INFINEON CGY0819

CGY 0819
GaAs MMIC
l
l
l
l
l
l
Tri mode power amplifier for AMPS/ CDMA /TDMA
portable cellular phones
Dual band operation
31.5 dBm saturated output power @ PAE=55% typ.
29 dBm linear output [email protected] PAE=40% typ.
Two independent amplifier chains
Power ramp control
Input matched to 50 ohms, simple output match
on PCB
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
CGY 0819
CGY 0819
Q62702G0076
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
9
V
Supply current
ID
4
A
TCh
Tstg
150
°C
-55...+150
°C
PPulse
tbd
W
Ptot
tbd
W
Characteristics
Symbol
max. Value
Unit
Channel-soldering point
RthChS
11
K/W
Channel temperature
Storage temperature
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
Total power dissipation (Ts ≤ 80 °C)
Ts: Temperature at soldering point
Thermal Resistance
Siemens Aktiengesellschaft
Semiconductor Group
1
1
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Functional Block Diagram:
Pin Configuration:
Pin #
Name
1
VD Cell
2
RF IN Cell
RF IN Cell Band
3
Vneg
Negative voltage
4
Vcon cell
Control voltage cell. PA
5
Vcon PCS
Control voltage PCS PA
6
Vneg
Negative voltage
7
RF IN PCS
RF IN PCS Band
8
VD PCS
9
RF out PCS
RF out PCS
10
RF out PCS
RF out PCS
11
RF out PCS
RF out PCS
12
RF out PCS
RF out PCS
13
GND
RF Ground
14
RF out Cell
RF out Cell
15
RF out Cell
RF out Cell
16
RF out Cell
RF out Cell
Siemens Aktiengesellschaft
Semiconductor Group
Configuration
Drain voltage cell preamplifier stage
Drain voltage PCS preamplifier stage
2
2
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Electrical Characteristics
(TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified )
Characteristics
Frequency range
Cellular frequency band
PCS frequency band
Duty cycle
Symbol
min
typ
max
f
Unit
MHz
824
1850
849
1910
tON/tOFF
100
%
AMPS output power
P
31,5
dBm
TDMA cellular output power
P
30
dBm
AMPS gain at max. output
G
24
dB
TDMA cellular gain at max. output
G
27
dB
TDMA PCS output power
P
29
dBm
TDMA PCS gain at max. output
G
24
dB
CDMA cellular output power
P
28
dBm
CDMA cellular gain at max. output
G
28
dB
CDMA PCS output power
P
29
dBm
CDMA PCS gain at max. output
G
24
dB
Power ramping characteristic
Full output power
Pinch off
Vcontr
2.5
0.5
Adjacent Channel Power CDMA
900kHz offset (cellular band)
1.25 MHz offset (PCS band)
1.98 MHz offset
Padj/Pmain
Adjacent channel power TDMA
adjacent
alternate
2nd alternate
Padj/Pmain
-45
–45
-54
AMPS efficiency
PAE
TDMA DC to RF efficiency
@Padj=-26dBc
at max. output
Cellular Band:
PCS Band
PAE
CDMA DC to RF efficiency
@Padj=-42dBc
at max. output
Cellular Band
PCS Band
PAE
-28
–45
-45
55
dBc @
30kHz
dBc @
30kHz
%
%
40
40
%
35
40
at Pout=10 dBm ( Iq set to 100mA )
Siemens Aktiengesellschaft
Semiconductor Group
V
8
3
3
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Characteristics
Symbol
min
typ
max
Unit
Receive band noise power density
Cell band ( 869 to 894 MHz )
PCS band ( 1930 to 1990 MHz )
PRX
DC supply voltage range
VD
3
Negative supply voltage range
Vneg
-5.0
Standby current @Vcon=0V
Ipwr dwn
500
µA
IQ
300
mA
Current consumption at VContr
IControl
2
mA
Current consumption at VNEG
INEG
2
mA
Operating temperature range
υ
Quiescent current
dBm/Hz
-137
-145
-30
3.5
4.0
V
-7
V
+85
°C
Power on sequence:
1. connect negative voltage to PA
2. connect control voltage to PA
3. turn on Vd
4. turn on Pin
To switch off the device please use reverse sequence.
