BB 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage (car radio) • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve • High figure of merit Type Marking Ordering Code Pin Configuration BB 914 SMs 1 = A1 Q62702-B673 2 = A2 Package 3=C1/2 SOT-23 Maximum Ratings Parameter Symbol Values Diode reverse voltage VR 18 Peak reverse voltage VRM 20 Forward current, TA ≤ 60°C IF 50 Operating temperature range Top - 55 ... + 125 Storage temperature Tstg - 55 ... + 150 Unit V mA °C Thermal Resistance Junction - ambient RthJA Semiconductor Group 1 ≤ 600 K/W Oct-10-1996 BB 914 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics IR Reverse current nA VR = 16 V, TA = 25 °C - - 20 VR = 16 V, TA = 60 °C - - 200 AC characteristics CT Diode capacitance pF VR = 2 V, f = 1 MHz 42.5 43.75 45 VR = 8 V, f = 1 MHz 17.6 18.7 19.75 CT2/CT8 Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Capacitance matching 2) 2.28 2.42 % - - 1.5 Ω rs CT = 38 pF, f = 100 MHz Semiconductor Group 2.34 ∆CT/CT VR = 2 V, VR = 8 V, f = 1 MHz Series resistance - - 2 0.28 - Oct-10-1996 BB 914 Diode capacitance per diode Capacitance ratio CTref/CT = f(VR) CT = f(VR) f = 1MHz CT Vref = Parameter, f = 1MHz 100 5.0 pF - 80 CTref/CT4.0 70 3.5 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0 1V 2V 3V 0.0 0 1 2 3 4 5 6 7 8 V 10 VR 0 1 2 3 4 5 6 7 8 V VR 10 Package Semiconductor Group 3 Oct-10-1996