INFINEON Q62702

BAV 70S
Silicon Switching Diode Array
• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
in one package
Type
Marking Ordering Code
Pin Configuration
BAV 70S
A4s
1/4=A1
Q62702-A1097
2/5=A2
Package
3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter
Symbol
Diode reverse voltage
VR
70
Peak reverse voltage
VRM
70
Forward current
IF
200
mA
Surge forward current, t = 1 µs
IFS
4.5
A
Total Power dissipation
Ptot
TS = 85 °C
Values
Unit
V
mW
250
Junction temperature
Tj
Storage temperature
Tstg
150
°C
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 530
RthJS
≤ 260
K/W
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-28-1996
BAV 70S
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics per Diode
Breakdown voltage
V(BR)
I(BR) = 100 µA
Forward voltage
V
70
-
-
VF
mV
IF = 1 mA
-
-
715
IF = 10 mA
-
-
855
IF = 50 mA
-
-
1000
IF = 150 mA
-
-
1250
Reverse current
IR
µA
VR = 70 V, TA = 25 °C
-
-
2.5
VR = 25 V, TA = 150 °C
-
-
30
VR = 70 V, TA = 150 °C
-
-
50
AC characteristics per Diode
Diode capacitance
CD
VR = 0 V, f = 1 MHz
Reverse recovery time
pF
-
-
1.5
trr
ns
IF = 10 mA, IR = 10 mA, RL = 100 Ω
trr measured at 1 mA
Semiconductor Group
-
2
-
6
Nov-28-1996
BAV 70S
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
Forward current IF = f (VF)
TA = 25°C
300
mA
IF
200
TA
TS
150
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f(tp)
Permissible Pulse Load IFmax/IFDC = f(tp)
10 2
10 3
K/W
RthJS
IFmax/IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-6
10
10
-5
10
-4
Semiconductor Group
10
-3
10
-2
-1
10
s 10
tp
0
3
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Nov-28-1996
BAV 70S
Forward voltage VF = f (TA)
Semiconductor Group
Reverse current IR = f (TA)
4
Nov-28-1996