Siemens Aktiengesellschaft
Semiconductor Group
4
4
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
1u0
C14
1u0
C12
1k0
R3
R4
C11
V3
C13
Vd
100p
10p HQ
C5
5p6 HQ
C4
1u0
CGY0819
C17
3p9 HQ
17
BCP 72
C18
RFout PCS
L2
GND (backside MW16)
100p
RFout Cel
100p
100p
100p
C10
10n
10n
C9
C8
100p
C6
16
15
14
13
12
11
10
9
C16
C7
RFin PCS
RFout3Cell
RFout2Cell
RFout1Cell
GND
RFout4PCS
RFout3PCS
RFout2PCS
RFout1PCS
33 nH
8n2
VD1Cell
RFinCell
VnegCell
VconCell
VconPCS
VnegPCS
RFinPCS
VD1PCS
1u0
Vcon Cell
Vcon PCS
1
2
3
4
5
6
7
8
100p
C15
3p9
C1
L4
RFin Cell
L3
IC1
C2
33 nH
C3
Application Circuit:
10n
C19
Vsw
68R
10n
C20
10uH
L1
3k9
R2
33n
C21
Vaux
33n
1
C23
3
V1
C22
1n0
CLK
BC848B
V2
680R
R1
1n0
BAS 40-04
2
Evaluation Board Parts List
Part Type
Position
Description
Manufacturer
Capacitor
C1
3.9pF 0403
Siemens
Capacitor
C2, C3, C6, C7,
C10, C16, C18
100pF 0402
Siemens
Capacitor
C4
5.6pF 0603 HQ
AVX
06035J5R6GBT
Capacitor
C5
10pF 0603 HQ
AVX
06035J100GBT
Capacitor
C8, C9, C11,
C19
10nF0402
Siemens
Capacitor
C12, C13, C14,
C15
1u0 1206
Capacitor
C17
3.9pF 0603 HQ
AVX
Capacitor
C20, C21
33nF 0402
Siemens
Capacitor
C22, C23
1nF 0402
Siemens
Siemens Aktiengesellschaft
Semiconductor Group
5
5
Part Number
06035J3R9BBT
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Part Type
Position
Description
Manufacturer
Inductor
L1
10uH
Siemens
Inductor
L2, L3
Air Coil 33nH
H. David GmbH
Inductor
L4
8.2nH 0603
TOKO
Resistor
R1
680 Ohm 0402
Resistor
R2
3.9k 0402
Resistor
R3
68 Ohm 0805
Resistor
R4
1.0k 0402
Transistor
V1
BC848B
Siemens
Diode
V2
BAS40-04W
Siemens
Transistor
V3
BCP72
Siemens
IC
IC1
CGY0819
Siemens
FR4,
h=0.2mm,εr=4.5
Siemens
Substrate
Part Number
PN/BV 1250
Evaluation Board:
Vcon Cell
L4
C4
C2
C9
C6
RFout Cell
C1
C19
Cellular
L3
C3
RFin Cell
Vcon
Siemens
Dual Band PA
C5
IC1
C18
C17
C11
C7
C8
RFout PCS
RFin PCS
L2
C16
Vd
Vsw
C21
R1
C22
R2
Vaux
Vcon PCS
L1
C20
Vsw
Vd
Vcon
V2
C23
R3
R4
CGY0819
V3
C14
C15
V1
C12
C13
C10
PCS
CLK
Vaux
CLK
Siemens Aktiengesellschaft
Semiconductor Group
6
6
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Typical Performance in Cellular AMPS Operation Mode
70.00
60
900
30
60.00
50
750
25
50.00
40
600
20
40.00
30
450
15
30.00
TG [dB]
PAE [%]
Pout [dBm]
35
5
300
20
Pout [dBm] 20.00
PAE [%]
10.00
10
Id [mA]
AMPS Mode: TG & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
AMPS Mode: PAE & Pout vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
TG [dB]
10
150
Id [mA]
0.00
0
-15 -13 -11
-9
-7
-5
-3
-1
1
3
5
0
0
7
-15 -13 -11
-9
-7
-5
Pin [dBm]
-3
-1
1
3
5
7
Pin [dBm]
AMPS Mode: Pout vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C
AMPS Mode: PAE vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C
34
58
56
PAE [%]
Pout [dBm]
33
32
54
31
30
52
3
3.2
3.4
3.6
3.8
4
3
3.2
3.4
Vd [V]
4
58
57
56
PAE [%]
Pout [dBm]
3.8
AMPS Mode: PAE vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C
AMPS Mode: Pout vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C
33
32.8
32.6
32.4
32.2
32
31.8
31.6
31.4
31.2
31
820
3.6
Vd [V]
55
54
53
825
830
835
840
845
52
820
850
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
825
830
835
840
845
850
f [MHz]
7
7
