FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20041 Generic Copy Issue Date: 28-Mar-2013 TITLE: Transfer Of High Voltage TMOS7 from ON Semiconductor fab located in Aizu, Japan to ON Semiconductor Fab in Roznov, Czech Republic. PROPOSED FIRST SHIP DATE: 28-Jun-2013 AFFECTED CHANGE CATEGORY(S): Wafer Fabrication FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or Mohd Hezri Abu Bakar <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or Brian Goodburn < [email protected] > ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected] > NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor consolidated their manufacturing efforts by closing their Wafer facility in Aizu, Japan. This Aizu facility had been the source for High Cell Density (TMOS7 ) MOSFET Die. These MOSFET Die types are transferred, and will be sourced from the ON Semiconductor’s Wafer facility in Roznov, Czech Republic. Reliability Qualification and full electrical characterization over temperature have been performed. Issue Date: 28-Mar-2013 Rev. 06-Jan-2010 Page 1 of 2 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20041 RELIABILITY DATA SUMMARY: Reliability Test Results: # Test Test Conditions 1 AC-PC HASTPC Ta = 121°C/ 100% RH/ 15psig 130°C/85% RH Vds=80% or max rated or 100V maximum TA = Max rated for 1008 hrs Vgs=100% of max rated TA = Max rated for 1008 hrs Vds=80% of max rated Ta=25'C, delta Tj=100'C, 2-min on/off, 15K- cy -55°C to +150°C 2 3 HTGB 4 HTRB 5 6 IOLPC TC-PC Read points 96 hr MMBF 170L 0/80 NTMD660 1 0/80 96 hr 0/80 0/80 1008 hr 0/80 1008 hr 15000 cyc 1000 hr NTD3055 NTD20P06L NTB30N20 NTB30N15 0/80 0/80 0/80 -- 0/80 0/80 0/80 -- 0/80 0/160 0/80 0/160 -- 0/80 0/80 0/160 0/80 0/80 0/240 0/80 0/80 0/80 0/80 0/80 -- 0/80 0/80 0/80 0/80 0/80 -- ELECTRICAL CHARACTERISTIC SUMMARY: There is no change in electrical parametric performance. Characterization data is available upon request. CHANGED PART IDENTIFICATION: There will be no physical change to the Devices assembled with ON Semiconductor Die from Roznov, CR. There will be Wafer Lot traceability from the manufacturing Lot to determine the Die origin. Product assembled with the Die fabricated from the Roznov wafer facility will have a Finish Good Date Code no earlier than Work Week 25, 2013. List of affected General Parts: BSS123LT1G BVSS123LT1G NTB35N15T4G SMBF1035LT3G Issue Date: 28-Mar-2013 Rev. 06-Jan-2010 Page 2 of 2