2N3904/MMBT3904/PZT3904 2N3904 MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N3904 625 5.0 83.3 *MMBT3904 350 2.8 **PZT3904 1,000 8.0 200 357 125 *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Web Site: WWW.PS-PFS.COM mW mW/°C °C/W °C/W 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier Electrical Characteristics Symbol (continued) TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V IE = 10 µA, IC = 0 6.0 V IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 0.65 300 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7kHz 300 MHz 4.0 pF 8.0 pF 5.0 dB SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns tf Fall Time IB1 = IB2 = 1.0 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) Web Site: WWW.PS-PFS.COM 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β = 10 - 40 °C 25 °C 0.6 125 °C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 β = 10 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 25 °C 125 °C 0.4 0.2 0.1 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 1 10 I C - COLLECTOR CURRENT (mA) Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 - 40 °C 0.6 Collector-Cutoff Current vs Ambient Temperature 100 100 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 5 4 3 C ibo 2 C obo 1 0.1 Web Site: WWW.PS-PFS.COM 1 10 REVERSE BIAS VOLTAGE (V) 100 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 µA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 µA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 µA 8 6 I C = 100 µA 4 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) Power Dissipation vs Ambient Temperature θ V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) 1 PD - POWER DISSIPATION (W) fe h 0 20 40 60 80 100 120 140 160 180 h fe θ - DEGREES - CURRENT GAIN (dB) Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1000 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 Turn-On Time vs Collector Current I B1 = I B2 = Ic VCC = 40V 10 TIME (nS) 15V t r @ V CC = 3.0V 2.0V 10 1 125 150 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 10 t d @ VCB = 0V 5 50 75 100 TEMPERATURE (o C) Rise Time vs Collector Current 40V 100 25 500 t r - RISE TIME (ns) 500 100 10 I C - COLLECTOR CURRENT (mA) 100 5 1 Web Site: WWW.PS-PFS.COM 10 I C - COLLECTOR CURRENT (mA) 100 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current I B1 = I B2 = T J = 25°C Fall Time vs Collector Current 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125°C 10 5 T J = 125°C 100 T J = 25°C 1 10 I C - COLLECTOR CURRENT (mA) 5 100 1 10 I C - COLLECTOR CURRENT (mA) Current Gain h oe - OUTPUT ADMITTANCE ( µmhos) V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 1 I C - COLLECTOR CURRENT (mA) 10 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Voltage Feedback Ratio ) _4 V CE = 10 V f = 1.0 kHz T A = 25oC 10 0.1 0.1 100 10 Input Impedance 100 100 Output Admittance h re - VOLTAGE FEEDBACK RATIO (x10 h fe - CURRENT GAIN VCC = 40V 10 500 h ie - INPUT IMPEDANCE (kΩ ) Ic 10 10 7 V CE = 10 V f = 1.0 kHz T A = 25oC 5 4 3 2 1 0.1 Web Site: WWW.PS-PFS.COM 1 I C - COLLECTOR CURRENT (mA) 10 2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 275 Ω 300 ns 10.6 V Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF - 0.5 V < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit Web Site: WWW.PS-PFS.COM