DDD RH117K-CS 9529063.1 W9 Neutron Irradiation Test Results of the RH117K Positive Adjustable Regulator 05 January 2015 Duc Nguyen, Sana Rezgui Acknowledgements The authors would like to thank the S-Power Product Engineering Groups from Linear Technology for the data collection pre- and post-irradiations. Special thanks are also for Thomas Regan from University of Massachusetts, Lowell (UMASS) for the help with the neutrons irradiation tests. P a g e 1 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Neutron Radiation Testing of the RH117K Positive Adjustable Regulator Part Type Tested: RH117K Positive Adjustable Regulator. Traceability Information: Fab Lot# 9529063.1; Wafer # 9; Assembly Lot # 263277.2, D/C 0912B. See photograph of unit under test in Appendix A. Quantity of Units: 7 units received, 2 units for control, and 5 units for unbiased irradiation. Leads of devices, serial numbers 15-17, 20, and 22 were shorted together using anti-static foam during irradiation. Serial numbers 33 and 34 were used as control. See Appendix B for the radiation bias connection tables. Radiation Dose: Total fluence of 1E12 neutron/cm2. Radiation Test Standard: MIL-STD-883 TM1017 Test Hardware and Software: LTX test program EQ2CR117K.03 Facility and Radiation Source: University of Massachusetts, Lowell and Reactor Facility-FNI. Irradiation and Test Temperature: Room temperature controlled to 24°C±6°C per MIL-STD-883 and MIL-STD-750. SUMMARY ALL FIVE PARTS PASSED THE ELECTRICAL TEST LIMITS AS SPECIFIED IN THE DATASHEET AFTER IRRADIATION TO 1E12 N/cm2. ADDITIONAL INFORMATION CAN BE PROVIDED PER REQUEST. P a g e 2 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 1.0 Overview and Background Neutron particles incident on semiconductor materials lose energy along their paths. The energy loss produces electron-hole pairs (ionization) and displaces atoms in the material lattice (displacement damage defects or DDD). DDD induces a mixture of isolated and clustered defects or broken bonds. Such defects elevate the energy level of the material and consequently change material and electrical properties. The altering energy level creates the combination of any of the following processes, thermal generation of electron-hole pairs, recombination, trapping, compensation, tunneling, affecting hence the device’s basic features. Bipolar technology is susceptible to neutron displacement damage around a fluence level of 1E12 neutron/cm2. The neutron radiation test for the RH117K determines the change in device performance as a function of neutrons’ fluence. 2.0 Radiation Facility: Five samples were irradiated unbiased at the University of Massachusetts, Lowell, using the Reactor Facility-FNI. The neutron flux was determined by system S/P-32, method ASTM E-265, to be 4.05E9 N/cm2-s (1MeV equivalent) for each irradiation step. Refer to Appendix C for the certificate of dosimetry. 3.0 Test Conditions Five samples and two control units were electrically tested at 25°C prior to irradiation. The testing was performed on the two control units to confirm the operation of the test system prior to the electrical testing of the 7 units (5 irradiated and 2 control). During irradiation, devices leads were shorted together using anti-static foam and devices then were placed into an anti-static bag. Devices were then vertically aligned with the radiation source. The criteria to pass the neutron displacement damage test is that five irradiated samples must pass the datasheet limits. If any of the tested parameters of these five units do not meet the required limits then a failure-analysis of the part should be conducted in accordance with method 5004, MIL-STD-883, and if valid the lot will be scrapped. P a g e 3 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 4.0 Tested Parameters The following parameters were measured pre- and post-irradiations: - Reference Voltage VREF (V) @ 3V ≤ VIN – VOUT ≤ 40V, 10mA ≤ IL ≤ 1.5A Line Regulation ∆VOUT/∆VIN (%/V) @ 3V ≤ VIN – VOUT ≤ 50V, IL = 10mA Load Regulation ∆VOUT/∆IOUT (mV) @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V Load Regulation ∆VOUT/∆IOUT (%) @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V Adjust Pin Current IADJ (uA) Adjust Pin Current Change ∆IADJ (uA) @ 10mA ≤ IL ≤ 1.5A Adjust Pin Current Change ∆IADJ (uA) @ 3V ≤ VIN – VOUT ≤ 40V, IOUT = 10mA Minimum Load Current