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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20041
Generic Copy
Issue Date: 28-Mar-2013
TITLE: Transfer Of High Voltage TMOS7 from ON Semiconductor fab located in Aizu, Japan to ON
Semiconductor Fab in Roznov, Czech Republic.
PROPOSED FIRST SHIP DATE: 28-Jun-2013
AFFECTED CHANGE CATEGORY(S): Wafer Fabrication
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or Mohd Hezri Abu Bakar
<[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office or Brian Goodburn
< [email protected] >
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected] >
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers.
implementation of the change.
FPCNs are issued at least 90 days prior to
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
DESCRIPTION AND PURPOSE:
ON Semiconductor consolidated their manufacturing efforts by closing their Wafer facility in Aizu,
Japan. This Aizu facility had been the source for High Cell Density (TMOS7 ) MOSFET Die. These
MOSFET Die types are transferred, and will be sourced from the ON Semiconductor’s Wafer facility
in Roznov, Czech Republic.
Reliability Qualification and full electrical characterization over temperature have been performed.
Issue Date: 28-Mar-2013
Rev. 06-Jan-2010
Page 1 of 2
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20041
RELIABILITY DATA SUMMARY:
Reliability Test Results:
#
Test
Test Conditions
1
AC-PC
HASTPC
Ta = 121°C/ 100% RH/ 15psig
130°C/85% RH Vds=80% or
max rated or 100V maximum
TA = Max rated for 1008 hrs
Vgs=100% of max rated
TA = Max rated for 1008 hrs
Vds=80% of max rated
Ta=25'C, delta Tj=100'C, 2-min
on/off, 15K- cy
-55°C to +150°C
2
3
HTGB
4
HTRB
5
6
IOLPC
TC-PC
Read
points
96 hr
MMBF
170L
0/80
NTMD660
1
0/80
96 hr
0/80
0/80
1008 hr
0/80
1008 hr
15000
cyc
1000 hr
NTD3055
NTD20P06L
NTB30N20
NTB30N15
0/80
0/80
0/80
--
0/80
0/80
0/80
--
0/80
0/160
0/80
0/160
--
0/80
0/80
0/160
0/80
0/80
0/240
0/80
0/80
0/80
0/80
0/80
--
0/80
0/80
0/80
0/80
0/80
--
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available upon
request.
CHANGED PART IDENTIFICATION:
There will be no physical change to the Devices assembled with ON Semiconductor Die from
Roznov, CR. There will be Wafer Lot traceability from the manufacturing Lot to determine the Die
origin. Product assembled with the Die fabricated from the Roznov wafer facility will have a Finish
Good Date Code no earlier than Work Week 25, 2013.
List of affected General Parts:
BSS123LT1G
BVSS123LT1G
NTB35N15T4G
SMBF1035LT3G
Issue Date: 28-Mar-2013
Rev. 06-Jan-2010
Page 2 of 2
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