Product Overview 2SJ652: P-Channel Power MOSFET, -60V, -28A, 38mΩ , TO-220F-3SG For complete documentation, see the data sheet Product Description 2SJ652 is a P-Channel Power MOSFET, -60V, -28A, 38mΩ , TO-220F-3SG for General-purpose Swiching Device Application. It features low on-resistance, ultra-high speed switching and 4.0V drive. Features • Low on-resistance 28.5mΩ (typ) • Input capacitance Ciss = 4360pF (typ) • 4.0V drive Part Electrical Specifications Product 2SJ652-1E Compliance Pb-free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on PSin Cha gle nne l -60 VGS Ma x (V) VGS 20 -2.6 -28 (th) Ma x (V) ID Ma x (A) PD Ma x (W) 2 rDS( rDS( rDS( on) on) on) 55. 5 38 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 80 12 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 436 0 470 335 TO220 Full pac k, 3Lea d/ TO220 F3F G