Product Overview CPH3455: Power MOSFET, 35V, 104mΩ , 3A, Single N-Channel For complete documentation, see the data sheet Product Description This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Benefits • Low On-Resistance : RDS(on)=104mΩ (max) [ID=1.5A, VGS=10V] • Pb-Free, Halogen Free and RoHS compliance • ESD Diode-Protected Gate • 4V drive • Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation • Environmental Consideration • ESD Resistance Applications End Products • Load Switch • Motor Drive • Server, Fridge, DSLR, Transceiver • Electronic Bidet Toilet Seat Part Electrical Specifications Product CPH3455-TL-W Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on NSin Cha gle nne l 35 VGS Ma x (V) VGS 20 2.6 (th) Ma x (V) ID Ma x (A) PD Ma x (W) 3 1 rDS( rDS( rDS( on) on) on) 173 104 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 4 0.7 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 186 36 22 CP H-3