RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER® • Ideal for automated placement • Fast switching for high efficiency • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C DO-214BA (GF1) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PPRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns TJ max. 175 °C MECHANICAL DATA Case: DO-214BA, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified TYPICAL APPLICATIONS Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. Polarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage rating MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M RA RB RD RG RJ RK RM UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 120 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum full load reverse current, full cycle average TA = 55 °C IR(AV) 50 μA TJ, TSTG - 65 to + 175 °C Operating junction and storage temperature range Document Number: 88697 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RGF1A thru RGF1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A Maximum DC reverse current at rated DC blocking voltage SYMBOL RGF1A RGF1B RGF1D RGF1G VF RGF1J RGF1K RGF1M UNIT 1.3 TA = 25 °C V 5.0 IR μA TA = 125 °C 100 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance 4.0 V, 1 MHz CJ 150 250 500 ns 8.5 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance RGF1A RGF1B RGF1D RGF1G RJA (1) 80 RJL (1) 28 RGF1J RGF1K RGF1M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N RGF1J-E3/67A RGF1J-E3/5CA UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.104 67A 1500 7" diameter plastic tape and reel 0.104 5CA 6500 13" diameter plastic tape and reel (1) 0.104 67A 1500 7" diameter plastic tape and reel RGF1JHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel RGF1JHE3/67A Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 30 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 1.00 0.75 0.50 0.25 60 Hz Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.25 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 25 20 15 10 5 0 0 100 120 140 160 180 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 88697 [email protected], [email protected], [email protected] Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RGF1A thru RGF1M Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 0.1 0.01 0.4 10 1 0.6 0.8 1.0 1.2 1.4 1.6 10 1 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 °C 1 TJ = 100 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 10 1 Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214BA (GF1) Cathode Band Mounting Pad Layout 0.066 (1.68) 0.040 (1.02) 0.076 (1.93) MAX. 0.066 (1.68) MIN. 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) 0.060 (1.52) MIN. 0.108 (2.74) 0.098 (2.49) 0.118 (3.00) 0.100 (2.54) 0.060 (1.52) 0.030 (0.76) Document Number: 88697 Revision: 15-Mar-11 0.006 (0.152) TYP. 0.220 (5.58) REF. 0.114 (2.90) 0.094 (2.39) 0.226 (5.74) 0.196 (4.98) For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This datasheet is subject to change without notice. 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