
Unbiased Irradiation Statistics
Average Unbiased
40.32339 38.94131
Std Dev Unbiased
1.03507
1.08574
Ps90%/90% (+KTL) Unbiased
43.16155 41.91840
Ps90%/90% (-KTL) Unbiased
37.48524 35.96421
Specification MIN
Status (Measurements)
Specification MAX
100
100
Status (Measurements)
PASS
PASS
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
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Adj Pin I Change (uA) @ 10mA≤ IL ≤1.5A,
6.00
Specification MAX
5.00
4.00
Ps90%/90% (+KTL) Unbiased
3.00
2.00
Average Unbiased
1.00
Ps90%/90% (-KTL) Unbiased
0.00
-1.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.6: Plot of Adjust Pin Current Change @ 10mA ≤ IL ≤ 1.5A versus Total Fluence
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Table 5.6: Raw data table for Adjust Pin Current Change @ 10mA ≤ IL ≤ 1.5A of pre- and postirradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Adj Pin I change @ 10mA ≤ IL ≤ 1.5A
(uA)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
0.01433
0.09884
0.03345
0.09754
0.00598
0.14638
0.02807
0.11420
0.01672
0.09409
0.01433
0.01362
0.04660
0.04884
0.01971
0.01101
0.04991
-0.01049
5
PASS
PASS
0.11021
0.02164
0.16956
0.05087
5
PASS
PASS
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Adj Pin I Change (uA) @ 3V≤ VIN - VOUT ≤ 40V
6.00
Specification MAX
5.00
4.00
Ps90%/90% (+KTL) Unbiased
3.00
2.00
Average Unbiased
1.00
Ps90%/90% (-KTL) Unbiased
0.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.7: Plot of Adjust Pin Current Change @ 3V ≤ VIN – VOUT ≤ 40V versus Total Fluence
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Table 5.7: Raw data table for Adjust Pin Current Change @ 3V ≤ VIN – VOUT ≤ 40V of pre- and
post-irradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Adj. I Change @ 3V≤ VIN - VOUT ≤ 40V
(uA)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
0.04839
0.08801
0.09258
0.08564
0.09200
0.12612
0.09497
0.08919
0.06630
0.09991
0.06332
0.09171
0.07226
0.06311
0.07885
0.02066
0.13548
0.02221
5
PASS
PASS
0.09777
0.01677
0.14375
0.05180
5
PASS
PASS
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Min. Load Current (mA) @ VIN - VOUT = 40V
5.50
Specification MAX
5.00
4.50
4.00
Ps90%/90% (+KTL) Unbiased
3.50
3.00
Average Unbiased
2.50
2.00
Ps90%/90% (-KTL) Unbiased
1.50
1.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.8: Plot of Minimum Load Current @ VIN – VOUT = 40V versus Total Fluence
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Table 5.8: Raw data table for Minimum Load Current @ VIN – VOUT = 40V of pre- and postirradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Min Load Current @ VIN - VOUT = 40V
(mA)
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Unbiased Irradiation
Control Unit
Control Unit
Unbiased Irradiation Statistics
Average Unbiased
Std Dev Unbiased
Ps90%/90% (+KTL) Unbiased
Ps90%/90% (-KTL) Unbiased
Specification MIN
Status (Measurements)
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
Total Fluence (N/cm2)
0
1.E+12
1.70252
1.90104
1.65555
1.82570
1.59205
1.77362
2.00202
1.82540
1.65647
1.84545
1.73548
1.74128
1.73931
1.74059
1.72172
0.16154
2.16467
1.27877
5
PASS
PASS
1.83424
0.04587
1.96000
1.70848
5
PASS
PASS
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Current Limit (A) @ VIN - VOUT = 15V
2.60
Ps90%/90% (+KTL) Unbiased
2.40
2.20
Average Unbiased
2.00
1.80
Ps90%/90% (-KTL) Unbiased
1.60
Specification MIN
1.40
1.20
1.00
0
5E+11
1E+12
1.5E+12
Total Fluence (neutrons/cm2)
Figure 5.9: Plot of Minimum Load Current @ VIN – VOUT = 15V versus Total Fluence
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Table 5.9: Raw data table for Minimum Load Current @ VIN – VOUT = 15V of pre- and postirradiation (1E12 N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Current Limit @ VIN - VOUT = 15V Total Fluence (N/cm2)
(A)
0
1.E+12
Unbiased Irradiation
2.11072
2.35190
Unbiased Irradiation
2.14302
2.38990
Unbiased Irradiation
2.17582
2.43460
Unbiased Irradiation
2.18508
2.41109
Unbiased Irradiation
2.10641
2.33404
Control Unit
2.17289
2.16394
Control Unit
2.04869
2.04170
Unbiased Irradiation Statistics
Average Unbiased
2.14421
2.38430
Std Dev Unbiased
0.03613
0.04140
Ps90%/90% (+KTL) Unbiased
2.24327
2.49782
Ps90%/90% (-KTL) Unbiased
2.04515
2.27079
Specification MIN
1.5
1.5
Status (Measurements)
PASS
PASS
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
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1.00
Ps90%/90% (+KTL) Unbiased
Current Limit (A) @ VIN - VOUT = 40V
0.90
0.80
0.70
Average Unbiased
0.60
0.50
Ps90%/90% (-KTL) Unbiased
0.40
0.30
Specification MIN
0.20
0.10
0.00
0
5E+11
Total Fluence
1E+12
1.5E+12
(neutrons/cm2)
Figure 5.10: Plot of Current Limit @ VIN – VOUT = 40V versus Total Fluence
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Table 5.10: Raw data table for Current Limit @ VIN – VOUT = 40V of pre- and post-irradiation (1E12
N/cm2)
Parameter
Units
15
16
17
20
22
33
34
Current Limit @ VIN - VOUT = 40V Total Fluence (N/cm2)
(A)
0
1.E+12
Unbiased Irradiation
0.51440
0.79628
Unbiased Irradiation
0.49515
0.78122
Unbiased Irradiation
0.51818
0.82392
Unbiased Irradiation
0.48936
0.75740
Unbiased Irradiation
0.45346
0.72220
Control Unit
0.51732
0.51620
Control Unit
0.46042
0.46200
Unbiased Irradiation Statistics
Average Unbiased
0.49411
0.77620
Std Dev Unbiased
0.02582
0.03865
Ps90%/90% (+KTL) Unbiased
0.56491
0.88219
Ps90%/90% (-KTL) Unbiased
0.42331
0.67022
Specification MIN
0.3
0.3
Status (Measurements)
PASS
PASS
Specification MAX
Status (Measurements)
Status (-KTL) Unbiased
Status (+KTL) Unbiased
PASS
PASS
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Appendix A
Pictures of one among five samples used in the test.
Figure A1: Top View showing date code, lot and wafer numbers
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Appendix B
Radiation Bias Connection Table
Pin
Table B1: Unbiased condition
Function
1
2
3
Adjust
VIN
VOUT (CASE)
Connection
Float
Float
Float
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Figure B1: Pin-Out
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Appendix C
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Appendix D
Table D1: Electrical Characteristics of Device-Under-Test Pre-Irradiation
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Table D2: Electrical Characteristics of Device-Under-Test Post-Irradiation
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