SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery IF 6 A PG-TO220-2-2. • No temperature influence on P-TO220 the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery Type SDP06S60 Package P-TO220-3 Ordering Code Q67040-S4371 Marking Pin 1 Pin 2 Pin 3 D06S60 n.c. C A SDT06S60 PG-TO220-2-2. Q67040-S4446 D06S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 6 Unit A 8.4 21.5 TC=25°C, tp=10ms IFRM 28 IFMAX 60 i 2t value, TC=25°C, tp=10ms ³i2dt 2.3 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 57.6 W Operating and storage temperature Tj , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C Rev. 2.4 Page 1 2008-06-02 SDP06S60 SDT06S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=6A, Tj=25°C - 1.5 1.7 IF=6A, Tj=150°C - 1.7 2.1 Reverse current µA IR V R=600V, T j=25°C - 20 200 V R=600V, T j=150°C - 50 1000 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 2008-06-02 SDP06S60 SDT06S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 21 - nC trr - n.a. - ns AC Characteristics Total capacitive charge V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Switching time V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Total capacitance C pF V R=0V, T C=25°C, f=1MHz - 300 - V R=300V, T C=25°C, f=1MHz - 20 - V R=600V, T C=25°C, f=1MHz - 15 - Rev. 2.4 Page 3 2008-06-02 SDP06S60 SDT06S60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f (TC) parameter: Tj≤175 °C 6.5 60 A W 5.5 50 5 4.5 40 IF Ptot 45 35 4 3.5 30 3 25 2.5 20 2 15 1.5 10 1 5 0.5 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 12 28 W A 9 24 22 PF(AV) 10 150°C 125°C 100°C 25°C -40°C IF 8 7 20 18 16 6 14 5 12 10 4 8 3 6 2 4 1 0 0 2 0.5 1 1.5 V 2.5 0 0 2 4 6 8 A 12 IF(AV) VF Rev. 2.4 d=0.1 d=0.2 d=0.5 d=1 Page 4 2008-06-02 SDP06S60 SDT06S60 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 2 10 10 1 µA K/W 10 0 150°C 125°C 100°C 25°C ZthJC 10 1 IR SDP06S60 10 0 10 -1 D = 0.50 10 -1 10 -2 0.20 0.10 0.05 10 -2 10 -3 0.02 single pulse 0.01 10 -3 100 150 200 250 300 350 400 450 500 10 -4 -7 10 V 600 VR 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 250 3.5 µJ pF EC C 2.5 150 2 1.5 100 1 50 0.5 0 0 10 Rev. 2.4 10 1 10 2 3 10 V VR Page 5 0 0 100 200 300 400 V 600 VR 2008-06-02 SDP06S60 SDT06S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 22 nC IF*2 IF 18 Qc 16 IF*0.5 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 2.4 Page 6 2008-06-02 SDP06S60 SDT06S60 P-TO220-3-1, P-TO220-3-21 Rev. 2.4 Page 7 2008-06-02 SDP06S60 SDT06S60 PG-TO-220-2-2 Rev. 2.4 Page 8 2008-06-02 SDP06S60 SDT06S60 Rev. 2.4 Page 9 2008-06-02