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Typical Performance in Cellular CDMA Operation Mode:
800
70
30
35
700
60
29
30
600
50
28
25
500
20
400
Pout [dBm]
15
300
PAE [%]
10
200
Id [mA]
5
-11
-9
-7
-5
-3
-1
1
ACP885 [dBc]
26
20
ACP1,98 [dBc]
25
24
23
0
14
3
16
18
20
22
28
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
825
830
835
840
845
850
60
59
58
57
56
55
54
53
52
51
50
820
825
830
830
835
840
845
850
845
850
40
39
38
37
36
35
34
33
32
31
30
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
840
CDMA Mode: PAE vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
PAE [%]
825
835
30
f [MHz]
CDMA Mode: Gain vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
TG [dB]
26
Pout [dBm]
f [MHz]
30
29
28
27
26
25
24
23
22
21
20
820
24
Pin [dBm]
ACPR [dBc]
50
49
48
47
46
45
44
43
42
41
40
820
-13
30
10
0
-15
27
40
TG [dB]
100
0
ACPR [dBc]
ACPR [dBc]
40
TG [dB]
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
Id [mA]
Pout [dBm], PAE [%]
CDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
8
8
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
C DMA Mode: AC PR @1,98MHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
50
49
48
47
46
45
44
43
42
41
40
820
ACPR [dBc]
ACPR [dBc]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
825
830
835
840
845
850
60
59
58
57
56
55
54
53
52
51
50
820
825
830
f [MHz]
TG [dB]
PAE [%]
825
830
835
840
845
850
40
39
38
37
36
35
34
33
32
31
30
820
825
830
830
835
840
845
850
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
850
835
840
845
850
845
850
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
ACPR [dBc]
ACPR [dBc]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
825
845
f [MHz]
f [MHz]
50
49
48
47
46
45
44
43
42
41
40
820
840
CDMA Mode: PAE vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
820
835
f [MHz]
60
59
58
57
56
55
54
53
52
51
50
820
825
830
835
840
f [MHz]
9
9
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
CDMA Mode: PAE vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
820
PAE [%]
TG [dB]
CDMA Mode: Gain vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
825
830
835
840
845
850
40
39
38
37
36
35
34
33
32
31
30
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Typical Performance in Cellular TDMA Operation Mode
900
80
30
40
800
70
29
35
700
60
28
30
600
25
500
50
27
20
400
40
26
15
300
10
PAE [%]
200
20
5
Id [mA]
100
10
0
35
34
33
32
31
30
29
28
27
26
25
820
-13
-11
-9
-7
-5
-3
-1
1
3
Padj [dBc]
24
Palt [dBc]
23
TG [dB]
22
0
5
14
16
18
20
22
24
26
28
Pin [dBm]
Pout [dBm]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
ACPR [dBc]
-15
25
30
Pout [dBm]
0
ACPR [dBc]
ACPR [dBc]
45
825
830
835
840
845
850
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
TG [dB]
TDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
Id [mA]
Pout [dBm], PAE [%]
TDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C
55
54
53
52
51
50
49
48
47
46
45
820
825
830
835
840
30
845
850
f [MHz]
10
10
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
30
29
28
27
26
25
24
23
22
21
20
820
TDMA Mode: PAE vs. f
Vd=3V, Pout=29dBm, Iq=300mA
PAE [%]
TG [dB]
TDMA Mode: Gain vs. f
Vd=3V, Pout=29dBm, Iq=300mA
825