IMIN (mA) @ VIN – VOUT = 40V Current Limit (A) @ VIN – VOUT ≤ 15V Current Limit (A) @ VIN – VOUT = 40V Appendix D details the test conditions, minimum and maximum values at different accumulated doses. P a g e 4 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 5.0 Test Results All five samples passed the post-irradiation electrical tests. All measurements of the ten listed parameters in section 4.0 are within the specification limits. The used statistics in this report are based on the tolerance limits, which are bounds to gage the quality of the manufactured products. It assumes that if the quality of the items is normally distributed with known mean and known standard deviation, the two-sided tolerance limits can be calculated as follows: +KTL = mean + (KTL) (standard deviation) -KTL = mean - (KTL) (standard deviation) Where +KTL is the upper tolerance limit and -KTL is the lower tolerance limit. These tolerance limits are defined in a table of inverse normal probability distribution. However, in most cases, mean and standard deviations are unknown and therefore it is practical to estimate both of them from a sample. Hence the tolerance limit depends greatly on the sample size. The Ps90%/90% KTL factor for a lot quality P of 0.9, confidence C of 0.9 with a sample size of 5, can be found from the tabulated table (MIL-HDBK-814, page 94, table IX-B). The KTL factor in this report is 2.742. In the plots, the dashed lines with X-markers are the measured data points of five post-irradiated samples. The solid lines with square symbols are the computed KTL values of five post-irradiated samples with the application of the KTL statistics. The orange solid lines with circle markers are the datasheet specification limits. The post-irradiation test limits are taken from the Linear Technology datasheet’s 10 Krads(Si) specification limits. P a g e 5 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 VREF (V) @ 10mA ≤ IL ≤ 1.5A, 3V≤VIN -VOUT ≤40V 1.320 1.300 Specification MAX 1.280 Ps90%/90% (+KTL) Unbiased 1.260 Average Unbiased 1.240 Ps90%/90% (-KTL) Unbiased 1.220 Specification MIN 1.200 1.180 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.1 Plot of Reference Voltage @ 10mA ≤ IL ≤ 1.5A, 3V ≤ VIN – VOUT ≤ 40V versus Total Fluence P a g e 6 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.1: Raw data table for VREF of pre- and post-irradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 VREF @ 10mA≤IL≤1.5A,3V≤VI-VO≤40V Total Fluence (N/cm2) (V) 0 1.E+12 Unbiased Irradiation 1.24690 1.22289 Unbiased Irradiation 1.25349 1.23058 Unbiased Irradiation 1.25164 1.22662 Unbiased Irradiation 1.25353 1.23274 Unbiased Irradiation 1.24825 1.22712 Control Unit 1.25334 1.25317 Control Unit 1.24166 1.24160 Unbiased Irradiation Statistics Average Unbiased 1.25076 1.22799 Std Dev Unbiased 0.00305 0.00380 Ps90%/90% (+KTL) Unbiased 1.25911 1.23842 Ps90%/90% (-KTL) Unbiased 1.24241 1.21756 Specification MIN 1.2 1.2 Status (Measurements) PASS PASS Specification MAX 1.3 1.3 Status (Measurements) PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS PASS PASS P a g e 7 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Line Reg. (%/V) @ 3V≤ VIN - VOUT ≤ 40V, IL = 10mA 2.50E-02 2.00E-02 Specification MAX 1.50E-02 Ps90%/90% (+KTL) Unbiased 1.00E-02 Average Unbiased 5.00E-03 Ps90%/90% (-KTL) Unbiased 0.00E+00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.2: Plot of Line Regulation @ 3V ≤ VIN – VOUT ≤ 40V, IL = 10 mA versus Total Fluence P a g e 8 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.2: Raw data table for Line Regulation @ 3V ≤ VIN – VOUT ≤ 40V, IL = 10mA of pre- and post-irradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Line Reg @ 3V≤VI-VO ≤40V,IL=10mA (%/V) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 1.296E-03 2.361E-03 1.382E-03 2.367E-03 1.312E-03 2.375E-03 1.484E-03 2.679E-03 1.650E-03 2.752E-03 1.392E-03 1.318E-03 1.573E-03 1.331E-03 1.425E-03 1.461E-04 1.825E-03 1.024E-03 2.507E-03 1.923E-04 3.034E-03 1.979E-03 2.00E-02 PASS 2.00E-02 PASS PASS PASS P a g e 9 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Load Reg. (mV) @ 10mA ≤ IL ≤ 1.5A 40 Specification MAX 35 30 25 Ps90%/90% (+KTL) Unbiased 20 15 Average Unbiased 10 5 Ps90%/90% (-KTL) Unbiased 0 0 5E+11 1E+12 1.5E+12 Total Fluence (neutrons/cm2) Figure 5.3: Plot of Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V