PD - 96132
IRF7380QPbF
l
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HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
VDSS
RDS(on) max
73m:@VGS = 10V
80V
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
Description
Specifically designed for Automotive applications. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
G2
ID
2.2A
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
3.6
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
2.9
IDM
Pulsed Drain Current
29
PD @TA = 25°C
Maximum Power Dissipation
2.0
W
Linear Derating Factor
0.02
W/°C
2.3
-55 to + 150
V/ns
°C
h
c
e
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
Thermal Resistance
Parameter
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient (PCB Mount) *
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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1
09/14/07
IRF7380QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 2.2A
f
RDS(on)
Static Drain-to-Source On-Resistance
–––
61
73
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS = 80V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
S
Conditions
gfs
Qg
Forward Transconductance
4.3
VDS = 25V, ID = 2.2A
Total Gate Charge
–––
15
23
Qgs
Gate-to-Source Charge
–––
2.9
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.5
–––
VGS = 10V
td(on)
Turn-On Delay Time
–––
9.0
–––
VDD = 40V
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
41
–––
tf
Fall Time
–––
17
–––
VGS = 10V
Ciss
Input Capacitance
–––
660
–––
VGS = 0V
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
15
–––
Coss
Output Capacitance
–––
710
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
72
–––
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
140
–––
VGS = 0V, VDS = 0V to 64V
ID = 2.2A
nC
VDS = 40V
f
ID = 2.2A
ns
RG = 24Ω
f
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
dh
Typ.
Max.
Units
–––
75
mJ
–––
2.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.6
A
MOSFET symbol
ISM
(Body Diode)
Pulsed Source Current
–––
–––
29
A
showing the
integral reverse
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
trr
Reverse Recovery Time
–––
50
–––
ns
Qrr
Reverse Recovery Charge
–––
110
–––
nC
ton
Forward Turn-On Time
2
ch
D
G
S
f
TJ = 25°C, IF = 2.2A, VDD = 40V
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7380QPbF
100
100
10
BOTTOM
1
3.7V
0.1
0.01
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
10
BOTTOM
3.7V
1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.001
0.1
1
10
100
0.1
1000
1
Fig 1. Typical Output Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
2.5
10
T J = 150°C
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
0
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
1000
Fig 2. Typical Output Characteristics
100
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (Α)
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
7.0
I D = 3.6A
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7380QPbF
100000
VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
C oss
100
Crss
10
ID= 2.1A
VDS= 16V
8
6
4
2
1
0
1
10
100
0
2
VDS, Drain-to-Source Voltage (V)
6
8
10
12
14
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
4
Q G Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T J= 25 ° C
TJ = 150 ° C
1
V GS = 0 V
0.1
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS= 64V
VDS= 40V
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
2.0
1
10msec
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7380QPbF
4.0
RD
VDS
VGS
ID , Drain Current (A)
3.0
D.U.T.
RG
+
-V DD
10V
2.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.1
0.00001
0.0001
0.001
0.01
0.1
t1/ t 2
J = P DM x Z thJA
1
+T A
10
100
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
RDS(on) , Drain-to -Source On Resistance (m Ω)
IRF7380QPbF
RDS (on) , Drain-to-Source On Resistance (mΩ)
95
90
85
80
VGS = 10V
75
70
65
60
55
50
0
5
10
15
20
25
30
800
700
600
500
400
300
ID = 3.6A
200
100
0
3.0
ID , Drain Current (A)
5.0
7.0
9.0
11.0
13.0
15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
200
VG
EAS, Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
160
BOTTOM
ID
1.0A
1.8A
2.2A
120
80
40
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7380QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7380QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 31mH
RG = 25Ω, IAS = 2.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
8
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