INFINEON BSS670S2L_06

BSS670S2L
OptiMOS Buck converter series
Product Summary
Feature
VDS
••N-Channel
••Enhancement mode
••Logic Level
• Avalanche rated
•
55
V
RDS(on)
650
mΩ
ID
0.54
A
PG-SOT 23
1)
Drain
pin 3
Type
Package
Tape and Reel
Marking
BSS670S2L
PG-SOT 23
L6327: 3000 pcs/reel
BSs
Gate
pin1
Source
pin 2
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C
0.54
TA=70°C
0.43
ID puls
2.2
Avalanche energy, single pulse ID = 0.54 A, RG = 25 Ω 1)
EAS
8.1
Gate source voltage
VGS
± 20
V
Power dissipation
Ptot
0.36
W
Pulsed drain current
TA=25°C
mJ
TA=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
-55... +150
°C
55/150/56
1) Valid from devices with date code 0604 onwards
Rev. 2.3
Page 1
2006-12-01
BSS670S2L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
290
@ min. footprint
-
-
350
@ 6 cm2 cooling area 2)
-
-
300
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 3)
SMD version, device on PCB:
RthJA
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
55
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
VGS=0, ID=1mA
Gate threshold voltage, V GS = VDS
ID=2.7µA
Zero gate voltage drain current
µA
IDSS
VDS=55V, V GS=0, T j=25°C
-
0.01
0.1
VDS=55V, V GS=0, T j=150°C
-
1
10
IGSS
-
1
100
nA
RDS(on)
-
430
825
mΩ
RDS(on)
-
346
650
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=270mA
Drain-source on-state resistance
VGS=10V, ID=270mA
2) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.3
Page 2
2006-12-01
BSS670S2L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.6
1.2
-
S
pF
Dynamic Characteristics
Transconductance
VDS≥2*ID*RDS(on)max ,
gfs
ID=0.54A
Input capacitance
Ciss
VGS=0, VDS =25V,
-
56
75
Output capacitance
Coss
f=1MHz
-
13
18
Reverse transfer capacitance
Crss
-
7
10
Turn-on delay time
t d(on)
VDD=30V, VGS=4.5V,
-
9
14
Rise time
tr
ID=0.54A,
-
25
37
-
21
31
-
24
32
-
0.19
0.25
-
0.57
0.86
-
1.7
2.26
Turn-off delay time
t d(off)
Fall time
tf
RG =130Ω
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
VDD=40V, ID=0.54A
VDD=40V, ID=0.54A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau)
VDD=40V, ID=0.54A
-
3.1
-
V
IS
TA=25°C
-
-
0.38
A
-
-
2.2
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
ISM
Inverse diode forward voltage
VSD
VGS =0, IF =0.54A
-
0.8
1.1
V
Reverse recovery time
trr
VR =30V, IF =lS ,
-
51
64
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
22
28
nC
Rev. 2.3
Page 3
2006-12-01
BSS670S2L
1 Power dissipation
2 Drain current
Ptot = f (TA)
ID = f (TA)
parameter: VGS≥ 10 V
BSS670S2L
0.6
W
A
0.32
0.5
0.28
0.45
BSS670S2L
0.4
0.24
ID
P tot
0.38
0.35
0.2
0.3
0.16
0.25
0.12
0.2
0.15
0.08
0.1
0.04
0.05
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
160
TA
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJS = f (tp)
parameter : D = 0 , T A = 25 °C
parameter : D = tp/T
10 1
°C
BSS670S2L
10 3
BSS670S2L
K/W
A
/ID
=
100 µs
n)
(o
DS
1 ms
ID
R
10 2
ZthJS
10 0
V
tp = 23.0µs
DS
10 ms
10 -1
10 1
10 0
D = 0.50
0.20
10
-1
0.05
10 -2
single pulse
DC
10 -3 -1
10
10
0
10
1
V
0.02
10 -2
10
10 -3 -7
10
2
0.01
10
-6
10
-5
10
-4
10
-3
10
-2
s
tp
VDS
Rev. 2.3
0.10
Page 4
2006-12-01
10
0
BSS670S2L
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS); Tj=25°C
parameter: t p = 80 µs
RDS(on) = f (ID)
parameter: VGS
3
A
1500
4.5V
10V
6V
5V
mΩ
R DS(on)
1200
ID
2
4V
3.5V
4V
4.5V
5V
6V
10V
1100
1000
900
800
1.5
700
600
1
500
3.5V
400
300
0.5
200
3V
100
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
V 5
VDS
0.2
0.4
0.6
gfs = f(ID); Tj=25°C
parameter: t p = 80 µs
parameter: gfs
2.2
2.2
A
S
1.8
1.8
1.6
1.6
gfs
ID
8 Typ. forward transconductance
ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max
1.4
1.4
1.2
1.2
1
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
Rev. 2.3
0.5
1
1.5
2
2.5
3
3.5
4
1.2
A
ID
7 Typ. transfer characteristics
0
0
0.8
0
0
V 5
VGS
Page 5
0.4
0.8
1.2
1.6
2.2
A
ID
2006-12-01
BSS670S2L
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 270 mA, VGS = 10 V
parameter: VGS = VDS
1900
BSS670S2L
2.5
mΩ
V
V GS(th)
RDS(on)
1600
1400
1200
10 µA
1.5
2 µA
1000
800
98%
1
600
400
0.5
typ
200
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
100
180
°C
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0, f=1 MHz
parameter: Tj , tp = 80 µs
10 3
10 1
pF
BSS670S2L
A
10 2
10 0
C
IF
Ciss
Coss
Crss
10 1
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
5
10
15
20
10 -2
0
30
V
VDS
Rev. 2.3
0.4
0.8
1.2
1.6
2
2.4 V
VSD
Page 6
2006-12-01
3
BSS670S2L
13 Typ. gate charge
14 Drain-source breakdown voltage
VGS = f (Q Gate)
V(BR)DSS = f (Tj)
parameter: I D = 0.54 A pulsed
parameter: I D=10 mA
16
BSS670S2L
66
V
V(BR)DSS
V
VGS
12
10
0,2 VDS max
62
60
0,8 VDS max
8
58
6
56
4
54
2
52
0
0
0.4
0.8
1.2
1.6
2
nC
2.6
QGate
Rev. 2.3
BSS670S2L
Page 7
50
-60
-20
20
60
100
°C
180
Tj
2006-12-01
BSS670S2L
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.3
Page 8
2006-12-01