versus Total Fluence P a g e 10 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.3: Raw data table for Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≤ 5V of pre- and postirradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Load Reg @ 10mA≤IL≤1.5A,VOUT ≤5V (mV) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 0.39196 2.03133 0.30231 1.98364 0.39291 2.12765 0.39768 2.13718 0.40150 1.78337 0.38242 0.37098 0.48828 0.45776 0.37727 0.04208 0.49265 0.26189 15 PASS PASS 2.01263 0.14361 2.40641 1.61886 36 PASS PASS P a g e 11 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Load Reg. (%) 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V 0.80 Specification MAX 0.70 0.60 Ps90%/90% (+KTL) Unbiased 0.50 0.40 Average Unbiased 0.30 0.20 Ps90%/90% (-KTL) Unbiased 0.10 0.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.4: Plot of Load Regulation @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V versus Total Fluence P a g e 12 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.4: Raw data table for Load Reg. @ 10mA ≤ IL ≤ 1.5A, VOUT ≥ 5V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Load Reg @ 10mA≤IL≤1.5A,VOUT ≥5V (%) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 0.03143 0.16611 0.02412 0.16120 0.03139 0.17346 0.03172 0.17337 0.03216 0.14533 0.03051 0.02960 0.03933 0.03687 0.03017 0.00340 0.03948 0.02086 0.3 PASS PASS 0.16389 0.01160 0.19569 0.13209 0.72 PASS PASS P a g e 13 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 110.00 Specification MAX Adjust Pin Current (uA) 100.00 90.00 80.00 Ps90%/90% (+KTL) Unbiased 70.00 60.00 Average Unbiased 50.00 40.00 Ps90%/90% (-KTL) Unbiased 30.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.5: Plot of Adjust Pin Current versus Total Fluence P a g e 14 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.5: Raw data table for Adjust Pin Current of pre- and post-irradiation (1E12 N/cm2) Parameter Adjust Pin Current Total Fluence (N/cm2) Units (uA) 0 1.E+12 15 Unbiased Irradiation 40.63614 39.13647 16 Unbiased Irradiation 40.64212 39.27094 17 Unbiased Irradiation 39.20321 37.72747 20 Unbiased Irradiation 41.73219 40.48119 22 Unbiased Irradiation 39.40331 38.09047 33 Control Unit 41.97947 41.95026 34 Control Unit 41.10741 41.14221 Unbiased Irradiation Statistics Average Unbiased 40.32339 38.94131 Std Dev Unbiased 1.03507 1.08574 Ps90%/90% (+KTL) Unbiased 43.16155 41.91840 Ps90%/90% (-KTL) Unbiased 37.48524 35.96421 Specification MIN Status (Measurements) Specification MAX 100 100 Status (Measurements) PASS PASS Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 15 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Adj Pin I Change (uA) @ 10mA≤ IL ≤1.5A, 6.00 Specification MAX 5.00 4.00 Ps90%/90% (+KTL) Unbiased 3.00 2.00 Average Unbiased 1.00 Ps90%/90% (-KTL) Unbiased 0.00 -1.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.6: Plot of Adjust Pin Current Change @ 10mA ≤ IL ≤ 1.5A versus Total Fluence P a g e 16 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.6: Raw data table for Adjust Pin Current Change @ 10mA ≤ IL ≤ 1.5A of pre- and postirradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Adj Pin I change @ 10mA ≤ IL ≤ 1.5A (uA) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 0.01433 0.09884 0.03345 0.09754 0.00598 0.14638 0.02807 0.11420 0.01672 0.09409 0.01433 0.01362 0.04660 0.04884 0.01971 0.01101 0.04991 -0.01049 5 PASS PASS 0.11021 0.02164 0.16956 0.05087 5 PASS PASS P a g e 17 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Adj Pin I Change (uA) @ 3V≤ VIN - VOUT ≤ 40V 6.00 Specification MAX 5.00 4.00 Ps90%/90% (+KTL) Unbiased 3.00 2.00 Average Unbiased 1.00 Ps90%/90% (-KTL) Unbiased 0.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.7: Plot of Adjust Pin Current Change @ 3V ≤ VIN – VOUT ≤ 40V versus Total Fluence P a g e 18 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.7: Raw data table for Adjust Pin Current Change @ 3V ≤ VIN – VOUT ≤ 40V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Adj. I Change @ 3V≤ VIN - VOUT ≤ 40V (uA) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 0.04839 0.08801 0.09258 0.08564 0.09200 0.12612 0.09497 0.08919 0.06630 0.09991 0.06332 0.09171 0.07226 0.06311 0.07885 0.02066 0.13548 0.02221 5 PASS PASS 0.09777 0.01677 0.14375 0.05180 5 PASS PASS P a g e 19 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Min. Load Current (mA) @ VIN - VOUT = 40V 5.50 Specification MAX 5.00 4.50 4.00 Ps90%/90% (+KTL) Unbiased 3.50 3.00 Average Unbiased 2.50 2.00 Ps90%/90% (-KTL) Unbiased 1.50 1.