830
835
840
845
850
45
44
43
42
41
40
39
38
37
36
35
820
825
830
825
830
835
840
845
850
55
54
53
52
51
50
49
48
47
46
45
820
825
830
f [MHz]
830
835
840
845
850
TG [dB]
835
840
845
850
45
44
43
42
41
40
39
38
37
36
35
820
825
830
835
840
845
850
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
850
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
PAE [%]
825
845
f [MHz]
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
820
840
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
ACPR [dBc]
ACPR [dBc]
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
35
34
33
32
31
30
29
28
27
26
25
820
835
f [MHz]
f [MHz]
11
11
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
35
34
33
32
31
30
29
28
27
26
25
820
TDMA Mode: Palt vs. f
Vd=4V, Pout=31dBm, Iq=300mA
ACPR [dBc]
ACPR [dBc]
TDMA Mode: Padj vs. f
Vd=4V, Pout=31dBm, Iq=300mA
825
830
835
840
845
850
55
54
53
52
51
50
49
48
47
46
45
820
825
830
835
f [MHz]
825
830
845
850
845
850
TDMA Mode: PAE vs. f
Vd=4V, Pout=31dBm, Iq=300mA
PAE [%]
TG [dB]
TDMA Mode: Gain vs. f
Vd=4V, Pout=31dBm, Iq=300mA
30
29
28
27
26
25
24
23
22
21
20
820
840
f [MHz]
835
840
845
850
45
44
43
42
41
40
39
38
37
36
35
820
825
830
835
f [MHz]
840
f [MHz]
Typical Performance in PCS CDMA Operation Mode:
800
80
26
35
700
70
25
30
600
60
24
25
500
50
23
20
400
40
22
15
300
ACPR [dBc]
40
30
ACP1,25 [dBc]
21
10
PAE [%]
200
20
ACP1,98 [dBc]
20
5
Id [mA]
100
10
0
-10
Pout [dBm]
0
-8
-6
-4
-2
0
2
4
6
19
18
0
8
14
Pin [dBm]
Siemens Aktiengesellschaft
Semiconductor Group
TG [dB]
TG [dB]
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C
Id [mA]
Pout [dBm], PAE [%]
CDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C
16
18
20
22
24
26
28
30
Pout [dBm]
12
12
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,0V, Pout=28dBm, Iq=250m A
50
60
49
59
48
58
47
57
ACPR [dBc]
ACPR [dBc]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=3,0V, Pout=28dBm , Iq=250mA
46
45
44
56
55
54
43
53
42
52
41
51
40
1850
1860
1870
1880
1890
1900
50
1850
1910
1860
1870
f [MHz]
1880
1890
1900
1910
f [MHz]
CDMA Mode: Gain vs. f
Vd=3,0V, Pout=28dBm, Iq=250m A
CDMA Mode: PAE vs. f
Vd=3,0V, Pout=28dBm , Iq=250mA
25
42
24
40
23
38
21
PAE [%]
TG [dB]
22
20
19
36
34
18
17
32
16
15
1850
1860
1870
1880
1890
1900
30
1850
1910
1860
1870
f [MHz]
50
60
49
59
48
58
47
57
46
45
44
54
53
52
41
51
1880
1890
1900
50
1850
1910
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
1910
55
42
1870
1900
56
43
1860
1890
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
ACPR [dBc]
ACPR [dBc]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
40
1850
1880
f [MHz]
1860
1870
1880
1890
1900
1910
f [MHz]
13
13
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
CDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
25
40
24
39
23
38
22
37
21
36
PAE [%]
TG [dB]
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
20
19
35
34
18
33
17
32
16
31
15
1850
1860
1870
1880
1890
1900
30
1850
1910
1860
1870
50
60
49
59
48
58
47
57
46
45
44
54
53
52
41
51
1880
1890
1900
50
1850
1910
1860
1870
f [MHz]
39
23
38
22
37
21
36
PAE [%]
TG [dB]
40
24
20
19
33
32
16
31
1890
1900
30
1850
1910
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
1910
34
17
1880
1900
35
18
1870
1890
CDMA Mode: PAE vs. f
Vd=4V, Pout=30dBm , Iq=250m A
25
1860
1880
f [MHz]
CDMA Mode: Gain vs. f
Vd=4V, Pout=30dBm , Iq=250m A
15
1850
1910
55
42
1870
1900
56
43
1860
1890
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=30dBm , Iq=250m A
ACPR [dBc]
ACPR [dBc]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=4V, Pout=30dBm , Iq=250m A
40
1850
1880
f [MHz]
f [MHz]
14
14
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Typical Performance in PCS TDMA Operation Mode:
800
35
700
30
600
25
500
20
400
15
10
200
PAE [%]
5
0
-10
300
Pout [dBm]
100
Id [mA]
-6
-4
-2
0
2
4
6
25
60
24
50
23
40
22
30
21
20
Padj [dBc]
20
10
Palt [dBc]
19
TG [dB]
0
-8
70
18
0
8
14
16
18
Pin [dBm]
54
33
53
32
52
ACPR [dBc]
ACPR [dBc]
55
34
31
30
29
47
26
46
1890
1900
45
1850
1910
1860
1870
f [MHz]
44
23
43
22
42
21
41
PAE [%]
TG [dB]
45
24
20
19
1900
1910
1900
1910
39
38
17
37
16
36
1890
1900
35
1850
1910
1860
1870
1880
1890
f [MHz]
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
1890
40
18
1880
1880
TDMA Mode: PAE vs. f
Vd=3V, Pout=28dBm , Iq=250m A
25
1870
30
f [MHz]
TDMA Mode: Gain vs. f
Vd=3V, Pout=28dBm , Iq=250m A
1860
28
49
48
15
1850
26
50
27
1880
24
51
28
1870
22
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
35
1860
20
Pout [dBm]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
25
1850
TG [dB]
40
ACPR [dBc]
TDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25°C
Id [mA]
Pout [dBm], PAE [%]
TDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=250mA, f=1880 MHz, T=25°C
15
15
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
35
55
34
54
33
53
32
52
ACPR [dBc]
ACPR [dBc]
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
31
30
29
51
50
49
28
48
27
47
26
46
25
1850
1860
1870
1880
1890
1900
45
1850
1910
1860
1870
f [MHz]
45
24
44
23
43
22
42
21
41
PAE [%]
TG [dB]
25
20
19
38
37
16
36
1880
1890
1900
35
1850
1910
1860
1870
35
55
34
54
33
53
32
52
31
30
29
1900
1910
49
48
47
26
46
1890
1900
45
1850
1910
f [MHz]
Siemens Aktiengesellschaft
Semiconductor Group
1910
50
27
1880
1900
51
28
1870
1890
TDMA Mode: Palt vs. f
Vd=4V, Pout=30dBm , Iq=250m A
ACPR [dBc]
ACPR [dBc]
TDMA Mode: Padj vs. f
Vd=4V, Pout=30dBm , Iq=250m A
1860
1880
f [MHz]
f [MHz]
25
1850
1910
39
17
1870
1900
40
18
1860
1890
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
15
1850
1880
f [MHz]
1860
1870
1880
1890
f [MHz]
16
16
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
TDMA Mode: PAE vs. f
Vd=4V, Pout=30dBm , Iq=250m A
25
43
24
42
23
41
22
40
21
39
PAE [%]
TG [dB]
TDMA Mode: Gain vs. f
Vd=4V, Pout=30dBm , Iq=250m A
20
19
38
37
18
36
17
35
16
34
15
1850
1860
1870
1880
1890
1900
33
1850
1910
Siemens Aktiengesellschaft
Semiconductor Group
1860
1870
1880
1890
1900
1910
f [MHz]
f [MHz]
17
17
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo
CGY 0819
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information,
Balanstraße 73, D-81541 München
copyright Siemens AG 1996. All Rights Reserved
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer
Siemens Aktiengesellschaft
Semiconductor Group
18
18
16.09.98
1998-11-01
HL HF PE GaAs
1 / Fo