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.8: Plot of Minimum Load Current @ VIN – VOUT = 40V versus Total Fluence P a g e 20 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.8: Raw data table for Minimum Load Current @ VIN – VOUT = 40V of pre- and postirradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Min Load Current @ VIN - VOUT = 40V (mA) Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Unbiased Irradiation Control Unit Control Unit Unbiased Irradiation Statistics Average Unbiased Std Dev Unbiased Ps90%/90% (+KTL) Unbiased Ps90%/90% (-KTL) Unbiased Specification MIN Status (Measurements) Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased Total Fluence (N/cm2) 0 1.E+12 1.70252 1.90104 1.65555 1.82570 1.59205 1.77362 2.00202 1.82540 1.65647 1.84545 1.73548 1.74128 1.73931 1.74059 1.72172 0.16154 2.16467 1.27877 5 PASS PASS 1.83424 0.04587 1.96000 1.70848 5 PASS PASS P a g e 21 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Current Limit (A) @ VIN - VOUT = 15V 2.60 Ps90%/90% (+KTL) Unbiased 2.40 2.20 Average Unbiased 2.00 1.80 Ps90%/90% (-KTL) Unbiased 1.60 Specification MIN 1.40 1.20 1.00 0 5E+11 1E+12 1.5E+12 Total Fluence (neutrons/cm2) Figure 5.9: Plot of Minimum Load Current @ VIN – VOUT = 15V versus Total Fluence P a g e 22 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.9: Raw data table for Minimum Load Current @ VIN – VOUT = 15V of pre- and postirradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Current Limit @ VIN - VOUT = 15V Total Fluence (N/cm2) (A) 0 1.E+12 Unbiased Irradiation 2.11072 2.35190 Unbiased Irradiation 2.14302 2.38990 Unbiased Irradiation 2.17582 2.43460 Unbiased Irradiation 2.18508 2.41109 Unbiased Irradiation 2.10641 2.33404 Control Unit 2.17289 2.16394 Control Unit 2.04869 2.04170 Unbiased Irradiation Statistics Average Unbiased 2.14421 2.38430 Std Dev Unbiased 0.03613 0.04140 Ps90%/90% (+KTL) Unbiased 2.24327 2.49782 Ps90%/90% (-KTL) Unbiased 2.04515 2.27079 Specification MIN 1.5 1.5 Status (Measurements) PASS PASS Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 23 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 1.00 Ps90%/90% (+KTL) Unbiased Current Limit (A) @ VIN - VOUT = 40V 0.90 0.80 0.70 Average Unbiased 0.60 0.50 Ps90%/90% (-KTL) Unbiased 0.40 0.30 Specification MIN 0.20 0.10 0.00 0 5E+11 Total Fluence 1E+12 1.5E+12 (neutrons/cm2) Figure 5.10: Plot of Current Limit @ VIN – VOUT = 40V versus Total Fluence P a g e 24 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table 5.10: Raw data table for Current Limit @ VIN – VOUT = 40V of pre- and post-irradiation (1E12 N/cm2) Parameter Units 15 16 17 20 22 33 34 Current Limit @ VIN - VOUT = 40V Total Fluence (N/cm2) (A) 0 1.E+12 Unbiased Irradiation 0.51440 0.79628 Unbiased Irradiation 0.49515 0.78122 Unbiased Irradiation 0.51818 0.82392 Unbiased Irradiation 0.48936 0.75740 Unbiased Irradiation 0.45346 0.72220 Control Unit 0.51732 0.51620 Control Unit 0.46042 0.46200 Unbiased Irradiation Statistics Average Unbiased 0.49411 0.77620 Std Dev Unbiased 0.02582 0.03865 Ps90%/90% (+KTL) Unbiased 0.56491 0.88219 Ps90%/90% (-KTL) Unbiased 0.42331 0.67022 Specification MIN 0.3 0.3 Status (Measurements) PASS PASS Specification MAX Status (Measurements) Status (-KTL) Unbiased Status (+KTL) Unbiased PASS PASS P a g e 25 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Appendix A Pictures of one among five samples used in the test. Figure A1: Top View showing date code, lot and wafer numbers P a g e 26 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Appendix B Radiation Bias Connection Table Pin Table B1: Unbiased condition Function 1 2 3 Adjust VIN VOUT (CASE) Connection Float Float Float P a g e 27 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Figure B1: Pin-Out P a g e 28 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Appendix C P a g e 29 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Appendix D Table D1: Electrical Characteristics of Device-Under-Test Pre-Irradiation P a g e 30 | 31 LINEAR TECHNOLOGY CORPORATION DDD RH117K-CS 9529063.1 W9 Table D2: Electrical Characteristics of Device-Under-Test Post-Irradiation P a g e 31 | 31 LINEAR TECHNOLOGY CORPORATION